JPH0446776U - - Google Patents
Info
- Publication number
- JPH0446776U JPH0446776U JP1990088405U JP8840590U JPH0446776U JP H0446776 U JPH0446776 U JP H0446776U JP 1990088405 U JP1990088405 U JP 1990088405U JP 8840590 U JP8840590 U JP 8840590U JP H0446776 U JPH0446776 U JP H0446776U
- Authority
- JP
- Japan
- Prior art keywords
- preamplifier
- fet
- shotgun
- silicon
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000003384 imaging method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Picture Signal Circuits (AREA)
- Amplifiers (AREA)
Description
第１図は本考案の前置増幅器の基本構成を示す
ブロツク図、第２図は本考案の一実施例を示す回
路図である。
Ｄ１……Ｓｉ ＳＢＤ，Ｑ１……ＧａＡｓ ＦＥ
Ｔ，Ａ１……非反転増幅器、Ｑ２〜Ｑ５…… ト
ランジスタ、Ｒｆ……帰還抵抗、Ｔ……撮像管信
号電極、ＩＴ……撮像管信号電流、ＶＯ……出力
電圧、ＶＣＣ、ＶＥＥ……電圧源。
FIG. 1 is a block diagram showing the basic configuration of a preamplifier according to the present invention, and FIG. 2 is a circuit diagram showing an embodiment of the present invention. D1...Si SBD, Q1...GaAs FE
T, A1...Non-inverting amplifier, Q2-Q5...Transistor, Rf ...Feedback resistor, T...Image tube signal electrode, IT...Image tube signal current, VO...Output voltage, VCC, VEE... voltage source.
Claims (1)
、該前置増幅器の初段にガリウム・ヒ素ＦＥＴを
用い、該ガリウム・ヒ素ＦＥＴのゲートにシリコ
ンシヨツトキバリアダイオードのアノードを接続
し、上記ガリウム・ヒ素ＦＥＴのソースに上記シ
リコンシヨツトキバリアダイオードのカソードを
接続する構成としたことを特徴とする前置増幅器
。 In a preamplifier of an imaging device using an image pickup tube, a gallium arsenide FET is used in the first stage of the preamplifier, and the anode of a silicon shotgun barrier diode is connected to the gate of the gallium arsenide FET. A preamplifier characterized in that the cathode of the silicon shotgun barrier diode is connected to the source of the FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990088405U JPH0446776U (en) | 1990-08-27 | 1990-08-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990088405U JPH0446776U (en) | 1990-08-27 | 1990-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0446776U true JPH0446776U (en) | 1992-04-21 |
Family
ID=31821622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990088405U Pending JPH0446776U (en) | 1990-08-27 | 1990-08-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0446776U (en) |
-
1990
- 1990-08-27 JP JP1990088405U patent/JPH0446776U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0446776U (en) | ||
| JPS5818333Y2 (en) | Zoufuku Cairo | |
| JPH0377519U (en) | ||
| JPH0732261B2 (en) | Semiconductor light receiving device | |
| JPS62202621U (en) | ||
| JP2518320Y2 (en) | Junction type FET input buffer | |
| JPH01124708U (en) | ||
| JPS6244567U (en) | ||
| JPH0454100U (en) | ||
| JPH01100520U (en) | ||
| JPH03117930U (en) | ||
| JPH03115415U (en) | ||
| JPS6162421U (en) | ||
| JPH047337U (en) | ||
| JPS63114507U (en) | ||
| JPH02816U (en) | ||
| JPH01137629U (en) | ||
| JPS62103311U (en) | ||
| JPS6381518U (en) | ||
| JPH0415310U (en) | ||
| JPS63114512U (en) | ||
| JPS61206313U (en) | ||
| JPS6214818U (en) | ||
| JPH02113425U (en) | ||
| JPS63114508U (en) |