JPH0442932A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To stabilize the potential between each semiconductor by isolating semiconductor elements with an insulating film, and connecting required semiconductor elements by the buried wiring of high melting point metal. CONSTITUTION:An insulating film 2 such as a silicon oxide film, or the like is formed, for example, 1 mum on a one conductivity-type semiconductor substrate 1, and then an opening is formed to expose the semiconductor substrate 1, and on this exposed semiconductor substrate 1 is formed selectively a single crystal film of silicon 3. Next, a second opening is formed in the insulating film 2, and a high melting point metallic film 4 is formed thicker than the thickness of the insulating film 2 in this ;second opening. Furthermore, a second insulating film 5 is formed on the high melting point metallic film 4, and then a gate oxide film 6, a gate electrode 7, a source and, a drain 8 and 9 are formed on the single crystal single film of silicon 3 so as to constitute a semiconducetor element 10. Furthermore, an insulating film 11 and, selectively, an opening are formed, and a wiring layer 12 is formed in this opening so as to constitute a semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device capable of high performance and high integration, and a method for manufacturing the same.

2. Description of the Related Art Conventionally, a semiconductor device, for example, an MO8 type semiconductor device, has a third
As shown in Figure (A), a gate oxide film 6 and a gate electrode 7 are formed on a semiconductor substrate 1 of one conductivity type. - After forming impurities of opposite conductivity type, forming source/drain 8.9 to form semiconductor element 21 17, and embedding insulating film 22 for reducing junction capacitance between adjacent semiconductor elements 21. As shown in FIG. 3(B), an insulating film 23 is formed on the semiconductor substrate 1 in order to further reduce the junction capacitance with the substrate, and a silicon single crystal 24 is formed on the insulating film 23.
A method is being used to form a semiconductor element 25 there.

Problems to be Solved by the Invention In the conventional method described above, semiconductor elements are connected by one conductivity type semiconductor substrate 1 or further separated by an insulating film 23, so a plurality of isolated semiconductor elements 21, 25 are placed at the same potential. There was a problem that it was difficult to maintain the temperature and the characteristics of the device were not constant.

The present invention solves the above-mentioned problems, and aims to provide a semiconductor device in which the potential of an isolated semiconductor element is kept constant and element characteristics are stabilized, and a method for manufacturing the same.

Means for Solving the Problems In order to solve the above problems, the semiconductor device of the present invention has a structure in which a low-resistance, high-melting-point metal is embedded in an insulating film that separates semiconductor elements, and the semiconductor elements are connected. It is equipped with the following.

Further, in the method for manufacturing a semiconductor device of the present invention, an insulating film is formed on a semiconductor substrate of one conductivity type, an opening is selectively formed in the insulating film to expose the semiconductor substrate, and then the exposed semiconductor substrate is A silicon single crystal is selectively grown on the insulating film, a second opening is formed in the insulating film, and a refractory metal is formed in the second opening to be thinner than the insulating film. A second insulating film is formed on the silicon single crystal, and a semiconductor element is formed on the silicon single crystal.

Furthermore, after selectively forming a high melting point metal film on a semiconductor substrate of one conductivity type, forming an insulating film on the entire surface, and selectively forming an opening in the insulating film to expose the semiconductor substrate, After selectively growing a silicon single crystal film on the exposed semiconductor substrate, a semiconductor element is formed on the silicon single crystal.

Effect: With the above configuration, the reference potential of an isolated semiconductor element can be made constant by the high melting point metal wiring embedded in the insulating film, so that a semiconductor device with stable characteristics can be obtained.

Example An embodiment of the present invention will be described below based on the drawings.

FIG. 1 is a process sectional view for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention. In FIG. 1(A), an insulating film 2 such as a silicon oxide film is formed to a thickness of, for example, 1 micron on a semiconductor substrate 1 of one conductivity type, and an opening is formed to expose the semiconductor substrate 1. As shown in B), a silicon single crystal film 3 is selectively formed on this exposed semiconductor substrate 1. Next, a second opening is formed in the insulating film 2, and a high melting point metal film 4 is formed in the second opening to be thinner than the insulating film 2. Furthermore, the high melting point metal film 4
After forming the second insulating film 5 on the silicon single crystal film 3, as shown in FIG. 1(C), a gate oxide film 6,
A gate electrode 7 and source/drains 8 and 9 are formed to constitute a semiconductor element 10. Further, an interlayer insulating film 11 and an opening are selectively formed over the entire surface, and a wiring layer 12 is formed in the opening to form a semiconductor device.

FIG. 2 is a cross-sectional view illustrating the manufacturing process of a semiconductor device according to a second embodiment of the present invention. In FIG. 2(A), a high melting point metal film 13 is placed on a semiconductor substrate 1 of one conductivity type, for example
．． After 1 micron is formed, a predetermined pattern is formed by a normal photoetching method.

Next, after forming an insulating film 14 over the entire surface, an opening is selectively formed to expose the semiconductor substrate 1, and as shown in FIG. A crystal film 15 is selectively formed. Next, as shown in FIG. 2(C), a gate oxide film 6 is formed on the silicon single crystal film 15.
, a gate electrode 7, and a source/drain 8.9 are formed to constitute a semiconductor element 16. Further, an interlayer insulating film 16 and an opening are selectively formed over the entire surface, and a wiring layer 17 is formed in the opening to form a semiconductor device.

Note that in the above embodiment, a high melting point metal film 4 is provided on the semiconductor substrate 1.
Alternatively, although 13 was formed, it goes without saying that it may be formed between the insulating films.

Effects of the Invention As described above, according to the present invention, since semiconductor elements are separated by an insulating film and necessary semiconductor elements are connected by embedded wiring made of high melting point metal, the potential between each semiconductor element is constant. and stable characteristics can be obtained. Furthermore, since the wiring metal is embedded and formed, it has the effect that a high-density semiconductor device can be formed.

[Brief explanation of drawings]

Fig. 1 is a structural cross-sectional view for explaining the first embodiment of the present invention, Fig. 2 is a structural cross-sectional view for explaining the second embodiment of the present invention, and Fig. 3 is a structural cross-sectional view for explaining the conventional example. FIG. 1... semiconductor substrate, 2. 5.11... Insulating film, 3
...Silicon single crystal film, 4...High melting point metal film, 10
... Semiconductor element, 12... Wiring layer, 13... High melting point metal film, 14.16... Insulating film, 15... Silicon single crystal film, 17... Wiring layer. Agent Yoshihiro MorimotoFigure 1

Claims (1)

[Scope of Claims] 1. A semiconductor device provided with a high-melting point metal wiring that connects semiconductor elements along an insulating film that separates semiconductor elements formed on a semiconductor substrate of one conductivity type. 2. Forming an insulating film on a semiconductor substrate of one conductivity type, selectively forming an opening in the insulating film to expose the semiconductor substrate, and selectively growing a silicon single crystal on the exposed semiconductor substrate; Next, a second opening is formed in the insulating film, a refractory metal is formed in the second opening to be thinner than the insulating film, and a second insulating film is formed on the refractory metal. . A method for manufacturing a semiconductor device, which comprises forming a semiconductor element on the silicon single crystal. 3. After selectively forming a high melting point metal film on a semiconductor substrate of one conductivity type, forming an insulating film on the entire surface, selectively forming an opening in the insulating film to expose the semiconductor substrate, and A method for manufacturing a semiconductor device, which comprises selectively growing a silicon single crystal film on an exposed semiconductor substrate, and then forming a semiconductor element on the silicon single crystal.