JPH0442932Y2 - - Google Patents
Info
- Publication number
- JPH0442932Y2 JPH0442932Y2 JP1986066634U JP6663486U JPH0442932Y2 JP H0442932 Y2 JPH0442932 Y2 JP H0442932Y2 JP 1986066634 U JP1986066634 U JP 1986066634U JP 6663486 U JP6663486 U JP 6663486U JP H0442932 Y2 JPH0442932 Y2 JP H0442932Y2
- Authority
- JP
- Japan
- Prior art keywords
- glass sleeve
- diode
- electrode
- glass
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
この考案はプリント基板などに実装されるリー
ドレス型のダイオードに関する。[Detailed description of the invention] Industrial application field This invention relates to a leadless diode mounted on a printed circuit board or the like.
従来の技術
最近のプリント基板での電子部品の高密度実装
化の要求に伴い、電子部品は部品本体からリード
線を省略したリードレス型のものが多用されてい
る傾向にある。リードレス型のダイオードとして
は、ガラススリーブでダイオードの半導体ペレツ
トを挟んだ一対の電極を封着したものが一般的で
あり、その具体的一例を第5図を参照して、次に
説明する。2. Description of the Related Art With the recent demand for high-density mounting of electronic components on printed circuit boards, leadless electronic components, in which lead wires are omitted from the component body, are increasingly being used. A typical leadless type diode is one in which a pair of electrodes sandwiching a semiconductor pellet of the diode are sealed with a glass sleeve, and a specific example thereof will be described below with reference to FIG.
第5図のダイオード1において、2は半導体ペ
レツト、3,4は半導体ペレツト2を挟持する一
対の電極、5は電極3,4の外周に溶着されて半
導体ペレツト2を機密封止するガラススリーブで
ある。一対の電極3,4は、鉄ニツケル線を被覆
した銅層にボレーシヨン層を形成したジユメツト
線を所定の長さに切断したもので、各々は円柱部
3a,4aと、その一端部を圧潰により大径に形
成した頭部3b,4bより成り、円柱部3a,4
aの端面で半導体ペレツト2を挟持して、円柱部
3a,4aの外周にガラススリーブ5が溶着され
る。 In the diode 1 shown in FIG. 5, 2 is a semiconductor pellet, 3 and 4 are a pair of electrodes that sandwich the semiconductor pellet 2, and 5 is a glass sleeve that is welded to the outer periphery of the electrodes 3 and 4 to hermetically seal the semiconductor pellet 2. be. The pair of electrodes 3 and 4 are made by cutting a composite wire having a volition layer formed on a copper layer coated with an iron-nickel wire into a predetermined length, and each has a cylindrical portion 3a, 4a and one end thereof formed by crushing. It consists of heads 3b, 4b formed with a large diameter, and cylindrical parts 3a, 4.
A glass sleeve 5 is welded to the outer periphery of the cylindrical portions 3a, 4a while sandwiching the semiconductor pellet 2 between the end faces of the glass sleeve 5a.
このようなダイオード1は例えば第6図に示す
ような治具6〜8を使つて、次のように製造され
る。治具6〜8は例えばステンレス製で、下治具
6、中間治具7、上治具8で構成され、下治具6
は上面にダイオード1の一方の電極4をその頭部
4bを下にして収納保持する凹部9を有し、中間
治具7は前記凹部9と対向する部分にガラススリ
ーブ5を収納保持する穴10を有し、凹部9に電
極4を供給してから、穴10より電極4の頭部4
b上にガラススリーブ5が供給され、ガラススリ
ーブ5内に半導体ペレツト2と他方の電極3の円
柱部3aが挿入される。上治具8は下面にガラス
スリーブ5から突出する電極3の頭部3bを収納
保持する凹部11と、この凹部11の天面を貫通
するガイド穴12を有し、ガイド穴12に挿入さ
れた重り13が電極3上に載置され、電極3を半
導体ペレツト2に所定の荷重で押し付ける。この
第6図の状態で全体を加熱し、ガラススリーブ5
を上下の電極3,4の円柱部3a,4aの外周面
に溶着して、第5図のダイオード1が製造され
る。 Such a diode 1 is manufactured as follows using, for example, jigs 6 to 8 as shown in FIG. The jigs 6 to 8 are made of stainless steel, for example, and are composed of a lower jig 6, an intermediate jig 7, and an upper jig 8.
has a recess 9 on its upper surface for storing and holding one electrode 4 of the diode 1 with its head 4b facing down, and the intermediate jig 7 has a hole 10 in a portion facing the recess 9 for storing and holding the glass sleeve 5. After supplying the electrode 4 to the recess 9, the head 4 of the electrode 4 is inserted through the hole 10.
A glass sleeve 5 is supplied onto the electrode 3b, and the semiconductor pellet 2 and the cylindrical portion 3a of the other electrode 3 are inserted into the glass sleeve 5. The upper jig 8 has a recess 11 on the lower surface for storing and holding the head 3b of the electrode 3 protruding from the glass sleeve 5, and a guide hole 12 passing through the top surface of the recess 11. A weight 13 is placed on the electrode 3 and presses the electrode 3 against the semiconductor pellet 2 with a predetermined load. In this state shown in Fig. 6, heat the entire glass sleeve 5.
are welded to the outer peripheral surfaces of the cylindrical portions 3a, 4a of the upper and lower electrodes 3, 4, thereby manufacturing the diode 1 shown in FIG.
考案が解決しようとする問題点
上記ダイオード1はガラススリーブ5が電極
3,4の円柱部3a,4aの外周面に溶着する時
に、ガラススリーブ5の端面が電極3,4の頭部
3b,4bに接触して固着することがある。この
ように、ガラススリーブ5端面と電極頭部3b,
4bの端面とが固着した場合、ガラススリーブ5
と電極3,4の熱膨張係数の差でもつて封着後の
冷却時にガラススリーブ5の端面部で直径方向に
応力が発生し、この応力でガラススリーブ5の端
面部分にクラツクが入り気密性が損なわれること
があつた。Problems to be Solved by the Invention In the diode 1, when the glass sleeve 5 is welded to the outer peripheral surface of the cylindrical portions 3a, 4a of the electrodes 3, 4, the end surface of the glass sleeve 5 is It may come in contact with and stick to the surface. In this way, the end surface of the glass sleeve 5 and the electrode head 3b,
If the end surface of glass sleeve 5 is stuck,
Due to the difference in coefficient of thermal expansion between the electrodes 3 and 4, stress is generated in the diametrical direction at the end surface of the glass sleeve 5 during cooling after sealing, and this stress causes cracks in the end surface of the glass sleeve 5, resulting in poor airtightness. There were times when it was damaged.
そこで、ガラススリーブ5の封着時に、ガラス
スリーブ5の端面と電極3,4の頭部3b,4b
との間に〓間を設けて、ガラススリーブ5が電極
頭部3b,4bに直接的に接触しないようにして
いるが、これは実際問題として実行が難しく、特
に、封着時における下部の電極4上にガラススリ
ーブ5が載置される関係から、下部の電極4の頭
部4bにガラススリーブ5が強固に接着して、ガ
ラススリーブ5の下部端面部分でのクラツク発生
率が高く、これがダイオードの製造歩留り、信頼
性の改善を難しくしている。 Therefore, when sealing the glass sleeve 5, the end surface of the glass sleeve 5 and the heads 3b, 4b of the electrodes 3, 4
A space is provided between the glass sleeve 5 and the electrode heads 3b and 4b to prevent the glass sleeve 5 from directly contacting the electrode heads 3b and 4b, but this is difficult to implement in practice, especially when the lower electrode is sealed. Since the glass sleeve 5 is placed on the lower electrode 4, the glass sleeve 5 is firmly adhered to the head 4b of the lower electrode 4, resulting in a high rate of crack occurrence at the lower end surface of the glass sleeve 5, which is the cause of the diode. This makes it difficult to improve manufacturing yield and reliability.
また、頭部を有さない柱状電極であつても、電
極端面には半田層による外部電極を形成するた
め、外部電極形成後、熱が加わつた場合、半田層
とガラススリーブの熱膨張係数の差でもつて冷却
時にガラススリーブの端面部で直径方向に応力が
発生し、この応力でガラススリーブの端面部分に
クラツクが入り気密性が損なわれることがある。 In addition, even if the columnar electrode does not have a head, an external electrode is formed by a solder layer on the electrode end surface, so if heat is applied after the external electrode is formed, the coefficient of thermal expansion of the solder layer and glass sleeve will change. Due to this difference, stress is generated in the diametrical direction at the end surface of the glass sleeve during cooling, and this stress may cause cracks in the end surface of the glass sleeve, resulting in loss of airtightness.
それ故に、本考案の目的は、ガラススリーブ端
面部分でのクラツク発生を少なくした歩留り、信
頼性の良いリードレス型ダイオードを提供するに
ある。 Therefore, an object of the present invention is to provide a leadless diode with good yield and reliability in which the occurrence of cracks at the end face portion of a glass sleeve is reduced.
問題点を解決するための手段
本考案は、ガラススリーブ内に半導体ペレツト
を挟んで収納された一対の柱状電極の外周に前記
ガラススリーブを固着したダイオードにおいて、
前記ガラススリーブの端面と柱状電極の露出端面
とにアルミニウムからなるガラスとの濡れ性に劣
る導電層を形成し、その上にアルミニウムと半田
に固着しやすい中間金属層を介して半田層を形成
したことを特徴とするダイオードにて、上記目的
を達成するようにしたものである。Means for Solving the Problems The present invention provides a diode in which a glass sleeve is fixed to the outer periphery of a pair of columnar electrodes that are housed in a glass sleeve with a semiconductor pellet sandwiched therebetween.
A conductive layer made of aluminum and having poor wettability with glass was formed on the end face of the glass sleeve and the exposed end face of the columnar electrode, and a solder layer was formed thereon via an intermediate metal layer that easily adhered to aluminum and solder. This is a diode characterized in that the above object is achieved.
作 用
一対の電極の外周に封着されたガラススリーブ
の端面と、電極の端面に形成された導電層はガラ
スとの濡れ性に劣るものゆえ、この導電層はガラ
ススリーブ端面部分でのクラツク発生を防止する
作用を呈し、ダイオードの歩留りを改善させ得
る。Effect: The end face of the glass sleeve sealed around the outer periphery of the pair of electrodes and the conductive layer formed on the end face of the electrode have poor wettability with glass, so cracks may occur at the end face of the glass sleeve. This can improve the yield of diodes.
実施例
以下、本考案の一実施例を第1図乃至第4図を
参照して説明する。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 to 4.
第1図は本考案実施例のダイオード14の断面
図、第2図はその側面図で、同図において、15
はダイオードの半導体ペレツト、16,16は半
導体ペレツト15を挾持する一対のジユメツト線
による円柱状電極、17は一対の電極16,16
の外周面に溶着されて半導体ペレツト15を気密
封入するガラススリーブである。18,18はガ
ラススリーブ17の両端面と電極16,16の露
出端面とに蒸着法や溶射法等で被着形成とされた
導電層で、ガラスとの濡れ性に劣るアルミニウム
で形成される。また、19,19は導電層18,
18上に蒸着法等で積層された銅等の中間金属
層、20,20は中間金属層19,19上にメツ
キ法等で被着形成された半田層で、各部電極とし
て使用される。 FIG. 1 is a cross-sectional view of the diode 14 according to the embodiment of the present invention, and FIG. 2 is a side view thereof.
16 is a semiconductor pellet of a diode, 16 and 16 are cylindrical electrodes formed by a pair of diamond wires that sandwich the semiconductor pellet 15, and 17 is a pair of electrodes 16 and 16.
A glass sleeve is welded to the outer peripheral surface of the semiconductor pellet 15 to hermetically enclose the semiconductor pellet 15 therein. Reference numerals 18 and 18 designate conductive layers that are deposited on both end surfaces of the glass sleeve 17 and the exposed end surfaces of the electrodes 16, 16 by vapor deposition, thermal spraying, or the like, and are made of aluminum, which has poor wettability with glass. Further, 19, 19 are conductive layers 18,
An intermediate metal layer such as copper is laminated on the intermediate metal layer 18 by a vapor deposition method or the like, and 20, 20 is a solder layer formed on the intermediate metal layer 19 by a plating method or the like, and is used as an electrode for each part.
中間金属層19,19はアルミニウムに半田が
固着し難いので、アルミニウムと半田に固着し易
い銅で形成され、電極16,16の端面上におけ
るアルミニウム、銅、半田の各層の積層体を完全
なものにする。 Since solder is difficult to adhere to aluminum, the intermediate metal layers 19, 19 are formed of aluminum and copper, which easily adheres to solder, to complete the laminate of each layer of aluminum, copper, and solder on the end surfaces of the electrodes 16, 16. Make it.
ダイオード14の製造は、第3図及び第4図に
示すように行われる。即ち、ステンレス等の治具
(図示せず)を使つて、第3図に示すような半導
体ペレツト15を挾持した一対の電極16,16
の外周面にガラススリーブ17を溶着したサブア
ツセンブル体21を得る。次に、このサブアツセ
ンブル体21の両端面に導電層18,18と中間
金属層19,19を順次に積層形成して、第4図
に示すようなサブアツセンブル体22を得る。後
は、このサブアツセンブル体22の両端面に半田
層20,20を形成すれば、第1図のダイオード
14が製造される。 The diode 14 is manufactured as shown in FIGS. 3 and 4. That is, using a jig (not shown) made of stainless steel or the like, a pair of electrodes 16, 16 holding a semiconductor pellet 15 as shown in FIG.
A sub-assembled body 21 is obtained in which a glass sleeve 17 is welded to the outer peripheral surface of the sub-assembled body 21. Next, conductive layers 18, 18 and intermediate metal layers 19, 19 are sequentially laminated on both end faces of this sub-assembled body 21, thereby obtaining a sub-assembled body 22 as shown in FIG. Thereafter, by forming solder layers 20, 20 on both end faces of this sub-assembled body 22, the diode 14 shown in FIG. 1 is manufactured.
このようなダイオード製造工程の導電層18,
18以降の中間金属層19,19や半田層20,
20の製造工程において、ガラススリーブ17の
端面がガラスとの濡れ性に劣る導電層18,18
で被覆されているので、ガラススリーブ17の端
面と半田層20,20の間に熱による応力が生じ
ても、この応力は導電層18,18で吸収され、
従つて、ガラススリーブ16の端面部分にクラツ
クが入る率が大幅に減少する。 The conductive layer 18 in such a diode manufacturing process,
Intermediate metal layers 19, 19 and solder layer 20 after 18,
In the manufacturing process No. 20, the end surface of the glass sleeve 17 is coated with conductive layers 18, 18 having poor wettability with glass.
Therefore, even if stress due to heat occurs between the end surface of the glass sleeve 17 and the solder layers 20, 20, this stress is absorbed by the conductive layers 18, 18.
Therefore, the incidence of cracks in the end face portion of the glass sleeve 16 is greatly reduced.
考案の効果
本考案によれば、ガラススリーブ端面部分にお
けるクラツク発生が大幅に抑制されて、ガラスス
リーブの気密性が一段と向上し、歩留りの良いリ
ードレス型ダイオードが提供できる。Effects of the invention According to the invention, the occurrence of cracks at the end face portion of the glass sleeve is significantly suppressed, the airtightness of the glass sleeve is further improved, and a leadless diode with high yield can be provided.
さらに、アルミニウムからなる導電層は安価で
あり、かつ、ガラススリーブの端面と柱状電極と
に蒸着法や溶射法等で簡単に被着形成できる。 Furthermore, the conductive layer made of aluminum is inexpensive and can be easily formed on the end face of the glass sleeve and the columnar electrodes by vapor deposition, thermal spraying, or the like.
また、アルミニウムからなる導電層はガラスと
の濡れ性に劣りガラスクラツクを防止する機能を
持ち、半田付け性に乏しい点はその上に中間金属
層を介して形成した半田層がそれを補つているの
で実装時の半田付け性は良好である。 In addition, the conductive layer made of aluminum has poor wettability with glass and has the function of preventing glass cracks, and its poor solderability is compensated for by the solder layer formed on top of it via an intermediate metal layer. The solderability during mounting is good.
第1図及び第2図は本考案に係るダイオードの
一実施例を示す断面図及び一部切開部分を含む側
面図、第3図及び第4図は第1図のダイオードの
各製造工程での断面図である。第5図は従来のリ
ードレス型ダイオードの断面図、第6図は第5図
のダイオードを製造する封着治具の部分断面図で
ある。
15……半導体ペレツト、16……電極、17
……ガラススリーブ、18……導電層。
1 and 2 are a cross-sectional view and a side view including a partially cut-out portion showing one embodiment of the diode according to the present invention, and FIGS. 3 and 4 show the steps of manufacturing the diode shown in FIG. 1. FIG. FIG. 5 is a sectional view of a conventional leadless diode, and FIG. 6 is a partial sectional view of a sealing jig for manufacturing the diode shown in FIG. 15... Semiconductor pellet, 16... Electrode, 17
...Glass sleeve, 18...Conductive layer.
Claims (1)
納された一対の柱状電極の外周に前記ガラススリ
ーブを固着したダイオードにおいて、前記ガラス
スリーブの端面と柱状電極の露出端面とにアルミ
ニウムからなるガラスとの濡れ性に劣る導電層を
形成し、その上にアルミニウムと半田に固着しや
すい中間金属層を介して半田層を形成したことを
特徴とするダイオード。 In a diode in which the glass sleeve is fixed to the outer periphery of a pair of columnar electrodes that sandwich a semiconductor pellet in the glass sleeve, the end face of the glass sleeve and the exposed end face of the columnar electrode have wettability with glass made of aluminum. A diode characterized by forming an inferior conductive layer and forming a solder layer thereon via an intermediate metal layer that easily adheres to aluminum and solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986066634U JPH0442932Y2 (en) | 1986-04-30 | 1986-04-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986066634U JPH0442932Y2 (en) | 1986-04-30 | 1986-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62178540U JPS62178540U (en) | 1987-11-12 |
| JPH0442932Y2 true JPH0442932Y2 (en) | 1992-10-12 |
Family
ID=30904822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986066634U Expired JPH0442932Y2 (en) | 1986-04-30 | 1986-04-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442932Y2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828859A (en) * | 1981-08-13 | 1983-02-19 | Matsushita Electronics Corp | Leadless glass sealing diode |
-
1986
- 1986-04-30 JP JP1986066634U patent/JPH0442932Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62178540U (en) | 1987-11-12 |
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