JPH0436280Y2 - - Google Patents

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Publication number
JPH0436280Y2
JPH0436280Y2 JP1986196442U JP19644286U JPH0436280Y2 JP H0436280 Y2 JPH0436280 Y2 JP H0436280Y2 JP 1986196442 U JP1986196442 U JP 1986196442U JP 19644286 U JP19644286 U JP 19644286U JP H0436280 Y2 JPH0436280 Y2 JP H0436280Y2
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
ohmic contact
parts
brightness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1986196442U
Other languages
Japanese (ja)
Other versions
JPS63100240U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986196442U priority Critical patent/JPH0436280Y2/ja
Publication of JPS63100240U publication Critical patent/JPS63100240U/ja
Application granted granted Critical
Publication of JPH0436280Y2 publication Critical patent/JPH0436280Y2/ja
Expired legal-status Critical Current

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  • Dot-Matrix Printers And Others (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Exposure Or Original Feeding In Electrophotography (AREA)

Description

【考案の詳細な説明】 イ 産業上の利用分野 本考案は主走査長光プリンタヘツドに好適な光
プリンタ用発光ダイオードに関する。
[Detailed Description of the Invention] A. Field of Industrial Application The present invention relates to a light emitting diode for an optical printer suitable for a main scanning long optical printer head.

ロ 従来の技術 近年モノリシツク発光ダイオード(アレイ)を
用いた光プリンタが開発されているが、それに用
いる光プリンタヘツドは例えば特開昭61−202859
号公報に示される様に、複数の発光ダイオードを
1列に整列させ全体を光プリンタの主走査の長さ
にあわせた。いわゆる1ライン型ヘツドとなつて
いる。このような1ライン型ヘツドにおいて最も
重要な事の1つに、発光ダイオードの継目におい
ても印写品質を劣悪化させてはならないというこ
とがある。つまり、1つの発光ダイオードにおい
て発光部は選択拡散等によつて等間隔、所定輝度
になるように形成されるが、それらを連接させる
と特に継目をはさんだ隣接発光部で特性差が現わ
れないようにする必要がある。ところが、この継
目部分に位置する発光部、言いかえると発光ダイ
オード素子端部に位置する発光部は、ウエハ切断
時に発光部の近傍を切るので歪(ストレス)を受
け、その歪により特性劣化を生じたり、結晶端縁
がPN接合に近いため電流や光の端縁側への洩れ
などを生じたりすることにより、輝度低下が生じ
やすい。このような発光ダイオードを用いた光プ
リンタにおいては、その継目部分において副走査
方向に白線があるかの様に印写されるので印写品
質は著しく悪い。また輝度低下が少ない場合でも
継目部分で発光部間隔が所定間隔より少しでも広
いと、異なる発光ダイオードにおける特性差が強
調されるような印写となり、印写品質は悪くな
る。
B. Prior Art In recent years, optical printers using monolithic light emitting diodes (arrays) have been developed.
As shown in the publication, a plurality of light emitting diodes are arranged in a line to match the length of the main scan of an optical printer. It is a so-called one-line head. One of the most important things in such a one-line type head is that the printing quality must not deteriorate even at the joints of the light emitting diodes. In other words, in a single light emitting diode, the light emitting parts are formed at regular intervals and with a predetermined brightness by selective diffusion, etc., but when they are connected, it is especially important to avoid differences in characteristics between adjacent light emitting parts across the seam. It is necessary to However, the light emitting part located at this joint part, in other words, the light emitting part located at the end of the light emitting diode element, is subjected to strain (stress) because the vicinity of the light emitting part is cut when the wafer is cut, and this distortion causes characteristic deterioration. Also, because the crystal edge is close to the PN junction, current and light leak to the edge side, which tends to cause a decrease in brightness. In an optical printer using such a light emitting diode, the printing quality is extremely poor because the seam portion is printed as if there were a white line in the sub-scanning direction. Furthermore, even if the brightness decrease is small, if the interval between the light emitting parts at the seam is even slightly wider than the predetermined interval, the printing will emphasize the differences in characteristics between different light emitting diodes, and the printing quality will deteriorate.

ハ 考案が解決しようとする問題点 本考案は上述の点を改めるためになされたもの
で、端における発光部を高輝度化させた光プリン
タ用発光ダイオードを提供するものである。
C. Problems to be Solved by the Invention The present invention has been made to correct the above-mentioned problems, and provides a light emitting diode for an optical printer in which the light emitting portion at the end has a high brightness.

ニ 問題点を解決するための手段 本考案は発光部のオーミツク接触部分の面積を
発光ダイオード(素子)の略中央部における発光
部のものに対し、端に位置する発光部のものを小
さくするもので、より好ましくは端に位置する発
光部のオーミツク接触部分を発光ダイオードの端
寄りに設けたものである。
D. Means for solving the problem The present invention makes the area of the ohmic contact part of the light emitting part smaller in the area of the light emitting part located at the edge of the light emitting diode (element) than that of the light emitting part in the approximate center of the light emitting diode (device). More preferably, the ohmic contact portion of the light emitting portion located at the end is provided closer to the end of the light emitting diode.

ホ 作用 これにより、発光部において略中央部のものよ
り端の方のものが電流密度が高くなり高輝度化
し、その電流はオーミツク接触部分から発光部に
供給されるので位置が偏る事により端の方が高輝
度になる。
As a result, the current density is higher in the light emitting part at the ends than in the center, resulting in high brightness.The current is supplied from the ohmic contact part to the light emitting part, so the position is biased, and the ends of the light emitting part are biased. The brightness will be higher.

ヘ 実施例 第1図は本考案実施例の光プリンタ用発光ダイ
オードの平面図aと要部断面図bと要部輝度特性
図cである。図において1はGaAsP/GaAs等の
化合物半導体からなる基板で、表面には選択拡散
法により発光部2,2……3,3′が設けてある。
この発光部2,2……3,3′は光取出部(拡散
領域露出部)が1直線状にかつ等間隔になるよう
に配置され、その整列方向に対する端縁11,1
1と端に位置する発光部3,3′の距離は、発光
部2,2……の整列間隔の半分又は半分より短い
長さとなつて、発光ダイオードを連接配置した時
に継目でも発光部が等間隔となる様にしてある。
4,4……は発光部2,2……3,3′の各々と
オーミツク接触部21,21……31,31′で
オーミツク接触され、基板1の表面に絶縁層5を
介して設けられた個別電極で、アルミニウムの蒸
着膜などからなる。
Embodiment FIG. 1 is a plan view a, a sectional view b of a main part, and a luminance characteristic diagram c of a main part of a light emitting diode for an optical printer according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a substrate made of a compound semiconductor such as GaAsP/GaAs, on the surface of which light emitting sections 2, 2, . . . 3, 3' are provided by a selective diffusion method.
The light emitting parts 2, 2...3, 3' are arranged so that the light extraction parts (diffusion area exposed parts) are arranged in a straight line and at equal intervals, and the edges 11, 1 in the alignment direction
The distance between the light-emitting parts 3 and 3' located at the ends of the light-emitting parts 1 and 2 is set to be half or shorter than the alignment interval of the light-emitting parts 2, 2, etc., so that when the light-emitting diodes are arranged in series, the light-emitting parts are equal even at the joints. It is arranged so that the interval is the same.
4, 4... are in ohmic contact with each of the light emitting parts 2, 2, . These are individual electrodes made of vapor-deposited aluminum film.

ここにおいて、例えば発光部2,2……の光取
出部の大きさが50μm×50μmであるとすると、そ
のオーミツク接触部21,21……の大きさは
47μm×45μm(2115μm2)である。それに対し、端
に位置する発光部3,3′の光取出部の大きさは
50μm×50μmでかわらないが、オーミツク接触部
31,31はいずれも約1000μm2となつている。
電流は発光部2,2……3,3′の深さと不純物
濃度分布によりその分布を略均一化できるが、電
流の大きさが駆動用集積回路(ドライバ)により
略一定にされていれば、電流密度は発光部と基板
非拡散部との境界にあるPN接合Aの面積に依存
する。従つて略中央部にある発光部2,2……で
は、約4615μm2のPN接合に例えば3mA流れ、端
に位置する発光部3,3においては約3500μm2の
PN接合に同じ電流が流れる。輝度は電流密度に
略比例するから約32%高くなる計算になるが、実
際には電極下の光は取り出せないので、20〜25%
高輝度になる。
Here, for example, if the size of the light extraction part of the light emitting parts 2, 2... is 50 μm x 50 μm, the size of the ohmic contact parts 21, 21... is
It is 47μm×45μm (2115μm 2 ). On the other hand, the size of the light extraction part of the light emitting part 3, 3' located at the end is
Although the dimensions are the same as 50 μm×50 μm, the ohmic contact portions 31 and 31 are both approximately 1000 μm 2 .
The distribution of the current can be made approximately uniform depending on the depth of the light emitting parts 2, 2...3, 3' and the impurity concentration distribution, but if the magnitude of the current is made approximately constant by the driving integrated circuit (driver), The current density depends on the area of the PN junction A at the boundary between the light emitting part and the non-diffused part of the substrate. Therefore, in the light emitting parts 2, 2, located approximately in the center, for example, 3 mA flows through a PN junction of about 4615 μm 2 , and in the light emitting parts 3, 3 located at the ends, a current of about 3500 μm 2 flows.
The same current flows through the PN junction. Since the brightness is approximately proportional to the current density, it is calculated to be about 32% higher, but in reality, the light under the electrode cannot be extracted, so it is 20 to 25% higher.
The brightness becomes high.

さらに、第1図aに示すように、端に位置する
発光部3,3′のオーミツク接触部31,31′を
三角形とか階段状もしくは短冊状とし、発光部
3,3′の中心より端縁11,11側のオーミツ
ク接触面積が大きくなるようにすると、輝度特性
は第1図bの曲線32の如くに、他の発光部2,
2……の特性を示す曲線22,22……より高輝
度で、かつ端の方になる程より高輝度にすること
ができる。これにより、この発光ダイオードを用
いた光プリンタヘツドにおいて発光ダイオードの
継目が多少広くても、その部分は高濃度印写され
るから目立たない。
Furthermore, as shown in FIG. 1a, the ohmic contact parts 31, 31' of the light emitting parts 3, 3' located at the ends are shaped like triangles, steps, or strips, so that the ends of the light emitting parts 3, 3' are If the ohmic contact area on the 11, 11 side is made larger, the brightness characteristics will change as shown by the curve 32 in FIG.
The curves 22, 22... showing the characteristics of 2... have higher brightness, and the brightness can be made higher toward the ends. As a result, even if the seam of the light emitting diodes in an optical printer head using this light emitting diode is somewhat wide, that part will be printed with high density and will not be noticeable.

第2図は本考案の他の例に係るもので、特に発
光部20,20……30の略中央部に、個別電極
40,40……から延長された帯状電極41,4
1……が配置された場合を例にとつている。この
時もオーミツク接触面積を端部12に位置する発
光部30の分だけ、他の発光部20,20……の
ものより小さくしてある。さらに、帯状電極4
1,41……は発光部20,20……30の全体
に均一に電流を流す役をするものの、第2図bの
曲線23,23……に示すように帯状電極41,
41……は陰をつくる。従つて端の発光部30に
おいては、この帯状電極41を中央より端に位置
させるだけではなく細くすると、曲線33の如く
端側の輝度が高くなるばかりでなく陰の部分も狭
くなるからより好ましい。
FIG. 2 shows another example of the present invention, in particular, strip-shaped electrodes 41, 4 extending from individual electrodes 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 40, 4, 5, 5, 4, 5, 4, 5, 4, 5, 4, 5, 4, 5, 3, 3, 3, 3, 3, 4
1... is placed as an example. At this time as well, the ohmic contact area is made smaller than that of the other light emitting parts 20, 20, . . . by the amount of the light emitting part 30 located at the end portion 12. Furthermore, the strip electrode 4
1, 41... serve to uniformly flow current throughout the light emitting parts 20, 20... 30, but as shown in the curves 23, 23... in FIG. 2b, the strip electrodes 41,
41... creates a shadow. Therefore, in the light emitting section 30 at the end, it is preferable to not only position the strip electrode 41 at the end rather than the center but also to make it thinner, because not only the brightness at the end side becomes higher as shown by the curve 33, but also the shaded area becomes narrower. .

尚上述の例において、いずれも端に位置する発
光部において電流密度が上がるが、それが高くな
りすぎない限り、放熱をよくする事で急速劣化等
は生じない。実用的な略中央発光部と端発光部と
の面積比は1:0.9〜1:0.7が効果的である。ま
た上述の例では最も端に位置する1発光部につい
てのみオーミツク接触面積を小さくしたが、発光
ダイオードが長い場合や発光部が高密度の時には
最も端側から1乃至数個の発光部に適用してもよ
い。
In the above examples, the current density increases in the light emitting parts located at the ends, but as long as the current density does not become too high, rapid deterioration will not occur due to good heat dissipation. Practical effective area ratio between the substantially central light emitting section and the end light emitting section is 1:0.9 to 1:0.7. In addition, in the above example, the ohmic contact area was reduced only for one light emitting part located at the end, but if the light emitting diode is long or the light emitting parts are dense, it may be applied to one to several light emitting parts from the end. You can.

ト 考案の効果 以上の如くにより。発光ダイオードの端(継目
近傍)における発光部の輝度を高くし、あるいは
その発光部の輝度特性を端側がより高輝度になる
ようにしているので、劣化等を生じて本来の輝度
より低い輝度となつても白線印写程には至らず、
また継目が多少広がつても目立たない程度に光プ
リンタの感光体を感光させることができ、継目部
分による印写品質の劣悪化を防ぐことができる。
G. Effect of the invention As described above. The brightness of the light emitting part at the edge of the light emitting diode (near the seam) is increased, or the brightness characteristics of the light emitting part are set so that the end side has higher brightness, so there is a possibility that the brightness will be lower than the original due to deterioration. Even as I get older, I still haven't reached the level of white line printing,
Further, even if the seam widens to some extent, the photoreceptor of the optical printer can be exposed to light to an unnoticeable extent, and deterioration of printing quality due to the seam can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案実施例の光プリンタ用発光ダイ
オードの平面図aと要部断面図bと要部輝度特性
図c、第2図は他の実施例の光プリンタ用発光ダ
イオードの要部平面図aとその輝度特性図bであ
る。 1……基板、2,2……3,3′,20,20
……30……発光部、4,4……40,40……
個別電極。
Fig. 1 is a plan view a, a sectional view b of a main part, and a diagram c of a main part luminance characteristic diagram of a light emitting diode for an optical printer according to an embodiment of the present invention, and Fig. 2 is a plan view of a main part of a light emitting diode for an optical printer according to another embodiment. Figure a and its luminance characteristic diagram b. 1...Substrate, 2, 2...3, 3', 20, 20
...30... Light emitting part, 4,4...40,40...
Individual electrodes.

Claims (1)

【実用新案登録請求の範囲】 (1) 表面に整列して設けられた複数の発光部と、
発光部の各々にオーミツク接触された個別電極
とを具備した光プリンタ用発光ダイオードにお
いて、発光ダイオードの端に位置する発光部の
オーミツク接触面積は発光ダイオードの略中央
に位置する発光部のオーミツク接触面積より小
さい事を特徴とする光プリンタ用発光ダイオー
ド。 (2) 発光ダイオードの端に位置する前記発光部は
該発光部の中心より発光ダイオードの端側で前
記個別電極とオーミツク接触している事を特徴
とする前記実用新案登録請求の範囲第1項記載
の光プリンタ用発光ダイオード。
[Claims for Utility Model Registration] (1) A plurality of light emitting parts arranged in alignment on the surface,
In a light emitting diode for an optical printer, which has individual electrodes in ohmic contact with each of the light emitting parts, the ohmic contact area of the light emitting parts located at the ends of the light emitting diode is equal to the ohmic contact area of the light emitting part located approximately at the center of the light emitting diode. A light emitting diode for optical printers that is characterized by its smaller size. (2) Claim 1 of the above-mentioned utility model registration claim, characterized in that the light emitting part located at the end of the light emitting diode is in ohmic contact with the individual electrode on the end side of the light emitting diode from the center of the light emitting part. The light emitting diode for optical printers described.
JP1986196442U 1986-12-19 1986-12-19 Expired JPH0436280Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986196442U JPH0436280Y2 (en) 1986-12-19 1986-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986196442U JPH0436280Y2 (en) 1986-12-19 1986-12-19

Publications (2)

Publication Number Publication Date
JPS63100240U JPS63100240U (en) 1988-06-29
JPH0436280Y2 true JPH0436280Y2 (en) 1992-08-27

Family

ID=31155266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986196442U Expired JPH0436280Y2 (en) 1986-12-19 1986-12-19

Country Status (1)

Country Link
JP (1) JPH0436280Y2 (en)

Also Published As

Publication number Publication date
JPS63100240U (en) 1988-06-29

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