JPH047337U - - Google Patents

Info

Publication number
JPH047337U
JPH047337U JP4788190U JP4788190U JPH047337U JP H047337 U JPH047337 U JP H047337U JP 4788190 U JP4788190 U JP 4788190U JP 4788190 U JP4788190 U JP 4788190U JP H047337 U JPH047337 U JP H047337U
Authority
JP
Japan
Prior art keywords
fet
source
switch
drain
parasitic diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4788190U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4788190U priority Critical patent/JPH047337U/ja
Publication of JPH047337U publication Critical patent/JPH047337U/ja
Pending legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の温度測定装置の一実施例の構
成を示す回路図、第2図は、温度測定の手順を示
すフローチヤート、第3図は第1図における寄生
ダイオードの特性図である。 1……FET、5……寄生ダイオード、6……
定電圧源、7……スイツチ。
Fig. 1 is a circuit diagram showing the configuration of an embodiment of the temperature measuring device of the present invention, Fig. 2 is a flowchart showing the temperature measurement procedure, and Fig. 3 is a characteristic diagram of the parasitic diode in Fig. 1. . 1... FET, 5... Parasitic diode, 6...
Constant voltage source, 7... switch.

Claims (1)

【実用新案登録請求の範囲】 電界効果トランジスタFETを用いた増幅回路
であつて、 前記FETのソース・ドレーン間に接続された
寄生ダイオードと、 前記FETのソース・ドレーン間に逆バイアス
電圧を供給する定電圧源と、 前記逆バイアス電圧をオン・オフするスイツチ
とを備え、 前記ゲート入力が断の期間中において、所定期
間前記スイツチをオンとして前記寄生ダイオード
の順方向電圧降下を測定することを特徴とする温
度測定装置。
[Claims for Utility Model Registration] An amplifier circuit using a field effect transistor (FET), which supplies a reverse bias voltage between a parasitic diode connected between the source and drain of the FET and the source and drain of the FET. It is characterized by comprising a constant voltage source and a switch that turns on and off the reverse bias voltage, and measures the forward voltage drop of the parasitic diode by turning on the switch for a predetermined period while the gate input is off. temperature measuring device.
JP4788190U 1990-05-07 1990-05-07 Pending JPH047337U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4788190U JPH047337U (en) 1990-05-07 1990-05-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4788190U JPH047337U (en) 1990-05-07 1990-05-07

Publications (1)

Publication Number Publication Date
JPH047337U true JPH047337U (en) 1992-01-23

Family

ID=31564203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4788190U Pending JPH047337U (en) 1990-05-07 1990-05-07

Country Status (1)

Country Link
JP (1) JPH047337U (en)

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