JPH0442929A - Method and device for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To accurately grasp the concentration of the reaction gas inside the chamber of a CV device so as to form a stable film for flattening by specifying the pressure of the reaction gas inside the chamber, and detecting the intensity of the chemical luminescence by the reaction of B2H6 and O2 inside the reaction gas. CONSTITUTION:In case of forming a BPSG film, O2, SiH4, B2H6, PH3, and N2 are supplied respectively from gas supply pipes 5a - 5e in the condition that the wafer is put in the chamber, and the gas pressure inside the chamber 1 is maintained at 400 - 3000 Pa by a gas pressure adjuster 9, and the tempera ture is set to 400 deg.C. A BPSG film is formed at the wafer, and also by the reaction of B2H6 and O2, chemical luminescence of about 5000 angstroms is generated. Since the intensity of this chemical luminescence vary with the concen tration with B2O6 and O2, the concentration with B2H6 and O2 can be monitored at all times by monitoring the intensity with a monochromator. And the concen tration with B2H6 and O2 can be maintained constant by adjusting each flow adjuster 4, and a BPSG film of stable thickness can be formed.

Description

[Detailed Description of the Invention] [Summary] Regarding the method of manufacturing 6BPsG film [7] or B2O3 film using a CVD device, it is possible to accurately grasp the reaction gas concentration in the chamber of the CVD device [7] to obtain a stable planarized film. (7) A method for manufacturing a BPSG film or a B2O3 film formed on a substrate by a CVD method, in which the reaction gas pressure in the chamber is set to 400 to 3000 Pa, and the B2 in the reaction gas is
He and 0. By detecting the intensity of chemical luminescence due to the reaction of B2H6 and 0.
The supply amount is adjusted and configured.

[Industrial application field]

This invention is a BPSG film or B produced by a CVD device.
0. The present invention relates to a method for manufacturing a membrane.

A BPSG film or B2 film is applied on the substrate as a flattening film for flattening the substrate surface in the manufacturing process of semiconductor devices.
An O3 film is formed. In order to stabilize the thickness of this flattening film, it is necessary to keep the concentration of the reactive gas constant.

[Conventional technology]

Conventionally, when forming a BPSG film by the CVD method, S I H4+ P Ha + B was used as a reactive gas.
! Hs + O1 is used, and BgHs and 02 are used as reaction gases when forming a BzOs film. At this time, the flow rate of each reaction gas is monitored by a flow meter in order to maintain a constant concentration of the reaction gas within the chamber of the CVD apparatus.

[Problem to be solved by the invention]

However, in the above method, the gas concentration in the chamber of the CVD apparatus is indirectly monitored by monitoring the total amount of reaction gas that has passed through the flow meter.
It is not possible to accurately monitor the gas concentration that changes from moment to moment within the chamber.

Therefore, there is a problem that the thickness of the planarization film may become unstable.

SUMMARY OF THE INVENTION An object of the present invention is to provide a manufacturing method and an apparatus for manufacturing the same by which a stable thin film for planarization can be formed by accurately determining the concentration of a reaction gas in a chamber of a CVD apparatus.

[Means to solve the problem]

The above purpose is to form BPS on a substrate by CVD method.
In the method for producing a G film or a B2O3 film, the reaction gas pressure in the chamber is set to 400 to 3000 Pa, and the BzHs in the reaction gas and 0. By detecting the intensity of chemical luminescence caused by the reaction with a monochromator, BxHe
This is achieved by a manufacturing method that adjusts the supply amount of BPS and 02.
BzHs in the reaction gas in chamber 1 and 0
This is carried out by providing a monochromator 10 that detects the intensity of chemical luminescence caused by the reaction in step 2.

[Effect]

When the reaction gas pressure in the chamber is 400 to 3000 Pa, the reaction between B2H6 and 02 causes the BzHs and 02
Since chemical luminescence occurs depending on the concentration of
The concentration of is kept constant.

Furthermore, chemical luminescence caused by the reaction between BzHs and 02 can be monitored with a monochromator 10 provided in the chamber 1.

〔Example〕

An embodiment embodying the present invention will be described below with reference to the drawings.

FIG. 1 shows a CVD apparatus, in which a heater 2 and a gas jetting part 3 are arranged in a chamber 1, and gas supply pipes 5a to 5a each have a flow rate adjusting device 4 interposed in the gas jetting part 3.
5e is connected. Then, from outside the chamber 1 through each gas supply pipe 5a to 5e, 02, SiH
4.B! He.

PH3 and N2 are supplied. In addition, N
2 is supplied to adjust the gas pressure within the chamber 1, and does not contribute to the reaction.

An exhaust pipe 6 is connected to the chamber 1, and waste gas in the chamber 1 is exhausted by a suction pump 8 via a booster pump 7.

Further, N2 is supplied to the exhaust pipe 6 from the gas supply pipe 5e, and N2 is also supplied via a gas pressure adjustment device 9, and the amount of N2 supplied is adjusted to the intake amount of the suction pump 8. The gas pressure inside the chamber 1 is regulated by this.

A monochromator IO is installed in the chamber 1, and a Bt
It is possible to detect the intensity of chemical luminescence generated by the reaction between Hs and 0□.

Now, when forming, for example, a BPSG film using the CVD apparatus configured as described above, 02, Si H4, and B2 Ha are supplied from the gas supply pipes 5a to 5e, respectively, with the wafer placed in the chamber.

PH3 and N2 are supplied, and the gas pressure in the chamber 1 is maintained at 400 to 3000 Pa, preferably 400 to 2670 Pa, using the gas pressure regulator 9, and the temperature in the chamber is set at about 400°C. Then, the wafer has BPSG
As a film is formed, chemical luminescence of approximately 5000 angstroms is generated due to the reaction between B2H8 and 02. This chemical luminescence is BtH
Since the intensity differs depending on the concentration of s and 02, when the intensity is monitored with the monochromator 10, B2H,l and 0
2 can be constantly monitored. Then, when a change in concentration is detected, each flow rate adjustment device 4 can be adjusted to maintain the concentrations of BzHs and 02 constant, so that a BPSG film with a stable thickness can be formed.

In addition, when forming the B,03 film, the gas supply pipe 5a,
5e, 5e to OT, B! A stable film thickness of B was obtained by supplying Hs and N2, keeping the gas pressure and temperature in the chamber 1 the same as in the case of the BPSG film, and monitoring chemical luminescence.

03 film can be formed.

〔Effect of the invention〕

As detailed above (7), the present invention exhibits the excellent effect of being able to form a stable flattening thin film by accurately determining the concentration of the reactant gas in the chamber.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing a CVD apparatus for implementing the present invention. In the figure, 1 indicates a chamber 10 that is a monochromator.

Claims (1)

[Claims] 1. A method for manufacturing a BPSG film or a B_2O_3 film formed on a substrate by the CVD method, in which the reaction gas pressure in the chamber is set to 400 to 3000 Pa, and the reaction gas contains B_2H_6 and O_2. A method for manufacturing a semiconductor device, characterized in that the amount of B_2H_6 and O_2 supplied is adjusted by detecting the intensity of chemical luminescence caused by the reaction with a monochromator. 2. A CVD apparatus for manufacturing a BPSG film or a B_2O_3 film formed on a substrate by the CVD method, in which a chamber (1) is equipped with chemical luminescence caused by a reaction between B_2H_6 and O_2 in a reaction gas in the chamber (1). 1. A semiconductor device manufacturing apparatus characterized in that a monochromator (10) for detecting the intensity of the semiconductor device is provided.