JPH0439791B2 - - Google Patents
Info
- Publication number
- JPH0439791B2 JPH0439791B2 JP59111396A JP11139684A JPH0439791B2 JP H0439791 B2 JPH0439791 B2 JP H0439791B2 JP 59111396 A JP59111396 A JP 59111396A JP 11139684 A JP11139684 A JP 11139684A JP H0439791 B2 JPH0439791 B2 JP H0439791B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- hgcdte
- high concentration
- cadmium telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Element Separation (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関する。特
に、1.0〜15μｍ程度の波長範囲に感度を有する平
面画像認識装置として機能するフオトダイオード
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device. In particular, the present invention relates to a method of manufacturing a photodiode that functions as a flat image recognition device having sensitivity in a wavelength range of about 1.0 to 15 μm.
1.0〜15μｍ程度の波長範囲に感度を有するフオ
トダイオードの材料として水銀カドミウムテルル
（以下HgCdTeという。）が使用される。 Mercury cadmium tellurium (hereinafter referred to as HgCdTe) is used as a material for photodiodes that are sensitive to a wavelength range of about 1.0 to 15 μm.
フオトダイオードをもつて構成される平面画像
認識装置の１例に、平面状のフオトダイオード上
に格子状等のチヤンネルストツプ層を形成してフ
オトダイオード面を複数の画素に分割し、各画素
からリードを導出する構造が知られている。 An example of a flat image recognition device configured with a photodiode is to form a channel stop layer in a grid pattern on a flat photodiode to divide the photodiode surface into a plurality of pixels. Structures for deriving leads are known.
かかる構造の平面画像認識装置において、その
解像度を良好にするには、格子状等のチヤンネル
ストツプ層によつて囲まれる領域の面積すなわち
各画素の面積を小さくし、かつ、各画素間のリー
ク電流を減少するため、チヤンネルストツプ層の
厚さはかなり厚く好ましくは5μｍ程度とするこ
とが望ましい。 In order to improve the resolution of a planar image recognition device having such a structure, it is necessary to reduce the area of the region surrounded by the lattice-like channel stop layer, that is, the area of each pixel, and to reduce leakage between each pixel. In order to reduce the current, it is desirable that the thickness of the channel stop layer be fairly thick, preferably on the order of 5 .mu.m.
本発明は、HgCdTeを材料とする赤外線フオト
ダイオードよりなる平面画像認識装置の製造方法
において、チヤンネルストツプ層を厚く形成する
ことを可能にする改良である。 The present invention is an improvement that enables a thick channel stop layer to be formed in a method for manufacturing a flat image recognition device comprising an infrared photodiode made of HgCdTe.
HgCdTeを材料とする赤外線フオトダイオード
よりなる平面画像認識装置の上記せるチヤンネル
ストツプ層は各画素を区切るように格子状に形成
される高不純物濃度領域をもつて構成することが
できるが、この格子状高不純物濃度領域を形成す
るために使用される従来技術に係る方法には、(イ)
イオン注入法を使用して不純物を格子状領域に打
ち込む方法と、(ロ)格子状に開口を形成し、この格
子状開口を埋めるように高不純物濃度のHgCdTe
層を形成した後、この工程において格子状領域上
にも不可避的に形成された高不純物濃度の
HgCdTe層をエツチングして、上記の高不純物濃
度のHgCdTe層が格子状埋め込み層としてのみ残
留しこれがチヤンネルストツプ層となるようにす
る方法とがあつた。
The channel stop layer mentioned above in a planar image recognition device made of an infrared photodiode made of HgCdTe can be constructed with high impurity concentration regions formed in a lattice shape to separate each pixel. Conventional methods used to form high impurity concentration regions include (a)
One method is to implant impurities into a lattice-shaped region using ion implantation, and the other is to form openings in a lattice-shaped region and fill the lattice-shaped openings with HgCdTe with a high impurity concentration.
After forming the layer, high impurity concentration that is inevitably formed also on the lattice region in this process.
There is a method in which the HgCdTe layer is etched so that the HgCdTe layer with the high impurity concentration remains only as a lattice-shaped buried layer, which becomes a channel stop layer.
ところが、上記せる従来技術に係る方法にあつ
ては、チヤンネルストツプ層の厚さを十分に厚く
なしえず、満足すべき解像度が得にくいという欠
点があつた。すなわち、上記の(イ)の方法をもつて
形成しうるチヤンネルストツプ層の厚さは、イオ
ン注入法の本来的限界よりして、1μｍ程度であ
り、(ロ)の方法においては、低不純物濃度の
HgCdTe層をエツチングせず、高不純物濃度の
HgCdTe層のみを選択的にエツチングするエツチ
ヤントが存在しないため、格子状埋め込み層（チ
ヤンネルストツプ層）上に不可避的に形成された
不要の高不純物濃度のHgCdTe層をエツチングす
る際、格子状埋め込み層（チヤンネルストツプ
層）も同時にいくらかエツチングする結果とな
り、この方法をもつてしても、十分に厚いチヤン
ネルストツプ層を形成することは困難であり、光
が照射されない画素にもリーク電流が流れて、画
像を正確にピツクアツプすることができず、十分
な解像度が得難いという欠点があつた。
However, the method according to the prior art described above has the disadvantage that the thickness of the channel stop layer cannot be made sufficiently thick, making it difficult to obtain a satisfactory resolution. In other words, the thickness of the channel stop layer that can be formed using the method (a) above is approximately 1 μm due to the inherent limit of ion implantation, and the thickness of the channel stop layer that can be formed using the method (b) is approximately 1 μm. of concentration
High impurity concentration without etching the HgCdTe layer
Since there is no etchant that selectively etches only the HgCdTe layer, when etching the unnecessary HgCdTe layer with high impurity concentration that is inevitably formed on the lattice-shaped buried layer (channel stop layer), the lattice-shaped buried layer This results in some etching of the channel stop layer (channel stop layer) at the same time, and even with this method, it is difficult to form a sufficiently thick channel stop layer, and leakage current flows even in pixels that are not irradiated with light. However, the disadvantage was that images could not be picked up accurately and it was difficult to obtain sufficient resolution.
本発明は、上記の問題点を解消し、チヤンネル
ストツプ層が厚く解像度が向上している、
HgCdTeを材料とする平面画像認識装置の製造方
法を提供するものであり、その手段は、カドミウ
ムテルル基板上に高濃度１導電型の水銀カドミウ
ムテルル層を形成して該高濃度１導電型の水銀カ
ドミウムテルル層を格子状にエツチング成形し、
低濃度１導電型の水銀カドミウムテルル層を形成
し、高濃度１導電型または高濃度反対導電型の水
銀カドミウムテルル層を形成し、絶縁物基板を接
着し、フツ酸と硝酸と酢酸と水とを混合した溶液
をもつて前記カドミウムテルル基板を溶解除去
し、前記格子状の高濃度１導電型水銀カドミウム
テルル層と前記低濃度１導電型の水銀カドミウム
テルル層の上に絶縁物層を形成し、前記格子状の
高濃度１導電型の水銀カドミウムテルル層に対向
しない領域において１方の電極を形成し、前記高
濃度１導電型または高濃度反対導電型水銀カドミ
ウムテルル層に他方の電極を形成する工程を有す
る半導体装置の製造方法によつてなされる。
The present invention solves the above-mentioned problems, and has a thick channel stop layer and improved resolution.
The present invention provides a method for manufacturing a planar image recognition device using HgCdTe as a material, and its means include forming a highly concentrated 1-conductivity type mercury cadmium telluride layer on a cadmium-tellurium substrate, and forming a high-concentration 1-conductivity type mercury The cadmium tellurium layer is etched into a grid pattern,
A low concentration 1 conductivity type mercury cadmium telluride layer is formed, a high concentration 1 conductivity type or a high concentration opposite conductivity type mercury cadmium tellurium layer is formed, an insulator substrate is bonded, and hydrofluoric acid, nitric acid, acetic acid, and water are formed. The cadmium-tellurium substrate is dissolved and removed using a solution mixed with the above, and an insulating layer is formed on the lattice-shaped high-concentration 1-conductivity type mercury-cadmium-tellurium layer and the low-concentration 1-conductivity type mercury-cadmium-tellurium layer. , one electrode is formed in a region not facing the lattice-shaped high concentration 1 conductivity type mercury cadmium tellurium layer, and the other electrode is formed on the high concentration 1 conductivity type or high concentration opposite conductivity type mercury cadmium telluride layer. A method for manufacturing a semiconductor device includes the steps of:
本発明は、フツ酸と硝酸と酢酸と水との２〜
５：３〜５：６：６の溶液が、カドミウムテルル
（以下CdTeという。）は溶解するがHgCdTeは全
く溶解しないという新規な性質を利用したもので
あり、(イ)ます、CdTeよりなる仮の基板上に高濃
度１導電型のHgCdTe層を形成し、(ロ)公知のエツ
チヤント（例えばブロムメタノール）を使用して
なすフオトリソグラフイー法を使用して、この
HgCdTe層を格子状にエツチングし、十分に厚い
（5μｍ程度の）格子状の高不純物濃度HgCdTe層
（チヤンネルストツプ層）を形成し、(ハ)その上に
低濃度のHgCdTe層を形成して上記の格子状の高
不純物濃度HgCdTe層（チヤンネルストツプ層）
を埋めてさらに低濃度HgCdTe層（活性層）を形
成し、(ニ)高濃度１導電型または高濃度反対導電型
のHgCdTe層（再結合層）を形成し、(ホ)さらにそ
の上にサフアイヤ等の絶縁物基板（真の基板）を
貼り付けた後、(ヘ)ウエーハを裏返して仮の基板の
みを溶解除去する。この工程には、HgCdTeは溶
解せずCdTeのみを溶解する上記のエツチヤント
を使用するので、高不純物濃度のHgCdTeよりな
るチヤンネルストツプ層は全く溶解されずその十
分に大きな厚さは温存されることになる。
The present invention is based on the combination of hydrofluoric acid, nitric acid, acetic acid, and water.
A solution of 5:3 to 5:6:6 takes advantage of the novel property that cadmium tellurium (hereinafter referred to as CdTe) dissolves but HgCdTe does not dissolve at all. A highly concentrated 1-conductivity type HgCdTe layer is formed on the substrate, and (b) this is formed using a photolithographic method using a known etchant (for example, bromine methanol).
The HgCdTe layer is etched in a lattice pattern to form a sufficiently thick (approximately 5 μm) lattice-shaped high impurity concentration HgCdTe layer (channel stop layer), and (c) a low concentration HgCdTe layer is formed on top of it. The above lattice-shaped high impurity concentration HgCdTe layer (channel stop layer)
Then, a low concentration HgCdTe layer (active layer) is formed, (d) a high concentration HgCdTe layer of one conductivity type or a high concentration opposite conductivity type (recombination layer) is formed, and (e) a sapphire layer is further formed on top of the HgCdTe layer (recombination layer). After attaching an insulating substrate (real substrate) such as the following, (f) turn the wafer over and melt and remove only the temporary substrate. This process uses the above-mentioned etchant that dissolves only CdTe but not HgCdTe, so the channel stop layer made of HgCdTe with a high impurity concentration is not dissolved at all and its sufficiently large thickness is preserved. become.
要するに、上記(ロ)のフオトリソグラフイー法を
もつてすれば厚さが5μｍ程度の格子状のチヤン
ネルストツプ層を形成することは可能であり、上
記の新規なエツチヤントはHgCdTeは溶解せず
CdTeのみ溶解するから、上記(ヘ)の工程において
はチヤンネルストツプ層の厚さが減少することは
ない。よつて、十分に厚いチヤンネルストツプ層
が実現して解像度の高い平面画像認識装置が実現
する。 In short, it is possible to form a lattice-like channel stop layer with a thickness of about 5 μm using the photolithography method described in (2) above, and the above new etchant does not dissolve HgCdTe.
Since only CdTe is dissolved, the thickness of the channel stop layer is not reduced in the step (f) above. Therefore, a sufficiently thick channel stop layer is realized, and a high-resolution planar image recognition device is realized.
以下、図面を参照しつゝ本発明の実施例を詳細
に説明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図参照
厚さ0.5mm程度のCdTe基板１（仮の基板）上
に、液相エピタキシヤル成長法を使用して、イン
ジユウムを５×1016cm-3程度に含むn+−HgCdTe
層２を5μｍ程度の厚さに形成する。Refer to Figure 1 N + -HgCdTe containing indium in an amount of about 5×10 16 cm -3 is grown on a CdTe substrate 1 (temporary substrate) with a thickness of about 0.5 mm using a liquid phase epitaxial growth method.
Layer 2 is formed to a thickness of about 5 μm.
第２図参照
n+−HgCdTe層２を、格子状にエツチング形
成して、その中に、１辺の長さが10〜20μｍ程度
の正方形の空間を多数形成する。格子２′（チヤ
ンネルストツプ層）の幅は数μｍ程度とする。こ
の工程は、ブロムメタノールをエツチヤントとし
てなすフオトリソグラフイー法を使用して可能で
ある。ブロムメタノールはCdTeを溶解しないか
ら、格子２′（チヤンネルストツプ層）の幅は5μ
ｍ程度に保持される。Refer to FIG. 2. The n + -HgCdTe layer 2 is etched into a lattice shape, and a number of square spaces each having a side length of about 10 to 20 μm are formed therein. The width of the grating 2' (channel stop layer) is approximately several μm. This step is possible using photolithography with bromomethanol as the etchant. Since bromo-methanol does not dissolve CdTe, the width of lattice 2' (channel stop layer) is 5μ.
It is maintained at about m.
第３図参照
液相エピタキシヤル成長法を使用して、インジ
ユウムを２×1014cm-3程度に含むn-−HgCdTe層
３（活性層）を厚さ10〜20μｍ程度に形成し、さ
らにつゞけてn+またはp+のHgCdTe層４（再結
合層）を厚さ50μｍ程度に形成する。Refer to Figure 3. Using the liquid phase epitaxial growth method, an n - -HgCdTe layer 3 (active layer) containing about 2 x 10 14 cm -3 of indium is formed to a thickness of about 10 to 20 μm, and further First, an n + or p + HgCdTe layer 4 (recombination layer) is formed to a thickness of about 50 μm.
第４図参照
厚さ１mm程度のサフアイヤ基板５（真の基板）
を接着する。See Figure 4 Saffire substrate 5 (true substrate) with a thickness of approximately 1 mm
Glue.
第５図参照
フツ酸と硝酸と酢酸と水とを２〜５：３〜５：
６：６の容量比に含有する混合溶液をエツチヤン
トとしてCdTe基板１のみを溶解除去する。この
溶液はHgCdTeを溶解しないから、チヤンネルス
トツプ層２′と活性層３とは溶解されず、チヤン
ネルストツプ層２′の厚さは減少しない。See Figure 5 Fluoric acid, nitric acid, acetic acid, and water in a ratio of 2 to 5:3 to 5:
Using a mixed solution containing a volume ratio of 6:6 as an etchant, only the CdTe substrate 1 is dissolved and removed. Since this solution does not dissolve HgCdTe, the channel stop layer 2' and the active layer 3 are not dissolved, and the thickness of the channel stop layer 2' is not reduced.
第６図参照
活性層３上に二酸化シリコン層６を厚さ数μｍ
程度に形成する。この工程はプラズマCVD法等
をもつて可能である。リフトオフ法を使用して一
方の電極７を形成する。電極７の材料はアルミニ
ウム等が適当である。Refer to Figure 6. Silicon dioxide layer 6 is placed on the active layer 3 to a thickness of several μm.
Form to a certain degree. This step can be performed using a plasma CVD method or the like. One electrode 7 is formed using a lift-off method. A suitable material for the electrode 7 is aluminum or the like.
再結合層４に他方の電極８を形成する。 The other electrode 8 is formed on the recombination layer 4.
以上の工程をもつて製造された平面画像認識装
置のチヤンネルストツプ層２′の厚さは5μｍ程度
と厚いので、各画素間が完全に絶縁され、リーク
電流が流れず、良好な解像度が実現する。 The thickness of the channel stop layer 2' of the planar image recognition device manufactured using the above process is as thick as approximately 5 μm, so each pixel is completely insulated, no leakage current flows, and good resolution is achieved. do.
以上説明せるとおり、本発明においては、
CdTeよりなる仮の基板上に、高不純物濃度の
HgCdTe層よりなる厚さの厚いチヤンネルストツ
プ層によつて区切られた低不純物濃度のHgCdTe
層よりなる活性層を形成し、後に、CdTeのみを
溶解するエツチヤントをもつてCdTeよりなる仮
の基板のみを溶解除去するので、厚さが十分に厚
いチヤンネルストツプ層を有し、解像度の高い利
益を有するHgCdTeよりなる平面画像認識装置を
提供することができる。
As explained above, in the present invention,
A high impurity concentration is applied on a temporary substrate made of CdTe.
Low doped HgCdTe separated by thick channel stop layers consisting of HgCdTe layers
After forming an active layer consisting of CdTe, the temporary substrate made of CdTe is removed by using an etchant that dissolves only CdTe, so it has a sufficiently thick channel stop layer and high resolution. A planar image recognition device made of HgCdTe with advantages can be provided.
第１〜６図は、本発明の実施例の主要工程完了
後のウエーハ断面図である。
１……CdTe基板（仮の基板）、２……n+−
HgCdTe層、２′……格子（チヤンネルストツプ
層）、３……n-−HgCdTe層３（活性層）、４…
…n+またはp+のHgCdTe層（再結合層）、５……
サフアイヤ基板（真の基板）、６……二酸化シリ
コン層（絶縁物層）、７，８……電極。
1 to 6 are cross-sectional views of a wafer after completion of main steps in an embodiment of the present invention. 1...CdTe substrate (temporary substrate), 2...n + -
HgCdTe layer, 2'... lattice (channel stop layer), 3...n - -HgCdTe layer 3 (active layer), 4...
...n + or p + HgCdTe layer (recombination layer), 5...
Saffire substrate (true substrate), 6... silicon dioxide layer (insulator layer), 7, 8... electrode.
Claims (1)
水銀カドミウムテルル層を形成して該高濃度１導
電型の水銀カドミウムテルル層を格子状にエツチ
ング成形し、低濃度１導電型の水銀カドミウムテ
ルル層を形成し、高濃度１導電型または高濃度反
対導電型の水銀カドミウムテルル層を形成し、絶
縁物基板を接着し、フツ酸と硝酸と酢酸と水とを
混合した溶液をもつて前記カドミウムテルル基板
を溶解除去し、前記格子状の高濃度１導電型水銀
カドミウムテルル層と前記低濃度１導電型の水銀
カドミウムテルル層の上に絶縁物層を形成し、前
記格子状の高濃度１導電型の水銀カドミウムテル
ル層に対向しない領域において１方の電極を形成
し、前記高濃度１導電型または高濃度反対導電型
水銀カドミウムテルル層に他方の電極を形成する
工程を有する半導体装置の製造方法。1. Form a high concentration 1 conductivity type mercury cadmium telluride layer on a cadmium telluride substrate, etching the high concentration 1 conductivity type mercury cadmium tellurium layer into a lattice shape, and form a low concentration 1 conductivity type mercury cadmium telluride layer. A mercury cadmium telluride layer of high concentration one conductivity type or high concentration opposite conductivity type is formed, an insulator substrate is bonded, and a solution of a mixture of hydrofluoric acid, nitric acid, acetic acid and water is applied to the cadmium telluride substrate. An insulating layer is formed on the lattice-shaped high concentration 1-conductivity type mercury cadmium telluride layer and the low-concentration 1-conductivity type mercury cadmium tellurium layer, and A method for manufacturing a semiconductor device comprising the steps of forming one electrode in a region not facing the mercury cadmium telluride layer, and forming the other electrode in the high concentration one conductivity type or high concentration opposite conductivity type mercury cadmium telluride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111396A JPS60254771A (en) | 1984-05-31 | 1984-05-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111396A JPS60254771A (en) | 1984-05-31 | 1984-05-31 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254771A JPS60254771A (en) | 1985-12-16 |
| JPH0439791B2 true JPH0439791B2 (en) | 1992-06-30 |
Family
ID=14560089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111396A Granted JPS60254771A (en) | 1984-05-31 | 1984-05-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254771A (en) |
-
1984
- 1984-05-31 JP JP59111396A patent/JPS60254771A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254771A (en) | 1985-12-16 |
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