JPH044752U - - Google Patents

Info

Publication number
JPH044752U
JPH044752U JP4614690U JP4614690U JPH044752U JP H044752 U JPH044752 U JP H044752U JP 4614690 U JP4614690 U JP 4614690U JP 4614690 U JP4614690 U JP 4614690U JP H044752 U JPH044752 U JP H044752U
Authority
JP
Japan
Prior art keywords
device sections
sections
markers
defective
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4614690U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4614690U priority Critical patent/JPH044752U/ja
Publication of JPH044752U publication Critical patent/JPH044752U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例1を示す平面図、第2
図は本考案の実施例2を示す平面図、第3図は従
来の素子の平面図である。 1,11……化合物FET素子のゲート電極、
1,12……化合物FET素子のドレイン電極、
3,13……化合物FET素子のソース電極、4
,14……ゲート電極1のボンデイングパツド部
、5,15……ドレイン電極2のボンデイングパ
ツド部、6,16……ソース電極3のボンデイン
グパツド部、7,8……不良マーカ専用パターン
、9……打刻傷。
Figure 1 is a plan view showing the first embodiment of the present invention;
The figure is a plan view showing Embodiment 2 of the present invention, and FIG. 3 is a plan view of a conventional element. 1, 11...gate electrode of compound FET element,
1, 12...Drain electrode of compound FET element,
3, 13...Source electrode of compound FET element, 4
, 14... Bonding pad portion of gate electrode 1, 5, 15... Bonding pad portion of drain electrode 2, 6, 16... Bonding pad portion of source electrode 3, 7, 8... Defect marker pattern , 9... Puncture scratches.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 多数の素子区画形成済みウエーハの素子区画内
に、不良マーカの専用パターンを形成したことを
特徴とする化合物半導体素子。
A compound semiconductor device characterized in that a dedicated pattern of defective markers is formed within the device sections of a wafer on which a large number of device sections have been formed.
JP4614690U 1990-04-26 1990-04-26 Pending JPH044752U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4614690U JPH044752U (en) 1990-04-26 1990-04-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4614690U JPH044752U (en) 1990-04-26 1990-04-26

Publications (1)

Publication Number Publication Date
JPH044752U true JPH044752U (en) 1992-01-16

Family

ID=31560968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4614690U Pending JPH044752U (en) 1990-04-26 1990-04-26

Country Status (1)

Country Link
JP (1) JPH044752U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111939U (en) * 1977-02-16 1978-09-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111939U (en) * 1977-02-16 1978-09-06

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