JPH0448437A - Production of magnetic recording medium - Google Patents

Production of magnetic recording medium

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Publication number
JPH0448437A
JPH0448437A JP15285890A JP15285890A JPH0448437A JP H0448437 A JPH0448437 A JP H0448437A JP 15285890 A JP15285890 A JP 15285890A JP 15285890 A JP15285890 A JP 15285890A JP H0448437 A JPH0448437 A JP H0448437A
Authority
JP
Japan
Prior art keywords
film
substrate
medium
gas
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15285890A
Other languages
Japanese (ja)
Inventor
Hideki Tamai
秀樹 玉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15285890A priority Critical patent/JPH0448437A/en
Publication of JPH0448437A publication Critical patent/JPH0448437A/en
Pending legal-status Critical Current

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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To improve the coercive force and anisotropy in the circumferential direction of a disk and to improve reproduction output and recording density, etc., by using a mixture gas of Ar and hydrogen in the process of inverse sputtering of a substrate and Cr film. CONSTITUTION:In the production process of thin film medium comprising a Cr base film and CoCrTa or CoNiCr magnetic film on a substrate by sputtering, inverse sputtering of the substrate and Cr base film is carried out in an environment of a mixture gas comprising Ar and hydrogen. The hydrogen gas to be added can chemically remove oxides which exist on the substrate and on the surface of the Cr film and cause deterioration of magnetic characteristics. Thereby, with addition of hydrogen gas, the obtd. medium has higher coercive force and anisotropy along the circumferential direction of the disk.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は磁気記録媒体の製造方法に関し、ざらに詳しく
は、ハード磁気ディスク用の長手薄膜媒体の製造方法に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing a magnetic recording medium, and more particularly, to a method of manufacturing a longitudinal thin film medium for a hard magnetic disk.

[従来の技術] ハード磁気ディスク用の高記録密度媒体として、塗布媒
体に代わってスパッタ法による薄膜媒体が現在主流とな
ってきている。高記録密度を実現するため、この薄膜媒
体は高出力、高記録密度特性等が要求されている。これ
らの特性を向上させるにはその媒体の磁気特性として、
保磁力、角形比が大きく、ざらにディスクの円周方向へ
の異方性も大きい必要がある。
[Prior Art] As a high recording density medium for hard magnetic disks, thin film media produced by sputtering have now become mainstream instead of coated media. In order to achieve high recording density, this thin film medium is required to have high output and high recording density characteristics. To improve these properties, the magnetic properties of the medium should be
It is necessary to have a large coercive force, a large squareness ratio, and a large anisotropy in the circumferential direction of the disk.

そこで、上記特性を得るため、基板としてディスク円周
方向にテクスチャ溝をつけたNiP/Al基板を用い、
糾Arガスで基板を逆スパッタにより表面をエツチング
後、下地膜としてCr膜を形成し、次にCr1lを再び
逆スパッタにより表面をエツチング後、磁性膜としてC
0NiCr膜またはCoCrTa膜を形成し媒体を作製
する方法が提案されている(電子情報通信学会技術研究
報告、CPM88−91およびCPMB8−92.19
88年〉。
Therefore, in order to obtain the above characteristics, a NiP/Al substrate with textured grooves in the circumferential direction of the disk was used as the substrate.
After etching the surface of the substrate by reverse sputtering with Ar gas, a Cr film is formed as a base film, and then Cr11 is etched on the surface by reverse sputtering again, followed by C as a magnetic film.
A method of manufacturing a medium by forming a 0NiCr film or a CoCrTa film has been proposed (IEICE technical research report, CPM88-91 and CPMB8-92.19
1988>

[発明が解決しようとする課題J 上記の従来のスパッタ法による薄膜媒体作製技術におい
ても、媒体の保磁力、角形比、円周方向への異方性は良
好なレベルにあるが、更に超高記録密度の実現のために
それらを改善する必要がある。
[Problem to be Solved by the Invention J Even in the conventional thin film medium manufacturing technology using the sputtering method described above, the coercive force, squareness ratio, and anisotropy in the circumferential direction of the medium are at a good level. It is necessary to improve them in order to realize recording density.

本発明の目的は、更に超高記録密度実現のため、媒体の
保磁力、ディスク円周方向への異方性を改善した磁気記
録媒体の製造方法を提供することにある。
Another object of the present invention is to provide a method for manufacturing a magnetic recording medium that improves the coercive force of the medium and the anisotropy in the circumferential direction of the disk in order to realize ultra-high recording density.

[課題を解決するための手段] 本発明は、基板上に、スパッタ法によりCrの下地膜と
CoCrTaまたはCON i Qrの磁性膜からなる
薄膜媒体を作製する磁気記録媒体の製造方法において、
Arガスと水素ガスからなる混合ガスを雰囲気として基
板を逆スパッタにより表面をエツチングした後、Orよ
りなる下地膜を形成する工程と、Arガスと水素ガスか
らなる混合ガスを雰囲気として前記Cr膜を逆スパッタ
により表面をエツチングした後、CoCrTaまたはC
oNiCrよりなる磁性膜を形成する工程とを備えてな
ることを特徴とする磁気記録媒体の製造方法である。
[Means for Solving the Problems] The present invention provides a method for manufacturing a magnetic recording medium in which a thin film medium consisting of a Cr base film and a CoCrTa or CON i Qr magnetic film is manufactured on a substrate by sputtering.
After etching the surface of the substrate by reverse sputtering in an atmosphere of a mixed gas of Ar gas and hydrogen gas, a step of forming a base film of Or, and etching the Cr film in an atmosphere of a mixed gas of Ar gas and hydrogen gas. After etching the surface by reverse sputtering, CoCrTa or C
This method of manufacturing a magnetic recording medium is characterized by comprising a step of forming a magnetic film made of oNiCr.

[作用] 本発明では、基板上にスパッタ法によりCrの下地膜と
CoCrTaまたはCON r crの磁性膜からなる
薄膜媒体を作製する際に、基板およびOr下地膜の逆ス
パッタ時にArガスと水素ガスからなる混合ガスを雰囲
気として行う。ここで添加する水素ガスは、磁気特性劣
化の原因となっている基板およびCr膜表面の酸化物を
化学反応を利用して取り除くことができる。その結果、
添加水素ガスの影響により、保磁力およびディスク円周
方向への異方性をさらに高めた媒体の作製か可能である
[Function] In the present invention, when producing a thin film medium consisting of a Cr base film and a CoCrTa or CON r cr magnetic film on a substrate by sputtering, Ar gas and hydrogen gas are used during reverse sputtering of the substrate and Or base film. The atmosphere is a mixed gas consisting of: The hydrogen gas added here can remove oxides on the surfaces of the substrate and Cr film, which cause deterioration of magnetic properties, by utilizing a chemical reaction. the result,
Due to the influence of the added hydrogen gas, it is possible to create a medium with even higher coercive force and anisotropy in the circumferential direction of the disk.

[実施例] 以下に、本発明の実施例について説明する。[Example] Examples of the present invention will be described below.

実施例1 本実施例では、磁性膜がCoCrTa膜の場合について
説明する。本実施例に用いたスパッタ装置はRFマグネ
トロン方式のものである。ターゲットは下地膜用として
3NのCrターゲット、磁性膜用としてCoCrTa(
12at%Cr、2at%Ta>合金ターゲットをそれ
ぞれ用いた。また、基板はテクスチャ溝つき(表面粗ざ
Rmax=400人> N i P/Affi基板を用
いた。
Example 1 In this example, a case where the magnetic film is a CoCrTa film will be described. The sputtering apparatus used in this example is of the RF magnetron type. The target was a 3N Cr target for the base film, and a CoCrTa (CoCrTa) target for the magnetic film.
12 at% Cr and 2 at% Ta>alloy targets were used, respectively. In addition, a N i P/Affi substrate with textured grooves (surface roughness Rmax = 400 people) was used as the substrate.

まず、本発明の実施例1によるスパッタ条件を第1表に
示す。また、比較のために、従来と同様に基板およびC
r膜の逆スパッタ時にも純Arガスで作製した以外は第
1表と同じ条件で作製した媒体を比較例1とし、これら
2種類について、磁気特性を試料振動型磁化測定器(V
SM)によって測定した。その結果を第2表に示す。こ
れから、本実施例の媒体は、従来より磁気特性で、特に
保磁力およびディスクの円周方向への異方性が改善され
ていることがわかった。
First, Table 1 shows sputtering conditions according to Example 1 of the present invention. In addition, for comparison, the board and C
Comparative Example 1 is a medium manufactured under the same conditions as in Table 1, except that pure Ar gas was used during the reverse sputtering of the R film.
SM). The results are shown in Table 2. From this, it was found that the medium of this example had improved magnetic properties, particularly coercive force and anisotropy in the circumferential direction of the disk, compared to conventional media.

第1表 (以下余白) 第2表 様に、従来より磁気特性で、とくに保磁力およびディス
クの円周方向への異方性が改善されていることがわかっ
た。
Table 1 (blank below) Table 2 shows that the magnetic properties, particularly the coercive force and the anisotropy in the circumferential direction of the disk, are improved compared to the conventional method.

第3表 実施例2 次に、磁性膜がCON i Cr膜の場合について説明
する。
Table 3 Example 2 Next, a case where the magnetic film is a CON i Cr film will be described.

磁性膜用としTCON i Cr (20at%N10
 at%Cr)合金ターゲットを用いた以外は、下地膜
のターゲットおよび基板について実施例1と同様とした
。また、スパッタ条件も第3表に示したように、C0N
iCr以外は実施例1と同様とした。また、比較のため
に、従来と同様に基板およびCr膜の逆スパッタ時にも
純Arガスで作製した以外は第3表と同じ条件で作製し
た媒体を比較例2とし、これら2種類について、磁気特
性をVSMによって測定した。その結果を第4表に示す
。これから、本実施例の媒体も実施例1と同(以下余白
) 第4表 [発明の効果] 本発明の製造方法により作製した磁気記録媒体は、基板
およびCr膜の逆スパッタ時にArと水素との混合ガス
を用いることにより、従来より磁気特性、特に保磁力お
よびディスクの円周方向への異方性が改善され、従来に
比べて再生出力、記録密度等が更に改善された。
For magnetic film TCON i Cr (20at%N10
The base film target and substrate were the same as in Example 1, except that an alloy target (at%Cr) was used. In addition, as shown in Table 3, the sputtering conditions are C0N
It was the same as Example 1 except for iCr. For comparison, Comparative Example 2 is a medium fabricated under the same conditions as in Table 3, except that pure Ar gas was used during reverse sputtering of the substrate and Cr film as in the past. Properties were measured by VSM. The results are shown in Table 4. From now on, the medium of this example is the same as Example 1 (the following is a blank space) Table 4 [Effects of the invention] The magnetic recording medium manufactured by the manufacturing method of the present invention has Ar and hydrogen during reverse sputtering of the substrate and Cr film. By using the mixed gas, the magnetic properties, especially the coercive force and the anisotropy in the circumferential direction of the disk, were improved compared to the conventional method, and the reproduction output, recording density, etc. were further improved compared to the conventional method.

Claims (1)

【特許請求の範囲】[Claims] (1)基板上に、スパッタ法によりCrの下地膜とCo
CrTaまたはCoNiCrの磁性膜からなる薄膜媒体
を作製する磁気記録媒体の製造方法において、Arガス
と水素ガスからなる混合ガスを雰囲気として基板を逆ス
パッタにより表面をエッチングした後、Crよりなる下
地膜を形成する工程と、Arガスと水素ガスからなる混
合ガスを雰囲気として前記Cr膜を逆スパッタにより表
面をエッチングした後、CoCrTaまたはCoNiC
rよりなる磁性膜を形成する工程とを備えてなることを
特徴とする磁気記録媒体の製造方法。
(1) A Cr base film and a Co base film are formed on the substrate by sputtering.
In a method for manufacturing a magnetic recording medium, in which a thin film medium made of a magnetic film of CrTa or CoNiCr is manufactured, the surface of the substrate is etched by reverse sputtering in an atmosphere of a mixed gas of Ar gas and hydrogen gas, and then a base film made of Cr is etched. After etching the surface of the Cr film by reverse sputtering using a mixed gas of Ar gas and hydrogen gas as an atmosphere, CoCrTa or CoNiC
1. A method of manufacturing a magnetic recording medium, comprising the step of forming a magnetic film made of r.
JP15285890A 1990-06-13 1990-06-13 Production of magnetic recording medium Pending JPH0448437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15285890A JPH0448437A (en) 1990-06-13 1990-06-13 Production of magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15285890A JPH0448437A (en) 1990-06-13 1990-06-13 Production of magnetic recording medium

Publications (1)

Publication Number Publication Date
JPH0448437A true JPH0448437A (en) 1992-02-18

Family

ID=15549663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15285890A Pending JPH0448437A (en) 1990-06-13 1990-06-13 Production of magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH0448437A (en)

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