JPH04365302A - Thin film resistor capable of functional trimming - Google Patents
Thin film resistor capable of functional trimmingInfo
- Publication number
- JPH04365302A JPH04365302A JP3236746A JP23674691A JPH04365302A JP H04365302 A JPH04365302 A JP H04365302A JP 3236746 A JP3236746 A JP 3236746A JP 23674691 A JP23674691 A JP 23674691A JP H04365302 A JPH04365302 A JP H04365302A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base board
- thin film
- trimming
- resistor films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 239000011347 resin Substances 0.000 claims abstract description 4
- 229920005989 resin Polymers 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000013035 low temperature curing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、電子機器に使用される
薄膜抵抗器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film resistor used in electronic equipment.
【0002】0002
【従来の技術】レーザビームを用い機能トリミングを行
なうためには抵抗膜が露出している必要があった。2. Description of the Related Art In order to perform functional trimming using a laser beam, it is necessary that a resistive film be exposed.
【0003】0003
【発明が解決しようとする課題】レーザビームを用い機
能トリミングを行なうためには、抵抗膜が露出している
必要があるが、一般に薄膜抵抗器に於ては抵抗膜が露出
していると耐環境的並びに機械的な影響による抵抗値の
変化が生じ易く抵抗器の性能を悪化させる原因になって
いた。エポキシ系樹脂或はフェノール系樹脂の保護塗装
膜は、その樹脂の特性からレーザビームによる機能トリ
ミングを行ない得る状態にすることは困難である。更に
、感光性を持たない樹脂は保護膜を選択的に加工するこ
とが出来ない。[Problems to be Solved by the Invention] In order to perform functional trimming using a laser beam, the resistive film must be exposed, but in general, with thin film resistors, if the resistive film is exposed, the resistance The resistance value tends to change due to environmental and mechanical influences, which causes deterioration in the performance of the resistor. Due to the characteristics of the resin, it is difficult to make a protective coating film made of epoxy resin or phenol resin into a state where it can be functionally trimmed with a laser beam. Furthermore, resins that do not have photosensitivity cannot be selectively processed into protective films.
【0004】0004
【課題を解決するための手段】本発明は絶縁基板表面に
着膜した抵抗膜を所定の形状及び抵抗値とした後該抵抗
膜を含む絶縁基板上に感光性ポリイミドを塗布し露光・
現像処理によって必要部のみ露出させた後、加熱硬化さ
せるものである。保護膜として感光性ポリイミドを用い
ることにより、製品の耐環境的特性並びに機械的強度を
維持し、かつ膜の上からの機能トリミングが可能となっ
た。[Means for Solving the Problems] The present invention involves forming a resistive film deposited on the surface of an insulating substrate into a predetermined shape and resistance value, and then coating the insulating substrate containing the resistive film with photosensitive polyimide, exposing it to light.
After exposing only the necessary parts through development processing, the film is heated and cured. By using photosensitive polyimide as a protective film, the environmental resistance and mechanical strength of the product can be maintained, and functions can be trimmed from above the film.
【0005】[0005]
【実施例1】 薄膜ネットワーク抵抗器この実施例に
於ては、電気的絶縁基板として50mm×60mm、厚
みが0.635mmのセラミック基板を用いた。該基板
に蒸着法によりニッケルクロム系の抵抗膜及び一次電極
膜を着膜し、フォトエッチング法でパターン形成した後
、350℃1時間の熱処理を施しレーザトリミングで抵
抗値調整を行なった。本製品の仕様は、6KΩ3素子,
±10ppm/℃である。次に該基板に低温硬化型の感
光性ポリイミドをスピンコート法によって約2μの膜厚
で塗布する。これを露光・現像によって電極部を露出さ
せ300℃1時間のポストベークによって硬化させる。
次いで該基板をモジュール単位に分割しリード挿入及び
はんだ付を行なって図1に示す製品が完成した。機能ト
リミングの領域は0〜4KΩの範囲で調整が可能である
。Example 1 Thin Film Network Resistor In this example, a ceramic substrate measuring 50 mm x 60 mm and having a thickness of 0.635 mm was used as the electrically insulating substrate. A nickel-chromium-based resistance film and a primary electrode film were deposited on the substrate by vapor deposition, patterned by photoetching, heat treated at 350° C. for 1 hour, and the resistance value was adjusted by laser trimming. The specifications of this product are 6KΩ 3 elements,
±10 ppm/°C. Next, a low-temperature curing photosensitive polyimide is applied to the substrate to a thickness of about 2 μm by spin coating. This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the board was divided into modules, leads were inserted and soldered, and the product shown in FIG. 1 was completed. The functional trimming area can be adjusted in the range of 0 to 4KΩ.
【0006】[0006]
【実施例2】 薄膜抵抗温度センサ
この実施例に於ては、電気的絶縁基板として50mm×
60mm、厚みが0.635mmのセラミック基板を用
いた。該基板に蒸着法によりニッケルを着膜し、フォト
エッチング法にてパターン形成した後、320℃1時間
の熱処理を施した。本製品の仕様は、約70Ω,約+5
000ppm/℃である。次に該基板に低温硬化型の感
光性ポリイミドをスピンコート法によって約2μの膜厚
で塗布する。これを露光・現像によって電極部を露出さ
せ300℃1時間のポストベークによって硬化させる。
次いで該基板を素子単位に分割し、はんだ付を行なって
図2に示す製品が完成した。機能トリミングの領域は0
〜50Ωの範囲で調整が可能である。[Example 2] Thin film resistance temperature sensor In this example, the electrically insulating substrate is 50mm x
A ceramic substrate having a diameter of 60 mm and a thickness of 0.635 mm was used. A nickel film was deposited on the substrate by vapor deposition, and a pattern was formed by photoetching, followed by heat treatment at 320° C. for 1 hour. The specifications of this product are approximately 70Ω, approximately +5
000 ppm/°C. Next, a low-temperature curing photosensitive polyimide is applied to the substrate to a thickness of about 2 μm by spin coating. This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the board was divided into elements and soldered to complete the product shown in FIG. 2. Functional trimming area is 0
Adjustment is possible in the range of ~50Ω.
【0007】[0007]
【実施例3】 薄膜チップ抵抗器
この実施例に於ては、電気的絶縁基板として50mm×
60mm、厚みが0.4mmのセラミック基板を用いた
。該基板にスパッタ法によりニッケルクロム系の抵抗膜
及び一次電極膜を着膜し、フォトエッチング法でパター
ン形成した後、350℃1時間の熱処理を施しレーザト
リミングで抵抗値調整を行なった。本製品の仕様は、2
0Ω,±10ppm/℃である。次に該基板に低温硬化
型の感光性ポリイミドをスピンコート法によって約2μ
の膜厚で塗布する。これを露光・現像によって電極部を
露出させ300℃1時間のポストベークによって硬化さ
せる。次いでめっきにより二次電極形成分割を行なって
図3に示す製品が完成した。機能トリミングの領域は0
〜30Ωの範囲で調整が可能である。[Example 3] Thin film chip resistor In this example, the electrically insulating substrate is 50 mm x
A ceramic substrate with a diameter of 60 mm and a thickness of 0.4 mm was used. A nickel-chromium-based resistive film and a primary electrode film were deposited on the substrate by sputtering, patterned by photoetching, heat treated at 350° C. for 1 hour, and the resistance value was adjusted by laser trimming. The specifications of this product are 2.
0Ω, ±10 ppm/°C. Next, a low-temperature curing photosensitive polyimide of approximately 2 μm was applied to the substrate by spin coating.
Apply at a film thickness of . This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the secondary electrode was formed and divided by plating, and the product shown in FIG. 3 was completed. Functional trimming area is 0
Adjustment is possible in the range of ~30Ω.
【0008】[0008]
【発明の効果】本発明により機能トリミングが可能で耐
環境的並びに機械的に安定した特性を持つ抵抗器の製造
が可能となった。[Effects of the Invention] According to the present invention, it has become possible to manufacture a resistor that can be functionally trimmed and has environmental resistance and mechanically stable characteristics.
【0009】[0009]
【図1】本発明の製造法で製造した薄膜ネットワーク抵
抗器を示す上面図である。FIG. 1 is a top view showing a thin film network resistor manufactured by the manufacturing method of the present invention.
【図2】本発明の製造法で製造した薄膜抵抗センサを示
す上面図である。FIG. 2 is a top view showing a thin film resistance sensor manufactured by the manufacturing method of the present invention.
【図3】本発明の製造法で製造した薄膜チップ抵抗器を
示す上面図である。FIG. 3 is a top view showing a thin film chip resistor manufactured by the manufacturing method of the present invention.
1. セラミック基板 2. 感光性ポリイミド膜 3. ニッケルクロム系抵抗膜 4. はんだ電極 5. 一次トリミング領域 6. 機能トリミング領域 7. ニッケル系抵抗膜 8. めっき電極 1. Ceramic substrate 2. Photosensitive polyimide film 3. Nickel chromium-based resistive film 4. Solder electrode 5. Primary trimming area 6. Functional trimming area 7. Nickel-based resistive film 8. Plating electrode
Claims (1)
抗膜と電極から成る薄膜抵抗器に於て、該抵抗膜に感光
性を持つ樹脂を保護膜として塗装し、機能トリミングを
可能としたことを特徴とする薄膜抵抗器。Claim 1: In a thin film resistor consisting of a resistive film and electrodes deposited on the surface of an insulating substrate such as a ceramic, the resistive film is coated with a photosensitive resin as a protective film to enable functional trimming. A thin film resistor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3236746A JPH04365302A (en) | 1991-06-12 | 1991-06-12 | Thin film resistor capable of functional trimming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3236746A JPH04365302A (en) | 1991-06-12 | 1991-06-12 | Thin film resistor capable of functional trimming |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04365302A true JPH04365302A (en) | 1992-12-17 |
Family
ID=17005180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3236746A Pending JPH04365302A (en) | 1991-06-12 | 1991-06-12 | Thin film resistor capable of functional trimming |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04365302A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770883A (en) * | 1995-09-19 | 1998-06-23 | Nippondenso Co., Ltd. | Semiconductor sensor with a built-in amplification circuit |
-
1991
- 1991-06-12 JP JP3236746A patent/JPH04365302A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770883A (en) * | 1995-09-19 | 1998-06-23 | Nippondenso Co., Ltd. | Semiconductor sensor with a built-in amplification circuit |
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