JPH0443050A - Manufacturing method of thermal print head - Google Patents

Manufacturing method of thermal print head

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Publication number
JPH0443050A
JPH0443050A JP14978790A JP14978790A JPH0443050A JP H0443050 A JPH0443050 A JP H0443050A JP 14978790 A JP14978790 A JP 14978790A JP 14978790 A JP14978790 A JP 14978790A JP H0443050 A JPH0443050 A JP H0443050A
Authority
JP
Japan
Prior art keywords
thin film
substrate
print head
film
thermal print
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14978790A
Other languages
Japanese (ja)
Inventor
Jiro Muto
武藤 次郎
Akihiko Abe
阿部 昭彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP14978790A priority Critical patent/JPH0443050A/en
Publication of JPH0443050A publication Critical patent/JPH0443050A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用性!!?] この発明は感熱印字を行なうサーマル印字ヘッドの製造
方法に関する。
[Detailed description of the invention] [Industrial applicability! ! ? ] The present invention relates to a method of manufacturing a thermal print head that performs thermal printing.

[発明が解決しようとする課題] しかし、上述したサーマル印字ヘッドにおいては、窒化
タンタル、酸化ルテニウム等の物質をスパッタや蒸着に
より被着して薄膜発熱抵抗層を形成しているので、成−
時に基板が150〜200℃程度まで加熱される。その
ため、熱膨張率の高い基板では熱変形を起すので、耐熱
性の基板、例えばセラミック基板を用いなければならず
、基板のコストが高くなるという間開がある。
[Problems to be Solved by the Invention] However, in the above-mentioned thermal print head, the thin film heating resistor layer is formed by depositing a substance such as tantalum nitride or ruthenium oxide by sputtering or vapor deposition.
Sometimes the substrate is heated to about 150 to 200°C. Therefore, since a substrate with a high coefficient of thermal expansion causes thermal deformation, a heat-resistant substrate such as a ceramic substrate must be used, which increases the cost of the substrate.

この発明の目的は、耐熱性を有する高価な基板を必要と
せず、安価な樹脂基板にも均一な膜厚で薄膜発熱抵抗層
を形成することのできるサーマル印字ヘッドの製造方法
を提供することである。
An object of the present invention is to provide a method for manufacturing a thermal print head that does not require an expensive heat-resistant substrate and can form a thin-film heating resistor layer with a uniform thickness even on an inexpensive resin substrate. be.

[!IIIを解決するための手段] この発明は上述した目的を達成するために、樹脂基板の
他面側を冷却しながらスパッタ、蒸着等の薄膜形成装置
を用いて薄膜発熱抵抗層を形成することにある。
[! Means for Solving III] In order to achieve the above-mentioned object, the present invention involves forming a thin film heating resistor layer using a thin film forming apparatus such as sputtering or vapor deposition while cooling the other side of the resin substrate. be.

[作用] この発明によれば、樹脂基板の他面側を冷却しながらス
パー2り、蒸着等の薄膜形成装置を用いて薄膜発熱抵抗
層を形成するので、耐熱性を有する高価な基板を用いる
必要がなく、ポリイミドやポリエステル等の安価な樹脂
基板を用いても、fI等熱変形を生ずることがなく、均
一な膜厚で薄膜発熱抵抗層を形成することができる。
[Function] According to the present invention, a thin film heating resistance layer is formed using a thin film forming apparatus such as spar 2 or vapor deposition while cooling the other side of the resin substrate, so an expensive substrate with heat resistance is used. Even if an inexpensive resin substrate such as polyimide or polyester is used, thermal deformation such as fI does not occur, and a thin film heat generating resistor layer can be formed with a uniform thickness.

[実施例] 以下、第1図〜第6図を参照して、この発明の詳細な説
明する。
[Example] Hereinafter, the present invention will be described in detail with reference to FIGS. 1 to 6.

第1図〜第5図はサーマル印字ヘッドの製造工程を示す
、まず、第1図に示すように、フィルム基板lを用意す
る。このフィルム基板1はポリイミドやポリエステル等
の合成樹脂よりなる。このフィルム基板l上に選択電極
2および共通電極3を離間対向させて形成する。この場
合1選択電極2および共通電極3は第5図に示すように
、フィルム基板lの幅方向の全域に亘って多数対向して
配列されている。また、各電極11.12は、CuやA
1.もしくはその表面にNi、^U等のメツキを施した
単層または多層の金属屑よりなり、その膜厚は10gm
程度と比較的厚く形成することにより、その幅が30〜
70uLm程度と小さい場合にも大電流の導通を可能と
している。なお、選択電極2 tL、それぞれ細い帯状
に形成され、これらが等間隔、例えば16ドy ) /
 m mであれば、82.5pm程度の間隔で平行に配
列されている。共通電極3は櫛型に形成されている。す
なわち、選択電極2側の一端部5は選択電極2と同じ形
状に形成され、選択電極2の各端部4から所定間隔だけ
離れて配列され、他端部6は上述した一端部5の配列方
向に沿って幅広の帯状に形成され、各一端部5が接続さ
れている。そして、選択電極2と共通電極3の対向する
端wA4.5間にポリイミド系の接着剤8を各電極2,
3の配列方向に沿って帯状に塗牟する。
1 to 5 show the manufacturing process of a thermal print head. First, as shown in FIG. 1, a film substrate 1 is prepared. This film substrate 1 is made of synthetic resin such as polyimide or polyester. On this film substrate l, a selection electrode 2 and a common electrode 3 are formed so as to be spaced apart and facing each other. In this case, as shown in FIG. 5, a large number of one selection electrodes 2 and common electrodes 3 are arranged facing each other over the entire width of the film substrate l. Further, each electrode 11.12 is made of Cu or A.
1. Or it consists of a single layer or multilayer metal scrap whose surface is plated with Ni, ^U, etc., and the film thickness is 10 gm.
By forming it relatively thickly, the width can be increased to 30~
Even when the current is as small as about 70 uLm, it is possible to conduct a large current. Note that the selection electrodes 2tL are each formed in a thin strip shape, and these are equally spaced, for example, 16 dots)/
mm, they are arranged in parallel at intervals of about 82.5 pm. The common electrode 3 is formed into a comb shape. That is, one end 5 on the selection electrode 2 side is formed in the same shape as the selection electrode 2 and is arranged at a predetermined distance from each end 4 of the selection electrode 2, and the other end 6 is arranged in the same manner as the one end 5 described above. It is formed into a wide band shape along the direction, and one end portion 5 of each is connected. Then, a polyimide adhesive 8 is applied to each electrode 2, between the opposing ends wA4.5 of the selection electrode 2 and the common electrode 3.
3. Apply it in a band shape along the arrangement direction of 3.

次に、第2図に示すように、太さが50pm程度のファ
イバ7を接着剤8によりフィルム基板lに接着する。す
ると、ファイバ7はその上部が各電極2.3の上面より
も上方に突出して設けられる。このとき、ファイバ7は
断面が円形状であるから、ファイバ7が接着剤8を押圧
すると、余分な接着剤8がファイバ7の外周面に沿って
競上がる。これにより、ファイバ7の外周と各電極2.
3の端部4.5との間に接着剤8が緩やかに傾斜して設
けられることになる。なお、ファイバlはガラス、石英
、樹脂等からなる線状のものであり、透明であっても、
透明でなくてもよい、また、接着剤8は熱ストレスに対
して信頼性の良いポリイミド系のものが望ましいが、こ
れに限られない。
Next, as shown in FIG. 2, a fiber 7 having a thickness of about 50 pm is bonded to the film substrate l using an adhesive 8. Then, the fiber 7 is provided so that its upper part protrudes above the upper surface of each electrode 2.3. At this time, since the fiber 7 has a circular cross section, when the fiber 7 presses the adhesive 8, the excess adhesive 8 rises along the outer peripheral surface of the fiber 7. As a result, the outer periphery of the fiber 7 and each electrode 2.
3 and the end 4.5 of the adhesive 8 is provided with a gentle slope. Note that the fiber l is a linear material made of glass, quartz, resin, etc., and even if it is transparent,
The adhesive 8 does not need to be transparent, and it is preferable that the adhesive 8 is made of polyimide, which has good reliability against heat stress, but is not limited thereto.

この後、#着剤8を乾燥した上、ファイバ7上にTaN
、Ta2N等の窒化タンタルよりなる薄膜発熱抵抗層9
を1000λ程度の膜厚に形成する。この場合には、メ
タルマスクを用いて形成する方法とフォトリングラフィ
技術により形成する2通りの方法がある。
After that, #adhesive 8 was dried and TaN was applied on the fiber 7.
, a thin film heating resistance layer 9 made of tantalum nitride such as Ta2N.
is formed to a film thickness of about 1000λ. In this case, there are two methods: one using a metal mask and the other using photolithography.

前者の方法は、第3図に示すように、フィルム基板l上
にメタルマスク10を配置して窒化タンタルを被着する
方法である。この場合、メタルマスク10には予め薄膜
発熱抵抗層9と対応する箇所に帯状の開口部11が形成
されている。したがって、このメタルマスクlOをフィ
ルム基板l上に配置すると、薄膜発熱抵抗層9の形成領
域のみが露出することとなる。この状態で、窒化タンタ
ルをスパッタ法により被着した上、メタルマスクlOを
取り除くと、メタルマスク1oの開口部11と対応する
箇所にのみ窒化タンタルが電極2.3の配列方向に沿っ
て帯状に被着される。この 結果、第5図に示すように
、薄膜発熱抵抗層9がファイバ7上を乗り越え、その両
側端が電極2.3の端部4.5に接続されて形成される
。この薄膜発熱抵抗層9は特にその発熱部分がファイバ
7により他の部分よりも上方に均一な高さで突出する。
The former method, as shown in FIG. 3, is a method in which a metal mask 10 is placed on a film substrate l and tantalum nitride is deposited thereon. In this case, strip-shaped openings 11 are previously formed in the metal mask 10 at locations corresponding to the thin film heat generating resistor layer 9. Therefore, when this metal mask lO is placed on the film substrate l, only the region where the thin film heat generating resistor layer 9 is formed will be exposed. In this state, when tantalum nitride is deposited by sputtering and the metal mask 1O is removed, tantalum nitride is formed in a band shape along the arrangement direction of the electrodes 2.3 only at the locations corresponding to the openings 11 of the metal mask 1o. be coated. As a result, as shown in FIG. 5, a thin film heat generating resistor layer 9 is formed over the fiber 7 and its both ends are connected to the end portion 4.5 of the electrode 2.3. In particular, the heat generating portion of the thin film heat generating resistor layer 9 is projected upwardly by the fiber 7 at a uniform height compared to other portions.

なお、窒化タンタルが被着される際には、ファイバ7と
各電極2.3の間に接着剤8が緩やかに傾斜して設けら
れているので、薄膜発熱抵抗層9が薄くても断線するこ
となく良好に形成される。
Note that when tantalum nitride is deposited, since the adhesive 8 is provided between the fiber 7 and each electrode 2.3 with a gentle slope, disconnection will occur even if the thin film heating resistance layer 9 is thin. It is well formed without any problems.

また、後者の方法は、フィルム基板lの全表面に窒化タ
ンタルをスパッタ法により被着し、その表面にレジスト
を塗布し、このレジストをフォトリングラフィ技術によ
りパターン形成し、このレジストをマスクとして窒化タ
ンタルの被膜をエツチングし、不要な部分を除去する方
法である。この方法でも、上述と同様に、薄膜発熱抵抗
層9を形成することができる。
In addition, in the latter method, tantalum nitride is deposited on the entire surface of the film substrate l by sputtering, a resist is applied to the surface, a pattern is formed on this resist by photolithography technology, and the nitride is nitrided using this resist as a mask. This method involves etching the tantalum film and removing unnecessary parts. Also with this method, the thin film heating resistance layer 9 can be formed in the same manner as described above.

ここで重要なことは、いずれの方法においても、窒化タ
ンタルをスパッタ法により被着する際には、フィルム基
板lを冷却装置12で冷却しながら行なうことである。
What is important here is that in either method, when depositing tantalum nitride by sputtering, the film substrate 1 is cooled with the cooling device 12.

この冷却装置12は、フィルム基板1を載置するステン
レス製の載置台13中に冷水等の冷却液14が流通する
流路15を形成した構造のものである。この冷却装置1
2を用いた実験では、冷却を行なわない場合にはフィル
ム基板1が150〜200℃前後まで加熱されたが、冷
却を行なった場合には50〜60℃前後となり、フィル
ム基板1に何等熱変形を生ずることがなく、窒化タンタ
ルを均一かつ平坦にJtlIIすることができた。
This cooling device 12 has a structure in which a flow path 15 through which a cooling liquid 14 such as cold water flows is formed in a stainless steel mounting table 13 on which the film substrate 1 is placed. This cooling device 1
In an experiment using 2, the film substrate 1 was heated to around 150 to 200°C without cooling, but when cooling was performed, the temperature was around 50 to 60°C, and there was no thermal deformation in the film substrate 1. It was possible to uniformly and flatly JtlII the tantalum nitride without causing any occurrence of .

最後に、第4図に示すように、全表面に薄膜発熱抵抗層
9および電極2.3を保護する保護層16を設ける。こ
の保護層16は単層構造でもよいが、 5i02等の耐
湿用保護膜17とTa205等の耐摩耗用保護111g
の2M!構造が望ましい、この2層構造の保護層16を
形成する場合には、まず、全表面ニSiO2ヲ熱酸化1
’jlヤCV D (Cbe+5icalVapor 
Deposition)法により成長させて耐湿用保護
膜17を形成し、この後その表面にTa205をCVD
法により成長させて耐摩耗用保護膜18を形成すればよ
い、この場合にも、冷却装置112で冷却しながら各保
護817.18を形成するので、上述と同様、熱ストレ
スを抑え、各保護膜17.18の形成を安定した状態で
行なうことができる。
Finally, as shown in FIG. 4, a protective layer 16 is provided on the entire surface to protect the thin film heating resistor layer 9 and the electrodes 2.3. This protective layer 16 may have a single-layer structure, but a moisture-resistant protective film 17 such as 5i02 and a wear-resistant protective film 111g such as Ta205 etc.
2M! When forming the protective layer 16 with this two-layer structure, which has a desirable structure, first, thermal oxidation 1 of SiO2 is applied to the entire surface.
'jlya CV D (Cbe+5ical Vapor
A moisture-resistant protective film 17 is formed by CVD deposition method, and then Ta205 is deposited on its surface by CVD.
The wear-resistant protective film 18 can be formed by growing the wear-resistant protective film 18 by a method of growth.In this case as well, since each protection film 817, 18 is formed while being cooled by the cooling device 112, thermal stress can be suppressed and each protection film 18 can be formed by The films 17 and 18 can be formed in a stable manner.

このようなサーマル印字ヘッドでは、薄膜発熱抵抗層9
の発熱部分と対応する箇所の保護膜16が、その周囲全
域の保護膜16よりも充分に突出して形成されるため、
薄膜発熱抵抗層9の発熱部分の記録紙等に対する紙当た
りが良くなり、印字品質が良く、鮮明な印字を行なうこ
とが可能となる。
In such a thermal print head, a thin film heating resistor layer 9 is used.
Since the protective film 16 at the location corresponding to the heat generating part is formed to sufficiently protrude from the protective film 16 in the entire surrounding area,
The heat-generating portion of the thin-film heat-generating resistor layer 9 has better contact with the recording paper, etc., making it possible to print with good quality and clarity.

なお、この発明は上述した実施例に限定されるものでは
ない6例えば、薄膜発熱抵抗層9は窒化タンタルである
必要はなく、酸化ルテニウム(RL102)、あるいは
ポリシリコンにイオンをドープしたもの等でもよく、そ
の形状は帯状である必要はなく1選択電極2と共通電極
30対向間ごとに等間隔で配列されていてもよい、しか
も、薄膜発熱抵抗層9はファイバ7上に直接形成する必
要はなく、ファイバ7上に例えば’; i07 ”ey
ポリイミド薄膜等の絶!i)暦を設けた上、形成しても
よい、また、選択電極2および共通電極3はフィルム基
板1にファイバ7を接着した後に形成してもよい。
Note that the present invention is not limited to the above-mentioned embodiments6. For example, the thin film heating resistance layer 9 need not be made of tantalum nitride, but may also be made of ruthenium oxide (RL102) or polysilicon doped with ions. Often, the shape thereof does not have to be strip-like, and may be arranged at equal intervals between the one selection electrode 2 and the common electrode 30 facing each other. Moreover, the thin film heating resistance layer 9 does not need to be formed directly on the fiber 7. For example '; i07 ``ey
Absolutely no polyimide thin film! i) The selection electrode 2 and the common electrode 3 may be formed after providing a calendar, or the selection electrode 2 and the common electrode 3 may be formed after the fiber 7 is bonded to the film substrate 1.

この場合には、第6図に示すようにファイバ7上に選択
電極2と共通電極3の各端部4.5を交互に配列形成し
、その上に薄膜発熱抵抗層9を電極2.3に沿って帯状
に形成すればよい、このときの発熱部分は選択電極2と
共通電極3の間の薄膜発熱抵抗層9が発熱部分となる。
In this case, as shown in FIG. 6, the ends 4.5 of the selection electrode 2 and the common electrode 3 are alternately arranged on the fiber 7, and the thin film heat generating resistor layer 9 is placed on the electrodes 2.3. The heat generating portion in this case is the thin film heat generating resistor layer 9 between the selection electrode 2 and the common electrode 3.

さらに、薄膜発熱抵抗層9を突出させるファイバ7は、
フィルム基板lに溝を設けて搭載すれば、安定して設け
ることができ、しかも必ずしもファイバ7を用いる必要
はなく、5i02、SiN等の絶縁物質を突状に成長さ
せた突状絶縁層でもよく、細部において種々変形するこ
とが可能である。
Furthermore, the fiber 7 from which the thin film heating resistance layer 9 protrudes is
If the film substrate l is provided with a groove and mounted, it can be stably provided, and it is not necessarily necessary to use the fiber 7, but a protruding insulating layer made by growing an insulating material such as 5i02 or SiN in a protruding shape may also be used. , various modifications can be made in details.

図の状態における要部平面図、Is6図はサーマル印字
ヘッドの変形例を示す要部平面図である。
Figure Is6 is a plan view of the main part in the state shown in the figure, and is a plan view of the main part showing a modified example of the thermal print head.

[発明の効果] 以上詳細に説明したように、この発明によれば、樹脂基
板の他面側を冷却しながらスパッタ。
[Effects of the Invention] As described above in detail, according to the present invention, sputtering is performed while cooling the other side of the resin substrate.

蒸着等の薄膜形成装置を用いて薄膜発熱抵抗層を形成す
るので、耐熱性を有する高価な基板を用いる必要がなく
、ポリイミドやポリエステル等の安価な樹脂基板を用い
ても、何等熱変形を生ずることがなく、均一な膜厚で薄
膜発熱抵抗層を形成することができる。
Since the thin film heating resistance layer is formed using a thin film forming device such as vapor deposition, there is no need to use an expensive heat-resistant substrate, and even if an inexpensive resin substrate such as polyimide or polyester is used, no thermal deformation will occur. Therefore, it is possible to form a thin heat generating resistor layer with a uniform thickness.

l・・・・・・フィルム基板、2・・・・・・選択電極
、3・・・・・・共通電極、9・・・・・・薄膜発熱抵
抗層、12・・・・・・冷却装置。
l...Film substrate, 2...Selection electrode, 3...Common electrode, 9...Thin film heating resistance layer, 12...Cooling Device.

カシオ計算機株式会社 !ス・Casio Computer Co., Ltd. ! vinegar·

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第6図はこの発明の実施例を示し、第1図はフ
ィルム基板上に電極および接着剤を設けた状態の断面図
、第2図はファイバを接着した状態の断面図、第3図は
冷却しながら薄膜発熱抵抗層を形成した状態の断面図、
第4図は冷却しながら保護層を形成した状態の断面図、
第5図は第3第 図 第4図
1 to 6 show examples of the present invention. FIG. 1 is a cross-sectional view of the state in which electrodes and adhesive are provided on the film substrate, FIG. 2 is a cross-sectional view of the state in which fibers are bonded, and FIG. Figure 3 is a cross-sectional view of a thin film heating resistor layer formed while cooling.
Figure 4 is a cross-sectional view of the state in which a protective layer is formed while cooling.
Figure 5 is 3rd figure, 4th figure

Claims (1)

【特許請求の範囲】 樹脂基板上に、選択電極、共通電極、および両電極に接
続された薄膜発熱抵抗層を有するサーマル印字ヘッドを
製造する方法において、 前記樹脂基板の他面側を冷却しながらスパッタ、蒸着等
の薄膜形成装置を用いて前記薄膜発熱抵抗層を形成する
ことを特徴とするサーマル印字ヘッドの製造方法。
[Claims] A method for manufacturing a thermal print head having a selective electrode, a common electrode, and a thin film heat generating resistive layer connected to both electrodes on a resin substrate, the method comprising: cooling the other side of the resin substrate; A method for manufacturing a thermal print head, characterized in that the thin film heat generating resistive layer is formed using a thin film forming apparatus such as sputtering or vapor deposition.
JP14978790A 1990-06-11 1990-06-11 Manufacturing method of thermal print head Pending JPH0443050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14978790A JPH0443050A (en) 1990-06-11 1990-06-11 Manufacturing method of thermal print head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14978790A JPH0443050A (en) 1990-06-11 1990-06-11 Manufacturing method of thermal print head

Publications (1)

Publication Number Publication Date
JPH0443050A true JPH0443050A (en) 1992-02-13

Family

ID=15482707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14978790A Pending JPH0443050A (en) 1990-06-11 1990-06-11 Manufacturing method of thermal print head

Country Status (1)

Country Link
JP (1) JPH0443050A (en)

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