JPH0437009B2 - - Google Patents
Info
- Publication number
- JPH0437009B2 JPH0437009B2 JP160688A JP160688A JPH0437009B2 JP H0437009 B2 JPH0437009 B2 JP H0437009B2 JP 160688 A JP160688 A JP 160688A JP 160688 A JP160688 A JP 160688A JP H0437009 B2 JPH0437009 B2 JP H0437009B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- interplanar spacing
- hkl
- oxide
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 229910052596 spinel Inorganic materials 0.000 claims description 8
- 239000011029 spinel Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000003786 synthesis reaction Methods 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 11
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 11
- 150000001450 anions Chemical class 0.000 description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 150000001768 cations Chemical class 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000634 powder X-ray diffraction Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Compounds Of Iron (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
産業上の利用分野
本発明は新規化合物である一般式InABMnO5
(AはFe,GaあるいはCrを、BはMg,Co,Ni
あるいはZnを表わす)で示される立方晶系のス
ピネル型構造を有する化合物およびその製造法に
関する。この新規化合物は陰イオン導電体、半導
体材料、触媒材料として有用なものである。
従来技術
従来立方晶系のスピネル型構造を有する化合物
としては、(1)一般式IABM224(Aは2価陽イオ
ン,Bは3価陽イオンを表わす)で示される定比
組成の化合物、(2)γ−Fe2O3、Ti3CO2O8,
Ti4CO4O12で示される陽イオン欠陥を持つ化合物
が知られている。
これらの化合物は陽イオン数と陰イオン数との
割合が3対4、2対3あるいは5対8のものであ
つた。
発明の目的
本発明は従来の立方晶系のスピネル型構造を有
する化合物の陽イオン数と陰イオン数の割合とは
異なつた4対5の割合である陰イオン欠陥(酸素
イオン欠陥)を有する立方晶系のスピネル型構造
を有する化合物を提供するにある。
発明の構成
本発明の新規化合物は、一般式InABMnO5(A
はFe,GaあるいはCrを、BはMg,Co,Niある
いはZnを表わす)で示される立方晶系のスピネ
ル型構造を持つ化合物で、陽イオン数と陰イオン
数との割合が4対5である。
この陽イオン数と陰イオン数との割合は、従来
知られている定比組成の3対4、あるいは陽イオ
ン欠陥スピネル型構造の組成の2対3から大幅に
ずれている陰イオン欠陥を有する化合物である。
これらの化合物の格子定数(a(Å))の値は次
の表−Aに示す通りである。
Industrial Application Field The present invention is a novel compound with the general formula InABMnO 5
(A is Fe, Ga or Cr, B is Mg, Co, Ni
The present invention relates to a compound having a cubic spinel structure represented by (or Zn) and a method for producing the same. This new compound is useful as an anionic conductor, semiconductor material, and catalytic material. Prior Art Conventional compounds having a cubic spinel structure include (1) compounds with a stoichiometric composition represented by the general formula IABM 224 (A represents a divalent cation and B represents a trivalent cation); 2) γ-Fe 2 O 3 , Ti 3 CO 2 O 8 ,
Compounds with cation defects represented by Ti 4 CO 4 O 12 are known. These compounds had a ratio of cations to anions of 3:4, 2:3 or 5:8. Purpose of the Invention The present invention provides a cubic system having anion defects (oxygen ion defects) in a ratio of 4 to 5, which is different from the ratio of the number of cations to the number of anions in conventional compounds having a cubic spinel structure. An object of the present invention is to provide a compound having a crystalline spinel structure. Structure of the Invention The novel compound of the present invention has the general formula InABMnO 5 (A
is Fe, Ga, or Cr, and B is Mg, Co, Ni, or Zn), and has a cubic spinel structure with a ratio of cations to anions of 4:5. be. This ratio of the number of cations to the number of anions is significantly different from the conventionally known stoichiometric composition of 3:4, or the composition of the cation-deficient spinel structure of 2:3. It is a compound. The values of the lattice constants (a (Å)) of these compounds are shown in Table A below.
【表】
これらの化合物が陰イオン欠陥であることは、
陰イオン欠陥状態であると仮定して、上述の格子
定数から得られる密度とアルキメデス法による実
測値とがよく一致している(表−A参照)ことか
ら結論づけられる。
これらの化合物の面指数(hkl)、面間隔(d
(Å))、do(Å)は実測値、dc(Å)は計算値を示
す)、およびX線に対する相対反射強度(I(%))
を示すと、表−1〜12(前記化学組成の番号1〜
12に対応)に示す通りである。
これらの化合物はいずれも酸素イオン導電体、
半導体材料、触媒材料として有用である。Feを
含有する化合物の場合は前記のほか、磁性材料と
しても使用し得られる。[Table] The fact that these compounds have anion defects means that
Assuming an anion defect state, it is concluded that the density obtained from the above-mentioned lattice constant and the actual value measured by the Archimedes method are in good agreement (see Table A). Planar index (hkl) and interplanar spacing (d
(Å)), do (Å) is the measured value, dc (Å) is the calculated value), and relative reflection intensity for X-rays (I (%))
Tables 1 to 12 (numbers 1 to 1 of the above chemical composition)
12). All of these compounds are oxygen ion conductors,
It is useful as a semiconductor material and a catalyst material. In the case of a compound containing Fe, in addition to the above, it can also be used as a magnetic material.
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】
これらの化合物は次の方法によつて製造し得ら
れる。
一般式InABMnO5(AはFe,GaあるいはCrを、
BはMg,Co,NiあるいはZnを表わす)で示さ
れる化合物の組成金属であるIn,A,B,Mnの
金属あるいは金属酸化物もしくは加熱により金属
酸化物に分解される化合物を、In,A,B,Mn
の割合が原子比で1対1対1対1になるように混
合し、この混合物を1200℃以上の温度で、In,A
が各々3価イオン状態、B,Mnが各々2価イオ
ン状態を維持する雰囲気の下で加熱することによ
つて製造し得られる。
本発明に用いる出発物質は市販のものをそのま
ま使用してもよいが、出発物質相互間の化学反応
を速やかに進行させるために粒径が小さい程よ
く、特に10μm以下であることが望ましい。また
陰イオン導電体、半導体材料、触媒材料等として
用いる場合には不純物の混入をきらうので、出発
物質の純度は高いほど好ましい。加熱により金属
酸化物に分解される化合物としては、それぞれの
金属の水酸化物、炭酸塩、硝酸塩等が挙げられ
る。
これらの原料はそのままあるいはアルコールま
たはアセトンと共に充分混合する。原料の混合割
合はIn,A,B,Mn(A,Bは前記と同じ)が原
子比で1対1対1対1の割合である。この割合を
はずすと目的とする化合物の単一相のものを得る
ことができない。
この混合物をIn,Aが各々33価イオン状態、
B,Mnが各々2価イオン状態を維持する雰囲気
の下で1200℃以上に加熱する。加熱時間は数時間
以上である。加熱後は0℃に急冷するかあるいは
大気中に急速に引き出せばよい。
実施例 1
InFeMgMnO5の合成
純度99.99%以上の酸化インジウム(In2O3)粉
末、純度99.99%以上の酸化鉄(Fe2O2)粉末、純
度99.9%以上の酸化マグネシウム(MgO)粉末
および純度99.9%以上の酸化マンガン(MnO)
粉末を、モル比で1対1対2対2の割合に秤量
し、これらの粉末をめのう乳鉢内でエタノールを
加えて約30分間混合し平均粒径数μmの微粉状混
合を得た。この混合物を白金管内に封入し、1450
℃に設定された管状シリコニツト炉内に入れ4日
間加熱した後、試料を炉外に取出し室温まで急冷
した。得られた試料はInFeMgMnO5の単一相の
ものであつた。これを粉末X線回折法によつて面
指数(hkl)、面間隔(do(Å))およびX線に対
する相対反射強度(I(%))を測定し結果は表−
1に示す通りであつた。立方晶系としての格子定
数は
a=8.603±0.001(Å)であつた。
上記の格子定数および表−1の面指数(hkl)
より算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 2
InFeCoMnO5の合成
実施例1における酸化マグネシウム粉末に代え
酸化コバルト(CoO)を用いた他は実施例1と同
様にして試料を得た。この試料はInFeCoMnO5
単一相のものであつた。これを粉末X線回折法に
よつて面指数(hkl)、面間隔(do(Å))および
X線に対する相対反射強度(I(%))を測定した
結果は表−2に示す通りであつた。立方晶系とし
ての格子定数は、
a=8.625±0.001(Å)であつた。
上記の格子定数および表−2の面指数(hkl)
より算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 3
InFeNiMnO5の合成
実施例1における酸化マグネシウム粉末に代え
酸化ニツケル(NiO)粉末を用いた他の実施例1
と同様にして試料を得た。この試料は
InFeNiMnO5単一相のものであつた。これを粉
末X線回折方法によつて面指数(hkl)、面間隔
(do(Å))およびX線に対する相対反射強度(I
(%))を測定した結果は表−3に示す通りであつ
た。立方晶系としての格子定数は、
a=8.604±0.001(Å)であつた。
上記の格子定数および表−3の面指数(hkl)
より算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 4
InFeZnMnO5の合成
実施例1における酸化マグネシウム粉末に代え
酸化亜鉛(ZnO)粉末を用いた他は実施例1と同
様にして試料を得た。この試料はInFeZnMnO5単
一相のものであつた。これを粉末X線回折法によ
つて面指数(hkl)、面間隔(do(Å))およびX
線に対する相対反射強度(I(%))を測定した結
果は表−4に示す通りであつた。立方晶系として
の格子定数は
a=8.661±0.001であつた。
上記の格子定数および表−4の面指数(hkl)
より算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 5
InGaMgMnO5の合成
純度99.99%以上の酸化インジウム(In2O3)粉
末、純度99.99%以上の酸化ガリウム(Ga2O3)
粉末、純度99.9%以上の酸化マグネシウム
(MgO)粉末および純度99.9%以上の酸化マンガ
ン(MgO)粉末を、モル比で1対1対2対2の
割合に秤量し、これら粉末をめのう乳鉢内でエタ
ノールを加えて約30分間混合し、平均粒径数μm
の微粉状混合物を得た。この混合物を白金管内に
封入し、1450℃に設定した管状シリコニツト炉内
に入れ4日間加熱した後、試料を炉外に取出し室
温まで急冷した。得られた試料はInGaMgMnO5
単一相のものであつた。これを粉末X線回折方法
によつて面指数(hkl)、面間隔(do(Å))およ
びX線に対する相対反射強度(I(%))を測定し
た結果は表−5に示す通りであつた。立方晶系と
して格子定数は、
a=8.562±0.001(Å)であつた。
上記の格子定数および表−5の面指数(hkl)
より算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 6〜8
(6) InGaCoMnO5の合成
(7) InGaNiMnO5の合成
(8) InGaZnMnO5の合成
実施例5における酸化マグネシウム粉末に代
え、酸化コバルト(6)、酸化ニツケル(7)、酸化亜鉛
(8)、の粉末を用いた他の実施例5と同様にしてそ
れぞれ試料を得た。得られた試料はそれぞれ、
InGaCoMnO5,InGaNiMnO5,InGaZnMnO5の
単一相のものであつた。これらを粉末X線回折方
法によつて面指数(hkl)、面間隔(do(Å))お
よびX線に対する相対反射強度(I(%))を測定
した結果は、それぞれ表−6、表−7,表−8に
示す通りであつた。立方晶系としての格子定数
は、それぞれ
a=8.597±0.001 (Å) ……(6)
a=8.558±0.001 (Å) ……(7)
a=8.591±0.001 (Å) ……(8)
上記の格子定数および各表の面指数(hkl)よ
り算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
実施例 9
InGrMgMnO5の合成
純度99.99%以上の酸化インジウム(In2O3)粉
末、純度99.99%以上の酸化クロム(Cr2O3)粉
末、純度99.9%以上の酸化マグネシウム(MgO)
および純度99.9%の酸化マンガン(MnO)粉末
を、モル比で1対1対2対2の割合に秤量し、こ
れら粉末をめのう乳鉢内でエタノールを加えて30
分間混合し、平均粒径数μmの微粉状混合物を得
た。この混合物を白金管内に封入し、1450℃に設
定された管状シリコニツト炉内に入れ、4日間加
熱した後、試料を炉外に取出し室温まで急冷し。
得られた試料はInCrMgMnO5単一相のものであ
つた。これを粉末X線回折方法によつて面指数
(hkl)、面間隔(do(Å))およびX線に対する相
対反射強度(I(%))を測定した結果は表−9に
示す通りであつた。立方晶系としての格子定数は
a=8.561±0.001 (Å)であつた。
上記の格子定数および表−9に示す面指数
(hkl)より算出した面間隔(dc(Å))は実測の
面間隔(do(Å))と極めてよい一致を示した。
実施例 10〜12
(10) InCrCoMnO5の合成
(11) InCrMiMnO5の合成
(12) InCrZnMnO5の合成
実施例9における酸化マグネシウム粉末に代え
酸化コバルト(10)、酸化ニツケル(11)、酸化亜鉛(12)の
粉末を用いた他の実施例9と同様にしてそれぞれ
試料を得た。得られた試料はそれぞれ、
InCrCoMnO5,InCrNiMnO5,InCrZnMnO5の単
一相のものであつた。これらを粉末X線回折法に
よつて面指数(hkl)、面間隔(do(Å))および
X線に対する相対反射強度(I(%))を測定した
結果はそれぞれ表−10、表−11,表−12に示す通
りであつた。
立方晶系としての格子定数はそれぞれ
a=8.586±0.001 (Å) ……(10)
a=8.570±0.001 (Å) ……(11)
a=8.602±0.001 (Å) ……(12)
であつた。
上記の格子定数および各表の面指数(hkl)よ
り算出した面間隔(dc(Å))は実測の面間隔
(do(Å))と極めてよい一致を示した。
発明の効果
本発明は陰イオン導電体、半導体材料、触媒材
料、磁性材料として有用な陰イオン欠陥を有する
新規な立方晶系のスピネル型構造を有する化合物
を提供し得たものである。[Table] These compounds can be produced by the following method. General formula InABMnO 5 (A is Fe, Ga or Cr,
B represents Mg, Co, Ni or Zn) The metals or metal oxides of In, A, B, Mn, or compounds that are decomposed into metal oxides by heating, are ,B,Mn
In, A and A are mixed in an atomic ratio of 1:1:1:1, and this mixture is heated at a temperature of 1200°C or higher to form In,A.
It can be produced by heating under an atmosphere in which B and Mn each maintain a trivalent ion state, and B and Mn each maintain a divalent ion state. Commercially available starting materials used in the present invention may be used as they are, but in order to allow the chemical reaction between the starting materials to proceed quickly, the smaller the particle size, the better, and it is particularly desirable that the particle size is 10 μm or less. Furthermore, when using the material as an anion conductor, a semiconductor material, a catalyst material, etc., the purity of the starting material is preferably as high as possible since contamination with impurities is avoided. Examples of compounds that are decomposed into metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals. These raw materials may be thoroughly mixed as is or with alcohol or acetone. The mixing ratio of the raw materials is In, A, B, and Mn (A and B are the same as above) in an atomic ratio of 1:1:1:1. If this ratio is exceeded, the target compound cannot be obtained in a single phase. In this mixture, In and A are each in a 33-valent ion state,
Heat to 1200° C. or higher in an atmosphere where B and Mn each maintain a divalent ion state. The heating time is several hours or more. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. Example 1 Synthesis of InFeMgMnO 5 Indium oxide (In 2 O 3 ) powder with a purity of 99.99% or more, iron oxide (Fe 2 O 2 ) powder with a purity of 99.99% or more, magnesium oxide (MgO) powder with a purity of 99.9% or more, and purity More than 99.9% manganese oxide (MnO)
The powders were weighed in a molar ratio of 1:1:2:2, and ethanol was added to these powders in an agate mortar and mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. This mixture was sealed in a platinum tube and 1450
After being placed in a tubular siliconite furnace set at .degree. C. and heated for 4 days, the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample had a single phase of InFeMgMnO 5 . The planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays were measured using powder X-ray diffraction method, and the results are shown in Table-
It was as shown in 1. The lattice constant as a cubic system was a=8.603±0.001 (Å). The above lattice constants and the surface index (hkl) in Table-1
The calculated interplanar spacing (dc (Å)) showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Example 2 Synthesis of InFeCoMnO 5 A sample was obtained in the same manner as in Example 1 except that cobalt oxide (CoO) was used in place of the magnesium oxide powder in Example 1. This sample is InFeCoMnO 5
It was of a single phase. The planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays were measured using powder X-ray diffraction, and the results are shown in Table 2. Ta. The lattice constant as a cubic system was a=8.625±0.001 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (dc (Å)) showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Example 3 Synthesis of InFeNiMnO 5 Another example 1 using nickel oxide (NiO) powder instead of magnesium oxide powder in Example 1
A sample was obtained in the same manner. This sample is
It was of a single phase of InFeNiMnO5 . The surface index (hkl), interplanar spacing (do (Å)), and relative reflection intensity for X-rays (I
(%)) The results were as shown in Table 3. The lattice constant as a cubic system was a=8.604±0.001 (Å). The above lattice constants and the surface index (hkl) in Table 3
The calculated interplanar spacing (dc (Å)) showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Example 4 Synthesis of InFeZnMnO 5 A sample was obtained in the same manner as in Example 1, except that zinc oxide (ZnO) powder was used in place of the magnesium oxide powder in Example 1. This sample was of a single phase of InFeZnMnO5 . The planar index (hkl), interplanar spacing (do (Å)), and
The results of measuring the relative reflection intensity (I (%)) with respect to the line were as shown in Table 4. The lattice constant as a cubic system was a=8.661±0.001. The above lattice constants and the surface index (hkl) in Table 4
The calculated interplanar spacing (dc (Å)) showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Example 5 Synthesis of InGaMgMnO 5 Indium oxide (In 2 O 3 ) powder with a purity of 99.99% or more, gallium oxide (Ga 2 O 3 ) with a purity of 99.99% or more
Magnesium oxide (MgO) powder with a purity of 99.9% or more and manganese oxide (MgO) powder with a purity of 99.9% or more are weighed in a molar ratio of 1:1:2:2, and these powders are placed in an agate mortar. Add ethanol and mix for about 30 minutes until the average particle size is several μm.
A fine powder mixture was obtained. This mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample is InGaMgMnO 5
It was of a single phase. The planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays were measured using the powder X-ray diffraction method, and the results are shown in Table 5. Ta. As a cubic system, the lattice constant was a=8.562±0.001 (Å). The above lattice constants and the surface index (hkl) in Table-5
The calculated interplanar spacing (dc (Å)) showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Examples 6 to 8 (6) Synthesis of InGaCoMnO 5 (7) Synthesis of InGaNiMnO 5 (8) Synthesis of InGaZnMnO 5 Instead of magnesium oxide powder in Example 5, cobalt oxide (6), nickel oxide (7), zinc oxide
Samples were obtained in the same manner as in Example 5 using the powder of (8). Each sample obtained was
It had a single phase of InGaCoMnO 5 , InGaNiMnO 5 , and InGaZnMnO 5 . The planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays were measured using the powder X-ray diffraction method, and the results are shown in Table 6 and Table 2, respectively. 7. It was as shown in Table-8. The lattice constants for the cubic system are a=8.597±0.001 (Å) ……(6) a=8.558±0.001 (Å) ……(7) a=8.591±0.001 (Å) ……(8) Above The interplanar spacing (dc (Å)) calculated from the lattice constant and the planar index (hkl) in each table showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Example 9 Synthesis of InGrMgMnO 5 Indium oxide (In 2 O 3 ) powder with a purity of 99.99% or more, chromium oxide (Cr 2 O 3 ) powder with a purity of 99.99% or more, magnesium oxide (MgO) with a purity of 99.9% or more
and manganese oxide (MnO) powder with a purity of 99.9% were weighed in a molar ratio of 1:1:2:2, and these powders were mixed with ethanol in an agate mortar for 30 minutes.
The mixture was mixed for a minute to obtain a fine powder mixture with an average particle size of several μm. This mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature.
The obtained sample was of a single phase of InCrMgMnO5 . The planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays were measured using the powder X-ray diffraction method, and the results are shown in Table 9. Ta. The lattice constant as a cubic system was a=8.561±0.001 (Å). The interplanar spacing (dc (Å)) calculated from the above lattice constant and the planar index (hkl) shown in Table 9 was in excellent agreement with the actually measured interplanar spacing (do (Å)). Examples 10 to 12 (10) Synthesis of InCrCoMnO 5 (11) Synthesis of InCrMiMnO 5 (12) Synthesis of InCrZnMnO 5 Cobalt oxide (10), nickel oxide (11), zinc oxide ( Samples were obtained in the same manner as in Example 9 using the powder of 12). Each sample obtained was
It had a single phase of InCrCoMnO 5 , InCrNiMnO 5 , and InCrZnMnO 5 . Table 10 and Table 11 show the results of measuring the planar index (hkl), interplanar spacing (do (Å)), and relative reflection intensity (I (%)) for X-rays using powder X-ray diffraction method. , as shown in Table-12. The lattice constants for the cubic system are a=8.586±0.001 (Å) ……(10) a=8.570±0.001 (Å) ……(11) a=8.602±0.001 (Å) ……(12) Ta. The interplanar spacing (dc (Å)) calculated from the above lattice constant and the planar index (hkl) in each table showed extremely good agreement with the actually measured interplanar spacing (do (Å)). Effects of the Invention The present invention has provided a compound having a novel cubic spinel structure having an anion defect and useful as an anion conductor, a semiconductor material, a catalyst material, and a magnetic material.
Claims (1)
を、BはMg,Co,NiあるいはZnを表わす)で
示される立方晶系のスピネル型構造を有する化合
物。 2 一般式InABMnO5(AはFe,GaあるいはCr
を、BはMg,Co,NiあるいはZnを表わす)で
示される化合物の組成金属であるIn,A,B,
Mnの金属あるいは金属酸化物もしくは加熱によ
り金属酸化物に分解される化合物を、In,A,
B,Mnの割合が原子比で1対1対1対1になる
ように混合し、この混合物を1200℃以上の温度
で、In,Aが各々3価イオン状態、B,Mnが
各々2価イオン状態を維持する雰囲気の下で加熱
することを特徴とする一般式InABMnO5(A,B
はそれぞれ前記と同じものを表わす)で示される
立方晶系のスピネル型構造を有する化合物の製造
法。[Claims] 1 General formula InABMnO 5 (A is Fe, Ga or Cr
, B represents Mg, Co, Ni, or Zn) and has a cubic spinel structure. 2 General formula InABMnO 5 (A is Fe, Ga or Cr
, B represents Mg, Co, Ni or Zn).
In, A,
B and Mn are mixed in an atomic ratio of 1:1:1:1, and this mixture is heated to a temperature of 1200°C or higher, so that In and A are each in a trivalent ion state, and B and Mn are each in a divalent state. The general formula InABMnO 5 (A, B
each represents the same thing as above).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP160688A JPH01179729A (en) | 1988-01-07 | 1988-01-07 | A compound having a cubic spinel structure represented by the general formula InABMnO↓5 (A represents Fe, Ga or Cr, B represents Mg, Co, Ni or Zn) and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP160688A JPH01179729A (en) | 1988-01-07 | 1988-01-07 | A compound having a cubic spinel structure represented by the general formula InABMnO↓5 (A represents Fe, Ga or Cr, B represents Mg, Co, Ni or Zn) and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01179729A JPH01179729A (en) | 1989-07-17 |
| JPH0437009B2 true JPH0437009B2 (en) | 1992-06-18 |
Family
ID=11506159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP160688A Granted JPH01179729A (en) | 1988-01-07 | 1988-01-07 | A compound having a cubic spinel structure represented by the general formula InABMnO↓5 (A represents Fe, Ga or Cr, B represents Mg, Co, Ni or Zn) and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179729A (en) |
-
1988
- 1988-01-07 JP JP160688A patent/JPH01179729A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01179729A (en) | 1989-07-17 |
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