JPH0445246Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a hermetically sealed power semiconductor device such as a power transistor, and particularly to an electrode lead-out structure thereof.

[Conventional technology]

A conventional hermetic semiconductor device will be explained with reference to FIG. 3. A power semiconductor element 1 is housed in a container 2. As shown in FIG. The container 2 has a metal base portion 2 made of a metal material with good thermal conductivity such as copper.
A, a metal cap part 2B welded to this metal base part 2A, and an insulating material 2C for a pipe seal forming a part of the cap. The semiconductor element 1 includes a metal piece 3 made of a metal material having a coefficient of thermal expansion relatively close to that of a semiconductor, such as a molybdenum plate, and a solder layer 4.
It is bonded to the metal base 2A via. An internal lead 6 inserted into the pipe 5 supported by the insulating material 2C is bonded to the other surface of the semiconductor element 1 with solder 7.

[Problem that the invention attempts to solve]

A conventional semiconductor device of this type has an internal lead 6
Since the tip of the internal lead 6 has a structure in which it is directly connected to the semiconductor element 1, the tip of the internal lead 6 is structured to absorb external stress to some extent.
When a force is applied to B or the pipe 5 in the direction of the metal base portion 2A, there is a problem in that pressure is applied to the semiconductor element 1 through the inner lead 6 and has an adverse effect. Particularly in the sealing process, considerable stress was applied to the internal leads 5 and the semiconductor element 1 during resistance welding between the metal base 2A and the cap part 2B, and the semiconductor element 1 was sometimes damaged.

[Means for solving problems]

Therefore, in this invention, two or more metal electrode pieces are supported by a support installed in a metal base and each extends from the supporting point so that there is no substantial mechanical influence on each other. An inner lead is connected to or near the tip of one of the electrode pieces, and an inner lead connected to a semiconductor element is connected to the other metal electrode piece.

[Effect]

With this structure, the stress applied to the inner lead is absorbed by the metal electrode piece, and the stress applied to the inner lead is not substantially transmitted to the inner lead and the semiconductor element, so the connection state of the inner lead is deteriorated due to external force. It is possible to prevent damage or breakage of semiconductor elements.

〔Example〕

An embodiment of the present invention will be described with reference to FIGS. 1 and 2. Reference numeral 8 denotes a column implanted in the metal base portion 2A, and an insulating material 2 such as a glass material is used.
_A1 is fixed to the metal base portion 2A.
A metal electrode 10 is attached to the tip of the pillar 8 by a nut 9.
is installed. As an example of this metal electrode piece 10, as shown in FIG.
and connection arms 10B, 10C, which extend respectively.
10D and 10E, and a hole 10F having a diameter slightly larger than the diameter of the support column 8 is provided in the common portion 10A. Connection arm 10B, 10C, 10D
have internal leads 11A and 11B, 11C and 11D, 11E and 11 connected to the respective semiconductor elements 1.
F is soldered. Further, the distal end portion 10e of the connecting arm 10E receives the distal end of the inner lead 6 extending from the direction opposite to that of the internal leads 11A to 11F, and is brazed thereto. At this time, the inner lead 6 is brazed while being pressurized from above, but due to the elasticity of the connecting arm 10E, the tip end 1
0e is pressed down in the plane of the paper with the hole 10F serving as the fulcrum, and the pressing force on the inner lead 6 is substantially applied to the connection leads 10B and 10.
It is not transmitted to C and 10D. Therefore, even if a force is applied to the inner lead 6 in the direction of the arrow, substantially no stress is applied to the semiconductor element 1.

Next, FIG. 2B shows another example of a metal electrode piece,
Connection arm piece 10 to which the inner lead 6 is connected
E' is separate from the metal electrode piece 10', and has a hole at the end opposite to the tip part 10'e for connecting the inner lead 6. This hole has a diameter slightly larger than the diameter of the support column 8. Connecting arm piece 1 like this
Since only 0''E is separate, when these are attached to the support 8, connect them around the fulcrum so that the tip of the inner lead 6 and the tip 10'e of the connecting arm piece 10'E are aligned. The arm piece 10'E can be deflected.In FIG. 1, the same symbols as those shown in FIG. 3 indicate the same members.

[Effect of idea]

As described above, according to the present invention, substantially all of the force applied from the outside to the inside of the semiconductor device via the inner lead is absorbed by the metal electrode piece, and no stress is applied to the semiconductor element. Therefore, it is possible to solve problems such as lower yields, failures, and lower characteristics of semiconductor devices caused by external forces.

Further, since the metal electrode piece is interposed between the inner leads, the connection between the inner leads can be made reliably and easily, especially as the number of inner leads increases.

Furthermore, the connection state between the internal lead and the semiconductor element or metal electrode piece portion is not adversely affected by external force.

[Brief explanation of the drawing]

FIG. 1 shows an embodiment of a hermetic type semiconductor device according to the present invention, FIGS. 2A and 2B show different examples of metal electrode pieces used in the present invention, and FIG. 3 shows a conventional example. DESCRIPTION OF SYMBOLS 1...Semiconductor element, 2...Container, 2A...Metal base part, 2B...Cap part, 5...Pipe,
6... Inner lead, 8... Support column, 10... Metal electrode piece, 11A to 11F... Internal lead.

Claims (1)

[Claims for Utility Model Registration] (1) A hermetically sealed semiconductor device in which a semiconductor element is hermetically sealed between a metal base portion and a cap portion, comprising: a support installed in the metal base; and the support support. two or more metal electrode piece parts each extending from a fulcrum so as to be supported by the metal electrode piece parts and not to have a substantial mechanical influence on each other; A hermetic type semiconductor device, characterized in that a lead is connected to the metal electrode piece, and an internal lead to be connected to the semiconductor element is connected to another part of the metal electrode piece. (2) Claim 1 of the utility model registration characterized in that the metal electrode piece portion is integrally constructed.
The hermetic semiconductor device described in . (3) The metal electrode piece portion to which the inner lead is connected is at least one of the other electrode piece portions.
A hermetic semiconductor device characterized by being configured separately from the other.