JPH0442976A - Manufacture of amorphous silicon photodetector - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for manufacturing an amorphous silicon light receiving device with simplified electrode formation.

(Prior Art) Figure 3 (a) to (f) are schematic cross-sectional views showing an example of the manufacturing process of a photodiode section that is a main part of a color sensor, which is a type of amorphous silicon light receiving device. First, as shown in FIG. 3(a), a transparent electrode 2 is formed on the surface of a transparent material such as a glass substrate 10 by electron beam evaporation or sputtering.

Next, as shown in FIG. 3(b), a p layer and an i layer are formed on the surface of the transparent electrode 20 by plasma CVD.

An amorphous silicon layer 3 is formed by laminating n layers.

Color-1 for the three primary colors of red @), green (G), and blue)
! :7 In order to obtain uniformity, this amorphous silicon layer 3 is divided into three parts in a later process.

Next, as shown in FIG. 3(e), a metal film 4 that will become an electrode on one side is formed on the surface of the amorphous silicon layer 3 by vacuum evaporation Kx. This will also be divided into three parts in a later step.

Next, as shown in FIG. 4(d), metal 3I4! I
C, photoetching is performed, and patterning is performed for each of R, G, BtZ), and each back metal electrode 4-1. 4-2. Form 4-3.

Next, as shown in Figure (e), the amorphous silicon layer 3 is photo-etched and the sRtG,B
Patterning is performed on each of them to form respective amorphous silicon layers 3-1e3-2.3-3.

Next, as shown in FIG. 3(f), necessary portions are covered with a metal mask, and a common electrode 5 is formed at the end of the transparent electrode 2 by vacuum evaporation.

Finally, although not shown, R, G, and B color filters are attached to appropriate locations on the surface of the glass substrate 10.

(Problem to be Solved by the Invention) According to the conventional manufacturing method, the vacuum-deposited back metal XO
Since patterning of the back electrode was performed by photo-etching and then patterning of the amorphous silicon layer was performed by photo-etching, it was necessary to perform vacuum evaporation again to form a common electrode at the end of the transparent electrode.
Manufacturing costs rose due to the increased number of steps.

(Means for solving the problem) The amorphous silicon layer is photo-etched first, and then the metal film vacuum-deposited on the entire surface is photo-etched to simultaneously form the individual back electrodes and the electrodes on the front surface of the transparent electrode. .

(Function) Since the vacuum evaporation process only needs to be done once, manufacturing is simplified.

(Example) Figures 1(a) to (e) show examples of the dormitory of the present invention, and the third
It is a schematic sectional view showing an example of the manufacturing process of the photodiode part of an amorphous silicon color sensor as shown in Drawings (a) - (f).

First, as shown in FIG. 1(a), a transparent electrode 2 is formed on the surface of a glass substrate 1 by an electron beam evaporation method, a sputtering method, a CVD method, a spray method, or the like. This is similar to Fig. 3 (m).

Next, as shown in FIG. 1(b), two layers 21 are formed on the transparent electrode 20 by plasma CVD.

An amorphous silicon layer 3 is formed by laminating n layers.

This is also similar to Figure 3).

Next, as shown in FIG. 1(c), the amorphous silicon layer 3 is photoetched and patterned to form amorphous silicon layers 3-1. 3-2.3-3 is formed.

Next, as shown in FIG. 1(d), a metal film 4 of nickel, silver, etc. is formed over the entire surface by vacuum evaporation.

Next, as shown in FIG. 1(e), the metal film 4 is photoetched and patterned, and the back surface electrodes are formed on the surfaces of the divided amorphous silicon layers 3-11, 3-2, and 3-3. @4-1.4-2°4-3 are formed, and a common electrode WiS is formed at the end of the transparent electrode 2.

As described above, photodiodes corresponding to R, G, and B are formed on one substrate.

FIG. 2 (1) to (j) are other embodiments in which multivalued photodiodes are formed on 6 and 11 substrates.
It is a schematic sectional view of the process of dividing into another 7-electrode diode. This photodiode is used, for example, in a visible light sensor.

First, the process of @2 diagram ω9 can) and (c)-ω) is gl
ii Since the steps are the same as those in Figures (a), (b), (c), and (d), detailed explanation will be omitted. However, the divided amorphous silicon layer 3-1. 3-2.3-3
does not correspond to Rr G+B, but is for visible light, and since individual electrodes are provided between each,
It is necessary to provide a certain distance.

After the step shown in FIG. 2(d) is completed, the metal film 4 is photoetched and patterned to form the divided amorphous silicon layer 3-1. as shown in FIG. 2(e).
3-2. On the surface of 3-3, each back electrode 4-1.
4-2. 4-3, and electrodes 5-1.5-2°5-3 are formed on the surface of the transparent electrode 2 adjacent to each of the divided amorphous silicon layers.

Next, as shown in FIG. 2(f), each voltage [5-IT5
By cutting the glass substrate 1 and the transparent electrode 2 on the right side of -2.5-3), the glass substrate 1 is divided into three glass substrates 1-1.1-2.1-3] , transparent electrode 243
Divided transparent electrode 2-1゜2-2.2-3 and Nashi, 3
visible light sensors are obtained. Any a number can be obtained depending on the dimensions of the glass substrate.

(Effects of the Invention) According to the present invention, one step of the vacuum evaporation process can be omitted, so the manufacturing process of an amorphous silicon light receiving device can be simplified and the manufacturing cost can be reduced.

[Brief explanation of the drawing]

FIGS. 1(C) to (E) are schematic cross-sectional views of each process in one embodiment of the present invention, and FIGS. 2(a) to (F) are schematic cross-sectional views of each process in another embodiment of the present invention. , FIGS. 3b) to 3(f) are schematic cross-sectional views of each step of the conventional manufacturing method. 1, 1-L 1-21 1-3... glass substrate,
2゜2-1. 2-2. 2-3...Transparent electrode, 3
t3 L3-2. 3-3...Amorphous silicon layer, 4° metal film, 4-1. 4-2.4-3... Back electrode, 5゜5-1.5-2.5-3... Electrode

Claims (1)

[Claims] 1. A step of forming a transparent electrode on the surface of the insulating substrate, a step of forming an amorphous silicon layer on the surface, a step of dividing the amorphous silicon layer, and a step of forming a metal on the surface of the transparent electrode and the divided amorphous silicon layer. A method for manufacturing an amorphous silicon light receiving device, which includes a step of forming a film and a step of patterning this metal film to form a required electrode.