JPH0443654A - Preparation of copper film laminated alumina wafer - Google Patents
Preparation of copper film laminated alumina waferInfo
- Publication number
- JPH0443654A JPH0443654A JP15225190A JP15225190A JPH0443654A JP H0443654 A JPH0443654 A JP H0443654A JP 15225190 A JP15225190 A JP 15225190A JP 15225190 A JP15225190 A JP 15225190A JP H0443654 A JPH0443654 A JP H0443654A
- Authority
- JP
- Japan
- Prior art keywords
- copper film
- substrate
- copper
- surface temperature
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 91
- 239000010949 copper Substances 0.000 title claims abstract description 91
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 21
- 239000012298 atmosphere Substances 0.000 claims abstract description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 61
- 239000012808 vapor phase Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 11
- 230000035939 shock Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
（産業１：、ぴ）利用分野】
本発明は、印刷配隷板や集Ｍ回路のパッケージ等におい
て、導体パターンを形成するための銅膜をアルミナを主
成分とする基板」、に積層した銅膜積層アルミナ基板の
製造方法に関するしのである。(Industry 1:, P) Field of Application] The present invention relates to a copper film laminated to a substrate mainly composed of alumina for forming conductor patterns in printed wiring boards, integrated M circuit packages, etc. This paper relates to a method for manufacturing a film-stacked alumina substrate.
従来より、セラミックス等の無機質よりなる基板の表面
に銅膜を積層する方法どして、真空蒸着、スパッタリン
グ、イオンブレーティング等の気相メッキによる方法、
銅ペーストを印刷する方法、無電解メッキ等の湿式メッ
キによる方法等が知られている。
銅膜を積層した基板を高周波分野で使用す−るには、伝
送損失を少なくすることが・ｚ・要であって、基板には
表面粗度が（、） 、 １ ｕｚ稈度より小さい平滑な
ものを用いなければならない。また、［１ｉｌ路の高密
度化に（十って導電パターンを微細に加工することが要
求されている。
これｔ、の要求を満ｔ：ずために、気相メツｑに、」−
り銅膜を形成する方法が採用されつつ１ぞ）る（特開昭
５９ １６２１８’１号公報等）。Conventionally, methods for laminating a copper film on the surface of an inorganic substrate such as ceramics include vapor phase plating methods such as vacuum evaporation, sputtering, and ion blating;
A method of printing copper paste, a method of wet plating such as electroless plating, etc. are known. In order to use a substrate laminated with a copper film in the high frequency field, it is necessary to reduce transmission loss. have to use something. In addition, [to increase the density of the 1il path, it is required to finely process the conductive pattern.
A method of forming a copper film is being adopted (Japanese Patent Application Laid-open No. 16218'1, 1983, etc.).
【発明が解決しようとする課Ｈ１
ところで、基板の表面に積層した銅膜と基板との付着強
度の一部は、基板の表面の凹凸に銅膜の一部が入り込む
ことによる投錯効果により生じている。したがって、表
面粗度が小さい平滑な基板を用いると、投錨効果が十分
に機能せず、付着強度が小さくなるという問題が生じる
。
本発明は上記問題点の解決を目的とするものであり、表
面が平滑な基板を用いる場合でも銅膜の付着強度が大き
くとれ、熱衝撃に対する耐性に優れた銅膜積層アルミナ
基板の製造方法を提供しようとするものである。
【課題を解決するための手段】
本発明では、上記目的を達成するために、高真空中に放
電ガスとなる希ガスに加えて酸素ガスを混入した混合ガ
スを導入した雰囲気中において、アルミナを主成分とす
る基板の表面温度を６００〜１０５０℃にした状態で、
気相メッキにより０．０１〜２Ｂ厚の銅膜を形成し、次
に、酸素ガスを除去した希ガスの雰囲気中において基板
の表面温度を１４０〜４００℃にした状態で、気相メッ
キにより上記＠膜の上にさらに銅膜を形成し、全厚みが
３１１１以」二の所望厚の銅膜を形成するようにしてい
るのである。Problem to be solved by the invention H1 By the way, part of the adhesion strength between the copper film laminated on the surface of the substrate and the substrate is caused by the throw effect caused by part of the copper film getting into the unevenness of the surface of the substrate. ing. Therefore, if a smooth substrate with a small surface roughness is used, the anchoring effect will not function sufficiently, resulting in a problem that the adhesion strength will be reduced. The present invention aims to solve the above-mentioned problems, and provides a method for manufacturing a copper film laminated alumina substrate that has high adhesion strength of the copper film even when using a substrate with a smooth surface and has excellent resistance to thermal shock. This is what we are trying to provide. [Means for Solving the Problems] In the present invention, in order to achieve the above object, alumina is produced in an atmosphere in which a mixed gas containing oxygen gas in addition to a rare gas serving as a discharge gas is introduced into a high vacuum. With the surface temperature of the main component substrate at 600 to 1050°C,
A copper film with a thickness of 0.01 to 2B is formed by vapor phase plating, and then the above-described copper film is formed by vapor phase plating while the surface temperature of the substrate is 140 to 400°C in an atmosphere of rare gas from which oxygen gas has been removed. A copper film is further formed on the @ film to form a copper film having a desired total thickness of 3111 mm or more.
上記方法によれば、第１段階として、放電ガスに酸素ガ
スを含んだ雰囲気中で、基板の表面温度を６００〜１０
５０℃にした状態で、気相メッキにより０．０１〜２０
厚の銅膜を形成する。このとき、基板の表面温度が比較
的高温であることにより、ＩＲＷｉ！は溶融状態に近く
なり、基板の表面に形成されている微細な凹凸の中に回
り込むことができるようになって銅膜の基板に対する付
着強度が高まる。また、酸素ガスを含んだ雰囲気で銅膜
を形成するから、いわゆる（＋ｘｙｇｅｎ ａｉｄｅｄ
ｂｏｎｄｉＢによって付着強度が増加するのである。
すなわち、アルミナを主成分とする基板と銅膜との間に
微量の酸素が介在し、化学的に銅とアルミナとを結合さ
せるのであって、銅膜と基板との界面が強固に結合する
のである。
ここにおいて、基板の表面温度が６００”Ｃ未満である
と銅膜が溶融状態にならず、また、銅とアルミナとの化
学的な結合もほとんど生じない。
一方、基板の表面温度が１０５０℃を越えると、１４１
１９ｉが完全に溶融し、銅粒子間の凝集力によって銅粒
子が局在化することになる。その結果、表面の平滑性が
損なわれ、次段階で銅膜を積層しても実用になる程度の
平滑性を回復することが困難になる。
第１段階における銅膜の厚みは、０．０１ｕｚ未満であ
ると、ｉ視的に見て銅ｇ！Ｊグ）形成されない部分が多
くなり、付着強度を高める効果が十分に得られなくなる
。一方、銅膜の厚みが２１１ｆｆを越えると銅膜の表面
に凹凸が形成されやすくなり、次段階で銅膜を積層して
も実用になる程度の平滑性を確保することが困難になる
。
第１段階では、基板の表面温度が高く、かつ銅膜が薄い
ものであったから、銅膜の表面には凹凸が件しるもので
あった。第２段階では、酸素を除去した希ガスの雰囲気
中で、基板の表面温度を１４０〜４００℃にし、銅膜の
全厚みが３１Ｉｆｆ以上の所望厚になるまで気相メッキ
により第１段階で形成された銅膜の上に銅膜を形成する
。すなわち、第２段階では、第１段階で形成されｔ：銅
膜の士に銅膜を積層して全厚みが３１以−Ｆである銅膜
を形成するから、第１段階で形成しな銅膜の表面に生じ
ていた凹凸が埋められて、銅膜の表面がザ滑化されるの
である。
第２段階における酸素ガスの分圧は５×１０Ｐ ａより
高いと、＃ｒＩａの表面が酸化することになり、銅膜に
よって回路パターンを形成する際に、電気的特性や表面
実装の作業にＭ影響を及ばずことになる。
辺上のようにして、第１段階では、ｋ板に対する付着強
度の大きな薄い銅膜を形成し、次に、第２段階では、第
１段階で形成したに４膜のＦにさらに銅膜を積層して表
面が平滑な＠膜を形成するのであって、２過程で銅膜を
形成するから、基板に対する付着強度が大きく、しかも
、表面がザ滑な＠膜を形成することができるのである。
また、このようにして形成された銅膜は、熱衝撃に対し
て十分な耐性を有し付着強度が低下しにくいものとなる
。According to the above method, in the first step, the surface temperature of the substrate is set to 600 to 100 ℃ in an atmosphere containing oxygen gas in the discharge gas.
0.01 to 20 by vapor phase plating at 50℃
Forms a thick copper film. At this time, since the surface temperature of the substrate is relatively high, IRWi! The copper becomes close to a molten state and can penetrate into the fine irregularities formed on the surface of the substrate, increasing the adhesion strength of the copper film to the substrate. In addition, since the copper film is formed in an atmosphere containing oxygen gas, so-called (+xygen aided)
bondiB increases adhesion strength. In other words, a small amount of oxygen is present between the substrate whose main component is alumina and the copper film, and the copper and alumina are chemically bonded, resulting in a strong bond at the interface between the copper film and the substrate. be. Here, if the surface temperature of the substrate is less than 600"C, the copper film will not be in a molten state, and chemical bonding between copper and alumina will hardly occur. On the other hand, if the surface temperature of the substrate is less than 1050"C If you exceed it, 141
19i is completely melted, and the copper particles become localized due to the cohesive force between the copper particles. As a result, the smoothness of the surface is impaired, and even if a copper film is laminated in the next step, it becomes difficult to restore the smoothness to a level suitable for practical use. If the thickness of the copper film in the first stage is less than 0.01 uz, the copper g! J) There are many parts that are not formed, and the effect of increasing adhesive strength cannot be obtained sufficiently. On the other hand, if the thickness of the copper film exceeds 211 ff, unevenness is likely to be formed on the surface of the copper film, and even if the copper film is laminated in the next step, it becomes difficult to ensure smoothness to a practical level. In the first stage, the surface temperature of the substrate was high and the copper film was thin, so the surface of the copper film was uneven. In the second stage, the surface temperature of the substrate is set to 140 to 400°C in an oxygen-free rare gas atmosphere, and the copper film is formed in the first stage by vapor phase plating until the total thickness of the copper film reaches the desired thickness of 31Iff or more. A copper film is formed on the copper film. That is, in the second step, a copper film is laminated between the copper films formed in the first step to form a copper film having a total thickness of 31 F or more. The unevenness on the surface of the film is filled in and the surface of the copper film is smoothed. If the partial pressure of oxygen gas in the second stage is higher than 5 × 10 Pa, the surface of #rIa will be oxidized, and when forming a circuit pattern with a copper film, the electrical characteristics and surface mounting work will be affected. There will be no impact. As shown above, in the first step, a thin copper film with high adhesion strength to the K plate is formed, and then in the second step, an additional copper film is applied to the four F films formed in the first step. Since the copper film is formed in two steps by laminating layers to form a film with a smooth surface, it is possible to form a film with a high adhesion strength to the substrate and a smooth surface. . Further, the copper film formed in this manner has sufficient resistance to thermal shock and is resistant to decrease in adhesion strength.
基板にはアルミナを焼成したセラミックスを用いる。こ
の基板は、スパッタリング装置内に無酸素銅よりなるタ
ーゲットと対向するように配置される。スパッタリング
装置内に基板を配置するときには、基板とターゲット・
どの間には、接地されたシャッタを介在させておく。
スパッタリング装置内の雰囲気は、残留ガスの総圧力が
５Ｘ１０−’Ｐａ以下となるようにした高真空中に、放
電ガスとして希ガスを１０Ｐａ導入するとともに、酸素
を０．１〜１０Ｐａ混入して形成する。放電ガスとして
は、アルゴン、ネオン、クリプトン等を用いることがで
きる。
次に、基板をターゲットとして高周波電力をシャッタと
基板との間に印加し、高周波放電によって放電ガスをイ
オン化させ、基板の表面にイオンを照射する。この処理
は、イオンボンバードと称する処理であって、イオンを
衝突させることによって基板の表面に付着した異物をた
たき出して清浄化し、また、基板の表面に微細な凹凸を
形成するとともに基板の表面における判断しやすい部分
を除去して銅膜の付着強度を高めるのである。
ここにおいて、本実施例では、スパッタリング装置とし
ては、マグネトロン方式（日型アネルバ製 ５ＰＦ７１
３Ｈ）のものを用い、基板としては、４インチ角、０．
６３５ｉｖ厚のアルミナ基板（京セラ製 Ａ４９２）を
用いる。また、基板は必要に応じて適宜表面粗度が得ら
れるＪ：うに研磨する。
さらに、ターゲットとしては、直径２００ｚａで純度が
９９．９９％の無酸素銅を用いる。放電ガスとしてはア
ルゴンを用いており、イオンボンバードの際には、］、
３．５６ＭＨｚの高周波を２００Ｗの電力で印加する。
この周波数は法定周波数であって、限定する主旨ではな
い。
基板にイオンボンバードを施した後、シャッタを開いて
基板とターゲットとを対向させ、以下の条件でスパッタ
リングを行い、基板の表面に２段附で銅膜を積層する。
すなわち、第１段階では、基板の表面温度を比較的高温
にし、基板の表面にスパッタリングによって薄い銅膜を
形成する。その後、第２段階では、基板の表面温度を下
げるとともに、酸素ガスの分圧を５Ｘ１０−５Ｐａ以下
とした１ ０Ｐａのアルゴンの雰囲気を形成し、第１段
階で形成したｆｌ膜の上にスパッタリングによってさら
にｆＡ膜を積層する。
十人に各種実施例および各種比較例の条件を示す。
上表において、平均粗度は基板の表面中心線平均粗度で
ある。各実施例および各比較例に対して、それぞれ［ジ
下のようにして、銅膜の基板に対する（１′着強度と、
熱衝撃Ｉ＼の耐性とについて試験を行った。また、銅膜
について表面中心線平均￥１１度を測定した。
し試験法１］
エツチングによって、＠膜に２ｚｉＸ２ｚｚの正方形の
パターンを形成し、このパターンに直径０７ｚｚの略し
形に折曲したスズメッキ銅線を半田付１プし、基板を固
定するとともにオートグラフによって基板の表面に直交
する方向に銅線を引張ることにより、銅膜の基板に対す
る判断強度を測定した。この試験では熱衝撃を加える前
の銅膜の基板に対する付着強度がわかる。
［試験法２コ
エツチングによって、銅膜に２ｍｚｘ２ｚｍの正方形の
パターンを形成し、このパターンに酸化防止のために半
田を盛り、熱衝撃試験機によって、空気雰囲気中で一６
５℃−常温５分→１５０℃３０分→常温５分→−６５℃
３０分という熱衝撃サイクルを３００サイクル繰り返し
た後、」１記パターンに直径０．７ｉ＋ｍの略り形に折
曲したスズメッキ銅線を半田付けし、基板を固定すると
ともにオートグラフによって基板の表面に直交する方向
に銅線を引張ることにより、熱衝撃後の銅膜の基板に対
する剥離強度を測定した。
以上の２種の試験法による試験結果および銅膜の表面粗
度は下表の通りである。
【発明の効果］
本発明は上述のように、第１段階として、放電ガスに酸
素ガスを含んだ雰囲気中で、基板の表面温度を６００〜
１０５０℃にした状態で、気相メッキにより０．０１〜
２μｌ厚の銅膜を形成するので、基板の表面温度が比較
的高温であることにより、第１段階で形成される銅膜は
溶融状態に近くなり、基板の表面に形成されている微細
な凹凸の中に回り込むことができるようになって銅膜の
散板に対する付着強度が高まる。また、酸素ガスを含ん
だ雰囲気で銅膜を形成するから、付着強度が増加するの
である。すなわち、アルミナを主成分とする基板と＠膜
との間に微量の酸素が介在し、化Ｔ的に銅とアルミナと
を結合させるのであって、銅膜と基板との界面が強固に
結合するという効果を奏する。
第２段階では、酸素を除去した希ガスの雰囲気中で、基
板のａｒｆｉｉ温度を１４０〜４００℃にし２銅膜の辛
厚みが３１１Ｎ以上の所望厚になるまで気相メ、−Ｖ−
により第１段階で形成された銅膜の−りに銅膜を形成す
るので、第１段階で形成された銅膜のトに銅膜を積層し
て全厚みが３１１ｘ以上であるｆＲ膜を形成するから、
第１段階で形成した銅膜の表面に生じていた凹凸が埋め
られて銅膜の表面が平滑化されるという利点がある。
要するに、第１段階では、基板表面が平滑であっても基
板との付着強度が高く熱衝撃に耐性を有した銅膜を形成
することができ、第２段階においては、第１段階で形成
された銅膜の一トにさらに銅膜を積層することによって
、銅＋１０の表面を平滑化することができるのでりる。
その結果、基板との付＠強度が高く、表面が平滑な銅膜
を形成することができるのである。
代理人 弁理士 石 １）長 しCeramics made of fired alumina are used for the substrate. This substrate is placed in a sputtering apparatus so as to face a target made of oxygen-free copper. When placing the substrate in the sputtering equipment, the substrate and target
A grounded shutter is interposed between the two. The atmosphere in the sputtering equipment is created by introducing a rare gas of 10 Pa as a discharge gas and mixing oxygen of 0.1 to 10 Pa into a high vacuum in which the total pressure of residual gas is 5 x 10-'Pa or less. do. Argon, neon, krypton, etc. can be used as the discharge gas. Next, high frequency power is applied between the shutter and the substrate using the substrate as a target, the discharge gas is ionized by high frequency discharge, and the surface of the substrate is irradiated with ions. This process is called ion bombardment, and it cleans the surface of the substrate by knocking out foreign matter by bombarding it with ions.It also forms fine irregularities on the surface of the substrate and makes judgments on the surface of the substrate. This increases the adhesion strength of the copper film by removing areas that are susceptible to corrosion. Here, in this embodiment, the sputtering device is a magnetron type (5PF71 manufactured by Nikkei Anelva).
3H) was used, and the substrate was 4 inches square, 0.3H).
An alumina substrate (Kyocera A492) with a thickness of 635 iv is used. Further, the substrate is polished according to necessity to obtain an appropriate surface roughness. Furthermore, oxygen-free copper with a diameter of 200 za and a purity of 99.99% is used as the target. Argon is used as the discharge gas, and during ion bombardment, ],
A high frequency of 3.56 MHz is applied with a power of 200 W. This frequency is a legal frequency and is not intended to be limiting. After ion bombarding the substrate, the shutter is opened to make the substrate and target face each other, and sputtering is performed under the following conditions to deposit a copper film in two stages on the surface of the substrate. That is, in the first step, the surface temperature of the substrate is made relatively high, and a thin copper film is formed on the surface of the substrate by sputtering. After that, in the second step, while lowering the surface temperature of the substrate, an atmosphere of 10 Pa of argon with a partial pressure of oxygen gas of 5×10-5 Pa or less was created, and sputtering was performed on the fl film formed in the first step. Furthermore, an fA film is laminated. Conditions for various examples and comparative examples are shown for ten people. In the above table, the average roughness is the surface center line average roughness of the substrate. For each example and each comparative example, the adhesion strength (1') of the copper film to the substrate was determined as shown below.
A test was conducted for resistance to thermal shock I\. In addition, the average surface center line of the copper film was measured at 11 degrees. Test method 1] Form a square pattern of 2zi x 2zz on the @ film by etching, solder a tin-plated copper wire bent into an abbreviated shape with a diameter of 07zz to this pattern, fix the board, and The strength of the copper film against the substrate was measured by pulling the copper wire in a direction perpendicular to the surface of the substrate. This test shows the adhesion strength of the copper film to the substrate before thermal shock is applied. [Test method 2: A square pattern of 2mzx2zm is formed on the copper film by coetching, solder is applied to this pattern to prevent oxidation, and the pattern is tested in an air atmosphere using a thermal shock tester.
5℃ - room temperature 5 minutes → 150℃ 30 minutes → room temperature 5 minutes → -65℃
After repeating 300 thermal shock cycles of 30 minutes, a tin-plated copper wire bent into an abbreviated shape with a diameter of 0.7i+m was soldered to the pattern 1, and the board was fixed, and an autograph was applied to the surface of the board. The peel strength of the copper film against the substrate after thermal shock was measured by pulling the copper wire in the orthogonal direction. The test results and surface roughness of the copper film obtained by the above two test methods are shown in the table below. Effects of the Invention As described above, in the first step of the present invention, the surface temperature of the substrate is increased from 600 to 600 in an atmosphere containing oxygen gas in the discharge gas.
0.01~ by vapor phase plating at 1050℃
Since a copper film with a thickness of 2 μl is formed, the surface temperature of the substrate is relatively high, so the copper film formed in the first step is close to a molten state, and the fine irregularities formed on the surface of the substrate are The adhesion strength of the copper film to the scattering plate increases. Furthermore, since the copper film is formed in an atmosphere containing oxygen gas, the adhesion strength increases. In other words, a small amount of oxygen is present between the substrate whose main component is alumina and the @ film, and the copper and alumina are bonded together in a chemical manner, resulting in a strong bond at the interface between the copper film and the substrate. This effect is achieved. In the second step, in an oxygen-free rare gas atmosphere, the temperature of the substrate is set to 140 to 400°C, and the vapor phase method is applied until the copper film reaches the desired thickness of 311N or more.
Since a copper film is formed on top of the copper film formed in the first step, a copper film is laminated on top of the copper film formed in the first step to form an fR film with a total thickness of 311x or more. Because I will,
There is an advantage that the unevenness occurring on the surface of the copper film formed in the first step is filled and the surface of the copper film is smoothed. In short, in the first step, it is possible to form a copper film that has high adhesion strength to the substrate and is resistant to thermal shock even if the substrate surface is smooth, and in the second step, it is possible to form a copper film that is resistant to thermal shock even if the substrate surface is smooth. By further laminating a copper film on one of the copper films, the surface of the copper +10 layer can be smoothed. As a result, a copper film with high adhesion strength to the substrate and a smooth surface can be formed. Agent Patent Attorney Ishi 1) Nagashi
Claims (1)
スを混入した混合ガスを導入した雰囲気中において、ア
ルミナを主成分とする基板の表面温度を６００〜１０５
０℃にした状態で、気相メッキにより０．０１〜２１μ
ｍの銅膜を形成し、次に、酸素ガスを除去した希ガスの
雰囲気中において基板の表面温度を１４０〜４００℃に
した状態で、気相メッキにより上記銅膜の上にさらに銅
膜を形成し、全厚みが３μｍ以上の所望厚の銅膜を形成
することを特徴とする銅膜積層アルミナ基板の製造方法
。(1) In an atmosphere in which a mixed gas containing oxygen gas in addition to a rare gas serving as a discharge gas is introduced into a high vacuum, the surface temperature of a substrate mainly composed of alumina is set to 600 to 105°C.
0.01~21μ by vapor phase plating at 0℃
m copper film is formed, and then a further copper film is formed on the copper film by vapor phase plating while the surface temperature of the substrate is 140 to 400°C in a rare gas atmosphere from which oxygen gas has been removed. A method for producing a copper film laminated alumina substrate, comprising forming a copper film having a desired total thickness of 3 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225190A JPH0443654A (en) | 1990-06-11 | 1990-06-11 | Preparation of copper film laminated alumina wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225190A JPH0443654A (en) | 1990-06-11 | 1990-06-11 | Preparation of copper film laminated alumina wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0443654A true JPH0443654A (en) | 1992-02-13 |
Family
ID=15536400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15225190A Pending JPH0443654A (en) | 1990-06-11 | 1990-06-11 | Preparation of copper film laminated alumina wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0443654A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100297354B1 (en) * | 1999-01-11 | 2001-09-22 | 윤문수 | Method for fabricating a multi-layered Cu films by sputtering method |
| JP2009035824A (en) * | 2008-10-31 | 2009-02-19 | Ulvac Japan Ltd | Copper film production method, and sputtering device used for the method |
-
1990
- 1990-06-11 JP JP15225190A patent/JPH0443654A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100297354B1 (en) * | 1999-01-11 | 2001-09-22 | 윤문수 | Method for fabricating a multi-layered Cu films by sputtering method |
| JP2009035824A (en) * | 2008-10-31 | 2009-02-19 | Ulvac Japan Ltd | Copper film production method, and sputtering device used for the method |
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