JPH0442818B2 - - Google Patents
Info
- Publication number
- JPH0442818B2 JPH0442818B2 JP59233127A JP23312784A JPH0442818B2 JP H0442818 B2 JPH0442818 B2 JP H0442818B2 JP 59233127 A JP59233127 A JP 59233127A JP 23312784 A JP23312784 A JP 23312784A JP H0442818 B2 JPH0442818 B2 JP H0442818B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- gas
- atmosphere
- substrate
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233127A JPS61112317A (ja) | 1984-11-07 | 1984-11-07 | Ｘ線露光方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233127A JPS61112317A (ja) | 1984-11-07 | 1984-11-07 | Ｘ線露光方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61112317A JPS61112317A (ja) | 1986-05-30 |
| JPH0442818B2 true JPH0442818B2 (de) | 1992-07-14 |
Family
ID=16950169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59233127A Granted JPS61112317A (ja) | 1984-11-07 | 1984-11-07 | Ｘ線露光方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61112317A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013089082A1 (ja) * | 2011-12-14 | 2013-06-20 | シャープ株式会社 | 基板露光装置および基板露光方法 |
| JP6197641B2 (ja) * | 2013-12-26 | 2017-09-20 | ウシオ電機株式会社 | 真空紫外光照射処理装置 |
-
1984
- 1984-11-07 JP JP59233127A patent/JPS61112317A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61112317A (ja) | 1986-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7270533B2 (en) | System for creating a turbulent flow of fluid between a mold and a substrate | |
| JPS6435916A (en) | Formation of fine pattern | |
| JPH0442818B2 (de) | ||
| JPS6351641A (ja) | 単結晶または多結晶Ｓｉ膜の微細パタ−ン形成方法 | |
| JPH09129535A (ja) | 加熱処理装置 | |
| JPS5633827A (en) | Photo etching method including surface treatment of substrate | |
| JPS57130432A (en) | Manufacture of semiconductor device | |
| JPH0778756A (ja) | 微細パターン形成方法 | |
| GB1577479A (en) | Optical exposure apparatus | |
| JPS61204933A (ja) | 半導体装置の製造方法 | |
| JPH11238669A (ja) | 露光装置 | |
| JPH03180033A (ja) | パターン形成方法 | |
| JPH09246235A (ja) | エッチング方法およびエッチング装置 | |
| JP2504832B2 (ja) | レジストパタ―ンの形成方法 | |
| JP2003068615A (ja) | 転写マスクブランクス、その製造方法、転写マスク、その製造方法及び露光方法 | |
| JPS59194440A (ja) | パタ−ン形成装置 | |
| JPS5711344A (en) | Dry developing method | |
| JPS63131143A (ja) | フオトマスク | |
| JPS60123842A (ja) | ホトマスクの製造方法 | |
| JPH02134639A (ja) | レジストパターン形成方法 | |
| JPS62150352A (ja) | ガラスマスク | |
| JPS63152129A (ja) | パタ−ン形成方法 | |
| JPS6430223A (en) | Wetetching processor | |
| JPS6272127A (ja) | パタ−ン形成方法 | |
| JPH01161716A (ja) | パターン転写装置 |