JPH0442818B2 - - Google Patents

Info

Publication number
JPH0442818B2
JPH0442818B2 JP59233127A JP23312784A JPH0442818B2 JP H0442818 B2 JPH0442818 B2 JP H0442818B2 JP 59233127 A JP59233127 A JP 59233127A JP 23312784 A JP23312784 A JP 23312784A JP H0442818 B2 JPH0442818 B2 JP H0442818B2
Authority
JP
Japan
Prior art keywords
mask
gas
atmosphere
substrate
ray exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59233127A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61112317A (ja
Inventor
Yukio Kenbo
Ryuichi Funatsu
Yoshihiro Yoneyama
Minoru Ikeda
Akira Inagaki
Yasunari Hayata
Kozo Mochiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59233127A priority Critical patent/JPS61112317A/ja
Publication of JPS61112317A publication Critical patent/JPS61112317A/ja
Publication of JPH0442818B2 publication Critical patent/JPH0442818B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59233127A 1984-11-07 1984-11-07 X線露光方法及びその装置 Granted JPS61112317A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59233127A JPS61112317A (ja) 1984-11-07 1984-11-07 X線露光方法及びその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59233127A JPS61112317A (ja) 1984-11-07 1984-11-07 X線露光方法及びその装置

Publications (2)

Publication Number Publication Date
JPS61112317A JPS61112317A (ja) 1986-05-30
JPH0442818B2 true JPH0442818B2 (fr) 1992-07-14

Family

ID=16950169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59233127A Granted JPS61112317A (ja) 1984-11-07 1984-11-07 X線露光方法及びその装置

Country Status (1)

Country Link
JP (1) JPS61112317A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013089082A1 (fr) * 2011-12-14 2013-06-20 シャープ株式会社 Dispositif et procédé d'exposition de substrat
JP6197641B2 (ja) * 2013-12-26 2017-09-20 ウシオ電機株式会社 真空紫外光照射処理装置

Also Published As

Publication number Publication date
JPS61112317A (ja) 1986-05-30

Similar Documents

Publication Publication Date Title
US7270533B2 (en) System for creating a turbulent flow of fluid between a mold and a substrate
JPS6435916A (en) Formation of fine pattern
JPH0442818B2 (fr)
JPS6351641A (ja) 単結晶または多結晶Si膜の微細パタ−ン形成方法
JPH09129535A (ja) 加熱処理装置
JPS5633827A (en) Photo etching method including surface treatment of substrate
JPS57130432A (en) Manufacture of semiconductor device
JPH0778756A (ja) 微細パターン形成方法
GB1577479A (en) Optical exposure apparatus
JPS61204933A (ja) 半導体装置の製造方法
JPH11238669A (ja) 露光装置
JPH03180033A (ja) パターン形成方法
JPH09246235A (ja) エッチング方法およびエッチング装置
JP2504832B2 (ja) レジストパタ―ンの形成方法
JP2003068615A (ja) 転写マスクブランクス、その製造方法、転写マスク、その製造方法及び露光方法
JPS59194440A (ja) パタ−ン形成装置
JPS5711344A (en) Dry developing method
JPS63131143A (ja) フオトマスク
JPS60123842A (ja) ホトマスクの製造方法
JPH02134639A (ja) レジストパターン形成方法
JPS62150352A (ja) ガラスマスク
JPS63152129A (ja) パタ−ン形成方法
JPS6430223A (en) Wetetching processor
JPS6272127A (ja) パタ−ン形成方法
JPH01161716A (ja) パターン転写装置