JPH0448073A - Sputtering device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] Industrial Field of Application The present invention relates to a sputtering apparatus having the feature of being able to form a film at a high speed at a low temperature.The conventional technology magnetron sputtering method is capable of forming a film at a high speed at a low temperature. Figure 4 shows a conventional sputtering apparatus using the magnetron sputtering method, which is a film-forming method. A substrate transfer device 24 having a plurality of rollers 25 may be provided inside.
Although a substrate tray 5 having a substrate holder 6 for fixing the substrate 4 is arranged on the rollers 25 of the substrate transfer device 24, the substrate holder 6 and the substrate tray 5 are grounded to maintain a stable discharge state. Even if the vacuum chamber 1 is configured as shown below, the cathode section is provided at the top of the vacuum chamber 1.The vacuum chamber 1 and the cathode holder 7 are electrically insulated by an insulator 8, and a predetermined cathode section is provided in the cathode holder 7. Even if a permanent magnet 9 with a polarity arrangement of Cooling system 1 for cooling sputtering target 10 etc.
2 is also installed, the power necessary for sputtering is supplied from the power supply system 13, and even though the vacuum chamber L is equipped with a shield ring 14, the vacuum chamber L is also equipped with a gate valve 15 to isolate it from other chambers. However, film formation with this apparatus is performed as follows: A sputtering gas whose main component is an inert gas such as argon is introduced from the gas introduction system 3 into the vacuum chamber 1 at a predetermined flow rate. Even if the degree of vacuum of The ions collide with the sputtering target 10, and the sputtered particles are scattered from the sputtering target 10 to form a thin film on the substrate 4. However, the problem to be solved by the invention is as follows. Problems faced (1) When a film is formed on an insulating substrate 4, electrons generated by discharge are irradiated onto the substrate 4 and accumulated.A These electrons also flow to the grounded substrate holder 6. The situation is shown in Figure 5. In the substrate holder 6, there is a force (electrons 17 accumulated here are concentrated and flow into the thin film surface (section A in FIG. 5) on the thin film surface near the substrate holder 6), which is generated by cutting etc. during manufacturing. A very large current flows per unit area, resulting in heat generation and deterioration of the thin film quality.

Problem (2) Furthermore, if the substrate tray 5 and substrate holder 6 are repeatedly used for sputtering, a thick film will be deposited on them.At this time, if the phenomenon of problem (1) above occurs, electrons will The protrusion 16i of the substrate holder 6 flowing into it; L;
As the temperature rises locally, the film deposited on the protrusion 16 of the substrate holder 6 peels off due to the difference in thermal expansion coefficient between the protrusion 16 and the film deposited on its surface, and becomes dust. When this dust adheres to the substrate on which the film is being formed, it causes defects, and due to problems (1) and (2) above, the manufacturing yield of thin films decreases, and the R film In view of the above-mentioned problems, the present invention has been developed to reduce the amount of dust that can cause film quality deterioration during film formation and to cause defects. Means for Solving the Problems The present invention provides a sputtering apparatus that is equipped with an electrode around a substrate holder that is insulated from the substrate tray and the substrate holder.

Function The present invention has the above configuration, so that when a grounded or positive voltage is applied to the electrode, the electrons accumulated on the substrate etc. due to discharge do not concentrate and flow into the substrate holder, and the grounded or positive voltage is applied. The current density on the substrate does not increase because it flows into the applied electrode.

In addition, when a negative voltage is applied to the substrate holder and the electrode, the thin film deposited on the substrate holder and the electrode can be removed because the substrate holder and one electrode are sputtered. Embodiments of the invention will be explained based on FIGS. 1 to 3. FIG. 1 shows the overall configuration of the sputtering apparatus.
FIGS. 2 and 3 show the structure near the substrate.

FIG. 1 shows the configuration of an embodiment of a sputtering apparatus of the present invention. Components that are the same as those in the conventional example are given the same reference numerals as in FIG. The configuration is shown in Figure 2. 1 @ In FIG. 2, the substrate tray 18 is provided with a substrate holder 20 for fixing the substrate 4, and the substrate holder 20 and the substrate tray 18 are insulated by an insulator 19.
The annular electrode 21 is installed around the substrate holder 20. The annular electrode 21 is insulated from the substrate tray 18 and the substrate holder 20 by the insulator 19. Next, the operation of the sputtering apparatus of this embodiment will be explained. No voltage is applied to 20, and it is insulated from the surroundings.
The annular electrode 21 is grounded or a positive voltage is applied.Next, a voltage is applied to the sputtering targeter (10) from the power supply system 13 to generate plasma and start sputtering.The substrate holder 20, the substrate 4, and the insulator 19 are Although they are insulated from the surroundings, the irradiated electrons may be accumulated in these members.As shown in FIG. The electrons 17 that flow into the annular electrode 21 to which a voltage of A is applied are concentrated on the protrusion 22 due to the potential difference between the protrusion 22 generated by cutting the annular electrode 21 and the part of the annular electrode 21 without protrusions. In this way, the electrons 17 do not concentrate on the protrusion 26 of the substrate holder 20, but instead flow into the protrusion 22 of the annular electrode 21 located further on the outer periphery of the substrate holder 20. A current that is too large per unit area does not flow through the thin film, and deterioration of the film quality of the thin film can be prevented. In this step, a sputtering gas containing argon-based inert gas as a main component is introduced to a predetermined pressure, and a negative voltage is applied to the substrate holder 20 and the annular electrode 21 using the voltage application device 23 to generate a glow discharge. As a result, the * deposited on the substrate holder 20 and the annular electrode 21
g is reduced by sputtering. Therefore, by performing the above steps during non-film formation, such as at the end of film formation, the film deposited on the substrate holder 20 and the annular electrode 21 can be removed even if the substrate holder 20 is used repeatedly. Since there is no dust, the production yield of thin films cannot be made very high.
A negative voltage is applied to the substrate holder 20 and the annular electrode 21 in the vacuum chamber 1. The substrate is taken out, and sputtering gas containing argon-based inert gas as the main component is introduced to a predetermined pressure in a dedicated vacuum chamber for removing unnecessary films other than the vacuum chamber 1, and the substrate holder 20 etc. are sputtered. In this example, the force that forms the electrodes around the substrate holder into an annular shape (not limited to this, but the force that forms the electrodes around the substrate holder intermittently) In addition, in this embodiment, the substrate holder 20 only supports the substrate 4 from the side. Sputtering apparatus of the present invention By grounding the electrode or applying a positive voltage, the current density does not become high on the substrate to be processed, so deterioration of the film quality of the thin film can be prevented.Also, by applying a negative voltage to the electrode By doing so, it is possible to remove the film deposited on the substrate holder, electrodes, etc., and reduce defects in the thin film that occur during film formation.Therefore, the present invention can produce a thin film with uniform and good quality at a high yield, and improve the performance of the product. It has a great effect on improvement and cost reduction.a

[Brief explanation of the drawing]

Fig. 1 is a schematic diagram of a sputtering apparatus according to an embodiment of the present invention; Fig. 2 is a schematic perspective view showing the substrate tray, etc. of the same apparatus; and Fig. 3 is a schematic diagram showing how electrons flow into the annular electrode in the embodiment. FIG. 4 is a schematic perspective view of a conventional sputtering apparatus. FIG. 5 is a schematic perspective view of a main part showing how electrons flow into the substrate holder in the conventional example. Vacuum chamber 210. Vacuum exhaust double 3° gas introduction 401. Substrate, 5° Ray 606. Substrate holder 7° holder 818. Insulator 8, 9°lOl, sputtering target, backing plate, 12. ,, Cooling Fan, Power Supply 14. ,,
Shield link-1 gate valve, 16. ,,protrusion i!
1? . 18. Substrate tray 19. ,, Insulated board holder 21. ,, annular electrode, protruding eye 230. Name of agent for voltage application device: Patent attorney Shigetaka Awano Haka 1 salt substrate tocathode, permanent magnet 11. 13°50. . Electron, 20゜22゜1st mouth t14n water grass / 3N filter nail / 2nd figure 23 electric itu*ast figure figure figure +2

Claims (5)

[Claims] (1) Holding a vacuum chamber, a vacuum exhaust system provided in the vacuum chamber, a gas introduction system, a cathode section, a power supply system that supplies voltage to the cathode section, a substrate tray, and a substrate placed on the substrate tray. a substrate holder, the cathode section includes a sputtering target, a backing plate attached to the sputtering target,
A sputtering apparatus comprising a magnetic field generating means disposed near the sputtering target, and comprising an electrode provided around the substrate holder and insulated from the substrate tray and the substrate holder. (2) The sputtering apparatus according to claim 1, wherein the electrode is annular. (3) The sputtering apparatus according to claim 1 or 2, wherein the electrode is grounded or a positive voltage is applied to the electrode. (4) The sputtering apparatus according to claim 1 or 2, wherein a negative voltage is applied to the electrode and the substrate holder. (5) Claim 1 characterized in that the vacuum chamber includes a gate valve provided in the vacuum chamber, and a substrate transfer means arranged inside the vacuum chamber, and a substrate tray, a substrate holder, and an electrode are provided on the substrate transfer means. 5. The sputtering apparatus according to any one of 4 to 4.