JPH0444360U - - Google Patents
Info
- Publication number
- JPH0444360U JPH0444360U JP8643790U JP8643790U JPH0444360U JP H0444360 U JPH0444360 U JP H0444360U JP 8643790 U JP8643790 U JP 8643790U JP 8643790 U JP8643790 U JP 8643790U JP H0444360 U JPH0444360 U JP H0444360U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- lid
- cell
- film formation
- mouth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の一実施例を示す成膜用Ｋセル
の縦断面図である。
１……るつぼ、２……るつぼ１の蓋、３……ヒ
ータ線、４……サポータ、５……ヒータ用絶縁が
いし、６……金属の蓋、７……るつぼ１および蓋
６のおさえ、８……熱電対、９……熱電対絶縁が
いし。
FIG. 1 is a longitudinal sectional view of a K cell for film formation showing an embodiment of the present invention. 1... Crucible, 2... Lid of crucible 1, 3... Heater wire, 4... Supporter, 5... Insulating insulator for heater, 6... Metal lid, 7... Holder of crucible 1 and lid 6, 8...Thermocouple, 9...Thermocouple insulator.
Claims (1)
た蓋の上に設けられた金属製の蓋と、前記るつぼ
および前記両蓋を取巻くように前記るつぼの口付
近に密に巻かれたヒータ線を含み、前記るつぼを
加熱するとともに、前記金属製の蓋を加熱するこ
とにより前記るつぼの蓋の温度を上げるヒータと
を有することを特徴とする成膜用Ｋセル。 In the K cell for film formation, a metal lid provided on a lid provided at the mouth of the crucible, and a heater wire tightly wound near the mouth of the crucible so as to surround the crucible and both lids. A K-cell for film formation, comprising: a heater that heats the crucible and raises the temperature of the crucible lid by heating the metal lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8643790U JPH0444360U (en) | 1990-08-20 | 1990-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8643790U JPH0444360U (en) | 1990-08-20 | 1990-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0444360U true JPH0444360U (en) | 1992-04-15 |
Family
ID=31818103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8643790U Pending JPH0444360U (en) | 1990-08-20 | 1990-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0444360U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008261056A (en) * | 2003-08-04 | 2008-10-30 | Lg Display Co Ltd | Deposition source for organic electroluminescent layers |
| JP2013012543A (en) * | 2011-06-28 | 2013-01-17 | Fujitsu Ltd | Molecular beam crystal growth apparatus and semiconductor device manufacturing method |
-
1990
- 1990-08-20 JP JP8643790U patent/JPH0444360U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008261056A (en) * | 2003-08-04 | 2008-10-30 | Lg Display Co Ltd | Deposition source for organic electroluminescent layers |
| JP2013012543A (en) * | 2011-06-28 | 2013-01-17 | Fujitsu Ltd | Molecular beam crystal growth apparatus and semiconductor device manufacturing method |
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