JPH0447527A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPH0447527A JPH0447527A JP15793390A JP15793390A JPH0447527A JP H0447527 A JPH0447527 A JP H0447527A JP 15793390 A JP15793390 A JP 15793390A JP 15793390 A JP15793390 A JP 15793390A JP H0447527 A JPH0447527 A JP H0447527A
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- JP
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- Prior art keywords
- thin film
- magnetic recording
- recording medium
- temperature
- alloy
- Prior art date
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- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は非磁性基材にCr、Cjo合金薄膜を順次積
層して形成する磁気記録媒体の製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a magnetic recording medium in which Cr and Cjo alloy thin films are sequentially laminated on a non-magnetic base material.
従来、磁気記録媒体としては、NLP等の下地硬化層を
設けたA/−MP基板あるいは直接A/ −Mp基板上
に酸化鉄などの針状粒子あるいは強磁性合金の超微粉末
を樹脂バインダー中に分散させたものを磁気記録層とし
て形成せしめたものが玉流であった。しかし、近年の情
報の高密度記録化の要求から、湿式メツキ、真空蒸着、
スパッタリング、イオンブレーティング等の薄膜形成法
により形成された強磁性薄膜層を磁気記録層とする磁気
記録媒体が精力的に研究開発されており、なかでも、ス
パッタリング法により作製される磁気記録媒体が高密度
記録化性ならびに量産性に優れるもので、今後の磁気記
録媒体の主151E[々るものと考えられている。Conventionally, magnetic recording media have been produced by depositing acicular particles such as iron oxide or ultrafine powder of ferromagnetic alloy in a resin binder on an A/-MP substrate with a hardened base layer such as NLP or directly on an A/-MP substrate. The magnetic recording layer was formed by dispersing it into a magnetic recording layer. However, due to the recent demand for high-density recording of information, wet plating, vacuum deposition,
Magnetic recording media whose magnetic recording layer is a ferromagnetic thin film layer formed by thin film formation methods such as sputtering and ion blating are being actively researched and developed. It is excellent in high-density recording and mass production, and is considered to be the main magnetic recording medium of the future.
ところで、このスパッタリング法により作製される磁気
記録媒体(以下、メタルスパッタ媒体と称す。)は、一
般[N1−P下地硬化層を設けたA/ −MP基板上に
Cr、C70合金薄膜を順次形成することにより得られ
る。ローディングチャ/バー、 J[2[熱チヤンバ−
、Crカソード。By the way, magnetic recording media (hereinafter referred to as metal sputtering media) produced by this sputtering method are generally manufactured by sequentially forming Cr and C70 alloy thin films on an A/-MP substrate with a hardened N1-P base layer. It can be obtained by Loading chamber/bar, J[2[thermal chamber]
, Cr cathode.
CO合金カンード及び保護膜カソードを備えたスパッタ
チャンバー並ひにアンa−デイ/グチヤンバーから構成
されるインライン型スパッタリング装置により製造され
るが、Cr薄膜層。The Cr thin film layer is produced by an in-line sputtering apparatus consisting of a sputter chamber with a CO alloy cand and a protective film cathode as well as an A-day/guchi chamber.
Co合金薄膜層及び保護膜層を形成する方法とじては、
基板が各ターゲットの前を通過すら通過型タイプ、基板
がターゲットの前に静止する静止対向型タイプがあるが
、いずれのタイプにおいても、メタルスパッタ媒体を製
造する際の手順は同じである。The method for forming the Co alloy thin film layer and the protective film layer is as follows:
There are two types: a passing type, in which the substrate passes in front of each target, and a stationary facing type, in which the substrate remains stationary in front of each target. In either type, the procedure for producing a metal sputtering medium is the same.
第8図は従来の通過型タイプのスパッタリング装置の一
例の概要を示す構成図である。4板はローディングチャ
ンバーIl+で真g!に排気された後、基板加熱チャン
バー121に搬送され所定の温度まで加熱される。次に
スパッタチャンバー3;に搬送され、Cr薄膜層、 C
o合金薄膜層、保護膜層が順次形成され、最後にアンロ
ーディングチャンバー(4)に搬送され、大気に戻され
る。FIG. 8 is a block diagram schematically showing an example of a conventional pass-through type sputtering apparatus. The 4th board is loading chamber Il+ and is true g! After being evacuated, the substrate is transported to a substrate heating chamber 121 and heated to a predetermined temperature. Next, it is transported to a sputtering chamber 3; where a Cr thin film layer, C
The o-alloy thin film layer and the protective film layer are sequentially formed, and finally the material is transported to the unloading chamber (4) and returned to the atmosphere.
なお1図中、+51はヒータ、(6)はCrターゲット
。In Figure 1, +51 is the heater and (6) is the Cr target.
17)はCO合合金ターフッ、f8)i保護膜材ターゲ
ット、+911d仕切パルプである。17) is CO alloy turf, f8) i protective film material target, +911d partition pulp.
ところで、このメタルスパッタ媒体の磁気特性及び電磁
変換特性に、 Cr 薄膜層、 Co合金薄膜層形成
時の条件(基板温度、スパッタガス圧等)に強く依存し
ており、基板温度の影響を見ても9例えは、昭和68年
電子通信学会研究会責料MR88−2において報告され
ているように、基板温度を高めることKより磁気特性(
特に保磁力)は向上し、高密度記録時の再生信号は大き
くなるものの、媒体ノイズも増加するため、 s /
N比信号強度と雑音との比)で見る限りにおいては0M
i気特性の同上から期待されるほどの改善が見られない
という問題点がある。By the way, the magnetic properties and electromagnetic conversion properties of this metal sputtering medium strongly depend on the conditions (substrate temperature, sputtering gas pressure, etc.) when forming the Cr thin film layer and the Co alloy thin film layer, and it is important to consider the influence of the substrate temperature. As reported in 1988 IEICE Study Group Report MR88-2, increasing the substrate temperature improves the magnetic properties (
In particular, the coercive force) is improved and the reproduced signal becomes larger during high-density recording, but media noise also increases, so s/
As far as the N ratio (signal strength to noise ratio) is concerned, it is 0M.
There is a problem in that the improvement expected from the same characteristics as above is not observed.
この媒体ノイズFi磁気記録層である00合金薄膜の結
晶粒径と密接な関係があり、まfcco合金薄膜結晶粒
径は下地Cr層の結晶粒径と密接な関係にあることが知
られている。つ1す、O。It is known that this media noise has a close relationship with the crystal grain size of the 00 alloy thin film that is the magnetic recording layer, and that the crystal grain size of the FCCO alloy thin film has a close relationship with the crystal grain size of the underlying Cr layer. . Tsu1su, O.
合金薄膜は01層上にエビクキシャル成長?するため、
Co合金薄膜の結晶粒径?制御するためには、Cr層
の結晶粒径をIII御してやる必要がある。前述した基
板温it上げると媒体ノイズが増加するのはcrの結晶
粒径が増大するため、その結果、co合金薄膜屡の結晶
粒径が増大するためによるものと考えられる。Does the alloy thin film grow evixically on the 01 layer? In order to
Grain size of Co alloy thin film? In order to control this, it is necessary to control the crystal grain size of the Cr layer. The reason why the medium noise increases when the substrate temperature is raised is considered to be because the crystal grain size of Cr increases, and as a result, the crystal grain size of the co alloy thin film also increases.
以上のように、従来のスパッタリング法による磁気記録
媒体の製造方法においては、5a気特性を同上させるた
めKM気記録層形成の際に基材温度を高めてやる必要が
あった。ところが。As described above, in the conventional method of manufacturing a magnetic recording medium using the sputtering method, it is necessary to raise the substrate temperature when forming the KM recording layer in order to improve the 5a characteristics. However.
同時に媒体ノイズをも増大させるという!4!題があっ
た。At the same time, it also increases media noise! 4! There was a problem.
この発明に上記のような課題を解消するためになされた
もので、a気持性を向上させ、高密度記録時の再生出力
を向上できるとともに、媒体ノイズを低減させ、8/N
比を向上できる磁気記録媒体の製造方法を提供すること
を目的とする。This invention was made to solve the above-mentioned problems, and it is possible to improve the feel, improve the reproduction output during high-density recording, reduce media noise, and improve the 8/N
An object of the present invention is to provide a method for manufacturing a magnetic recording medium that can improve the ratio.
この発明の磁気記録媒体の製造方法は、非磁性基材にC
r薄膜、00合金薄膜を順に積層して磁気記録媒体を形
成するもので、上記Cr薄膜を二層構造とし、上記基材
温度?室温風上150℃以下とし@ll7)Cr薄膜を
形成した後、上記基材温1ft150℃以上s o O
’C以下[yrJMして第2のCr薄膜および00合金
薄膜を順に形成するようにしたものである。The method for manufacturing a magnetic recording medium of the present invention includes applying C to a non-magnetic base material.
A magnetic recording medium is formed by sequentially laminating an r thin film and a 00 alloy thin film, and the Cr thin film has a two-layer structure, and the base material temperature is ? After forming the Cr thin film, the temperature of the base material is 1ft150℃ or higher.
The second Cr thin film and the 00 alloy thin film are formed in this order by applying the following process.
この発明における磁気記録媒体の製造方法は第1のCr
薄膜を低温で成膜することによりCr薄膜の結晶粒径を
小さくシ、その彼処2のcr薄膜および00合金薄膜を
基材温度を高くして成膜しているので、第2のCr薄膜
の結晶粒径をN1−P下地層の上に直接形成したものに
比べ小さくでき、その上に形成されるco合金R膜の結
晶粒径を小さくでき、かつ磁気特性を向上できる。従っ
て%磁気記録媒体の高密度記録時の再生出力を同上でき
、媒体ノイズを低くできる。The method for manufacturing a magnetic recording medium according to the present invention includes a first Cr
By forming the thin film at a low temperature, the crystal grain size of the Cr thin film is reduced, and the second Cr thin film and 00 alloy thin film are formed at a higher substrate temperature. The crystal grain size can be made smaller than that formed directly on the N1-P underlayer, and the crystal grain size of the co alloy R film formed thereon can be made smaller, and the magnetic properties can be improved. Therefore, the reproduction output during high-density recording of the magnetic recording medium can be increased to the same level as above, and the medium noise can be lowered.
以下、この発明の一実施例の磁気記録媒体製造方法を図
について説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a magnetic recording medium according to an embodiment of the present invention will be described below with reference to the drawings.
第1図はこの発明の一夷IM列に係るインライン型スパ
ッタ装置の概要を示す構成図である。FIG. 1 is a block diagram showing an outline of an in-line sputtering apparatus according to an IM array of the present invention.
図中、+lIr1ローディングチャンバー、1z1は基
杆加熱チャンバー ・3)はスパッタチャンバー14は
アンローディングチャンバー、+51及び+101 n
a板加熱ビータ−1(6)およびυυはCrターゲッ
ト(7)は00合金ターゲツト、(8)は保護膜材ター
ゲット、191i仕切りパルプである。In the figure, +lIr1 loading chamber, 1z1 is base rod heating chamber, 3) sputter chamber 14 is unloading chamber, +51 and +101 n
A-plate heating beater 1 (6) and υυ are Cr targets (7), 00 alloy targets, (8) are protective film material targets, and 191i partition pulp.
基材をローディングチャンバー(11で真空に磁気した
後、基板加熱チャンバーIll K搬送して9定の温度
(室温〜150℃)まで加熱する。υにスパッタチャン
バー(3)に搬送し第1のCr薄膜を成膜する。その後
さらに基板を加熱してB定の温度(150〜soO℃)
まで加熱して第2のCr薄膜を成膜し、続いて00合金
薄膜、保護膜を成膜する。その後、アンローブイングチ
倉ンハ141に搬送し大気に戻す。After the substrate is magnetized to a vacuum in a loading chamber (11), it is transferred to a substrate heating chamber (Ill K) and heated to a constant temperature (room temperature to 150°C). A thin film is formed.Then, the substrate is further heated to a constant B temperature (150 to soO℃).
A second Cr thin film is formed by heating to a temperature of 100.degree. C., followed by a 00 alloy thin film and a protective film. Thereafter, it is transported to the unrobing warehouse 141 and returned to the atmosphere.
この発明に係る第1のCar@膜の成膜温度は基材@度
を高くすると成膜されるCr薄膜の結晶粒径が大きくな
り、@1のCr薄膜上にエピタキシャル成長する第2C
r薄膜の結晶粒径も大きくなり、第2のCr薄膜上にエ
ピタキシャル成長するCo合金薄膜の結晶粒径も大きく
なり、媒体ノイズが増大するので、150℃以下が過当
である。When the film formation temperature of the first Car@ film according to the present invention is increased, the crystal grain size of the Cr thin film to be formed becomes larger, and the second Car film is epitaxially grown on the Cr thin film of @1.
The crystal grain size of the r thin film also increases, and the crystal grain size of the Co alloy thin film epitaxially grown on the second Cr thin film also increases, which increases media noise, so a temperature of 150° C. or less is unreasonable.
また、第2のCr薄膜およびCo合金薄膜の成膜温度は
基材温度が低くなると磁気特性(特に保磁力)の向上が
顕著に現れず、高くすぎると基材を損ねるので150℃
〜800℃の範囲が適当であり、200℃〜j!50℃
の範囲がより望ましいO
次に具体例を挙げて説明する。In addition, the film formation temperature for the second Cr thin film and Co alloy thin film is 150°C, since the improvement in magnetic properties (especially coercive force) will not be noticeable if the base material temperature is low, and if it is too high, the base material will be damaged.
A range of ~800℃ is suitable, and a range of 200℃~j! 50℃
A more desirable range is O.Next, specific examples will be given and explained.
実施列l。Implementation column l.
非磁性基材としてN1−P下地硬化層が設けられたA/
−My 基板にテクスチャー加工ft施したもの倉
用い、co合金としてco625 MLs。A/ in which a N1-P base hardening layer was provided as a non-magnetic base material
-My Co625 MLs were used as a co alloy with a textured substrate.
01−q、5at Toの組成のCo Ni Crを保
護膜材としてにカーボンを用いた。第1図に示すスパッ
タ。Carbon was used as a protective film material for Co Ni Cr having a composition of 01-q and 5at To. Sputtering shown in FIG.
装置を用い、筐ず、第1のCr薄膜を基材温度を室温と
して100OA 應し、次いで基材温度2soo′cま
で上げて、第2のCr薄膜を1000A成膜し、Co
Ni Cr薄膜を50 OA 成膜し、さらにカーボ
ン膜を400A成暎して磁気記録媒体を形成した。なお
、この時のスパッタガス圧は全て10 m Torrと
した。Using a device, the first Cr thin film was heated to 100 OA with the substrate temperature set to room temperature, and then the substrate temperature was raised to 2 soo'c, and the second Cr thin film was deposited at 1000 Å.
A NiCr thin film was formed at a thickness of 50 OA, and a carbon film was further formed at a thickness of 400 Å to form a magnetic recording medium. Note that the sputtering gas pressure at this time was all set to 10 m Torr.
ス厖的2゜
第1のCr博膜形成時の基材温度’1lLlO℃とし、
他は全て実施列1と同一条件で成膜を行い磁気記録媒体
を形成した。The temperature of the base material at the time of forming the first Cr film is 110°C,
All other film formation was performed under the same conditions as in Example 1 to form a magnetic recording medium.
比較例 累2図に示す従来装置を用い、Cr薄膜、C。Comparative example Using the conventional apparatus shown in Fig. 2, Cr thin film, C.
Ni Cr薄膜とも基材温度200℃で成膜して磁気記
録媒体を形成した。Both NiCr thin films were formed at a substrate temperature of 200° C. to form magnetic recording media.
他の条件は実施列lと同じに行った、。The other conditions were the same as in column 1.
ダ施的1.2及び比較例にて得られたメタルスパッタ媒
体の’[磁変換特性及び磁気特性を測定した0篭磁変換
特性測定t/Cr1薄膜出気ヘツドを用い相対速度ig
、1m/五記録周波数8MH5,ノイズ帯域20MHz
にて行った。また磁気特性測定には試料振動梨磁力計(
78M)ft用いた。The magnetic conversion characteristics and magnetic characteristics of the metal sputtering media obtained in Example 1.2 and Comparative Example were measured using a relative velocity ig using a t/Cr1 thin film outlet head.
, 1m/5 recording frequency 8MH5, noise band 20MHz
I went there. In addition, a sample vibrating pear magnetometer (
78M)ft was used.
篭出変羨特性及び磁気特性測定給果を表に示す。The results of measuring the magnetic characteristics and magnetic properties are shown in the table.
表
実*列l及び2とも保磁力は比較例と比べやや低い値を
示してh・す、再生出力もやや低いICE ft示して
いる。一方、ノイズに関しては実見gAJ l及び2は
比較例に比べ低い#Lを示して3す、S/Hにおいて2
〜8dB の改善が見られた。Table *Columns 1 and 2 both show a slightly lower coercive force than the comparative example, and the reproduction output also shows a slightly lower ICE ft. On the other hand, regarding noise, actual gAJ l and 2 show lower #L than the comparative example, and 2 in S/H.
An improvement of ~8 dB was observed.
この発明においては、Co合金薄膜の結晶粒径を1iI
IJ御するCr薄膜を二層とし、第1のCr薄膜を低温
で成膜し、@晶粒径を小さクシ、第1のCr薄膜上にエ
ピタキシャル成長する第2のCr薄膜を高温でFiy、
農してもその結晶粒径を小さな状態で形成し、第2のC
r薄膜上にエピタキシャル成長するCo合金薄膜の結晶
粒径を小さい状態で形成できる。叩ち%Cr薄膜そして
00合金薄膜の結晶粒径を小さくしたまま、 C。In this invention, the crystal grain size of the Co alloy thin film is set to 1iI
The IJ-controlled Cr thin film is made into two layers, the first Cr thin film is formed at a low temperature, the grain size is made small, the second Cr thin film is grown epitaxially on the first Cr thin film at a high temperature,
Even if it is grown, the crystal grain size is formed in a small state, and the second C
The Co alloy thin film epitaxially grown on the r thin film can be formed with a small crystal grain size. C. while keeping the grain size of the beaten %Cr thin film and 00 alloy thin film small.
合金薄膜の磁気特性を向上させることができるので、高
密度記録時の再生出力を高く維持するとともにノイズを
低減することができ% 8/Nを向上できる優れた磁気
記録媒体が得られる。Since the magnetic properties of the alloy thin film can be improved, an excellent magnetic recording medium that can maintain high reproduction output during high-density recording, reduce noise, and improve %8/N can be obtained.
なお、上記実施例においては非磁性基材としてN1−P
下地硬化層を設はテクスチャー加工を施こしたA/−M
y基板、00合金薄膜として(!062.5Ni30
C!r?、5 at %のCo Ni (!r薄!sを
形成した場合について説明したが、これに限らず他の基
板また他のCo合金薄膜に適用しても同様の効果を奏す
る。また基板加熱温度、スパッタカス圧等スパッタ条件
も上記実施例に限定されるものではない。In addition, in the above example, N1-P was used as the nonmagnetic base material.
A/-M with textured base hardening layer
y substrate, as 00 alloy thin film (!062.5Ni30
C! r? , 5 at % CoNi (!rthin!s) has been described, but the same effect can be achieved by applying it to other substrates or other Co alloy thin films. , sputtering conditions such as sputtering residue pressure are not limited to the above embodiments.
以上のように、この発明によれば非磁性基材にCr薄膜
、00合金薄膜を順に積層して磁気記録媒体を形成する
ものにおいて、上記Cr薄膜を二層とし第10r薄膜を
上記基材温度を室温以上150℃以下にして成膜した後
、上記基材温4゜
度f7r150℃以上800℃以下に加熱して第2 C
r薄膜およびCo合金薄膜を成膜するようにしたので、
磁気特性をそこなわず媒体ノイズを低減でき、BlN比
が同上した磁気記録媒体が得られる。As described above, according to the present invention, in a magnetic recording medium formed by sequentially laminating a Cr thin film and a 00 alloy thin film on a non-magnetic base material, the Cr thin film is two layers and the 10rth thin film is formed at the base material temperature. After forming the film at room temperature or higher and 150°C or lower, the substrate temperature is heated to 4°C or higher and 800°C or lower to form a second C.
Since the r thin film and the Co alloy thin film were formed,
A magnetic recording medium can be obtained in which medium noise can be reduced without impairing magnetic properties and the BlN ratio is the same as above.
第1図はこの発明の一実施例に係わるインライン型スパ
ッタ装置を示す構成図、第2図に従来例に係わるインラ
イン型スパッタ装置を示す構成図である。
図において、(31はスパッタチャンバー、(61およ
びσυはCrメタ−ット、(7)はCO合金ターゲット
、(101は基板加熱ヒータである。
なお、各図中同一符号は同−又は相当部分を示す。FIG. 1 is a block diagram showing an in-line sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram showing an in-line sputtering apparatus according to a conventional example. In the figure, (31 is a sputtering chamber, (61 and συ are Cr metal, (7) is a CO alloy target, and (101 is a substrate heater.) In each figure, the same reference numerals indicate the same or corresponding parts. shows.
Claims (1)
磁気記録媒体を形成するものにおいて、上記Cr薄膜を
二層構造とし、上記基材温度を室温以上150℃以下と
し第1のCr薄膜を形成した後、上記基材温度を150
℃以上800℃以下に加熱して第2のCr薄膜およびC
o合金薄膜を順に形成するようにしたことを特徴とする
磁気記録媒体の製造方法。In a magnetic recording medium formed by sequentially laminating a Cr thin film and a Co alloy thin film on a non-magnetic base material, the Cr thin film has a two-layer structure, and the base material temperature is above room temperature and below 150°C, and the first Cr After forming the thin film, the temperature of the substrate was increased to 150°C.
The second Cr thin film and C
A method for manufacturing a magnetic recording medium, characterized in that o-alloy thin films are sequentially formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15793390A JPH0447527A (en) | 1990-06-14 | 1990-06-14 | Production of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15793390A JPH0447527A (en) | 1990-06-14 | 1990-06-14 | Production of magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0447527A true JPH0447527A (en) | 1992-02-17 |
Family
ID=15660653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15793390A Pending JPH0447527A (en) | 1990-06-14 | 1990-06-14 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0447527A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456978A (en) * | 1993-08-03 | 1995-10-10 | Hmt Technology Corporation | Thin-film recording medium with thin metal sublayer |
-
1990
- 1990-06-14 JP JP15793390A patent/JPH0447527A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456978A (en) * | 1993-08-03 | 1995-10-10 | Hmt Technology Corporation | Thin-film recording medium with thin metal sublayer |
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