JPH0438105U - - Google Patents
Info
- Publication number
- JPH0438105U JPH0438105U JP8088190U JP8088190U JPH0438105U JP H0438105 U JPH0438105 U JP H0438105U JP 8088190 U JP8088190 U JP 8088190U JP 8088190 U JP8088190 U JP 8088190U JP H0438105 U JPH0438105 U JP H0438105U
- Authority
- JP
- Japan
- Prior art keywords
- directional coupler
- drains
- field effect
- sources
- effect transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Reversible Transmitting Devices (AREA)
Description
第1図はこの考案の一実施例による可変減衰器
を示す構成図、第2図は、従来の可変減衰器を示
す構成図である。
1は3dB方向性結合器、2a,2b,2c,
2dは入出力端子、3a,3b,3c,3dは電
界効果トランジスタ、4はドレイン端子、5はソ
ース端子、6はゲート端子、7a,7b,7c,
7dは抵抗、8はグランドである。なお、図中、
同一符号は同一、又は相当部分を示す。
FIG. 1 is a block diagram showing a variable attenuator according to an embodiment of this invention, and FIG. 2 is a block diagram showing a conventional variable attenuator. 1 is a 3dB directional coupler, 2a, 2b, 2c,
2d is an input/output terminal, 3a, 3b, 3c, 3d are field effect transistors, 4 is a drain terminal, 5 is a source terminal, 6 is a gate terminal, 7a, 7b, 7c,
7d is a resistor, and 8 is a ground. In addition, in the figure,
The same reference numerals indicate the same or corresponding parts.
Claims (1)
された4端子を持つ3dB方向性結合器と、上記
3dB方向性結合器の2分配された2つの入出力
端子とグランドの間にそれぞれ設けられた、ドレ
イン−ソース間を直列に縦続接続された所定の数
の電界効果トランジスタと、前記電界効果トラン
ジスタのドレイン−ソース間のそれぞれ並列に接
続された所定の抵抗値を持つ抵抗とからなる可変
減衰器。 A 3 dB directional coupler with four terminals formed on a monolithic microwave integrated circuit or the like, and a 3 dB directional coupler provided between the two divided input/output terminals of the 3 dB directional coupler and the ground, respectively. A variable attenuator comprising a predetermined number of field effect transistors connected in series between drains and sources, and resistors each having a predetermined resistance value connected in parallel between the drains and sources of the field effect transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8088190U JPH0438105U (en) | 1990-07-30 | 1990-07-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8088190U JPH0438105U (en) | 1990-07-30 | 1990-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0438105U true JPH0438105U (en) | 1992-03-31 |
Family
ID=31626322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8088190U Pending JPH0438105U (en) | 1990-07-30 | 1990-07-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0438105U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015174138A1 (en) * | 2014-05-15 | 2015-11-19 | 日本電気株式会社 | Variable attenuator, attenuation adjustment circuit, and attenuation adjustment method |
-
1990
- 1990-07-30 JP JP8088190U patent/JPH0438105U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015174138A1 (en) * | 2014-05-15 | 2015-11-19 | 日本電気株式会社 | Variable attenuator, attenuation adjustment circuit, and attenuation adjustment method |
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