JPH0443324B2 - - Google Patents
Info
- Publication number
- JPH0443324B2 JPH0443324B2 JP23811883A JP23811883A JPH0443324B2 JP H0443324 B2 JPH0443324 B2 JP H0443324B2 JP 23811883 A JP23811883 A JP 23811883A JP 23811883 A JP23811883 A JP 23811883A JP H0443324 B2 JPH0443324 B2 JP H0443324B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- magnetic recording
- thin film
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 23
- 230000005291 magnetic effect Effects 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 16
- 230000005294 ferromagnetic effect Effects 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910020630 Co Ni Inorganic materials 0.000 description 3
- 229910002440 Co–Ni Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910020517 Co—Ti Inorganic materials 0.000 description 1
- 229910020515 Co—W Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018553 Ni—O Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
産業上の利用分野
本発明は高密度磁気記録に適する強磁性金属薄
膜を磁気記録層とする磁気記録媒体の製造方法に
関する。
従来例の構成とその問題点
近年高密度記録への要求が高まると共に、磁気
記録層を強磁性金属薄膜で構成した磁気記録媒体
の実用化が各方面で活発に検討されはじめてい
る。
かかる媒体は、高密度記録を目指すのであるか
ら、短波長ではスペース損失が再生出力の低下に
支配的に作用するので、おのずと磁気記録層表面
は平滑になつていく。従つて磁気ヘツドとの高速
摺動はもとより、走行機構部材との摩擦が大きく
なり、対策が必要になる。従つて第1図に示した
ように、高分子等の基板の上に、真空蒸着法、ス
パツタリング法、湿式めつき法等の方法で形成し
た、Co−Ni−O、Co−Ni−P、Co−Cr、等の
強磁性金属薄膜から成る磁気記録層2を配した上
に、保護層3を配した構成の磁気記録媒体4が一
般的な構造となる。
ここで保護層は、前述したようにスペース損失
の制約から1000〓以下好ましくは100Å〜200Å程
度でその目的を果すことが必要な条件となり、湿
式塗布法により、脂肪酸、脂肪酸アミド、金属石
けん、脂肪酸エステル、シリコンオイル、フツ素
オイル等を薄く塗布形成することや、テフロンを
ターゲツトにしてスパツタリング法で薄膜化する
こと等が検討されているが、温度湿度を変えたい
ろいろな環境で充分な走行性能を確保するものは
ない。
特にシリコーン系のプラズマ重合膜等は性能は
満足できるが、厚み1000Å程度と厚く、改良が望
まれていた。
発明の目的
本発明はプラズマ重合膜の利点を薄膜領域でも
発揮できる製造方法を提供し、実用的な強磁性金
属薄膜を磁気記録層とする磁気記録媒体の製造を
可能にすることを目的とする。
発明の構成
本発明は、移動する強磁性金属薄膜上にプラズ
マ重合膜を形成する際、前記薄膜の移動方向と、
プラズマ吹き付け方向が相対することを特徴とす
るもので、200Å以下のスペース損失の無視でき
る厚み領域で保護膜としての効果の充分なものを
得ることのできるものである。
実施例の説明
以下本発明の実施例について図面を参照しなが
ら説明する。
第2図は本発明の方法を実施するのに用いた、
保護層形成装置の要部構成図である。
強磁性金属薄膜5(勿論、これは基板上に形成
されたものであるが説明の便宜上図のごとくにす
る。)は、送り出し軸6から巻取り軸7へ矢印8
の方向に移動するよう構成される。巻取り系は真
空槽内部9に配置され、真空槽の構成壁10の一
部より、プラズマ噴射ノズル11が大気より、真
空内へ貫通配置される。前記ノズル11は、励起
コイル12が大気中に巻回配置され、モノマーガ
ス13を単独又はキヤリアガスと同時に導入し、
プラズマ重合されて、重合状態のガス14で噴射
を行うものである。15は押さえフランジで16
はオーリングシールである。
励起コイル12は整合回路を介して高周波電源
に接続されている。尚プラズマ重合膜を作るため
のプラズマ発生方法はこの例だけに限定されるも
のではないのは勿論である。
尚、磁気記録層の形成と前記保護層の形成を連
続的に行うよう構成しても良いのは勿論である。
本発明で用いられる強磁性金属薄膜としては、
Co、Co−Ni、Co−Cr、Co−Ti、Co−W、Co−
Mo、Co−Ni−O等いずれでも良く、いわゆる長
手記録用、垂直記録用のいずれでも良いし、製法
に依存しない。
高周波は1MHzから30MHzまでがよく用いられ、
キヤリアガスとしてはアルゴン等が必要に応じて
用いられ、モノマーガスとしては、CF4、C3F8、
CF3Clパーフロロシクロブタン、ビニルトリメチ
ルシラン、ヘキサメチルジシロキサン、オクタメ
チルシクロテトラシロキサン等が適宜用いられ
る。
以下に更に具体的な実施例で本発明を詳しく説
明するが、これらに本発明が限定されるものでな
いことは勿論である。
実施例 1
厚み10μm、表面粗さ200Åのポリエチレンテ
レフタレート上にCo−Ni(Ni20wt%)を入射角
40゜以上で斜め蒸着した。真空度は1×10-6Torr
まで排気してから酸素を導入して2×10-5Torr
にした。Co−Niは電子ビーム加熱で蒸発させ、
およそ3000Å/secで蒸着し、膜厚は0.1μmに制
御した。
この蒸着膜の移動方向と一致する方向と(比較
例1)、蒸着膜にほぼ直角にプラズマを吹きつけ
るよう(比較例2)にした場合と本発明の場合を
比較した。
プラズマは、CF4ガスを4c.c./min導入し、高
周波は13.56MHzを用い、入射後1200W、反射波
90Wであつた。
蒸着膜の移動速度は6m/minである。
保護膜は120Åに統一した。
得られた磁気テープを3つのテストで比較し
た。テスト1は、市販のビデオテープレコーダ
(例えば松下電器製NV−3000)と同等の走行系
でテープ幅8mmのビデオテープが評価できるデツ
キを準備して、各種の環境でくり返し走行を行
い、テープ鳴きの有無を調べた。判定はA(全く
問題ないもの)、B(画面に影響が少し現れるが実
用になるレベル)、C(実用不可レベル)の3段階
表示で行つた。
テスト2は耐しよく性に対する保護効果で、60
℃80%RHの環境に1週間保存した後、テスト1
のデツキにかけて、ドロツプアウトを環境に入れ
る前と後で、前の値を1として比較した。
光顕で表面状態も併せて観察した。
テスト3はテスト1のデツキを用いスチル状態
で画面を観察し、S/Nが3dB劣化するまでの時
間を比較した。(使用した磁気ヘツドはフエライ
トヘツドでギヤツプ0.3μmのリング型ヘツドであ
る。)
INDUSTRIAL APPLICATION FIELD The present invention relates to a method for manufacturing a magnetic recording medium having a magnetic recording layer made of a ferromagnetic metal thin film suitable for high-density magnetic recording. Conventional Structures and Problems With the increasing demand for high-density recording in recent years, various fields are actively investigating the practical application of magnetic recording media in which the magnetic recording layer is composed of a ferromagnetic metal thin film. Since such a medium aims at high-density recording, the space loss has a dominant effect on reducing the reproduction output at short wavelengths, so the surface of the magnetic recording layer naturally becomes smooth. Therefore, not only high-speed sliding with the magnetic head but also friction with the traveling mechanism members increases, and countermeasures are required. Therefore, as shown in FIG. 1, Co-Ni-O, Co-Ni-P, A general structure is a magnetic recording medium 4 having a magnetic recording layer 2 made of a ferromagnetic metal thin film such as Co--Cr, and a protective layer 3 disposed thereon. As mentioned above, due to space loss constraints, the protective layer must have a thickness of 1000 Å or less, preferably about 100 Å to 200 Å, to achieve its purpose. The use of thin coatings of esters, silicone oils, fluorine oils, etc., and the sputtering method using Teflon as a target are being considered, but these methods do not provide sufficient running performance in various environments with varying temperature and humidity. There is nothing to ensure that. In particular, silicone-based plasma polymerized membranes have satisfactory performance, but are thick at about 1000 Å, and improvements have been desired. Purpose of the Invention An object of the present invention is to provide a manufacturing method that can exhibit the advantages of plasma polymerized films even in the thin film area, and to enable the manufacturing of magnetic recording media having a practical ferromagnetic metal thin film as a magnetic recording layer. . Structure of the Invention The present invention provides a method for forming a plasma polymerized film on a moving ferromagnetic metal thin film, by determining the moving direction of the thin film,
It is characterized in that the directions of plasma spraying are opposite to each other, and a sufficient effect as a protective film can be obtained in a thickness region of 200 Å or less where space loss can be ignored. DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 2 shows the method used to carry out the method of the present invention.
FIG. 2 is a configuration diagram of main parts of a protective layer forming apparatus. The ferromagnetic metal thin film 5 (of course, this is formed on the substrate, but for convenience of explanation it is shown as shown in the figure) is moved from the feeding shaft 6 to the winding shaft 7 by the arrow 8.
is configured to move in the direction of The winding system is arranged inside the vacuum chamber 9, and a plasma injection nozzle 11 is arranged to penetrate from the atmosphere into the vacuum through a part of the constituent wall 10 of the vacuum chamber. The nozzle 11 has an excitation coil 12 wound around it in the atmosphere, and introduces the monomer gas 13 alone or simultaneously with the carrier gas,
The gas 14 is plasma-polymerized and is injected in a polymerized state. 15 is the holding flange and 16
is an O-ring seal. The excitation coil 12 is connected to a high frequency power source via a matching circuit. It goes without saying that the plasma generation method for producing a plasma polymerized film is not limited to this example. It goes without saying that the formation of the magnetic recording layer and the formation of the protective layer may be performed continuously. The ferromagnetic metal thin film used in the present invention includes:
Co, Co-Ni, Co-Cr, Co-Ti, Co-W, Co-
It may be Mo, Co--Ni--O, etc., and may be used for so-called longitudinal recording or perpendicular recording, and does not depend on the manufacturing method. High frequencies from 1MHz to 30MHz are often used.
As the carrier gas, argon or the like is used as necessary, and as the monomer gas, CF 4 , C 3 F 8 ,
CF 3 Cl perfluorocyclobutane, vinyltrimethylsilane, hexamethyldisiloxane, octamethylcyclotetrasiloxane, etc. are used as appropriate. The present invention will be explained in detail below using more specific examples, but it goes without saying that the present invention is not limited to these examples. Example 1 Co-Ni (Ni 20wt%) was deposited at an incident angle on polyethylene terephthalate with a thickness of 10 μm and a surface roughness of 200 Å.
Diagonal deposition was performed at an angle of 40° or more. Vacuum degree is 1×10 -6 Torr
After exhausting the air to a temperature of 2×10 -5 Torr, oxygen was introduced.
I made it. Co−Ni is evaporated by electron beam heating,
The deposition rate was approximately 3000 Å/sec, and the film thickness was controlled to 0.1 μm. The cases of the present invention were compared with the case where the plasma was blown in a direction that corresponded to the moving direction of the vapor deposited film (Comparative Example 1), the case where the plasma was blown almost perpendicularly to the vapor deposited film (Comparative Example 2). For plasma, CF 4 gas was introduced at 4c.c./min, high frequency was 13.56MHz, 1200W after injection, reflected wave
It was 90W. The moving speed of the deposited film was 6 m/min. The thickness of the protective film was unified to 120 Å. The resulting magnetic tapes were compared in three tests. In test 1, we prepared a deck capable of evaluating video tapes with a tape width of 8 mm with a running system equivalent to that of a commercially available video tape recorder (for example, Matsushita Electric's NV-3000), ran it repeatedly in various environments, and detected tape squeals. The presence or absence of was investigated. Judgments were made on a three-level scale: A (no problem at all), B (a slight effect on the screen, but at a practical level), and C (an impractical level). Test 2 is the protective effect against resistance, 60
Test 1 after being stored in an environment of ℃ 80% RH for one week.
The previous value was set as 1 and compared before and after adding the dropout to the environment. The surface condition was also observed using a light microscope. Test 3 used the deck from Test 1 to observe the screen in a still state, and compared the time it took for the S/N to deteriorate by 3 dB. (The magnetic head used was a ring-shaped ferrite head with a gap of 0.3 μm.)
【表】【table】
【表】【table】
【表】
以上のテストの結果からも、本発明の保護膜の
形成方法で得られたプラズマ重合膜を有する磁気
記録媒体は、走行性能が安定しており、且つ、保
護膜として他の役割である強磁性金属薄膜を腐食
から守ること、ビデオテープとして用いた時のス
チル寿命も良好であることが理解される。
この理由は必ずしも明確ではないが、プラズマ
重合膜が強磁性金属薄膜に付着する時、運動方向
が反対であることから、いわゆる配向作用が有効
に作用していることに主として起因しているもの
と考えられる。
このことは他の材料でも同様にいえるからであ
つてフツ素系のプラズマ重合膜に固有の効果では
ないことからも推定されると考えられる。
実施例 2
ポリアミドイミド10.5μm(平均粗さ150Å)上
にCo−Cr(Cr20wt%)膜を高周波スパツタリン
グ法により、0.2μm形成し、その上にヘキサメチ
ルジシロキサンの重合膜をガス導入をヘキサメチ
ルジシクロサン5c.c./min、アルゴン2c.c./min
の混合導入とし、高周波は13.56MHz、入射波
1350W、反射波を105Wの条件で140Å形成した。
このテープをアモルフアスヘツド(ギヤツプ
0.26μm)に交換した実施例1で用いたデツキに
より評価した。
本発明品は、プラズマガス導入方向と強磁性膜
の移動方向が逆で(移動速度7.5m/min)、比較
例1は強磁性膜の移動方向とプラズマガス導入方
向が一致した場合で、プラズマガス導入を直角に
した場合が比較例2である。
実施例1と同様のテストを行つた。[Table] From the above test results, the magnetic recording medium having the plasma polymerized film obtained by the method for forming a protective film of the present invention has stable running performance, and can also play other roles as a protective film. It is understood that certain ferromagnetic metal thin films can be protected from corrosion and that the still life when used as a videotape is also good. The reason for this is not necessarily clear, but it is thought to be mainly due to the fact that when the plasma polymerized film adheres to the ferromagnetic metal thin film, the direction of movement is opposite, so that the so-called orientation effect is effective. Conceivable. This can also be inferred from the fact that the same can be said for other materials and is not an effect unique to fluorine-based plasma polymerized films. Example 2 A Co-Cr (Cr20wt%) film of 0.2 μm thickness was formed on polyamideimide 10.5 μm (average roughness 150 Å) by high-frequency sputtering method, and a polymerized film of hexamethyldisiloxane was added on top of it by gas introduction. Dicyclosan 5 c.c./min, argon 2 c.c./min
The high frequency is 13.56MHz, and the incident wave is
A reflected wave of 140 Å was formed under the conditions of 1350 W and 105 W. Place this tape on an amorphous head (gap).
Evaluation was made using the deck used in Example 1, which was replaced with 0.26 μm). In the product of the present invention, the plasma gas introduction direction and the moving direction of the ferromagnetic film are opposite (moving speed 7.5 m/min), whereas in Comparative Example 1, the moving direction of the ferromagnetic film and the plasma gas introduction direction are the same, and the plasma Comparative Example 2 is a case where the gas is introduced at right angles. The same test as in Example 1 was conducted.
【表】【table】
【表】【table】
【表】
発明の効果
本発明は、プラズマ重合膜を保護膜として強磁
性金属薄膜上に形成する際、プラズマ吹き付け方
向を、強磁性金属薄膜の移動方向と逆にすること
で、くり返し使用での走行系での鳴き発生のな
い、スチル寿命も長い、かつ腐食によるドロツプ
アウト増加もみられない、実用的な高密度記録用
の磁気記録媒体の製造が可能となる。[Table] Effects of the Invention The present invention, when forming a plasma-polymerized film as a protective film on a ferromagnetic metal thin film, reverses the direction of plasma spraying to the moving direction of the ferromagnetic metal thin film, thereby making it easier to use repeatedly. It becomes possible to manufacture a practical magnetic recording medium for high-density recording that does not generate noise in the running system, has a long still life, and does not increase dropouts due to corrosion.
第1図は磁気記録媒体の拡大断面図、第2図は
本発明を実施するための保護膜形成装置の要部構
成図である。
1……基板、2……磁気記録層(強磁性金属薄
膜)、3……保護膜、11……プラズマ噴射ノズ
ル、12……励起コイル。
FIG. 1 is an enlarged sectional view of a magnetic recording medium, and FIG. 2 is a diagram showing the main part of a protective film forming apparatus for carrying out the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Magnetic recording layer (ferromagnetic metal thin film), 3... Protective film, 11... Plasma injection nozzle, 12... Excitation coil.
Claims (1)
を形成する際、前記薄膜の移動方向とプラズマ吹
き付け方向が相対することを特徴とする磁気記録
媒体の製造方法。1. A method for manufacturing a magnetic recording medium, characterized in that when a plasma polymerized film is formed on a moving ferromagnetic metal thin film, the moving direction of the thin film and the plasma spraying direction are opposite to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58238118A JPS60129932A (en) | 1983-12-16 | 1983-12-16 | Production of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58238118A JPS60129932A (en) | 1983-12-16 | 1983-12-16 | Production of magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60129932A JPS60129932A (en) | 1985-07-11 |
| JPH0443324B2 true JPH0443324B2 (en) | 1992-07-16 |
Family
ID=17025444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58238118A Granted JPS60129932A (en) | 1983-12-16 | 1983-12-16 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60129932A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0207350D0 (en) * | 2002-03-28 | 2002-05-08 | Univ Sheffield | Surface |
-
1983
- 1983-12-16 JP JP58238118A patent/JPS60129932A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60129932A (en) | 1985-07-11 |
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