JPH0446250B2 - - Google Patents
Info
- Publication number
- JPH0446250B2 JPH0446250B2 JP59251799A JP25179984A JPH0446250B2 JP H0446250 B2 JPH0446250 B2 JP H0446250B2 JP 59251799 A JP59251799 A JP 59251799A JP 25179984 A JP25179984 A JP 25179984A JP H0446250 B2 JPH0446250 B2 JP H0446250B2
- Authority
- JP
- Japan
- Prior art keywords
- hours
- zsm
- benzene
- catalyst
- ray diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 39
- 238000002441 X-ray diffraction Methods 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 13
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 11
- 239000005977 Ethylene Substances 0.000 claims description 11
- 238000010586 diagram Methods 0.000 claims description 3
- 230000006203 ethylation Effects 0.000 claims 1
- 238000006200 ethylation reaction Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HMJBXEZHJUYJQY-UHFFFAOYSA-N 4-(aminomethyl)octane-1,8-diamine Chemical compound NCCCCC(CN)CCCN HMJBXEZHJUYJQY-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012456 homogeneous solution Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- HYFLWBNQFMXCPA-UHFFFAOYSA-N 1-ethyl-2-methylbenzene Chemical compound CCC1=CC=CC=C1C HYFLWBNQFMXCPA-UHFFFAOYSA-N 0.000 description 1
- QGZIXMPFNRRILC-UHFFFAOYSA-N 4-butylpentane-1,1,5-triamine Chemical compound CCCCC(CN)CCC(N)N QGZIXMPFNRRILC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- BGQMOFGZRJUORO-UHFFFAOYSA-M tetrapropylammonium bromide Chemical compound [Br-].CCC[N+](CCC)(CCC)CCC BGQMOFGZRJUORO-UHFFFAOYSA-M 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
Landscapes
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
(産業上の利用分野)
本発明は、スチレンの原料として有用なエチル
ベンゼンを選択的に製造する方法に関するもので
ある。
(従来の技術)
ベンゼンを気相においてエチル化する方法に関
しては、近年、モービルオイル社が開発した、触
媒として結晶性アルミノシリケートZSM−5を
用いる方法(特公昭56−44050号参照)が知られ
ている。しかしながら、ZSM−5をそのまま触
媒として使用した場合、トルエン、エチルトルエ
ン等の副生物が多いため実用的ではなく、モービ
ルオイル社では、ZSM−5をリンの酸化物で処
理した触媒を用いる方法(特開昭51−57688号参
照)を提案しており、実際にこの触媒を用いてモ
ービルーバジヤー法として知られるプロセスが企
業化されている。
(発明が解決しようとする問題点)
しかしながら、リンの酸化物で処理したZSM
−5を用いる方法は、確かにエチルベンゼン、ジ
エチルベンゼンへの選択率は高く、97%に達する
ものもあるが、99%近い極めて高い選択率の実現
は困難であり、また、活性が低いという問題があ
つた。
(問題点を解決するための手段)
本発明者らは、エチルベンゼン、ジエチルベン
ゼンへの選択率が99%近い高選択率で高活性な触
媒を開発すべく鋭意検討を重ねた結果、X線回折
図において表1の回折パターンを有する結晶性ボ
ロシリケートを触媒として用いる場合に、99%近
い極めて高い選択率でエチルベンゼンおよびジエ
チルベンゼンが得られることを見い出し、本発明
を完成するに至つた。
(Industrial Application Field) The present invention relates to a method for selectively producing ethylbenzene, which is useful as a raw material for styrene. (Prior art) Regarding the method of ethylating benzene in the gas phase, a method using crystalline aluminosilicate ZSM-5 as a catalyst (see Japanese Patent Publication No. 56-44050) developed by Mobil Oil Company in recent years is known. ing. However, if ZSM-5 is used as a catalyst as it is, it is not practical because it produces many by-products such as toluene and ethyltoluene.Mobil Oil Co., Ltd. has developed a method using a catalyst in which ZSM-5 is treated with phosphorus oxide ( (Refer to Japanese Patent Application Laid-Open No. 51-57688), and a process known as the Mobile-Basier process has actually been commercialized using this catalyst. (Problem to be solved by the invention) However, ZSM treated with phosphorus oxide
The method using -5 does have a high selectivity to ethylbenzene and diethylbenzene, reaching 97% in some cases, but it is difficult to achieve extremely high selectivity close to 99%, and there is also the problem of low activity. It was hot. (Means for Solving the Problems) The present inventors have made intensive studies to develop a highly active catalyst with a selectivity to ethylbenzene and diethylbenzene close to 99%, and as a result, the X-ray diffraction diagram It was discovered that when a crystalline borosilicate having the diffraction pattern shown in Table 1 is used as a catalyst, ethylbenzene and diethylbenzene can be obtained with an extremely high selectivity of nearly 99%, leading to the completion of the present invention.
【表】
ただし、X線回折分析はCuKα線を用いて測定
する。
すなわち、本発明は、ベンゼンを気相において
エチレンと反応させる際に、触媒としてX線回折
図において表1に示される回折パターンを有する
結晶性ボロシリケートを用いることを特徴とする
ベンゼンの気相エチル化法を提供するものであ
る。
本発明に用いられる表1に示される回折パター
ンを有する結晶性ボロシリケートとは、AZ−2
(特願昭59−84169号参照)と呼ばれる特異な結晶
構造を有する結晶性ボロシリケートである。
本発明に用いられる結晶性ボロシリケートは、
シリカ供給物質、アルミナ供給物質、酸化ホウ素
供給物質、ナトリウム供給物質、水および1,8
−ジアミノ−4−アミノメチルオクタンを含有
し、かつそれぞれの成分モル比が下記の範囲であ
る組成物を100〜250℃の温度に加熱して、結晶が
生成するのに十分な時間反応させることによつて
製造される。
Na/SiO2=0.01〜0.5
H2O/SiO2=2〜100
1,8−ジアミノ−4−アミノメチルオクタ
ン/SiO2=0.1〜10
Al2O3/SiO2=0〜0.05
B2O3/SiO2=0.005〜0.5
このようにして得られる結晶性ボロシリケート
AZ−2は、従来知られているボロシリケート、
例えば、ゼオライトZSM−5類似のボロシリケ
ート(特開昭53−55500参照)とは明らかに異な
るX線回折パターンを有する。
表2に、上記の方法により製造される結晶性ボ
ロシリケートAZ−2、特開昭53−5550号に基づ
いて製造したゼオライトZSM−5類似の結晶性
ボロシリケートのX線回折データの一例を示し
た。[Table] However, X-ray diffraction analysis uses CuKα rays. That is, the present invention is characterized in that a crystalline borosilicate having a diffraction pattern shown in Table 1 in an X-ray diffraction diagram is used as a catalyst when benzene is reacted with ethylene in a gas phase. It provides a method of conversion. The crystalline borosilicate having the diffraction pattern shown in Table 1 used in the present invention is AZ-2
It is a crystalline borosilicate with a unique crystal structure called (see Japanese Patent Application No. 59-84169). The crystalline borosilicate used in the present invention is
Silica feed material, alumina feed material, boron oxide feed material, sodium feed material, water and 1,8
- Heating a composition containing diamino-4-aminomethyloctane and having a molar ratio of each component in the following range to a temperature of 100 to 250°C and reacting for a sufficient time to form crystals. Manufactured by. Na/ SiO2 = 0.01 to 0.5 H2O / SiO2 = 2 to 100 1,8-diamino-4-aminomethyloctane/ SiO2 = 0.1 to 10 Al2O3 / SiO2 = 0 to 0.05 B2O 3 /SiO 2 =0.005-0.5 Crystalline borosilicate obtained in this way
AZ-2 is a conventionally known borosilicate,
For example, it has an X-ray diffraction pattern that is clearly different from that of borosilicate (see JP-A-53-55500), which is similar to zeolite ZSM-5. Table 2 shows an example of X-ray diffraction data of crystalline borosilicate AZ-2 produced by the above method and crystalline borosilicate similar to zeolite ZSM-5 produced based on JP-A-53-5550. Ta.
【表】
表2から明らかなように、本発明のAZ−2は、
ZSM−5類似の結晶性ボロシリケートと比較し
て、各ピークの相対強度が顕著に異なることがわ
かる。特にAZ−2の最強ピークが2θ=8.9゜である
のに対して、ZSM−5類似ボロシリケートのそ
れは23.2゜であり、両者の各X線回折パターンに
おける2θ=8.9゜と23.2゜の強度比を求めると、AZ
−2はZSM−5類似ボロシリケートの約5倍と
なる。また、両者の回折角(2θ)7.9゜と8.9゜の強
度比が顕著に異なつている。すなわち、ZSM−
5類似ボロシリケートの2θ=7.9゜に対する8.9゜の
強度比が約0.8であるのに対し、AZ−2のそれは
約5であり、両者の強度比の差異は約6倍となつ
ている。
本発明における反応温度は200〜600℃、好まし
くは300〜500℃の範囲である。また、圧力は常圧
または加圧で行なわれるが、好ましい範囲は、常
圧〜20Kg/cm2の範囲である。
本発明は、気相流通法で行なわれるが、その
際、ベンゼンとエチレンのみ、または窒素、水素
等の希釈剤を用いて行うことができる、特に希釈
剤として水素を用いる場合には、活性低下が極め
て小さくなるという利点を有するため好ましい。
本発明におけるベンゼン/エチレンモル比は1
〜20、好ましくは2〜10の範囲で行なわれる。ま
た、希釈剤として水素を用いる場合の水素/エチ
レンモル比は0.5〜20、好ましくは1〜10の範囲
で行なわれる。
(発明の効果)
本発明の方法によれば、従来のリンの酸化物で
処理したZSM−5を触媒として用いる方法に比
べて、高収率で、しかも、極めて高い選択率でエ
チルベンゼンおよびジエチルベンゼンを得ること
ができる。このことは、工業的に実施する際に極
めて有利になる。
(実施例)
実施例 1
1,8−ジアミノ−4−アミノメチルオクタン
20g、ホウ酸(H3BO3)0.5g、水酸化ナトリウ
ム1gを水34gに溶かし、さらに、シリカゾル
(30重量%SiO2)40gを加えて均質な溶液を得
た。この溶液に、かきまぜながら20%硫酸8gを
滴下して均質なゲルを得た。さらに、このゲルを
ホモジナイザー中で10000rpmで高速撹拌した後、
テフロン内張り耐圧容器中で180℃、70時間静置
して結晶化を行つた。
得られた生成物を過洗浄した後、120℃で5
時間乾燥して、さらに500℃で6時間空気中で焼
成した後のX線回折パターンを第1図に示す。
この回折パターンより、この生成物は、結晶性
ボロシリケートAZ−2と同定された。また、化
学分析から求めたSiO2/B2O3モル比は30であつ
た。
この結晶性ボロシリケートAZ−2を触媒とし
て用い、ベンゼンとエチレンの反応を行つた。実
験条件は、ベンゼン/エチレンモル比=4.0、
WHSV(ベンゼン基準)=4.0hr-1、反応温度400
℃、常圧で行つた。
反応開始後、2時間と6時間の結果を表3に示
す。[Table] As is clear from Table 2, AZ-2 of the present invention is
It can be seen that the relative intensity of each peak is significantly different compared to ZSM-5 similar crystalline borosilicate. In particular, the strongest peak of AZ-2 is 2θ = 8.9°, while that of ZSM-5 similar borosilicate is 23.2°, and the intensity ratio of 2θ = 8.9° and 23.2° in each X-ray diffraction pattern of both. AZ
-2 is about 5 times that of ZSM-5 similar borosilicate. In addition, the intensity ratio between the two diffraction angles (2θ) of 7.9° and 8.9° is significantly different. That is, ZSM−
The intensity ratio of 2θ=8.9° to 2θ=7.9° for 5-similar borosilicate is about 0.8, whereas that of AZ-2 is about 5, and the difference in intensity ratio between the two is about 6 times. The reaction temperature in the present invention is in the range of 200 to 600°C, preferably 300 to 500°C. Further, the pressure may be normal pressure or increased pressure, and a preferable range is normal pressure to 20 kg/cm 2 . The present invention is carried out by a gas phase flow method, but it can be carried out using only benzene and ethylene or a diluent such as nitrogen or hydrogen. Particularly when hydrogen is used as a diluent, the activity may be reduced. This is preferable because it has the advantage that it becomes extremely small. The benzene/ethylene molar ratio in the present invention is 1
-20, preferably 2-10. Further, when hydrogen is used as a diluent, the hydrogen/ethylene molar ratio is in the range of 0.5 to 20, preferably 1 to 10. (Effects of the Invention) According to the method of the present invention, ethylbenzene and diethylbenzene can be produced with higher yield and extremely high selectivity compared to the conventional method using ZSM-5 treated with phosphorus oxide as a catalyst. Obtainable. This becomes extremely advantageous in industrial implementation. (Example) Example 1 1,8-diamino-4-aminomethyloctane
20 g of boric acid (H 3 BO 3 ), and 1 g of sodium hydroxide were dissolved in 34 g of water, and 40 g of silica sol (30% by weight SiO 2 ) was further added to obtain a homogeneous solution. 8 g of 20% sulfuric acid was added dropwise to this solution while stirring to obtain a homogeneous gel. Furthermore, after stirring this gel at high speed at 10,000 rpm in a homogenizer,
Crystallization was carried out by standing at 180°C for 70 hours in a Teflon-lined pressure vessel. After overwashing the obtained product, it was incubated at 120°C for 5
FIG. 1 shows the X-ray diffraction pattern after drying for an hour and then calcining in air at 500° C. for 6 hours. From this diffraction pattern, this product was identified as crystalline borosilicate AZ-2. Further, the SiO 2 /B 2 O 3 molar ratio determined from chemical analysis was 30. Using this crystalline borosilicate AZ-2 as a catalyst, benzene and ethylene were reacted. The experimental conditions were: benzene/ethylene molar ratio = 4.0;
WHSV (benzene standard) = 4.0hr -1 , reaction temperature 400
The test was carried out at ℃ and normal pressure. Table 3 shows the results 2 hours and 6 hours after the start of the reaction.
【表】
実施例 2
実施例1で得られた触媒を用いて、ベンゼン/
エチレンモル比=2、WHSV=6.0hr-1、反応温
度420℃、常圧で反応を行つた。
反応開始後、4時間の成積を表4に示す。[Table] Example 2 Using the catalyst obtained in Example 1, benzene/
The reaction was carried out at an ethylene molar ratio of 2, a WHSV of 6.0 hr -1 , a reaction temperature of 420° C., and normal pressure. Table 4 shows the results for 4 hours after the start of the reaction.
【表】
実施例 3
実施例1で得られた触媒を用いて、ベンゼン/
エチレン/H2モル比=4/1/4、WHSV=
4.0hr-1、反応温度420℃、圧力3Kg/cm2(ゲージ
圧)で行つた。
反応開始後、3時間、80時間、170時間の成積
を表5に示す。[Table] Example 3 Using the catalyst obtained in Example 1, benzene/
Ethylene/ H2 molar ratio = 4/1/4, WHSV =
The reaction time was 4.0 hr -1 , the reaction temperature was 420°C, and the pressure was 3 Kg/cm 2 (gauge pressure). Table 5 shows the results for 3 hours, 80 hours, and 170 hours after the start of the reaction.
【表】
実施例 4
1,8−ジアミノ−4−アミノメチルオクタン
640g、ホウ酸16g、水酸化ナトリウム32gを水
1100gに加えて均質な溶液を得た。この溶液にシ
リカゾル(30重量%SiO2)1300gを撹拌しなが
ら加え、均質な溶液を得た。さらに、この溶液に
20%硫酸260gを加え、ミキサー中で5000rpmで
高速撹拌して均質なゲルを得た。得られたゲルを
テフロン内張りオートクレーブに仕込み、170℃
で90時間結晶化させた。
得られた生成物を過洗浄した後、120℃で5
時間乾燥し、500℃で8時間空気中で焼成した後
のX線回折パターンを第2図に示す。
この回折パターンより、この生成物は、AZ−
2と同定された。また、化学分析によつて求めた
この生成物をSiO2/B2O3モル比は45であつた。
この結晶性ボロシリケートAZ−2を用いて、
ベンゼン/エチレンの/H2モル比=5/1/3、
WHSV=6.0hr-1、反応温度440℃、圧力5Kg/cm2
(ゲージ圧)で反応を行つた。
反応開始後、20時間、60時間の成積を表6に示
す。[Table] Example 4 1,8-diamino-4-aminomethyloctane
640g, boric acid 16g, sodium hydroxide 32g with water
A homogeneous solution was obtained in addition to 1100 g. To this solution, 1300 g of silica sol (30% by weight SiO 2 ) was added with stirring to obtain a homogeneous solution. Furthermore, this solution
260 g of 20% sulfuric acid was added and stirred at high speed at 5000 rpm in a mixer to obtain a homogeneous gel. The resulting gel was placed in a Teflon-lined autoclave and heated to 170°C.
It was crystallized for 90 hours. After overwashing the obtained product, it was incubated at 120°C for 5
The X-ray diffraction pattern after drying for an hour and calcining in air at 500° C. for 8 hours is shown in FIG. From this diffraction pattern, this product is AZ-
It was identified as 2. Further, the SiO 2 /B 2 O 3 molar ratio of this product determined by chemical analysis was 45. Using this crystalline borosilicate AZ-2,
Benzene/ethylene/ H2 molar ratio = 5/1/3,
WHSV=6.0hr -1 , reaction temperature 440℃, pressure 5Kg/ cm2
(gauge pressure). Table 6 shows the buildup at 20 hours and 60 hours after the start of the reaction.
【表】
比較例
水350gに硫酸アルミニウム5gとテトラプロ
ピルアンモニウムブロミド10gを溶かし、さらに
Q brandケイ酸塩水溶液(Na2O=8.9重量%、
SiO2=28.9重量%、H2O=62.2重量%)150gを
加え、かきまぜて均質なゲルを得た。このゲル
に、20%H2SO450gをかきまぜながら滴下して
ゲル化を促進させた。このゲルをテフロン内張り
オートクレーブに入れ、150℃で20時撹拌しなが
ら結晶化させた。
得られた生成物を過洗浄後、120℃で3時間
乾燥し、500℃で4時間空気中で焼成を行つた。
この生成物のX線回折パターンは、ZSM−5
の回折パターンと一致した。また、螢光X線分析
より求めたシリカ/アルミナモル比は50であつ
た。
このZSM−5を1N塩化アンモニウム水溶液で
60℃、24時間イオン交換を行つた後、過、洗
浄、120℃で6時間乾燥後、500℃で5時間空気焼
成して、H−ZSM−5を得た。
得られたH−ZSM−5 10gを、フラスコで
n−オクタン50c.c.にトリメチルフオスフアイト4
c.c.を溶解した溶液に加えた。窒素を徐々に流しな
がら、この混合物を還流温度で80時間加熱した。
その後、この混合物を蒸発乾固して、得られた固
体をペンタンで洗浄した後、120℃で10時間乾燥、
500℃で3時間焼成した。
得られた生成物のリン酸化物の担持量は8.2重
量%であつた。
このリン含有H−ZSM−5を触媒に用いて、
ベンゼン/エチレンモル比=5.5、WHSV=
4.0hr-1、反応温度420℃、常圧で反応を行つた。
反応開始後、4時間の成積を表7に示す。[Table] Comparative example Dissolve 5 g of aluminum sulfate and 10 g of tetrapropylammonium bromide in 350 g of water, and add Q brand silicate aqueous solution (Na 2 O = 8.9% by weight,
150 g of SiO 2 =28.9% by weight, H 2 O = 62.2% by weight) was added and stirred to obtain a homogeneous gel. 50 g of 20% H 2 SO 4 was added dropwise to this gel while stirring to promote gelation. This gel was placed in a Teflon-lined autoclave and crystallized at 150°C for 20 hours with stirring. After over-washing the obtained product, it was dried at 120°C for 3 hours and calcined in air at 500°C for 4 hours. The X-ray diffraction pattern of this product is ZSM-5
It matched the diffraction pattern of Further, the silica/alumina molar ratio determined by fluorescent X-ray analysis was 50. This ZSM-5 was added to a 1N ammonium chloride aqueous solution.
After ion exchange at 60°C for 24 hours, the product was filtered, washed, dried at 120°C for 6 hours, and air-calcined at 500°C for 5 hours to obtain H-ZSM-5. 10 g of the obtained H-ZSM-5 was mixed with 4 ml of trimethyl phosphorite in 50 c.c. of n-octane in a flask.
cc was added to the solution. The mixture was heated at reflux temperature for 80 hours with a gradual flow of nitrogen.
The mixture was then evaporated to dryness, the resulting solid was washed with pentane, and then dried at 120°C for 10 hours.
It was baked at 500°C for 3 hours. The amount of phosphoric oxide supported in the obtained product was 8.2% by weight. Using this phosphorus-containing H-ZSM-5 as a catalyst,
Benzene/ethylene molar ratio=5.5, WHSV=
The reaction was carried out at 4.0 hr −1 , reaction temperature 420° C., and normal pressure. Table 7 shows the results for 4 hours after the start of the reaction.
【表】【table】
第1図は実施例1で得られた結晶性ボロシリケ
ートのX線回折パターン、第2図は実施例4で得
られた結晶性ボロシリケートのX線回折パターン
を示す。
FIG. 1 shows the X-ray diffraction pattern of the crystalline borosilicate obtained in Example 1, and FIG. 2 shows the X-ray diffraction pattern of the crystalline borosilicate obtained in Example 4.
Claims (1)
る際に、触媒としてX線回折図において下表の回
折パターンを有する結晶性ボロシリケートを用い
ることを特徴とするベンゼンの気相エチル化法。 【表】 ただし、X線回折分析はCuKα線を用いて測定
する。[Claims] 1. Gas-phase ethylation of benzene, characterized in that a crystalline borosilicate having a diffraction pattern shown in the table below in an X-ray diffraction diagram is used as a catalyst when benzene is reacted with ethylene in the gas phase. Law. [Table] However, X-ray diffraction analysis uses CuKα rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251799A JPS61130243A (en) | 1984-11-30 | 1984-11-30 | Method of ethylation of benzene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251799A JPS61130243A (en) | 1984-11-30 | 1984-11-30 | Method of ethylation of benzene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61130243A JPS61130243A (en) | 1986-06-18 |
| JPH0446250B2 true JPH0446250B2 (en) | 1992-07-29 |
Family
ID=17228097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59251799A Granted JPS61130243A (en) | 1984-11-30 | 1984-11-30 | Method of ethylation of benzene |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61130243A (en) |
-
1984
- 1984-11-30 JP JP59251799A patent/JPS61130243A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61130243A (en) | 1986-06-18 |
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