JPH0443633A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To control flow rate without mutual interference between apparatuses when gas is supplied to a plurality of reaction chambers, by equiping a gas supplying system for a plurality of reaction chambers with mass flow controllers connected with the respective reaction chambers, and gas pressure adjusting apparatuses connected with the inlet sides of the mass flow controllers. CONSTITUTION:Mass flow controllers 3-6 are connected with reaction chambers A1, B2 via the respective valves 11-14. regulators 15, 16 for adjusting gas pressure are connected with the inlet sides of the mass flow controllers 3, 4 via valves 7, 8. In the case of general high pressure gas, the regulators 15 and 16 are installed in the inlets of the mass flow controllers 3 and 4, respectively. In the case of liquefied gas, cylinders 17 and 18 of liquefied gas are installed in the inlets of the mass flow controller 5 and 6, respectively. Thereby the interferrence between the respective mass flow controllers can be eliminated.

Description

[Detailed Description of the Invention] [Summary] This invention relates to a gas system supplied to a chemical vapor deposition (CVI) device or an etching device.

The object of the present invention is to provide a gas supply system that can control the flow rate without interference between devices when supplying gas to a plurality of reaction chambers.

(2) An apparatus having a gas supply system for a plurality of reaction chambers, the gas supply system comprising a mass flow controller connected to the reaction chamber for each reaction chamber and a gas pressure adjustment device connected to the inlet side of the mass flow controller. and is configured so that gas is supplied to each of the gas pressure adjustment devices.

2) An apparatus having a gas supply system for a plurality of reaction chambers, the gas supply system including a mass flow controller connected to the reaction chamber for each reaction chamber and a liquefied gas cylinder connected to the "L" side of the mass flow controller. Configure to have.

[Industrial application field]

The present invention relates to semiconductor manufacturing equipment, and in particular to chemical vapor deposition (C
This relates to the gas system supplied to VD) equipment and etching equipment.

Mass flow controllers (MFCs) are often used to control mass flow rates in gas supply systems such as semiconductor manufacturing equipment, but their control characteristics during transients are insufficient (countermeasures are required).

The present invention can be applied to the configuration of a gas system that supplies a large number of devices in response to this demand.

[Conventional technology]

The configuration of a conventional gas supply system is shown in FIG.

FIG. 2 is a configuration diagram of a conventional gas supply system.

In the figure, l is reaction chamber A, 2 is reaction chamber B, 3 to 6
is a mass flow controller, and 7 to 14 are valves.

15 is a regulator (pressure adjustment device).

Gas 1 in the figure is a general high-pressure gas, and gas 2 is a liquefied gas whose pressure cannot be adjusted by a regulator and is supplied directly from a cylinder.

[Problem to be solved by the invention]

It has been found that in the conventional configuration described above, when processing is started in reaction chamber 9 B during treatment in reaction chamber 9, the true flow rate of gas flowing into reaction chamber 9 changes.

FIG. 3 is a diagram explaining the problems of the conventional example.

The figure shows mass flow controller 3 connected to 1 reaction chamber A.
5 and 5 and the relationship between the flow rate of the mass flow controller 4 or 6 connected to the reaction chamber B and the elapsed time.

In the figure, A is the time when the process in reaction chamber A starts, and B is the time when the process in reaction chamber B starts.

At time B, fluctuations in the gas flow rate supplied to reaction chamber A are observed.

As a result of investigating the cause of the flow rate fluctuation, it was found that processing in reaction chamber A (M
FC3 and 5 are controlling the gas mass flow rate).

It was found that when processing started in reaction chamber B (gas started flowing into MFCs 4 and 6), the pressure on the inlet side of the instantaneous mass flow controller fluctuated, causing turbulence in the gas flow, resulting in flow rate fluctuations. .

It has been confirmed that the magnitude of this flow rate fluctuation can be reduced with recent high-speed response mass flow controllers, but this cannot be said to be sufficient.

The present invention is applicable to supplying gas to a plurality of reaction chambers.

It is an object of the present invention to provide a gas supply system that can control the flow rate without interference between devices.

[Means to solve the problem]

What is the solution to the above problem?

1) An apparatus having a gas supply system for a plurality of reaction chambers, the gas supply system comprising a mass flow controller connected to the reaction chamber for each reaction chamber, and a gas pressure adjustment device connected to the inlet side of the mass flow controller. 1. A semiconductor manufacturing apparatus comprising: a semiconductor manufacturing apparatus configured to have a gas pressure adjusting device;

or 2) an apparatus having a gas supply system for a plurality of reaction chambers, the gas supply system comprising a mass flow controller connected to the reaction chamber for each reaction chamber, and a liquefied gas pipe connected to the input side of the mass flow controller. This is achieved by a semiconductor manufacturing apparatus having the following.

[Effect]

In the present invention, it was discovered that because the pressure of the gas supplied to the mass flow controllers connected to each reaction chamber was controlled by a common regulator, interference occurred between the mass flow controllers. It was designed to be provided.

Additionally, since a regulator cannot be used for liquefied gas, a liquefied gas cylinder is connected to each mass flow controller independently to eliminate interference between the mass flow controllers.

〔Example〕

FIG. 1 is a block diagram of a gas supply system according to an embodiment of the present invention.

In the figure, l is reaction chamber A, 2 is reaction chamber B, 3 to 6
is a mass flow controller, and 7 to 14 are valves.

15 and 16 are regulators (pressure adjustment devices), 17
．． 18 is a cylinder.

For general high-pressure gas, one regulator is attached to each mass flow controller at its inlet, and for liquefied gas, one liquefied gas cylinder is attached to each mass flow controller at its inlet.

By doing so, interference between the nine individual mass flow controllers is eliminated.

An example of a high pressure gas is carbon tetrafluoride (CCI4), which is used for dry etching.

In this case, a regulator is provided independently on the inlet side of the mass flow controller connected to each reaction chamber.

Another example of a liquefied gas is boron trichloride (BCl2), which is used in plasma etching of metals.

In this case, a BCl2 gas cylinder is provided independently on the first side of the mass flow controller connected to each reaction chamber.

In this way, if processing was started in one reaction chamber while the other reaction chamber was in progress, the plasma emission intensity could change, but by holding the cylinders independently, this phenomenon could not be observed. lost.

〔Effect of the invention〕

As explained above, according to the present invention, it was possible to obtain a gas supply system that can control the flow rate without interference between devices when gas is supplied to a plurality of reaction chambers.

As a result, processing in CVD equipment, plasma CVD equipment, dry etching equipment, etc. used in the manufacture of semiconductor devices is stabilized, and manufacturing yields are improved.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a gas supply system according to an embodiment of the present invention. FIG. 2 is a configuration diagram of a conventional gas supply system. FIG. 3 is a diagram explaining the problems of the conventional example. In fig. I is reaction chamber A. 2 is reaction chamber B. 3 to 6 are mass flow controllers. 7-I4 are valves 15 and 16 are regulators (pressure adjustment devices). 17 and 18 are cylinders Tip example/') Configuration diagram 70th

Claims (1)

[Claims] 1) An apparatus having a gas supply system for a plurality of reaction chambers, the gas supply system comprising a mass flow controller connected to the reaction chamber for each reaction chamber, and a mass flow controller connected to the inlet side of the mass flow controller. What is claimed is: 1. A semiconductor manufacturing apparatus, comprising: a gas pressure adjusting device; the semiconductor manufacturing device is configured such that gas is supplied to each gas pressure adjusting device; 2) An apparatus having a gas supply system for a plurality of reaction chambers, wherein the gas supply system has a mass flow controller connected to the reaction chamber for each reaction chamber and a liquefied gas cylinder connected to the inlet side of the mass flow controller. A semiconductor manufacturing device characterized by: