JPH04365302A - Thin film resistor capable of functional trimming - Google Patents

Thin film resistor capable of functional trimming

Info

Publication number
JPH04365302A
JPH04365302A JP3236746A JP23674691A JPH04365302A JP H04365302 A JPH04365302 A JP H04365302A JP 3236746 A JP3236746 A JP 3236746A JP 23674691 A JP23674691 A JP 23674691A JP H04365302 A JPH04365302 A JP H04365302A
Authority
JP
Japan
Prior art keywords
film
base board
thin film
trimming
resistor films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3236746A
Other languages
Japanese (ja)
Inventor
Satoru Ikeda
悟 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tama Electric Co Ltd
Original Assignee
Tama Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tama Electric Co Ltd filed Critical Tama Electric Co Ltd
Priority to JP3236746A priority Critical patent/JPH04365302A/en
Publication of JPH04365302A publication Critical patent/JPH04365302A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To facilitate functional trimming, by applying a photosensitive resin to resistor films on an insulation base board as a protective film. CONSTITUTION:Using a ceramic base board 1 as an electrically insulating base board, resistor films 3 and primary electrode films 4 are formed on the base board 1 by a deposition method. After forming patterns by a photoetching method, a heat treatment is performed, and the resistance values of the resistor films 3 are trimmed by laser trimming. Then, on the base board 1, a photosensitive polyimide film 2 of a cold cure type is formed by a spin coat method. Successively, the electrode parts 4 are exposed by exposing the photosensitive film 2 and by developing it, and they are cured by post baking. Thereby, the product comprising the resistor films can maintain its characteristic resistant to environments and its mechanical strength, and it is made possible to perform a functional trimming from above the film 2.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、電子機器に使用される
薄膜抵抗器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film resistor used in electronic equipment.

【0002】0002

【従来の技術】レーザビームを用い機能トリミングを行
なうためには抵抗膜が露出している必要があった。
2. Description of the Related Art In order to perform functional trimming using a laser beam, it is necessary that a resistive film be exposed.

【0003】0003

【発明が解決しようとする課題】レーザビームを用い機
能トリミングを行なうためには、抵抗膜が露出している
必要があるが、一般に薄膜抵抗器に於ては抵抗膜が露出
していると耐環境的並びに機械的な影響による抵抗値の
変化が生じ易く抵抗器の性能を悪化させる原因になって
いた。エポキシ系樹脂或はフェノール系樹脂の保護塗装
膜は、その樹脂の特性からレーザビームによる機能トリ
ミングを行ない得る状態にすることは困難である。更に
、感光性を持たない樹脂は保護膜を選択的に加工するこ
とが出来ない。
[Problems to be Solved by the Invention] In order to perform functional trimming using a laser beam, the resistive film must be exposed, but in general, with thin film resistors, if the resistive film is exposed, the resistance The resistance value tends to change due to environmental and mechanical influences, which causes deterioration in the performance of the resistor. Due to the characteristics of the resin, it is difficult to make a protective coating film made of epoxy resin or phenol resin into a state where it can be functionally trimmed with a laser beam. Furthermore, resins that do not have photosensitivity cannot be selectively processed into protective films.

【0004】0004

【課題を解決するための手段】本発明は絶縁基板表面に
着膜した抵抗膜を所定の形状及び抵抗値とした後該抵抗
膜を含む絶縁基板上に感光性ポリイミドを塗布し露光・
現像処理によって必要部のみ露出させた後、加熱硬化さ
せるものである。保護膜として感光性ポリイミドを用い
ることにより、製品の耐環境的特性並びに機械的強度を
維持し、かつ膜の上からの機能トリミングが可能となっ
た。
[Means for Solving the Problems] The present invention involves forming a resistive film deposited on the surface of an insulating substrate into a predetermined shape and resistance value, and then coating the insulating substrate containing the resistive film with photosensitive polyimide, exposing it to light.
After exposing only the necessary parts through development processing, the film is heated and cured. By using photosensitive polyimide as a protective film, the environmental resistance and mechanical strength of the product can be maintained, and functions can be trimmed from above the film.

【0005】[0005]

【実施例1】  薄膜ネットワーク抵抗器この実施例に
於ては、電気的絶縁基板として50mm×60mm、厚
みが0.635mmのセラミック基板を用いた。該基板
に蒸着法によりニッケルクロム系の抵抗膜及び一次電極
膜を着膜し、フォトエッチング法でパターン形成した後
、350℃1時間の熱処理を施しレーザトリミングで抵
抗値調整を行なった。本製品の仕様は、6KΩ3素子,
±10ppm/℃である。次に該基板に低温硬化型の感
光性ポリイミドをスピンコート法によって約2μの膜厚
で塗布する。これを露光・現像によって電極部を露出さ
せ300℃1時間のポストベークによって硬化させる。 次いで該基板をモジュール単位に分割しリード挿入及び
はんだ付を行なって図1に示す製品が完成した。機能ト
リミングの領域は0〜4KΩの範囲で調整が可能である
。
Example 1 Thin Film Network Resistor In this example, a ceramic substrate measuring 50 mm x 60 mm and having a thickness of 0.635 mm was used as the electrically insulating substrate. A nickel-chromium-based resistance film and a primary electrode film were deposited on the substrate by vapor deposition, patterned by photoetching, heat treated at 350° C. for 1 hour, and the resistance value was adjusted by laser trimming. The specifications of this product are 6KΩ 3 elements,
±10 ppm/°C. Next, a low-temperature curing photosensitive polyimide is applied to the substrate to a thickness of about 2 μm by spin coating. This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the board was divided into modules, leads were inserted and soldered, and the product shown in FIG. 1 was completed. The functional trimming area can be adjusted in the range of 0 to 4KΩ.

【0006】[0006]

【実施例2】  薄膜抵抗温度センサ この実施例に於ては、電気的絶縁基板として50mm×
60mm、厚みが0.635mmのセラミック基板を用
いた。該基板に蒸着法によりニッケルを着膜し、フォト
エッチング法にてパターン形成した後、320℃1時間
の熱処理を施した。本製品の仕様は、約70Ω,約+5
000ppm/℃である。次に該基板に低温硬化型の感
光性ポリイミドをスピンコート法によって約2μの膜厚
で塗布する。これを露光・現像によって電極部を露出さ
せ300℃1時間のポストベークによって硬化させる。 次いで該基板を素子単位に分割し、はんだ付を行なって
図2に示す製品が完成した。機能トリミングの領域は0
〜50Ωの範囲で調整が可能である。
[Example 2] Thin film resistance temperature sensor In this example, the electrically insulating substrate is 50mm x
A ceramic substrate having a diameter of 60 mm and a thickness of 0.635 mm was used. A nickel film was deposited on the substrate by vapor deposition, and a pattern was formed by photoetching, followed by heat treatment at 320° C. for 1 hour. The specifications of this product are approximately 70Ω, approximately +5
000 ppm/°C. Next, a low-temperature curing photosensitive polyimide is applied to the substrate to a thickness of about 2 μm by spin coating. This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the board was divided into elements and soldered to complete the product shown in FIG. 2. Functional trimming area is 0
Adjustment is possible in the range of ~50Ω.

【0007】[0007]

【実施例3】  薄膜チップ抵抗器 この実施例に於ては、電気的絶縁基板として50mm×
60mm、厚みが0.4mmのセラミック基板を用いた
。該基板にスパッタ法によりニッケルクロム系の抵抗膜
及び一次電極膜を着膜し、フォトエッチング法でパター
ン形成した後、350℃1時間の熱処理を施しレーザト
リミングで抵抗値調整を行なった。本製品の仕様は、2
0Ω,±10ppm/℃である。次に該基板に低温硬化
型の感光性ポリイミドをスピンコート法によって約2μ
の膜厚で塗布する。これを露光・現像によって電極部を
露出させ300℃1時間のポストベークによって硬化さ
せる。次いでめっきにより二次電極形成分割を行なって
図3に示す製品が完成した。機能トリミングの領域は0
〜30Ωの範囲で調整が可能である。
[Example 3] Thin film chip resistor In this example, the electrically insulating substrate is 50 mm x
A ceramic substrate with a diameter of 60 mm and a thickness of 0.4 mm was used. A nickel-chromium-based resistive film and a primary electrode film were deposited on the substrate by sputtering, patterned by photoetching, heat treated at 350° C. for 1 hour, and the resistance value was adjusted by laser trimming. The specifications of this product are 2.
0Ω, ±10 ppm/°C. Next, a low-temperature curing photosensitive polyimide of approximately 2 μm was applied to the substrate by spin coating.
Apply at a film thickness of . This was exposed to light and developed to expose the electrode portion, and then post-baked at 300° C. for 1 hour to harden it. Next, the secondary electrode was formed and divided by plating, and the product shown in FIG. 3 was completed. Functional trimming area is 0
Adjustment is possible in the range of ~30Ω.

【0008】[0008]

【発明の効果】本発明により機能トリミングが可能で耐
環境的並びに機械的に安定した特性を持つ抵抗器の製造
が可能となった。
[Effects of the Invention] According to the present invention, it has become possible to manufacture a resistor that can be functionally trimmed and has environmental resistance and mechanically stable characteristics.

【0009】[0009]

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の製造法で製造した薄膜ネットワーク抵
抗器を示す上面図である。
FIG. 1 is a top view showing a thin film network resistor manufactured by the manufacturing method of the present invention.

【図2】本発明の製造法で製造した薄膜抵抗センサを示
す上面図である。
FIG. 2 is a top view showing a thin film resistance sensor manufactured by the manufacturing method of the present invention.

【図3】本発明の製造法で製造した薄膜チップ抵抗器を
示す上面図である。
FIG. 3 is a top view showing a thin film chip resistor manufactured by the manufacturing method of the present invention.

【符号の説明】[Explanation of symbols]

1.  セラミック基板 2.  感光性ポリイミド膜 3.  ニッケルクロム系抵抗膜 4.  はんだ電極 5.  一次トリミング領域 6.  機能トリミング領域 7.  ニッケル系抵抗膜 8.  めっき電極 1. Ceramic substrate 2. Photosensitive polyimide film 3. Nickel chromium-based resistive film 4. Solder electrode 5. Primary trimming area 6. Functional trimming area 7. Nickel-based resistive film 8. Plating electrode

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】セラミック等の絶縁基板表面に着膜した抵
抗膜と電極から成る薄膜抵抗器に於て、該抵抗膜に感光
性を持つ樹脂を保護膜として塗装し、機能トリミングを
可能としたことを特徴とする薄膜抵抗器。
Claim 1: In a thin film resistor consisting of a resistive film and electrodes deposited on the surface of an insulating substrate such as a ceramic, the resistive film is coated with a photosensitive resin as a protective film to enable functional trimming. A thin film resistor characterized by:
JP3236746A 1991-06-12 1991-06-12 Thin film resistor capable of functional trimming Pending JPH04365302A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3236746A JPH04365302A (en) 1991-06-12 1991-06-12 Thin film resistor capable of functional trimming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3236746A JPH04365302A (en) 1991-06-12 1991-06-12 Thin film resistor capable of functional trimming

Publications (1)

Publication Number Publication Date
JPH04365302A true JPH04365302A (en) 1992-12-17

Family

ID=17005180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3236746A Pending JPH04365302A (en) 1991-06-12 1991-06-12 Thin film resistor capable of functional trimming

Country Status (1)

Country Link
JP (1) JPH04365302A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770883A (en) * 1995-09-19 1998-06-23 Nippondenso Co., Ltd. Semiconductor sensor with a built-in amplification circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770883A (en) * 1995-09-19 1998-06-23 Nippondenso Co., Ltd. Semiconductor sensor with a built-in amplification circuit

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