JPH043645B2 - - Google Patents
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- JPH043645B2 JPH043645B2 JP57181010A JP18101082A JPH043645B2 JP H043645 B2 JPH043645 B2 JP H043645B2 JP 57181010 A JP57181010 A JP 57181010A JP 18101082 A JP18101082 A JP 18101082A JP H043645 B2 JPH043645 B2 JP H043645B2
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- Prior art keywords
- zinc oxide
- drying
- voltage
- bismuth
- manufacturing
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Description
【発明の詳細な説明】
この発明は、避雷器、サージ吸収器に使用され
る、酸化亜鉛を主成分とする電圧非直線抵抗体の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a voltage nonlinear resistor containing zinc oxide as a main component and used in lightning arresters and surge absorbers.
従来、酸化亜鉛電圧非直線抵抗体を製造する場
合、一般的には主成分の酸化亜鉛をはじめ酸化ビ
スマス、酸化コバルトなどの添加物も酸化物粉末
原料として使用する。これら各種の粉末は水を加
えボールミル等の手段で混合され、乾燥後適当な
バインダを加えて顆粒をつくり、プレス成形を経
て1200℃前後の温度で焼成して焼結体を得る。こ
れに研磨電極の形成ののち素子が得られる。これ
らの工程中、顆粒を形成する造粒工程は大量生産
の場合、PVA(ポリビニールアルコール)などの
バインダを加えた泥漿をトルネードリアクタ、ス
プレイドライヤ等の乾燥装置を使つて乾燥顆粒を
造ることがよく行われている。 Conventionally, when producing a zinc oxide voltage nonlinear resistor, the main component, zinc oxide, and additives such as bismuth oxide and cobalt oxide are generally used as oxide powder raw materials. These various powders are mixed by adding water and using a ball mill or other means, and after drying, a suitable binder is added to form granules, which are then press-molded and fired at a temperature of around 1200°C to obtain a sintered body. After forming a polished electrode on this, an element is obtained. Among these processes, in the granulation process to form granules, in the case of mass production, it is possible to make dry granules by using a drying device such as a tornado reactor or spray dryer to make slurry with a binder such as PVA (polyvinyl alcohol) added. Well done.
電圧非直線抵抗体の種々の電気特性は、製造方
法及びその製造パラメータにより大きく変化する
ことは周知の通りである。例えば、混合工程の場
合、主成分以外の微量添加物が10種類近くあるこ
と、各粉末密度がかなり異なること(酸化亜鉛密
度:5.6g/cm3、酸化ビスマス密度8.9g/cm3、酸化
珪素密度2.2g/cm3等)などの理由により十分均一
な混合をするにはかなり困難な点があつた。混合
不良はセラミツク自体の均一性を悪化させ、ひい
ては電圧非直線性、寿命、各種耐量試験不良など
としてあらわれる。 It is well known that the various electrical characteristics of voltage nonlinear resistors vary greatly depending on the manufacturing method and manufacturing parameters. For example, in the case of the mixing process, there are nearly 10 types of trace additives other than the main ingredients, and the density of each powder is quite different (zinc oxide density: 5.6 g/cm 3 , bismuth oxide density 8.9 g/cm 3 , silicon oxide density: Due to reasons such as the density of 2.2 g/cm 3 etc., it was quite difficult to achieve sufficiently uniform mixing. Poor mixing deteriorates the uniformity of the ceramic itself, which in turn appears as voltage nonlinearity, failure in life, and failure in various durability tests.
混合の均一性の確保に関する言及は少ないが、
例えば特開昭48−97090号公報に記載されている
ような添加物イオン水溶液を酸化亜鉛粉末に加
え、混合するという方法が提案されている。この
混合物はミクロな意味でよく混合しており、得ら
れた焼結体は通常の粉末を出発原料としたものと
比較すると、粒子径もよく揃い欠陥も少なく、し
かも電流−電圧特性などもすぐれている。これら
の塩を混合する方法は、素子にすぐれた特性を付
与するが、実際の製作過程では泥漿の乾燥方式の
点で問題のあることがわかつた。 Although there is little mention of ensuring uniformity of mixing,
For example, a method has been proposed in which an aqueous additive ion solution is added to zinc oxide powder and mixed, as described in JP-A-48-97090. This mixture is well-mixed in a microscopic sense, and the resulting sintered body has a well-uniformed particle size, fewer defects, and excellent current-voltage characteristics compared to those using ordinary powder as a starting material. ing. Although the method of mixing these salts gives the device excellent properties, it has been found that there are problems in the drying method of the slurry in the actual manufacturing process.
これについて若干述べる。第1図に、酸化亜鉛
を主成分とする電圧非直線抵抗体の微細構造模型
を示す。図中、抵抗体の微細構造は酸化亜鉛を主
成分とする粒子1、主として酸化ビスマスを主成
分とする境界層2、酸化アンチモンを添加した場
合に生じるスピネル等の粒子3を含む。電圧非直
線性が発生する根源は、酸化亜鉛粒子同志、又は
酸化亜鉛及び酸化ビスマスの境界層に存在する電
気的な障壁に関連するものであると考えられてい
る。障壁にかかる電圧の大小により、(1)オーミツ
ク領域、(2)シヨツトキ領域、(3)トンネル領域、及
び(4)酸化亜鉛粒子の抵抗が電流−電圧特性を支配
する領域とにわかれる。避雷器の場合には課電条
件にもよるが、もれ電流領域はほぼ(2)領域に相当
し、いわゆる制限電圧と定義される電流領域
(10KA−20KA)は領域3及び4に相当する。す
なわち、保護特性のすぐれた素子は2の領域にお
ける電流安定性(寿命)がよく、3または4の領
域に関係する制限電圧ができる限り小さい方が望
ましい。 I will say a few words about this. FIG. 1 shows a microstructure model of a voltage nonlinear resistor whose main component is zinc oxide. In the figure, the fine structure of the resistor includes particles 1 mainly composed of zinc oxide, a boundary layer 2 mainly composed of bismuth oxide, and particles 3 of spinel or the like produced when antimony oxide is added. The source of voltage nonlinearity is thought to be related to electrical barriers existing between zinc oxide particles or in a boundary layer between zinc oxide and bismuth oxide. Depending on the magnitude of the voltage applied to the barrier, it can be divided into (1) an ohmic region, (2) a shot region, (3) a tunnel region, and (4) a region where the resistance of zinc oxide particles controls the current-voltage characteristics. In the case of a lightning arrester, the leakage current region roughly corresponds to region (2), and the current region (10KA-20KA) defined as the so-called limited voltage corresponds to regions 3 and 4, although it depends on the energization conditions. That is, it is desirable that an element with excellent protection characteristics has good current stability (life span) in the region 2, and that the limiting voltage related to the region 3 or 4 is as small as possible.
今までの微細構造の検討及び反応メカニズムの
検討から、酸化ビスマス(又は高温で酸化ビスマ
スになるような化合物例えば硝酸ビスマスなど)
は、焼成時には液相となり、酸化亜鉛粒子の結晶
成長を促進し、クロム等のイオンを固溶し、酸化
亜鉛粒子をおおうように存在する。コバルト、ニ
ツケル、マンガン、クロム、アルミニウムなどの
イオンは酸化亜鉛粒子に固溶するが、一部は酸化
アンチモン(もしくは高温で分解し酸化アンチモ
ンとなるもの例えば酒石酸アンチモン)とともに
スピネル粒子を形成する。これから、酸化亜鉛粒
子内に固溶する成分は主として大電流領域(前記
3及び4)に関連し、酸化ビスマスなどのように
酸化亜鉛と容易に反応せず、粒子間に存在するも
のについては主として低電流領域(前記1及び2
に関係する。なお、第2相のスピネル粒子は酸化
亜鉛部分、酸化ビスマス部分への各種イオンの分
配に関与していると考えられる。 Based on the examination of the microstructure and reaction mechanism, we have found that bismuth oxide (or compounds that become bismuth oxide at high temperatures, such as bismuth nitrate)
becomes a liquid phase during firing, promotes crystal growth of zinc oxide particles, dissolves ions such as chromium, and exists so as to cover the zinc oxide particles. Ions such as cobalt, nickel, manganese, chromium, and aluminum are dissolved in zinc oxide particles, but some of them form spinel particles together with antimony oxide (or substances that decompose at high temperatures to become antimony oxide, such as antimony tartrate). From this, it can be seen that the components dissolved in zinc oxide particles are mainly related to the large current region (3 and 4 above), do not easily react with zinc oxide, such as bismuth oxide, and are mainly present between particles. Low current region (1 and 2 above)
related to. The spinel particles of the second phase are considered to be involved in the distribution of various ions to the zinc oxide portion and the bismuth oxide portion.
さて、各種の塩の水溶液の作成にあたり、ニツ
ケル、コバルト、マンガン及びクロムなどの硝酸
塩は水によく溶解し、また酒石酸アンチモンも易
溶性である。一方、ビスマスの硝酸塩は、水には
不溶性で水酸化物状態の白沈を生じるが、これに
濃硝酸を添加してPHを小さくすることにより白沈
は消滅し均一に溶解する。十分に濃い硝酸々性中
でビスマスイオンは安定に存在するが、この溶液
を多量の酸化亜鉛粉末と反応させると、次式に従
い硝酸は酸化亜鉛とすみやかに反応するため、
ZoO+2HNO3→Zo(NO3)2+H2O
溶液のPHは大きくなりビスマスイオンはただち
に白沈を形成する。すなわち、硝酸を含む硝酸ビ
スマスの水溶液はみかけ上一様な水溶液である
が、この水溶液を酸化亜鉛粉末と混合するとすぐ
に白沈し固相を形成するため、他の添加イオン成
分との混合と同様には扱えず、均一な分散性にも
問題を生じる。 Now, when preparing aqueous solutions of various salts, nitrates such as nickel, cobalt, manganese, and chromium are easily soluble in water, and antimony tartrate is also easily soluble. On the other hand, bismuth nitrate is insoluble in water and produces a white precipitate in the hydroxide state, but by adding concentrated nitric acid to lower the pH, the white precipitate disappears and dissolves uniformly. Bismuth ions exist stably in sufficiently concentrated nitric acid, but when this solution is reacted with a large amount of zinc oxide powder, nitric acid quickly reacts with zinc oxide according to the following formula, so Z o O + 2HNO 3 →Z o (NO 3 ) 2 +H 2 O The pH of the solution increases and bismuth ions immediately form a white precipitate. In other words, an aqueous solution of bismuth nitrate containing nitric acid appears to be a uniform aqueous solution, but when this aqueous solution is mixed with zinc oxide powder, it immediately precipitates and forms a solid phase, so it is difficult to mix with other added ionic components. They cannot be handled in the same way, and problems arise with uniform dispersibility.
特に、これらの泥漿を静置して乾燥すると、ビ
スマスイオン以外は水溶液の蒸発乾固物となる
が、ビスマスは白沈物として固相から乾燥される
ことになり、しかもこの密度が極めて大きいこと
からビスマスに関しては均一性の高い乾燥粉末を
得ることが極めて困難となり、これが低電流側の
電流電圧特性を悪化させ、寿命特性にも悪影響を
与えることがわかつた。 In particular, when these slurries are allowed to stand and dry, the aqueous solution becomes evaporated to dryness except for bismuth ions, but bismuth is dried from the solid phase as a white precipitate, and this density is extremely high. It has become extremely difficult to obtain a highly uniform dry powder for bismuth, and it has been found that this deteriorates the current-voltage characteristics on the low current side and has an adverse effect on the life characteristics.
なお、ここで硝酸ビスマスの使用を主としての
べてきたが、塩化ビスマスをアルコール溶液で使
用した場合にも水が多量にあると容易に加水分解
を起し固相を形成するので同様である。 Although the use of bismuth nitrate has been mainly discussed here, the same is true when bismuth chloride is used in an alcoholic solution because it easily undergoes hydrolysis and forms a solid phase if a large amount of water is present.
いずれにしても、ビスマスイオンに関しては溶
液状態で酸化亜鉛と混合することは困難であるた
め、この白沈物が生じてもできるだけよりよい混
合状態で乾燥させる必要がある。こうすれば他の
添加イオンの分散性はもともと良好なため、全体
的に均一性が向上し、低電流側の電流電圧特性も
大巾に改善されることがわかつた。 In any case, it is difficult to mix bismuth ions with zinc oxide in a solution state, so even if this white precipitate occurs, it is necessary to dry the bismuth ion in the best possible mixed state. It has been found that by doing this, since the dispersibility of other added ions is originally good, the overall uniformity is improved and the current-voltage characteristics on the low current side are also greatly improved.
この発明は以上のような知見に基いてなされた
ものであり、酸化亜鉛も主成分とした電圧非直線
抵抗体の製造において、酸化亜鉛粉末、添加物の
金属塩水溶液及び添加物の一部の反応沈澱物を含
む混合泥漿を撹拌又は擾乱により均一化し、直ち
に該混合泥漿を微細固体に乾燥し、前記抵抗体原
料粉末を得る工程を含む電圧非直線抵抗体の製造
方法に存する。 This invention was made based on the above knowledge, and in the production of a voltage nonlinear resistor that also contains zinc oxide as a main component, zinc oxide powder, an aqueous metal salt solution of an additive, and a part of the additive are used. The method of manufacturing a voltage nonlinear resistor includes the steps of homogenizing a mixed slurry containing a reaction precipitate by stirring or agitation, and immediately drying the mixed slurry into a fine solid to obtain the resistor raw material powder.
よりよい混合状態で乾燥させる方法としては噴
霧乾燥器、流動層加熱器又は凍結乾燥器等を使用
したいくつかの方法が好適に用いられるが、いず
れにしても急速に乾燥させる方法が望ましい。こ
こでは噴霧乾燥器を使用した場合及び凍結乾燥法
を使用した場合にずいて実施例にもとずいて説明
する。 As a method of drying in a better mixed state, several methods using a spray dryer, a fluidized bed heater, a freeze dryer, etc. are preferably used, but in any case, a method of rapid drying is desirable. Here, a case where a spray dryer is used and a case where a freeze-drying method is used will be explained based on Examples.
実施例 1
実験室タイプの噴霧乾燥器を使用した場合を説
明する。Example 1 A case where a laboratory type spray dryer is used will be explained.
硝酸ニツケル3.8g、硝酸コバルト7.5g、硝酸
クロム5.2g、硝酸マンガン1.85gを100mlの水に
溶解した溶液を作り、これと100gの酸化亜鉛粉
末とを混合し泥漿を形成する。得た泥漿をスタラ
ー等により約30分間混合する。次に酒石酸13gと
酸化アンチモン3.8gを100gの水に溶解して前記
泥漿に加え、同様に撹拌を続ける。 A solution is prepared by dissolving 3.8 g of nickel nitrate, 7.5 g of cobalt nitrate, 5.2 g of chromium nitrate, and 1.85 g of manganese nitrate in 100 ml of water, and this is mixed with 100 g of zinc oxide powder to form a slurry. The obtained slurry is mixed for about 30 minutes using a stirrer or the like. Next, 13 g of tartaric acid and 3.8 g of antimony oxide are dissolved in 100 g of water and added to the slurry, and stirring is continued in the same manner.
硝酸ビスマス8.8gを水10mlと濃硝酸10mlの混
合物に溶解し、この溶液を撹拌しつつある前記酸
化亜鉛等を含む泥漿にゆつくり加えていく。約5
分間撹拌後、噴霧乾燥器の液輸送ポンプから泥漿
を送り、乾燥を開始する。本発明では当然のこと
ながら乾燥中は泥漿撹拌は続ける。第2図には使
用した二流体ノズル方式の市販品噴霧乾燥器の概
略図を示す。図中の噴霧乾燥器では例えば泥漿状
試料4、泥漿輸送ポンプ5、ノズル6、空気加熱
器7、乾燥チヤンバ8、排風器9、サイクロン1
0、コンプレツサ11、生成物収容器12及び1
3等を含む。本実験での動作条件は、熱風入口温
度150℃、チエンバ排風温度60℃、乾燥空気量0.5
m2/分、ノズル吐出圧3Kg/cm2、液送量10ml/分で
あつた。 8.8 g of bismuth nitrate is dissolved in a mixture of 10 ml of water and 10 ml of concentrated nitric acid, and this solution is slowly added to the stirring slurry containing zinc oxide, etc. Approximately 5
After stirring for a minute, the slurry is sent from the liquid transfer pump of the spray dryer to begin drying. In the present invention, as a matter of course, stirring of the slurry is continued during drying. FIG. 2 shows a schematic diagram of the two-fluid nozzle type commercially available spray dryer used. The spray dryer in the figure includes, for example, a slurry sample 4, a slurry transport pump 5, a nozzle 6, an air heater 7, a drying chamber 8, an exhaust fan 9, and a cyclone 1.
0, compressor 11, product containers 12 and 1
Including 3rd prize. The operating conditions in this experiment were: hot air inlet temperature 150℃, chamber exhaust air temperature 60℃, dry air amount 0.5
m 2 /min, nozzle discharge pressure 3 Kg/cm 2 , and liquid feed rate 10 ml/min.
なお得られた抵抗体原料粉末収率は約70%であ
つた。この粉末を通常の窯業的手法により造粒、
成形後焼成した。アルミニウム電極を溶射により
形成して電流電圧特性を測つた。 The yield of the resistor raw material powder obtained was approximately 70%. This powder is granulated using normal ceramic methods.
After molding, it was fired. An aluminum electrode was formed by thermal spraying and the current-voltage characteristics were measured.
なお、噴霧乾燥粉末を使用して素子を作成した
場合をA試料とし、更に比較例として噴霧乾燥せ
ずに泥漿を静止してオーブン等で乾燥した粉末か
ら出発して素子を作成した場合をB試料、また、
酸化亜鉛以外も全て酸化物粉末を使用した場合を
C試料として示す。なお、乾燥粉末作成以外の製
造工程はA、B、及びC試料では全て同一であ
る。 Sample A is the case where an element was created using spray-dried powder, and sample B is a comparative example where the element was created starting from powder that was dried in an oven or the like after leaving the slurry still without spray drying. sample, also
A case where all oxide powders other than zinc oxide were used is shown as sample C. Note that the manufacturing steps other than dry powder preparation are all the same for samples A, B, and C.
120℃で4時間焼成して得られた素子の収縮率
を下記の表に示す。 The shrinkage percentage of the element obtained by firing at 120°C for 4 hours is shown in the table below.
表・製法による素子収縮率の違い
A素子 B素子 C素子
23.5(%) 22(%) 18(%)
明らかにA試料及びB試料はC試料より大きく
収縮し、各種の塩を水溶液で加えたために素子内
部におけるセラミツク生成過程の諸反応の反応性
が向上したことがうかがえる。 Table: Differences in element shrinkage rates depending on manufacturing method Element A Element B Element C 23.5(%) 22(%) 18(%) Obviously, samples A and B shrunk more than sample C, and this was due to the addition of various salts in aqueous solutions. It can be seen that the reactivity of various reactions during the ceramic production process inside the device has improved.
第3図は上記3種の試料の電流電圧特性の測定
結果を示す。試料Aは全電流領域で最も優れた特
性を示し、B試料では低電流領域が、C試料では
大電流及び小電流領域両方が共に劣つていること
がわかる。 FIG. 3 shows the measurement results of the current-voltage characteristics of the three types of samples mentioned above. It can be seen that sample A exhibits the best characteristics in the entire current range, sample B has poorer characteristics in the low current region, and sample C has poorer characteristics in both the large current and small current regions.
なお、流動層式の乾燥器も、噴霧乾燥器と類似
しており得られた素子の電流・電圧特性も同様だ
つた。 Note that the fluidized bed dryer is similar to the spray dryer, and the current and voltage characteristics of the resulting devices were also similar.
実施例 2
すでに凍結乾燥法として知られている方法を使
用した場合を述べる。例えばAm.Ceram.Soc.
Bull.の51巻159頁(1972年)にあるような方法で
ある。この方法の概念図を第4図に示す。Example 2 A case will be described in which a method already known as a freeze-drying method is used. For example, Am.Ceram.Soc.
This is the method described in Vol. 51, p. 159 of Bull. (1972). A conceptual diagram of this method is shown in FIG.
図中の乾燥器では例えばドライアイス、アセト
ンなどを使用した寒剤14、ヘキサン溶液15、
スタラー等の撹拌装置16、実施例1で述べた各
種の塩、酸化亜鉛及びビスマス化合物など全添加
物を含む混合泥漿17等を含む。18から窒素ガ
スを送りノズル19から細かい霧状になつた泥漿
をヘキサン溶液中に入れ瞬時に凍結させる。凍結
した泥漿はヘキサン溶液の底にたまるので、これ
をメツシユ上で集め、すばやく減圧乾燥する。真
空度は10-1〜10-2mmgH程度である。 In the dryer in the figure, for example, a cryogen 14 using dry ice, acetone, etc., a hexane solution 15,
It includes a stirring device 16 such as a stirrer, a mixed slurry 17 containing all the additives such as various salts, zinc oxide, and bismuth compounds described in Example 1. Nitrogen gas is sent from the nozzle 18, and the slurry in the form of a fine mist is put into a hexane solution and instantly frozen. The frozen slurry will accumulate at the bottom of the hexane solution, so collect it on a mesh and quickly dry it under reduced pressure. The degree of vacuum is approximately 10 -1 to 10 -2 mmgH.
このようにして乾燥した抵抗体原料粉末から通
常の窯業的手法により作成した素子をD試料とし
て、電流電圧特性を調べるとほぼ第3図に示めし
たA試料と同一な特性であることが確認された。 When we examined the current-voltage characteristics of a device made from the thus dried resistor raw material powder using normal ceramic methods as sample D, we confirmed that it had almost the same characteristics as sample A shown in Figure 3. It was done.
以上のように、セラミツクスの均質性をあげ、
かつ電流電圧特性改善のために添加物各種イオン
水溶液、ビスマス白沈物及び酸化亜鉛の三者から
なる泥漿を静置することなしに撹拌等により均一
化し、微細に乾燥固化させこれを原料として電圧
非直線抵抗体を製造することにより、その特性の
改善が実現された。 As mentioned above, improving the homogeneity of ceramics,
In addition, in order to improve current-voltage characteristics, a slurry consisting of various ion aqueous solutions, bismuth white precipitate, and zinc oxide is homogenized by stirring without being allowed to stand still, finely dried and solidified, and this is used as a raw material to generate voltage. By manufacturing non-linear resistors, improvements in their properties have been realized.
第1図は電圧非直線抵抗体の微細構造を示す模
式図、第2図はこの発明に使用する噴霧乾燥器の
概略図、第3図はこの発明方法及び従来法により
製造した素子の電流電圧特性を示す図、第4図は
この発明に使用する凍結乾燥法の概略図である。
図中、1…酸化亜鉛を主成分とする粒子、2…
酸化ビスマスを主成分とする境界層、3…スピネ
ル粒子、4…試料泥漿、5…泥漿輸送ポンプ、6
…ノズル、7…空気加熱器、8…乾燥チヤンバ、
9…排風器、10…サイクロン、11…コンプレ
ツサ、12及び13…生成物収納容器、14…ド
ライアイス−アセトン(寒剤)、15…ヘキサン
溶液、16…撹拌装置、17…混合泥漿、18…
窒素ガス、19…ノズル、20…断熱材。
Fig. 1 is a schematic diagram showing the fine structure of a voltage nonlinear resistor, Fig. 2 is a schematic diagram of a spray dryer used in the present invention, and Fig. 3 is a current-voltage diagram of devices manufactured by the method of the present invention and the conventional method. Figure 4, which shows the characteristics, is a schematic diagram of the freeze-drying method used in the present invention. In the figure, 1...particles whose main component is zinc oxide, 2...
Boundary layer containing bismuth oxide as a main component, 3... Spinel particles, 4... Sample slurry, 5... Slipper transport pump, 6
... nozzle, 7 ... air heater, 8 ... drying chamber,
9... Ventilator, 10... Cyclone, 11... Compressor, 12 and 13... Product storage container, 14... Dry ice-acetone (cold agent), 15... Hexane solution, 16... Stirring device, 17... Mixed slurry, 18...
Nitrogen gas, 19...nozzle, 20...insulating material.
Claims (1)
製造において、酸化亜鉛粉末、添加物の金属塩水
溶液及び添加物の一部の反応沈澱物を含む混合泥
漿を撹拌又は擾乱により均一化し、直ちに該混合
泥漿を微細固体に乾燥し、前記抵抗体原料粉末を
得る工程を含むことを特徴とする、電圧非直線抵
抗体の製造方法。 2 乾燥を噴霧乾燥器又は流動層加熱器により蒸
発を利用して行なう特許請求の範囲第1項記載の
電圧非直線抵抗体の製造方法。 3 乾燥を凍結乾燥器により昇華を利用して行な
う特許請求の範囲第1項記載の電圧非直線抵抗体
の製造方法。[Claims] 1. In the production of a voltage non-linear resistor containing zinc oxide as a main component, a mixed slurry containing zinc oxide powder, an aqueous metal salt solution of an additive, and a reaction precipitate of a part of the additive is stirred or A method for manufacturing a voltage nonlinear resistor, comprising the steps of homogenizing by agitation and immediately drying the mixed slurry into a fine solid to obtain the resistor raw material powder. 2. The method for manufacturing a voltage nonlinear resistor according to claim 1, wherein drying is performed using evaporation in a spray dryer or a fluidized bed heater. 3. The method for manufacturing a voltage nonlinear resistor according to claim 1, wherein drying is performed using sublimation in a freeze dryer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57181010A JPS5968906A (en) | 1982-10-13 | 1982-10-13 | Manufacturing method of voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57181010A JPS5968906A (en) | 1982-10-13 | 1982-10-13 | Manufacturing method of voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5968906A JPS5968906A (en) | 1984-04-19 |
| JPH043645B2 true JPH043645B2 (en) | 1992-01-23 |
Family
ID=16093162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57181010A Granted JPS5968906A (en) | 1982-10-13 | 1982-10-13 | Manufacturing method of voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5968906A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5929152B2 (en) * | 2011-12-14 | 2016-06-01 | 株式会社明電舎 | Method for manufacturing non-linear resistor element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2444822A1 (en) * | 1974-09-19 | 1976-04-08 | Basf Ag | 2,1,3-BENZOTHIADIAZIN (4) ON-2,2 DIOXIDE DERIVATIVES |
| JPS6019643B2 (en) * | 1980-01-18 | 1985-05-17 | 松下電器産業株式会社 | Manufacturing method of voltage nonlinear resistor |
| JPS60928B2 (en) * | 1980-01-18 | 1985-01-11 | 松下電器産業株式会社 | Manufacturing method of voltage nonlinear resistor |
-
1982
- 1982-10-13 JP JP57181010A patent/JPS5968906A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5968906A (en) | 1984-04-19 |
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