JPH0445838A - Vaporizer in liquid material supply system - Google Patents
Vaporizer in liquid material supply systemInfo
- Publication number
- JPH0445838A JPH0445838A JP15127090A JP15127090A JPH0445838A JP H0445838 A JPH0445838 A JP H0445838A JP 15127090 A JP15127090 A JP 15127090A JP 15127090 A JP15127090 A JP 15127090A JP H0445838 A JPH0445838 A JP H0445838A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- carrier gas
- liquid material
- liq
- vaporization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011344 liquid material Substances 0.000 title claims description 30
- 239000006200 vaporizer Substances 0.000 title claims description 10
- 230000008016 vaporization Effects 0.000 claims abstract description 34
- 238000009834 vaporization Methods 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims abstract description 27
- 239000012159 carrier gas Substances 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 18
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 1
- 238000011144 upstream manufacturing Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
本発明は、例えば半導体製造において用いる四塩化ケイ
素（ＳｉＣ，Ｃ，）などのガスを、液体材料を気化する
ことによって供給する液体材料供給システムにおける気
化器に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a liquid material supply system that supplies a gas such as silicon tetrachloride (SiC, C,) used in semiconductor manufacturing by vaporizing a liquid material. Regarding vaporizers.
従来、前記気化器として、第４図（Ａ）に示すように、
内部に液体材料■５が流れる金属製の細＠３１を、ヒー
タ３２を内蔵したヒータブロック３３に対してその一端
側から挿入し、ヒータ３２によって加熱するごとにより
細管３１内において液体材料りを気化し、ヒータブロッ
ク３３の他端側からガスＧを導出するようにしていた。Conventionally, as the vaporizer, as shown in FIG. 4(A),
Insert the thin metal tube 31 into which the liquid material 5 flows from one end into the heater block 33 that has a built-in heater 32, and each time the heater 32 heats the thin metal tube 31, the liquid material evaporates inside the thin tube 31. The gas G was led out from the other end of the heater block 33.
〔発明が解決しようとする課題ｊ
しかしながら１、上記従来技術においては、細管３１内
において気化によって生じたガスＧが、第３図（Ｂ）に
示すように、液体材料りの間に挟まれるようになること
があるが、細管３１内がこのような状態にあるときは圧
力変動が大きくなり、突沸が生しるなどして配管３１が
破壊されることがあるほか、配管３１が破壊されるに至
らないまでも、上流側の液体材料供給ラインにおＬＪる
液体供給が大きく乱されたり、またζ下流側のガス供給
ラインや半導体製造などにおいて不測の事態を招来する
ことがあった。[Problems to be Solved by the Invention] However, 1. In the above-mentioned prior art, the gas G generated by vaporization in the thin tube 31 is sandwiched between the liquid materials as shown in FIG. However, when the inside of the thin tube 31 is in such a state, the pressure fluctuation becomes large, and the piping 31 may be destroyed due to bumping, or the piping 31 may be destroyed. Even if it does not lead to this, the liquid supply to the upstream liquid material supply line may be greatly disturbed, and unforeseen situations may occur in the downstream gas supply line or semiconductor manufacturing.
本発明は、上述の事柄に留意してなされたもので、その
目的とするところは、一定流量で供給される液体の気化
に基づく圧力変動が極めて少なく、液体材料を安定に気
化してこれを安定に供給することができる液体材料供給
システムにおける気化器を提供することにある。The present invention has been made with the above-mentioned considerations in mind, and its purpose is to stably vaporize the liquid material so that pressure fluctuations due to the vaporization of the liquid supplied at a constant flow rate are extremely small. An object of the present invention is to provide a vaporizer in a liquid material supply system that can stably supply liquid materials.
［課題を解決するための手段〕
上述の目的を達成するため、本発明に係る液体÷１料供
給システムにおける気化器は、ヒータを内蔵したヒータ
ブロック内に、内部に熱伝導性および百１腐食性の良好
な粉体を充填してなる気化室を形成し、この気化室の一
端側に、液体材料源に接続され、前記粉体の直径よりも
小さい内径を有する細径部を先端に備えた液体導入管と
、キャリアガス源に接続されたキャリアガス導入管とを
接続すると共に、前記細径部を前記粉体の充填された部
分に挿入する一方、前記気化室の他端側から、気化によ
って生じたガスをキャリアガスによって導出するように
した点に特徴がある。[Means for Solving the Problem] In order to achieve the above-mentioned object, the vaporizer in the liquid/1 material supply system according to the present invention has a heater block with a built-in heater that has internal thermal conductivity and corrosion resistance. A vaporization chamber is formed by filling powder with good properties, and one end of the vaporization chamber is connected to a liquid material source and has a narrow diameter portion at the tip having an inner diameter smaller than the diameter of the powder. While connecting the liquid introduction pipe connected to the carrier gas source and the carrier gas introduction pipe connected to the carrier gas source, and inserting the narrow diameter part into the part filled with the powder, from the other end side of the vaporization chamber, The feature is that the gas generated by vaporization is extracted using a carrier gas.
上記構成によれば、ヒータブロック内に形成された気化
室内に充填された粉体はヒータによって加熱される。そ
して、液体導入管内を流れる液体材料は細径部を経て加
熱された粉体内に導入されて粉体と接触し、その接触面
積が大きいため、液体材料は短時間のうちに気化して所
望のガスになる。従って、突沸が生ずることがなくなり
、」−流側の配管に悪影響が及ぼされることがなくなる
と共に、一定流量で供給される液体が気化しても圧力変
動が殆ど生ずることがな（、しかも、気化により発生じ
たガスはキャリアガスによって速やかに下流側に導出さ
れるので、常に安定した流量の気化ガスを供給すること
ができる。According to the above configuration, the powder filled in the vaporization chamber formed in the heater block is heated by the heater. The liquid material flowing through the liquid introduction pipe is introduced into the heated powder through the narrow diameter part and comes into contact with the powder. Because the contact area is large, the liquid material vaporizes in a short time and produces the desired amount. It becomes gas. Therefore, bumping does not occur, and the piping on the flow side is not adversely affected, and even if the liquid supplied at a constant flow rate is vaporized, there is almost no pressure fluctuation (in addition, the vaporization Since the gas generated is quickly led to the downstream side by the carrier gas, a stable flow rate of vaporized gas can be supplied at all times.
以下、本発明の一実施例を図面を参照しながら説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明に係る気化器の一例を示し、この図にお
いて、１は例えばステンレス鋼など熱伝導性並びに耐腐
食性の良好な金属よりなるパイプで、例えばアルミニウ
ムなど熱伝導性の良好なヒータブｎ ツク２に開設され
た貫通孔３内を挿通ずるよ・うに設けられている。ヒー
タブロック２内にはヒータブロック２およびパイプ１を
加熱するためのヒータ４が内蔵されている。FIG. 1 shows an example of a vaporizer according to the present invention. In this figure, 1 is a pipe made of a metal with good heat conductivity and corrosion resistance, such as stainless steel, and a pipe made of a metal with good heat conductivity, such as aluminum. It is provided so as to be inserted into the through hole 3 formed in the heater tab 2. A heater 4 for heating the heater block 2 and the pipe 1 is built into the heater block 2 .
そして、パイプ１のヒータブロック２内の部分には、熱
伝導性並びに耐腐食性の良好な粉体５が充填されている
と共に、その上流側の入口側には液体導入管８（後述す
る）が挿入してあって、気化室６に形成しである。粉体
５としては例えばステンレス鋼やチタンなどの金属また
はＳｉＣなどのセラミックスを、直径が１００μｍ以上
、好ましくは１２０７１ｍ程度の粉体に形成したものが
用いられる。７Ａ、 ７Ｂは気化室６の両端部近傍に設
けられるメツシブ６体で、粉体５が気化室６から出ない
ようにするためにその網目の大きさは例えば２０μｍ程
度にしてあり、下流側のメツシュ体７Ｂはフィルタとし
ても機能する。The part of the pipe 1 inside the heater block 2 is filled with powder 5 having good thermal conductivity and corrosion resistance, and the upstream inlet side thereof is filled with a liquid introduction pipe 8 (described later). is inserted and formed in the vaporization chamber 6. As the powder 5, for example, a metal such as stainless steel or titanium or a ceramic such as SiC formed into powder having a diameter of 100 μm or more, preferably about 12071 m is used. 7A and 7B are six meshes provided near both ends of the vaporization chamber 6, and in order to prevent the powder 5 from coming out of the vaporization chamber 6, the size of the mesh is, for example, about 20 μm, and The mesh body 7B also functions as a filter.
８は液体材料りを気化室６内に導入するためのキャピラ
リのように細管（内径が例えば０．４ｍｍ）よりなる液
体導入管で、パイプ１の」二流側にこれと同心状に設け
られている。この液体導入管８の上流側は配管９を介し
て液体材料源（図外）に接続され、下流側は第２図にも
示すように、上流側のメツシュ体７Ａを貫通してこのメ
ソシュ体７八よりも下流側、すなわち、気化室６内に突
設され、先端には粉体５の直径よりも小さい内径（例え
ば０．１ｍｍ）を有する細径部１０が形成されており、
この細径部１０は粉体５が充填された部分に挿入されて
いる。Reference numeral 8 denotes a liquid introduction tube made of a thin tube (with an inner diameter of, for example, 0.4 mm) like a capillary for introducing liquid material into the vaporization chamber 6, and is provided concentrically with the second flow side of the pipe 1. There is. The upstream side of this liquid introduction pipe 8 is connected to a liquid material source (not shown) via piping 9, and the downstream side is connected to the mesh body 7A on the upstream side as shown in FIG. A narrow diameter portion 10 is formed on the downstream side of the powder 78, that is, protrudes into the vaporization chamber 6, and has an inner diameter smaller than the diameter of the powder 5 (for example, 0.1 mm) at the tip.
This narrow diameter portion 10 is inserted into a portion filled with powder 5.
なお、細径部１０の下流側の先端とメツシュ体７＾との
距離、すなわち、液体導入管８の粉体５内への挿入長さ
は、例えば粉体充填部分の長さを１５０ｍｍとするとき
、１０〜１５卸が適当である。Note that the distance between the downstream end of the narrow diameter portion 10 and the mesh body 7^, that is, the length of insertion of the liquid introduction tube 8 into the powder 5, is set such that the length of the powder filling portion is 150 mm, for example. In this case, 10 to 15 pieces is appropriate.
再び第１図において、１１は配管９とパイプ１との接続
部分１２と気化室６との間においてパイプ１に接続され
るブロック状の管継手で、熱伝導性並びに耐腐食性の良
好な金属（例えばステンレス鋼）よりなり、その上流側
にはキャリアガス源（図外）に接続された曲がりくねっ
たキャリアガス導入管１３が接続されている。ここで用
いられるキャリアガスとしては、Ｈ２、Ｈｅ、Ｎ２など
がある。また、１４はヒータブロック２．管継手１１お
よびキャリアガス導入管１３を収容するための断熱構造
のハウジングである。１５は気化ガス導出口で、その下
流側には例えば半導体製造装置（図外）が接続されてお
り、また、１６はキャリアガス導入口である。Referring again to FIG. 1, reference numeral 11 denotes a block-shaped pipe joint that is connected to the pipe 1 between the connection portion 12 between the pipe 9 and the pipe 1 and the vaporization chamber 6, and is made of a metal having good thermal conductivity and corrosion resistance. (for example, stainless steel), and a winding carrier gas introduction pipe 13 connected to a carrier gas source (not shown) is connected to its upstream side. Carrier gases used here include H2, He, N2, and the like. 14 is a heater block 2. This is a housing with a heat-insulating structure for accommodating a pipe joint 11 and a carrier gas introduction pipe 13. Reference numeral 15 denotes a vaporized gas outlet, to which, for example, semiconductor manufacturing equipment (not shown) is connected on the downstream side, and 16 denotes a carrier gas inlet.
而して、上記構成の気化器の動作について説明すると、
先ず、ヒータ４を発熱させて気化室６内に充填された粉
体５を所定の温度に加熱する。この状態において、キャ
リアガスをキャリアガス導入管１３を経てパイプｌ内に
導入しながら液体導入管８を介して液体材料りを気化室
６に導入する。Now, to explain the operation of the vaporizer with the above configuration,
First, the heater 4 is made to generate heat to heat the powder 5 filled in the vaporization chamber 6 to a predetermined temperature. In this state, the carrier gas is introduced into the pipe 1 through the carrier gas introduction pipe 13, and the liquid material is introduced into the vaporization chamber 6 through the liquid introduction pipe 8.
このとき、液体材料１７は細径部１０を経て加熱された
粉体５内に導入されて粉体５と接触し、その接触面積が
大きいため、液体材料りは短時間のろうに気化し７て所
望のガスになる。この場合、液体導入管８内を流れてき
た液体材料Ｉ、はこれよりも小径の細径部１０を経て粉
体５側に流れ出るので、突沸することがなくスムーズに
気化が行われると共に、気化によって圧力上昇が生じて
も、その圧力は細径部１０によって緩和されるので、上
流側には圧力上昇圧が急激に伝わることがなく、従、っ
て、液体材料■、を供給するラインへの悪影響がなぐな
る。そして、前記気化により発生じたガスは、パイプ１
およびメツシュ体７八を経て気化室６内に導入されてい
るキャリアガスによって速やかに下流側に導出され、下
流側の半導体製造装置（図外）に気化ガスを供給するこ
とができる。そして、液体材料りの供給量を変えても、
第３図に示すように、常に安定した流量の気化ガスを供
給することができる。また、液体材料りの供給を停止し
た場合、キャリアガスによるパージ効果により、第３図
のｐ部分に示すように、速やかな立ち下がりが得られる
。At this time, the liquid material 17 is introduced into the heated powder 5 through the narrow diameter part 10 and comes into contact with the powder 5, and since the contact area is large, the liquid material evaporates into wax for a short time 7 the desired gas. In this case, the liquid material I flowing through the liquid introduction pipe 8 flows out to the powder 5 side through the narrow diameter part 10 having a smaller diameter than this, so that the vaporization is performed smoothly without bumping, and the vaporization is Even if a pressure increase occurs, the pressure is alleviated by the narrow diameter portion 10, so the pressure increase will not be rapidly transmitted to the upstream side, and therefore, to the line that supplies the liquid material. The negative effects of Then, the gas generated by the vaporization is transferred to the pipe 1
The carrier gas introduced into the vaporization chamber 6 through the mesh body 78 is quickly led out to the downstream side, and the vaporized gas can be supplied to semiconductor manufacturing equipment (not shown) on the downstream side. And even if you change the supply amount of liquid material,
As shown in FIG. 3, a stable flow rate of vaporized gas can be supplied at all times. Furthermore, when the supply of the liquid material is stopped, due to the purge effect of the carrier gas, a rapid fall can be obtained as shown in the section p in FIG. 3.
また、上記実施例においては、ヒータブし１ツク２、管
継手１１およびキャリアガス導入管１３が断熱構造のハ
ウジング１４内に設けであるので、外周の温度に影響さ
れることなく、液体材料Ｉ、の気化が行われ、特に、キ
ャリアガス導入管１３がヒータブロック２からの輻射熱
によって加熱され、キャリアガスがある程度の温度に保
温されているので、気化ガスとの温度差がほとんどなく
、従って、気化ガスが冷却されて液化されるといったこ
とが防止される。Further, in the above embodiment, since the heater shaft 1, the pipe joint 11, and the carrier gas introduction pipe 13 are provided in the housing 14, which has a heat-insulating structure, the liquid material I, In particular, since the carrier gas introduction pipe 13 is heated by radiant heat from the heater block 2 and the carrier gas is kept at a certain temperature, there is almost no temperature difference between the carrier gas and the vaporized gas. This prevents the gas from being cooled and liquefied.
上述の上流側においては、ヒータブロック２内にパイプ
１を挿通し、その挿通部分を気化室６としていたが、ヒ
ータブロック２に設けた貫通孔３そのものを気化室とし
、その上流側および下流側にパイプ１を接続するように
してもよい。また、細径部１０を含む液体導入管８を管
継手１１に対して着脱自在に取付けられるようにし、液
体材料りやその流量などに合わせた内径を有する液体導
入管８を使用できるようにしてもよい。On the above-mentioned upstream side, the pipe 1 was inserted into the heater block 2, and the insertion part was used as the vaporization chamber 6, but the through hole 3 provided in the heater block 2 itself was used as the vaporization chamber, and the upstream and downstream sides of the pipe 1 were inserted into the heater block 2. The pipe 1 may be connected to. Furthermore, the liquid introduction pipe 8 including the narrow diameter portion 10 may be detachably attached to the pipe joint 11, so that the liquid introduction pipe 8 having an inner diameter that matches the liquid material and its flow rate can be used. good.
〔発明の効果］
本発明に係る液体材料供給システムにおける気化器は以
上のように構成されるので、液体の気化に基づく圧力変
動が極めて少なく、液体材料を安定に気化してこれを安
定に供給することができ、また、液体材料を供給するラ
インに悪影響が及ぼされることがない。[Effects of the Invention] Since the vaporizer in the liquid material supply system according to the present invention is configured as described above, pressure fluctuations due to vaporization of the liquid are extremely small, and the liquid material can be stably vaporized and stably supplied. In addition, the line that supplies the liquid material will not be adversely affected.
第１図は本発明に係る液体材料（Ｊｊ給給入ステムおけ
る気化器の一例を示す図、第２図はその要部を拡大して
示す部分断面図、第３図は前記気化器の気化特性を示す
図である。
第４図は従来技術を説明するための図で、同図（Ａ）は
従来の気化器を示す図、同図（Ｂ）はその問題点を説明
するための図である。
２・・・ヒータブロック、４・・・ヒータ、５・・・粉
体、６・・・気化室、８・・・液体導入管、１０・・・
細径部、１３・・キャリアガス導入管。FIG. 1 is a diagram showing an example of a vaporizer in a liquid material (Jj supply stem) according to the present invention, FIG. 4 is a diagram showing the characteristics. FIG. 4 is a diagram for explaining the prior art, where (A) is a diagram showing a conventional carburetor, and FIG. 4 (B) is a diagram for explaining the problems thereof. 2... Heater block, 4... Heater, 5... Powder, 6... Vaporization chamber, 8... Liquid introduction pipe, 10...
Narrow diameter part, 13...Carrier gas introduction pipe.
Claims (1)
性および耐腐食性の良好な粉体を充填してなる気化室を
形成し、この気化室の一端側に、液体材料源に接続され
、前記粉体の直径よりも小さい内径を有する細径部を先
端に備えた液体導入管と、キャリアガス源に接続された
キャリアガス導入管とを接続すると共に、前記細径部を
前記粉体の充填された部分に挿入する一方、前記気化室
の他端側から、気化によって生じたガスをキャリアガス
によって導出するようにしたことを特徴とする液体材料
供給システムにおける気化器。A vaporizing chamber is formed in a heater block containing a built-in heater by filling powder with good thermal conductivity and corrosion resistance, and one end of the vaporizing chamber is connected to a liquid material source and the A liquid introduction tube having a narrow diameter section at the tip having an inner diameter smaller than the diameter of the powder is connected to a carrier gas introduction tube connected to a carrier gas source, and the narrow diameter section is filled with the powder. 1. A vaporizer for a liquid material supply system, characterized in that the vaporizer is inserted into a portion of the vaporization chamber, while the gas generated by vaporization is led out from the other end side of the vaporization chamber by means of a carrier gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2151270A JP2946347B2 (en) | 1990-06-09 | 1990-06-09 | Vaporizer in liquid material supply system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2151270A JP2946347B2 (en) | 1990-06-09 | 1990-06-09 | Vaporizer in liquid material supply system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0445838A true JPH0445838A (en) | 1992-02-14 |
| JP2946347B2 JP2946347B2 (en) | 1999-09-06 |
Family
ID=15515000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2151270A Expired - Lifetime JP2946347B2 (en) | 1990-06-09 | 1990-06-09 | Vaporizer in liquid material supply system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2946347B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011000518A (en) * | 2009-06-17 | 2011-01-06 | Tomokazu Kanda | Cylinder device having ceramic composite and coating liquid circulation system using the cylinder device |
| CN112585298A (en) * | 2018-07-24 | 2021-03-30 | 琳科技股份有限公司 | Vaporizer |
| US11274367B2 (en) | 2018-07-24 | 2022-03-15 | Lintec Co., Ltd. | Vaporizer |
-
1990
- 1990-06-09 JP JP2151270A patent/JP2946347B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011000518A (en) * | 2009-06-17 | 2011-01-06 | Tomokazu Kanda | Cylinder device having ceramic composite and coating liquid circulation system using the cylinder device |
| CN112585298A (en) * | 2018-07-24 | 2021-03-30 | 琳科技股份有限公司 | Vaporizer |
| CN112585298B (en) * | 2018-07-24 | 2021-11-23 | 琳科技股份有限公司 | Gasifier |
| US11274367B2 (en) | 2018-07-24 | 2022-03-15 | Lintec Co., Ltd. | Vaporizer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2946347B2 (en) | 1999-09-06 |
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