JPH0442970A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To make it possible to form easily wiring layers, which are hardly disconnected, by a method wherein a gate electrode, a gate oxide film, source and drain regions and a channel region are formed on the same insulating film in the transverse direction. CONSTITUTION:An insulating film 2 is formed on a one conductivity type semiconductor substrate 1, a polycrystalline silicon film 3 is formed, a first pattern 4 is formed to use as a gate electrode and thereafter, the film 3 is oxidized and a gate oxide film 5 is formed. Then, after an opening part 6 is formed in the region of the film 2, polycrystalline silicon film 7 is formed. Then, a second pattern 8 is formed in contact to the film 5 on the sidewall of the pattern 4 and on a position covering the part 6. Then, a photosensitive resin film 9 is formed on the pattern 8 consisting of a single crystal silicon film and on one part of the film 5 and thereafter, impurity ions are implanted in the single crystal silicon film of the pattern 8 and source and drain regions 10 and 11 are formed. Then, the film 9 is removed, a second insulating film 12 is formed on the whole surface, opening parts 13, 14 and 15 are formed and metal wiring layers 16, 17 and 18 are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is a semiconductor device that can be easily integrated and laminated! and its manufacturing method.

BACKGROUND OF THE INVENTION A conventional MO3 type semiconductor device, as shown in FIG. 5A, has a gate oxide film 41 and a gate electrode 42 formed on a semiconductor substrate 40 of one conductivity type, and uses this gate electrode 42 as a mask to form a gate oxide film 41 and a gate electrode 42 on the semiconductor substrate 40. After implanting impurity ions to form source/drains 43.44, an insulating film 45 is formed on the entire surface as shown in FIG. and wiring layer 49.50.5
It formed 1.

Problems to be Solved by the Invention In the conventional MO3 type semiconductor device described above, the gate oxide film 41 and the gate electrode 4 are formed in a direction perpendicular to the semiconductor substrate surface.
2, and wiring layers 49, 50, and 51, the film thickness must be made thinner as pattern dimensions become finer.
There was a drawback that the ratio of the vertical and horizontal dimensions of the openings 46, 47, and 48, so-called aspect ratio, became large, making the wiring more likely to break. Furthermore, when the thickness of the gate electrode or wiring layer is made thinner, the resistance increases and the electrical characteristics deteriorate.

The present invention solves the above problem, and aims to provide a semiconductor device in which a gate electrode, a source/drain region, and a channel region are formed laterally on the same insulating film to reduce surface steps, and a method for manufacturing the same. That is.

Means for Solving the Problems In order to solve the above problems, the semiconductor device of the present invention includes a semiconductor crystal film pattern formed on an insulating film formed on a semiconductor substrate, and a source/drain layer formed on the semiconductor crystal film pattern. and a channel region are formed, and a gate electrode adjacent to the side wall portion of the semiconductor crystal film pattern with a gate oxide film interposed therebetween is formed on the insulating film.

Further, the method for manufacturing a semiconductor device of the present invention includes a step of forming an insulating film on a semiconductor substrate of one conductivity type, forming a polycrystalline silicon film on the insulating film, and forming a predetermined first pattern on the polycrystalline silicon film. forming a gate electrode by forming a gate electrode, forming a gate oxide film on the sidewalls of the gate electrode, selectively forming an opening in the insulating film, and further forming a single crystal silicon film on the entire surface. forming a predetermined second pattern partially in contact with the polycrystalline film pattern on the single-crystal silicon film including the opening; and a second pattern made of the single-crystal silicon film. This structure includes a step of selectively forming an impurity layer on the semiconductor device and forming a source/drain.

Further, the manufacturing method of the present invention includes a step of forming an insulating film on a semiconductor substrate of one conductivity type, forming an opening in the insulating film, further forming a polycrystalline silicon film on the entire surface, and then forming a single crystal silicon film. forming a first pattern on the single crystal silicon film including the opening, and then oxidizing the single crystal silicon film to form a gate oxide film on the sidewalls of the pattern; a step of forming a second pattern made of a silicon film to form a gate electrode; and a step of selectively implanting impurity ions into the first pattern made of the single crystal silicon film to form a source/drain. The configuration is as follows.

Operation With the above structure, the gate electrode, the gate oxide film, the source/drain region, and the channel region are formed laterally in parallel on the same plane of the insulating film formed on the semiconductor substrate. The height of the gate electrode and the source/drain regions can be made the same, and after forming a thin insulating film on the entire surface, it is possible to form the same opening in all the regions, and it is also possible to Since there is no difference in level, it is possible to easily form fine wiring without disconnection.

Example An embodiment of the present invention will be described below with reference to the drawings.

1 and 2 are a sectional view and a top view illustrating a method of manufacturing a semiconductor device 1 according to a first embodiment of the present invention. In FIG. 1, an insulating film 2 such as a silicon dioxide film is formed on a semiconductor substrate 1 of one conductivity type, and a first polycrystalline silicon film 3 is formed on the entire surface (FIG. 1(A)). Next, a predetermined first pattern 4 is formed on the first polycrystalline silicon film 3 to form a gate electrode, and then the polycrystalline silicon film of the first pattern 4 is oxidized to form a gate oxide film 5. (Figure 1 (8)
).

Next, after forming an opening 6 in a region of the insulating film 2 that is not covered with the first pattern 4 made of the first polycrystalline silicon film, a second polycrystalline silicon film 7 is formed on the entire surface. form (Figure 1 (
C)). Next, the l/- laser beam etc. are applied to the second polycrystalline @
After the film 7 is irradiated to form a single crystal, a first pattern is applied to the sidewall of the first pattern 4 made of the first polycrystalline silicon film, and then the oxide film 5 is aligned with the oxide film 5 and at a position covering the opening 6. 2 patterns 8 are formed (FIG. 1(D)).

Next, in FIG. 2, a photosensitive resin film 9 is formed on a second pattern 8 made of a single crystal silicon film and a part of the gate oxide film 5. As a mask, impurity ions are poured into the single crystal silicon film of the second pattern 8 to form source/drain regions io and il (FIG. 2 ([)). Next, the photosensitive resin film 9 is removed 1.
Then, after forming the second insulating film 12 on the entire surface and selectively forming openings M13, 14, and 15, metal wiring M16.1 is formed.
7.18 (Figure 2 (E)). ,-by
An MO5 type semiconductor device is obtained in which a gate ti, a source/drain region, a channel region, etc. are formed on the same plane J- of the insulating film 2.

3 and 4 are a cross-sectional view and a top view illustrating a method of manufacturing a semiconductor device according to a second embodiment of the invention. After forming an insulating film 21 such as a silicon dioxide film, openings 22 are selectively formed in the insulating film 21.1. The semiconductor substrate 20 is exposed, and then the entire surface is covered with polycrystalline silicon! After forming 123, laser light is irradiated 1. to convert it into a single crystal silicon film (
Figure 3 (8)). Next, the opening 22 is formed in the single crystal silicon film.
After forming a predetermined first pattern 24 including a first pattern 24, a gate oxide film 25 is formed on the pattern 24 made of the single crystal film (FIG. 3(B)). Next, a polycrystalline silicon film is formed on the entire surface, and a second pattern 26 is formed in contact with the gate oxide film 25 formed on the side wall of the single crystal silicon film of the first pattern 24 to form a gate electrode. (Fig. 3 fc)).

Next, in FIG. 4, impurity ions are selectively implanted into the first pattern 24 made of a single crystal silicon film to form source/drain regions 27 and 28, as in the first embodiment. Figure 4(D)). Next, after forming an insulating film 29 on the entire surface and selectively forming openings 30.31° 32,
Metal wiring layers 33, 34, 35 are formed (Fig. 4 ([)
). As a result, the gate t' is placed on the same plane F of the insulating film 21.
An MO8 type semiconductor device 1 having a source/drain region and a channel region is obtained.

Effects of the Invention As described above, according to the present invention, the wiring layer and the gate electrode are formed laterally on the same insulating film, the oxide film on the gate electrode, the source/drain region, and the channel region are formed on the gate electrode. The openings for connection with the electrode and the source train tti have the same aspic ratio of 1 to 1, and there are few surface steps, and a wiring layer with few disconnections can be easily formed.

Further, the surface is flat, and a semiconductor device can be easily formed in a $ layer structure.

[Brief explanation of drawings]

1 and 2 are structural cross-sectional views and plan views for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention, and FIGS. 3 and 4 are a structural cross-sectional view and a plan view for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 5 is a structural cross-sectional view and a plan view for explaining a method of manufacturing a semiconductor device according to the prior art. FIG. 1.20...Semiconductor substrate, 2.21...Insulating film, 4
．． 26...Gate electrode, 5.25...Del-oxide film, 8,24...Single crystal silicon film pattern, 10.11
．． 27.28... Source/drain region. Agent Yoshihiro Morimoto 2nd floor - CN l'n Mari) 1 (3rd floor in the heart!!A)

Claims (1)

[Claims] 1. A gate electrode and a semiconductor crystal film adjacent to the gate electrode via a gate oxide film are provided in parallel on the same plane of the insulating film, and a source/drain region and a semiconductor crystal film are provided in parallel on the same plane of the insulating film. A semiconductor device with a channel region formed. 2. Forming an insulating film on a semiconductor substrate of one conductivity type;
forming a polycrystalline silicon film thereon; forming a gate electrode by forming a predetermined first pattern on the polycrystalline silicon film; and forming a gate oxide film on the sidewalls of the gate electrode. , a step of selectively forming an opening in the insulating film and further forming a single crystal silicon film on the entire surface, and a part of the single crystal silicon film including the opening being in contact with the polycrystalline film pattern; A method for manufacturing a semiconductor device, comprising: forming a predetermined second pattern made of the single crystal silicon film, and selectively forming an impurity layer on the second pattern made of the single crystal silicon film to form a source/drain. 3. Forming an insulating film on a semiconductor substrate of one conductivity type;
After forming an opening in the insulating film and further forming a polycrystalline silicon film on the entire surface, a step of monocrystallizing the film, and forming a first pattern on the single crystal silicon film including the opening, oxidizing to form a gate oxide film on the sidewalls of the pattern; forming a second pattern made of a polycrystalline silicon film in contact with the first pattern to form a gate electrode;
A method for manufacturing a semiconductor device, comprising the step of selectively implanting impurity ions into the first pattern made of the single crystal silicon film to form sources and drains.