JPH04372111A - Projection aligner - Google Patents

Projection aligner

Info

Publication number
JPH04372111A
JPH04372111A JP3150254A JP15025491A JPH04372111A JP H04372111 A JPH04372111 A JP H04372111A JP 3150254 A JP3150254 A JP 3150254A JP 15025491 A JP15025491 A JP 15025491A JP H04372111 A JPH04372111 A JP H04372111A
Authority
JP
Japan
Prior art keywords
light
mask
substrate
mask pattern
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3150254A
Other languages
Japanese (ja)
Inventor
Junichi Kanbe
神戸 淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3150254A priority Critical patent/JPH04372111A/en
Publication of JPH04372111A publication Critical patent/JPH04372111A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent an exposure plane from coming wide out of a focal plane in the case of projection exposure of mask patterns onto a substrate having stepped surfaces with a plurality of levels. CONSTITUTION:A transmit/shield mask 2 is mounted at a position optically conjugated with a mask pattern 4. The transmit/shield mask 2 has a light transmitting area in the area corresponding to a projection on the substrate 6 and a light shielding area in the area corresponding to a recess on the substrate. A mask pattern 4 is irradiated with light from a light source 11 via the transmit/shield mask. A pattern of the mask pattern 4 is transferred only to a projection on the substrate 6. Next, the transmit/shield mask 2 is exchanged, and a pattern of the mask pattern 4 is transferred only to a recess on the substrate 6. Therefore, setting a focus optimally at every time of transfer allows no exposure planes to come wide out of a focal plane.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、複数の高さの段差表
面を有する基板上にマスクパターンを転写する投影露光
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for transferring a mask pattern onto a substrate having a step surface having a plurality of heights.

【0002】0002

【従来の技術】近年、投影露光装置の高NA化,短波長
化,さらに半導体装置の高集積化に伴う基板の高段差化
により基板上のレジストを露光する際の焦点深度の余裕
がなくなってきた。この焦点深度の余裕を拡大するため
の技術は、例えば特開昭63−42122に開示されて
いる。この技術は、基板上に塗布されたレジスト中の複
数点に結像点を合わせ、複数回露光することによりレジ
ストパターンを形成するものである。
[Background Art] In recent years, projection exposure equipment has become higher in NA and wavelength has become shorter, and the height difference in substrates has become higher due to the higher integration of semiconductor devices, so there is no margin for depth of focus when exposing a resist on a substrate. Ta. A technique for increasing the depth of focus margin is disclosed in, for example, Japanese Patent Laid-Open No. 63-42122. In this technique, a resist pattern is formed by aligning an imaging point with multiple points in a resist coated on a substrate and exposing the resist multiple times.

【0003】0003

【発明が解決しようとする課題】従来の露光方法は、レ
ジスト中の一点に結像点を合わせ、一回露光するか、特
開昭63−42122に示されているように、レジスト
中の複数点に結像点を合わせ、複数回露光する方法があ
るが、いずれの方法もマスクパターン全面を一度に基板
上に転写するため、段差のある基板上にマスクパターン
を転写する場合、必ず焦点面から大きくはずれる露光面
があるという問題点があった。
[Problems to be Solved by the Invention] Conventional exposure methods focus on one point in the resist and expose once, or as shown in Japanese Patent Laid-Open No. 63-42122, multiple exposures in the resist are performed. There is a method of aligning the imaging point with a dot and exposing the light multiple times, but both methods transfer the entire mask pattern onto the substrate at once, so when transferring the mask pattern onto a substrate with steps, the focal plane must be There was a problem in that there was an exposed surface that deviated significantly from the exposure surface.

【0004】この発明は上記のような問題点を解決する
ためになされたもので、複数の高さの段差表面を有する
基板上にマスクパターンを転写する場合、露光面が焦点
面から大きくはずれることがない投影露光装置を得るこ
とを目的とする。
[0004] This invention was made to solve the above-mentioned problems, and when a mask pattern is transferred onto a substrate having a step surface with a plurality of heights, the exposed surface may deviate greatly from the focal plane. The purpose is to obtain a projection exposure apparatus free of

【0005】[0005]

【課題を解決するための手段】この発明に係る投影露光
装置は、複数の高さの段差表面を有する基板上にマスク
パターンを転写する投影露光装置において、前記段差表
面の前記高さに応じた透光部および遮光部を有し、前記
マスクパターンに対して光学的に共役な位置に設置され
た透遮光マスクを備え、前記透遮光マスクを交換しつつ
前記マスクパターンを前記基板上に複数回に分けて転写
するようにしたことを特徴とする。
[Means for Solving the Problems] A projection exposure apparatus according to the present invention is a projection exposure apparatus that transfers a mask pattern onto a substrate having a step surface having a plurality of heights. A light-transmitting mask having a light-transmitting part and a light-blocking part and installed at a position optically conjugate to the mask pattern is provided, and the mask pattern is applied to the substrate multiple times while the light-transmitting mask is replaced. The feature is that the image is transcribed separately.

【0006】[0006]

【作用】この発明においては、段差表面の高さに応じた
透光部および遮光部を有し、マスクパターンに対して光
学的に共役な位置に設置された透遮光マスクを備え、透
遮光マスクを交換しつつマスクパターンを基板上に複数
回に分けて転写するようにしたので、段差表面の各々の
高さに応じて焦点を合わせることができる。
[Operation] This invention includes a light-transmitting mask and a light-shielding mask that have a light-transmitting part and a light-blocking part depending on the height of the step surface and are installed at a position optically conjugate with respect to the mask pattern. Since the mask pattern is transferred onto the substrate in multiple steps while exchanging the mask pattern, the focus can be adjusted according to the height of each step surface.

【0007】[0007]

【実施例】図1はこの発明に係る投影露光装置の構成を
示す構成図である。図において、1は光源、2は透遮光
マスク、3および5は投影レンズ、4はマスクパターン
、6は基板である。透遮光マスク2はマスクパターン4
に対して光学的に共役な位置に設置されている。基板6
もマスクパターン4に対して光学的に共役な位置に設置
されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram showing the structure of a projection exposure apparatus according to the present invention. In the figure, 1 is a light source, 2 is a light transmitting mask, 3 and 5 are projection lenses, 4 is a mask pattern, and 6 is a substrate. Transmissive light mask 2 has mask pattern 4
It is placed at a position optically conjugate to. Board 6
is also placed at a position optically conjugate with respect to the mask pattern 4.

【0008】図2は透遮光マスク2の平面図、図3はマ
スクパターン4の平面図、図4は基板6の平面図である
。透遮光マスク2はマスクパターン4に対して光学的に
共役な位置に設置されている。基板6もマスクパターン
4に対して光学的に共役な位置に設置されている。図5
は図4のL−L線での断面図である。図5においてAは
凸部、Bは凹部である。図2において、A1は基板6上
の凸部Aに対応して設けられた透光部、B1は基板6上
の凹部Bに対応して設けられた遮光部である。図3にお
いて、A2は透遮光マスク2の透光部A1を介して光源
1から光が照射される領域、B2は透遮光マスク2の遮
光部B1で光源からの光が遮光される領域である。なお
、凸部Aと領域A2,透光部A1と領域A2,凹部Bと
領域B2,遮光部B1と領域B2は各々光学的に共役で
かつ一対一に対応している。
FIG. 2 is a plan view of the light transmitting mask 2, FIG. 3 is a plan view of the mask pattern 4, and FIG. 4 is a plan view of the substrate 6. The light transmitting mask 2 is placed at a position optically conjugate to the mask pattern 4. The substrate 6 is also placed at a position optically conjugate to the mask pattern 4. Figure 5
4 is a sectional view taken along line LL in FIG. 4. FIG. In FIG. 5, A is a convex portion and B is a concave portion. In FIG. 2, A1 is a light transmitting portion provided corresponding to the convex portion A on the substrate 6, and B1 is a light shielding portion provided corresponding to the concave portion B on the substrate 6. In FIG. 3, A2 is an area where light from the light source 1 is irradiated through the light-transmitting part A1 of the light-transmitting mask 2, and B2 is an area where the light from the light source is blocked by the light-blocking part B1 of the light-transmitting mask 2. . Note that the convex portion A and region A2, the transparent portion A1 and region A2, the recessed portion B and region B2, and the light shielding portion B1 and region B2 are each optically conjugate and have a one-to-one correspondence.

【0009】このような構成の投影露光装置を用いて基
板6上にマスクパターン4を転写すると、基板6上に転
写されるパターンはマスクパターン4上の領域A2のパ
ターンのみになる。つまり、基板6上の凸部A上にのみ
パターンが転写される。そのため、基板6上全体に一度
にマスクパターン4を転写した場合に焦点が大きくはず
れる凹部Bのことは考慮する必要がない。なお、上記に
示した凸部Aへのパターンの転写時には凸部Aに最適の
所に焦点を合わせる。
[0009] When the mask pattern 4 is transferred onto the substrate 6 using the projection exposure apparatus having such a configuration, only the pattern in the area A2 on the mask pattern 4 will be transferred onto the substrate 6. In other words, the pattern is transferred only onto the convex portions A on the substrate 6. Therefore, there is no need to take into consideration the recesses B, which would be largely out of focus when the mask pattern 4 is transferred all over the substrate 6 at once. In addition, when transferring the pattern to the convex portion A shown above, the convex portion A is focused at the optimum location.

【0010】次に、透遮光マスク2の透光部A1と遮光
部B1を逆にした透遮光マスク、つまり、透光部A1を
遮光部に、遮光部B1を透光部にした透遮光マスクを用
いて基板6上にマスクパターン4を転写する。このとき
基板6上に転写されるパターンはマスクパターン4の領
域B2のパターンのみになる。つまり、基板6上の凹部
B上にのみパターンが転写される。そのため、基板6上
全体に一度にマスクパターン4を転写した場合に焦点が
大きくはずれる凸部Aのことは考慮する必要がない。な
お、上記に示した凹部Bへのパターンの転写時には凹部
Bに最適の所に焦点を合わせる。
Next, a light transmitting mask in which the light transmitting part A1 and the light shielding part B1 of the light transmitting mask 2 are reversed, that is, a light transmitting mask in which the light transmitting part A1 is the light shielding part and the light shielding part B1 is the light transmitting part. The mask pattern 4 is transferred onto the substrate 6 using a . At this time, the pattern transferred onto the substrate 6 is only the pattern in area B2 of the mask pattern 4. In other words, the pattern is transferred only onto the recesses B on the substrate 6. Therefore, there is no need to consider the convex portion A, which would be largely out of focus when the mask pattern 4 is transferred all over the substrate 6 at once. Note that when transferring the pattern to the recess B shown above, the optimum focus is set on the recess B.

【0011】なお、上記実施例では透遮光マスク2の透
光部,遮光部を各々凸部A,凹部B2つの高さに対応し
て形成した2つの透遮光マスクを用いたが、基板6上に
3以上の高さの段差表面が形成されている場合には各々
の高さに応じて透光部,遮光部を形成した3つ以上の透
遮光マスク2を用い、透遮光マスクを交換しつつ3回以
上に分けて露光すればよい。
In the above embodiment, two light-transmitting and shielding masks were used in which the light-transmitting and light-blocking portions of the light-transmitting and shielding mask 2 were formed to correspond to the heights of the convex portion A and the concave portion B, respectively. If a stepped surface with a height of 3 or more is formed, use three or more light-transmitting masks 2 with light-transmitting parts and light-blocking parts formed according to the height of each, and replace the light-transmitting masks. The exposure may be carried out three or more times.

【0012】0012

【発明の効果】以上のようにこの発明によれば、段差表
面の高さに応じた透光部および遮光部を有し、マスクパ
ターンに対して光学的に共役な位置に設置された透遮光
マスクを備え、透遮光マスクを交換しつつマスクパター
ンを基板上に複数回に分けて転写するようにしたので、
段差表面の各々の高さに応じて焦点を合わせることがで
きる。その結果、露光面が焦点面と大きくずれることが
ないという効果がある。
Effects of the Invention As described above, according to the present invention, the light-transmitting and light-shielding parts are provided in a position that is optically conjugate with respect to the mask pattern, and have a light-transmitting part and a light-shielding part corresponding to the height of the stepped surface. A mask is provided, and the mask pattern is transferred onto the substrate in multiple steps while replacing the light-transmitting mask.
The focus can be adjusted according to the height of each stepped surface. As a result, there is an effect that the exposure plane does not deviate significantly from the focal plane.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】この発明に係る投影露光装置の構成を示す構成
図である。
FIG. 1 is a configuration diagram showing the configuration of a projection exposure apparatus according to the present invention.

【図2】透遮光マスクの平面図である。FIG. 2 is a plan view of a light-transmitting mask.

【図3】マスクパターンの平面図である。FIG. 3 is a plan view of a mask pattern.

【図4】基板の平面図である。FIG. 4 is a plan view of the substrate.

【図5】基板の断面図である。FIG. 5 is a cross-sectional view of the substrate.

【符号の説明】[Explanation of symbols]

2  透遮光マスク 4  マスクパターン 6  基板 2 Transparent light mask 4 Mask pattern 6 Board

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  複数の高さの段差表面を有する基板上
にマスクパターンを転写する投影露光装置において、前
記段差表面の前記高さに応じた透光部および遮光部を有
し、前記マスクパターンに対して光学的に共役な位置に
設置された透遮光マスクを備え、前記透遮光マスクを交
換しつつ前記マスクパターンを前記基板上に複数回に分
けて転写するようにしたことを特徴とする投影露光装置
。
1. A projection exposure apparatus for transferring a mask pattern onto a substrate having a step surface having a plurality of heights, the projection exposure apparatus having a light-transmitting portion and a light-blocking portion corresponding to the heights of the step surface, the mask pattern being The present invention is characterized by comprising a light-transmitting mask placed at a position optically conjugate to the light-transmitting mask, and transferring the mask pattern onto the substrate in multiple steps while exchanging the light-transmitting mask. Projection exposure equipment.
JP3150254A 1991-06-21 1991-06-21 Projection aligner Pending JPH04372111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3150254A JPH04372111A (en) 1991-06-21 1991-06-21 Projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3150254A JPH04372111A (en) 1991-06-21 1991-06-21 Projection aligner

Publications (1)

Publication Number Publication Date
JPH04372111A true JPH04372111A (en) 1992-12-25

Family

ID=15492927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3150254A Pending JPH04372111A (en) 1991-06-21 1991-06-21 Projection aligner

Country Status (1)

Country Link
JP (1) JPH04372111A (en)

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