JPH04369846A - Method of mounting semiconductor device - Google Patents
Method of mounting semiconductor deviceInfo
- Publication number
- JPH04369846A JPH04369846A JP3060023A JP6002391A JPH04369846A JP H04369846 A JPH04369846 A JP H04369846A JP 3060023 A JP3060023 A JP 3060023A JP 6002391 A JP6002391 A JP 6002391A JP H04369846 A JPH04369846 A JP H04369846A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- substrate
- flexible film
- bumps
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ワイヤレス（フェース
ダウン）ボンディング法により、半導体装置を基板に実
装する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor device on a substrate by wireless (face-down) bonding.
【０００２】0002
【従来の技術】バンプを介して半導体装置と基板をワイ
ヤレス（フェースダウン）接合する実装方法は、ワイヤ
ボンディング法に比べ実装密度が小さい、一括（ギャン
グ）ボンディングを行うため接合時間が短い等の特長を
有し、現在開発されつつある実装方法である。[Background Art] A mounting method that wirelessly (face-down) bonds a semiconductor device and a board through bumps has the advantages of a lower mounting density than the wire bonding method, and a shorter bonding time because gang bonding is performed. This is an implementation method currently being developed.
【０００３】図９〜図１１はかかる従来の接合方法を示
すもので、図において、１はプラスチック、セラミック
等よりなる基板、２は基板１に形成された導体、３はバ
ンプ、４は封止樹脂、５は半導体装置、６は電極パッド
、７は接着剤、８はキャップである。FIGS. 9 to 11 show such conventional bonding methods, and in the figures, 1 is a substrate made of plastic, ceramic, etc., 2 is a conductor formed on the substrate 1, 3 is a bump, and 4 is a seal. 5 is a resin, 5 is a semiconductor device, 6 is an electrode pad, 7 is an adhesive, and 8 is a cap.
【０００４】図４に示すものは、バンプ３に半田を用い
たもので、バンプ接合部に集中する応力を緩和する、耐
湿性を向上する等の目的で、接合後半導体装置５の下部
に封止樹脂４が充填され、さらに、キャップ８により気
密封止されている。The device shown in FIG. 4 uses solder for the bumps 3, and is sealed at the bottom of the semiconductor device 5 after bonding for the purpose of alleviating stress concentrated at the bump joints and improving moisture resistance. It is filled with a sealing resin 4 and hermetically sealed with a cap 8.
【０００５】図５に示すものは、バンプ３に金または銅
等の金属を用いたもので、前記従来例と同様の目的で、
接合後半導体装置５の下部に封止樹脂４が充填され、さ
らに、キャップ８により気密封止されている。この金属
バンプ３と半導体装置５の電極パッド６との接合は、金
属バンプ３が基板導体２上に形成されている場合、熱圧
着による金属結合で行われる。The bump shown in FIG. 5 uses metal such as gold or copper for the bump 3, and has the same purpose as the conventional example.
After bonding, the lower part of the semiconductor device 5 is filled with a sealing resin 4, and further hermetically sealed with a cap 8. When the metal bump 3 is formed on the substrate conductor 2, the metal bump 3 and the electrode pad 6 of the semiconductor device 5 are bonded by thermocompression bonding.
【０００６】また、金属バンプ３が半導体装置５側に形
成されている所謂フリップチップタイプのものは、図６
に示すように、その金属バンプ３上に導電性接着剤（例
えば銀ペースト）９等を塗布し、その導電性接着剤９を
介して基板導体２と接続される。Furthermore, a so-called flip-chip type device in which metal bumps 3 are formed on the semiconductor device 5 side is shown in FIG.
As shown in FIG. 2, a conductive adhesive (for example, silver paste) 9 or the like is applied onto the metal bump 3, and the bump is connected to the substrate conductor 2 via the conductive adhesive 9.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述の
如き従来例においては、バンプ３と半導体装置５または
バンプ３と導体（フリップチップ）２が金属的に結合さ
れていたり、また、導電性接着剤９等により固定されて
結合しているため、基板１と半導体装置５の膨張差によ
る応力を吸収する能力が極めて低く、ヒートサイクルの
ような熱ストレスにより、接合部にクラック等が入り破
断され、信頼性に欠けるという欠点があった。また、導
電性接着剤９等をバンプ３表面に塗布して接続する方法
は、接続抵抗が高いという問題もある。However, in the conventional examples as described above, the bump 3 and the semiconductor device 5 or the bump 3 and the conductor (flip chip) 2 are bonded metallically, or 9 or the like, the ability to absorb stress due to the expansion difference between the substrate 1 and the semiconductor device 5 is extremely low, and thermal stress such as a heat cycle can cause cracks or the like to break in the bonded portion. The drawback was that it lacked reliability. Furthermore, the method of applying a conductive adhesive 9 or the like to the surface of the bump 3 for connection has a problem in that the connection resistance is high.
【０００８】さらに、このような従来の封止構造におい
ては、半導体装置５を基板１に搭載した後、凹状のキャ
ップ８を被せ気密封止するため、その封止工程が余計に
かかるという問題もある。キャップ封止の代わりに半導
体装置全体を、チクソ性の高い樹脂で滴下法により封止
する方法も有るが、この方法においても前記方法と同様
にその封止工程が余計にかかるという問題がある。Furthermore, in such a conventional sealing structure, after the semiconductor device 5 is mounted on the substrate 1, the concave cap 8 is placed on the substrate 1 for airtight sealing, so there is a problem in that an extra sealing process is required. be. Instead of cap sealing, there is also a method of sealing the entire semiconductor device with a resin having high thixotropy by a dropping method, but this method also has the problem of requiring an extra sealing step like the above method.
【０００９】本発明は、上記問題点に鑑みなされたもの
で、その目的とするところは、キャップ封止または滴下
法による樹脂封止工程を必要せず、しかも、接合部にお
ける接合信頼性の向上が図れる半導体装置の実装方法を
提供することにある。The present invention was made in view of the above-mentioned problems, and its purpose is to eliminate the need for a resin sealing process by cap sealing or dripping method, and to improve the bonding reliability at the bonded portion. An object of the present invention is to provide a method for mounting a semiconductor device that can achieve the following.
【００１０】0010
【課題を解決するための手段】上記課題を解決するため
本発明は、表面に導体パターンが形成された基板と半導
体装置とをバンプを介して接合する実装方法において、
前記接合用のバンプを有する基板若しくは半導体装置と
、該半導体装置より広い面積を有する可撓性フィルムと
を用い、先ず、前記半導体装置を可撓性フィルムに接着
剤等を用いて固定、または半導体装置を加熱し直接可撓
性フィルムに熱圧着して固定し、次に、半導体装置に形
成された電極パッドを前記バンプと位置合わせして接触
させ、加圧し、その状態を保持しながら、可撓性フィル
ムの外周部を前記基板に接着固定したことを特徴とする
ものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a mounting method for bonding a semiconductor device to a substrate having a conductive pattern formed on its surface via bumps.
Using a substrate or a semiconductor device having bumps for bonding and a flexible film having a larger area than the semiconductor device, first, the semiconductor device is fixed to the flexible film using an adhesive or the like, or the semiconductor device is The device is heated and fixed by thermocompression bonding directly to the flexible film, and then the electrode pads formed on the semiconductor device are aligned and brought into contact with the bumps, pressure is applied, and while maintaining that state, the flexible film is fixed. It is characterized in that the outer peripheral portion of the flexible film is adhesively fixed to the substrate.
【００１１】[0011]
【作用】本発明によれば、上記方法により半導体装置は
基板と圧接され、電極パッド−バンプ−導体パターン間
で電気的コンタクトが得られるわけであるが、ここで、
可撓性フィルムの作用について説明する。[Operation] According to the present invention, the semiconductor device is brought into pressure contact with the substrate by the above method, and electrical contact is obtained between the electrode pad, the bump, and the conductor pattern.
The function of the flexible film will be explained.
【００１２】用いる可撓性フィルムは、半導体装置を固
着する時はテープ状のものでも良いが、基板に半導体装
置をフェースダウン接合する時は分割された形状であり
、この分割された可撓性フィルムの略中央部に半導体装
置の裏面を固着し、そのフィルム外周部を基板に接着す
るのであるが、これらの接着面には、およそ半導体装置
とバンプの高さ分だけ高低差がある。[0012] The flexible film used may be in the form of a tape when the semiconductor device is fixed, but when the semiconductor device is face-down bonded to the substrate, it is in a divided shape, and this divided flexible film is used. The back side of the semiconductor device is fixed to the approximate center of the film, and the outer peripheral part of the film is bonded to the substrate, but there is a difference in height between the bonding surfaces approximately equal to the height of the semiconductor device and the bump.
【００１３】可撓性フィルムは、半導体装置周縁で下方
向に折り曲げられ、基板面に到達すると略平面で基板面
と接着される形状である。このとき、可撓性フィルムの
引張テンションにより、半導体装置を下方（基板側）に
押しつけ、半導体装置表面の電極パッドと基板導体上の
バンプ、または半導体装置表面の電極パッド部に形成し
たバンプと、基板上の導体は圧接された状態を保つ。The flexible film has a shape that is bent downward at the periphery of the semiconductor device, and when it reaches the substrate surface, it is adhered to the substrate surface with a substantially flat surface. At this time, the tensile tension of the flexible film pushes the semiconductor device downward (towards the substrate), and the electrode pads on the surface of the semiconductor device and the bumps on the substrate conductor, or the bumps formed on the electrode pads on the surface of the semiconductor device, The conductors on the board remain in pressure contact.
【００１４】可撓性フィルムは耐湿性の良いものを用い
ているので、半導体装置接合と同時に封止も行っている
。[0014] Since the flexible film used has good moisture resistance, the semiconductor device is bonded and sealed at the same time.
【００１５】[0015]
【実施例】実装方法を図１を参照して説明する。図１は
、半導体装置５が接着搭載された可撓性フィルム１０を
基板１と接着し、かつ半導体装置５と基板上導体２をバ
ンプ３を介して接合するための装置（例えばワイヤレス
ボンダー）のヘッド構造を示すもので、ヘッド２０は、
半導体装置５が接着搭載された可撓性フィルム１０を着
脱するための吸着孔２１を有するとともに、加圧、位置
合わせを行う中側ヘッド２２と、半導体装置５が接着搭
載された可撓性フィルム１０の外周部を加圧または加熱
することにより基板１との接着を行う外側ヘッド２３か
らなり、中側ヘッド２２と外側ヘッド２３は、押し込み
量が異なり、外側ヘッド２３の方が大きい。[Embodiment] A mounting method will be explained with reference to FIG. FIG. 1 shows an apparatus (for example, a wireless bonder) for bonding a flexible film 10 on which a semiconductor device 5 is adhesively mounted to a substrate 1 and bonding the semiconductor device 5 and the conductor 2 on the substrate via bumps 3. This shows the head structure, and the head 20 is
A middle head 22 that has suction holes 21 for attaching and detaching the flexible film 10 on which the semiconductor device 5 is adhesively mounted, and performs pressurization and alignment, and a flexible film on which the semiconductor device 5 is adhesively mounted. The inner head 22 and the outer head 23 have different pushing amounts, with the outer head 23 being larger.
【００１６】先ず、中側ヘッド２２で半導体装置５を基
板上導体２とバンプ３を介して圧接した後、外側ヘッド
２３をさらに押し込み、可撓性フィルム１０を折り曲げ
、基板１と密接させて接合させる。このとき、中側ヘッ
ド２２も加圧をかけ続けている。この状態を図１（ｂ）
に示す。First, after the semiconductor device 5 is pressed into contact with the conductor 2 on the substrate through the bumps 3 by the middle head 22, the outer head 23 is further pushed in, the flexible film 10 is bent, and the semiconductor device 5 is brought into close contact with the substrate 1 and bonded. let At this time, the middle head 22 also continues to apply pressure. This state is shown in Figure 1(b).
Shown below.
【００１７】なお、上記実施例では、１台のワイヤレス
ボンダーで、半導体装置５を基板１にバンプ３を介して
ワイヤレス接合するものであるが、外側ヘッド２３を用
いず中側ヘッド２２のみ用いても接合できる。この場合
、半導体装置５と基板上導体２をバンプ３を介して圧接
している状態で、例えば図２に示すようなヘッド２４を
有する装置を用いて、可撓性フィルム１０の外周部を基
板面に平行に押しつければよい。このとき必要であれば
加熱を行う。In the above embodiment, the semiconductor device 5 is wirelessly bonded to the substrate 1 via the bumps 3 using one wireless bonder, but the outer head 23 is not used and only the inner head 22 is used. can also be joined. In this case, while the semiconductor device 5 and the on-board conductor 2 are in pressure contact through the bumps 3, the outer periphery of the flexible film 10 is attached to the board using, for example, a device having a head 24 as shown in FIG. Just press it parallel to the surface. At this time, heating is performed if necessary.
【００１８】接着剤、半田、ガラス、ろう材等、可撓性
フィルム１０と基板１の接着に用いる材料は、基板１上
でも可撓性フィルム１０側でもどちらに付着させてもよ
い。半導体装置５を可撓性フィルム１０に接着する接着
剤等についても同様にどちらに付着させてもよい。The material used to bond the flexible film 10 and the substrate 1, such as adhesive, solder, glass, or brazing material, may be attached either on the substrate 1 or on the flexible film 10 side. Similarly, the adhesive or the like for bonding the semiconductor device 5 to the flexible film 10 may be attached to either side.
【００１９】図３は本発明に係る一実施例方法により実
装された状態を示す断面図で、図において、１はプラス
チック、セラミック等よりなる基板、２は基板１に形成
された導体パターン、３は金属バンプ、５は半導体装置
、６は電極パッドであり、従来と同様に構成されおり、
本実施例では、可撓性フィルム１０を用いて、半導体装
置５が基板１に接着剤１１を介して固定されている。FIG. 3 is a cross-sectional view showing a state in which it is mounted by an embodiment method according to the present invention. In the figure, 1 is a substrate made of plastic, ceramic, etc., 2 is a conductor pattern formed on the substrate 1, and 3 5 is a metal bump, 5 is a semiconductor device, and 6 is an electrode pad, which are configured in the same manner as before.
In this embodiment, a flexible film 10 is used to fix a semiconductor device 5 to a substrate 1 with an adhesive 11 interposed therebetween.
【００２０】ここで、可撓性フィルム１０の材料は、ポ
リイミド、ＢＴレジン、ガラスエポキシ、ポリエステル
等が好ましく、その厚みは約１００〜２００μｍ程度の
ものが好ましい。また、接着剤１１は、エポキシ、アク
リル、シリコン系等の樹脂を用い、できれば収縮性の高
いものが良い。基板１の材料は、プラスチック、セラミ
ックに限定されない。[0020] Here, the material of the flexible film 10 is preferably polyimide, BT resin, glass epoxy, polyester, etc., and the thickness thereof is preferably about 100 to 200 μm. Further, the adhesive 11 is preferably made of epoxy, acrylic, silicone-based resin, etc., and preferably has a high shrinkage property. The material of the substrate 1 is not limited to plastic or ceramic.
【００２１】図４に示す実施例は、可撓性フィルム１０
で半導体装置５が接着搭載された部分の外周部に、銅箔
等の金属１２を貼り付け、この部分と基板１上に形成し
た金属面１３とを半田１４を用いて接続するものである
。The embodiment shown in FIG.
A metal 12 such as copper foil is attached to the outer periphery of the part on which the semiconductor device 5 is adhesively mounted, and this part and the metal surface 13 formed on the substrate 1 are connected using solder 14.
【００２２】図５に示す実施例は、可撓性フィルム１０
で半導体装置５が接着搭載された部分の外周部に、銅箔
等の金属１２を貼り付け、この部分と基板１上に形成し
た金属面１３とをろう材１５により、ろう接するもので
ある。ここで、基板１の材料は、例えばセラミック系の
ものがよいが、特に限定しない。The embodiment shown in FIG.
A metal 12 such as copper foil is attached to the outer periphery of the part on which the semiconductor device 5 is adhesively mounted, and this part and the metal surface 13 formed on the substrate 1 are soldered together using a brazing material 15. Here, the material of the substrate 1 is preferably a ceramic material, for example, but is not particularly limited.
【００２３】図６に示す実施例は、可撓性フィルム１０
で半導体装置５が接着搭載された部分の外周部に、銅箔
等の金属１２を貼り付け、この部分と基板１上に形成し
た金属面１３とをガラス１６により、ガラス封着するも
のである。ここで、基板１の材料がセラミック系の場合
は、基板１上に金属面１３を形成する必要はない。The embodiment shown in FIG.
A metal 12 such as copper foil is attached to the outer periphery of the part on which the semiconductor device 5 is adhesively mounted, and this part and the metal surface 13 formed on the substrate 1 are sealed with glass 16. . Here, if the material of the substrate 1 is ceramic, it is not necessary to form the metal surface 13 on the substrate 1.
【００２４】図７に示す実施例は、可撓性フィルム１０
で半導体装置５が接着搭載された部分の外周部に、銅箔
等の金属１２を貼り付け、この部分と基板１上に形成し
た金属面１３とを熱圧着したねのである。なお、熱圧着
性を向上させるため、可撓性フィルム１０の外周部の銅
箔等の金属１２の上に金メッキ１７を施したもの、また
は金箔１７を貼ったものと、基板１上に形成した金属面
１３の表面を金メッキ等により金材料にして、金−金の
合金接合にしてもよい。ここで、基板１の材料は、例え
ばセラミック系のものがよい。The embodiment shown in FIG.
A metal 12 such as copper foil is attached to the outer periphery of the part on which the semiconductor device 5 is adhesively mounted, and this part and the metal surface 13 formed on the substrate 1 are bonded by thermocompression. In addition, in order to improve thermocompression adhesion, there are cases where gold plating 17 is applied to the metal 12 such as copper foil on the outer periphery of the flexible film 10, or cases where gold foil 17 is pasted, and those formed on the substrate 1. The surface of the metal surface 13 may be made of a gold material by gold plating or the like to form a gold-gold alloy bond. Here, the material of the substrate 1 is preferably a ceramic material, for example.
【００２５】図８に示す実施例は、可撓性フィルム１０
の表面側（半導体装置５を接着する側と反対側）に、銅
箔等の金属材料１８を貼り付け、シールド効果を持たせ
るとともに、放熱性を向上させたものである。なお、シ
ールド効果を持たせるため、上記金属材料１８と、基板
１上の導体パターン２の内、アース（接地）に用いる導
体２とは、電気的に接続しておく必要がある。The embodiment shown in FIG.
A metal material 18 such as copper foil is attached to the surface side (the side opposite to the side to which the semiconductor device 5 is bonded) to provide a shielding effect and improve heat dissipation. Note that, in order to provide a shielding effect, the metal material 18 and the conductor 2 used for earthing (grounding) in the conductor pattern 2 on the substrate 1 must be electrically connected.
【００２６】なお、半導体装置５が接着搭載する可撓性
フィルム１０をキャリアテープ状のものにすれば、同時
に接合、封止が行えることに加え、さらに量産効果の向
上が図れる。If the flexible film 10 on which the semiconductor device 5 is adhesively mounted is made into a carrier tape-like material, bonding and sealing can be performed at the same time, and mass production efficiency can be further improved.
【００２７】[0027]
【発明の効果】本発明は上記のように、半導体装置と基
板との電気的コンタクトが加圧接触による圧接であるた
め、半導体装置と基板との熱膨張差を吸収でき、接合信
頼性が向上する。これは、熱的応力が加わると、基板導
体上のバンプと半導体装置の電極パッド、または半導体
装置電極パッド上のバンプと基板導体上との接続点が摺
動することによる。従って、大型の半導体装置の基板実
装に特に有効である。[Effects of the Invention] As described above, in the present invention, since the electrical contact between the semiconductor device and the substrate is made by pressure contact, the difference in thermal expansion between the semiconductor device and the substrate can be absorbed, and the bonding reliability is improved. do. This is because when thermal stress is applied, the bump on the substrate conductor and the electrode pad of the semiconductor device, or the connection point between the bump on the semiconductor device electrode pad and the substrate conductor slide. Therefore, it is particularly effective for mounting large-sized semiconductor devices on boards.
【００２８】また、半導体装置の基板への接合と封止が
同時に可能であり、キャップ封止または滴下法による樹
脂封止の工程を省略できる。封止に用いる可撓性フィル
ムの厚みは約１００〜２００μｍと非常に薄いため、半
導体装置の実装高さを低くすることが可能となり、薄型
化が図れる。Furthermore, the semiconductor device can be bonded to the substrate and sealed at the same time, and the step of resin sealing by cap sealing or dropping method can be omitted. Since the thickness of the flexible film used for sealing is very thin, about 100 to 200 μm, it is possible to reduce the mounting height of the semiconductor device, thereby making it possible to reduce the thickness of the semiconductor device.
【図１】本発明の一実施例を示す工程断面図である。FIG. 1 is a process sectional view showing an embodiment of the present invention.
【図２】本発明の異なる実施例に用いるヘッド部分の上
面図である。FIG. 2 is a top view of a head portion used in different embodiments of the invention.
【図３】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 3 is a sectional view showing a state implemented by an embodiment method according to the present invention.
【図４】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 4 is a sectional view showing a state implemented by an embodiment method according to the present invention.
【図５】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 5 is a sectional view showing a state implemented by an embodiment method according to the present invention.
【図６】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 6 is a sectional view showing a state implemented by an embodiment method according to the present invention.
【図７】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 7 is a cross-sectional view showing a state implemented by an embodiment method according to the present invention.
【図８】本発明に係る実施例方法により実装された状態
を示す断面図である。FIG. 8 is a sectional view showing a state implemented by an embodiment method according to the present invention.
【図９】従来方法により実装された状態を示す断面図で
ある。FIG. 9 is a sectional view showing a state where the device is mounted using a conventional method.
【図１０】従来方法により実装された状態を示す断面図
である。FIG. 10 is a sectional view showing a state where the device is mounted using a conventional method.
【図１１】従来方法により実装された状態を示す断面図
である。FIG. 11 is a cross-sectional view showing a state where the device is mounted using a conventional method.
１ 基板 ２ 導体パターン ３ 金属バンプ ４ 封止樹脂 ５ 半導体装置 ６ 電極パッド １０ 可撓性フィルム １１ 接着剤 1 Board 2 Conductor pattern 3 Metal bump 4 Sealing resin 5 Semiconductor device 6 Electrode pad 10 Flexible film 11 Adhesive
Claims (1)
と半導体装置とをバンプを介して接合する実装方法にお
いて、前記接合用のバンプを有する基板若しくは半導体
装置と、該半導体装置より広い面積を有する可撓性フィ
ルムとを用い、先ず、前記半導体装置を前記可撓性フィ
ルムに固着し、次に、半導体装置に形成された電極パッ
ドを前記バンプと位置合わせして接触させ、加圧し、そ
の状態を保持しながら、可撓性フィルムの外周部を前記
基板に接着固定したことを特徴とする半導体装置の実装
方法。1. A mounting method in which a substrate having a conductor pattern formed on its surface and a semiconductor device are bonded via bumps, comprising: a substrate or a semiconductor device having bonding bumps, and a substrate having a larger area than the semiconductor device; First, the semiconductor device is fixed to the flexible film using a flexible film, and then the electrode pads formed on the semiconductor device are aligned and brought into contact with the bumps, and pressure is applied. A method for mounting a semiconductor device, characterized in that an outer peripheral portion of a flexible film is adhesively fixed to the substrate while holding the flexible film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3060023A JP2817425B2 (en) | 1991-03-25 | 1991-03-25 | Semiconductor device mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3060023A JP2817425B2 (en) | 1991-03-25 | 1991-03-25 | Semiconductor device mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04369846A true JPH04369846A (en) | 1992-12-22 |
| JP2817425B2 JP2817425B2 (en) | 1998-10-30 |
Family
ID=13130058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3060023A Expired - Lifetime JP2817425B2 (en) | 1991-03-25 | 1991-03-25 | Semiconductor device mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2817425B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330352A (en) * | 1995-05-31 | 1996-12-13 | Nec Corp | Semiconductor device |
| JP2001176995A (en) * | 1999-10-15 | 2001-06-29 | Thomson Csf | Electronic component packaging method |
-
1991
- 1991-03-25 JP JP3060023A patent/JP2817425B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330352A (en) * | 1995-05-31 | 1996-12-13 | Nec Corp | Semiconductor device |
| JP2001176995A (en) * | 1999-10-15 | 2001-06-29 | Thomson Csf | Electronic component packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2817425B2 (en) | 1998-10-30 |
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