JPH0449703A - High frequency semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a high frequency semiconductor device with high usable frequency by increasing a cutoff frequency by incorporating an amplifier part, a matching circuit part, and a division fin which divides a device container into plural areas in the device container. CONSTITUTION:A microwave power inputted from an input side lead electrode is supplied to microwave FETs 3a, 3b passing an input side matching circuit. The microwave power amplified at the microwave FETs 3a, 3b passes an output side matching circuit, and is outputted from an output side lead electrode. An internal matching type amplifier is divided into two areas by the division fin 9. Therefore, the size of one area in the device container is reduced to 1/2, which increases the cutoff frequency inversely proportional to the size of the device container. Therefore, it is possible to increase a frequency band area where the internal matching type amplifier can be used.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention particularly relates to the structure of a high-frequency semiconductor device in the x-Kv band and above and the micro-Ll wave band.

((Background technology)) FIG. 4 is a plan view showing the structure of a conventional high-frequency semiconductor device for an internally matched amplifier, and FIG. 5 is a cross-sectional view taken along the line vV in FIG. 4.

In the figure, (1) is a heat sink made of a metal hot water body that has a large heat dissipation effect with Cu, and (2) is a heat sink fl).
The side walls (3a) and (3b) are the microwave FET (41 is the matching circuit board, of which (4a)
is the input side matching circuit board 1, (4b) is the output side matching circuit board, (5a) and (5b) are the matching circuit board (4a),
(4b) 10ζ input side matching circuit and output side matching circuit formed respectively; (6a) one 1' electrode at the input end;
(6b) is the output side lead electrode, (7) is the bonding wire, and (8) is the gear.

Next, I will explain the 11 works. One electrode on the input side (6
a) Microphone with more human horn [1 wave power is input side matching circuit (5ti)
T (3a) and (3b) are supplied. The microwave power amplified by the microwave power E T (3a), (3h) passes through the output side matching circuit (5b) and is output from the -I' electrode (6b) on the output side.

[ILJ problem to be solved and attempted by the invention] Since the conventional high frequency semiconductor device is configured as C5=1?11,
In the frequency range (f), good characteristics cannot be obtained due to the influence of the waveguide mode, so it is used at frequencies below the cutoff frequency. This cutoff frequency is inversely proportional to the size inside the equipment container; the larger the container, the less usable Ii
There was a problem that the single wave number band became low.

The present invention has been made to solve the above-mentioned problems, and aims to obtain a high-frequency semiconductor device with a high usable frequency by increasing the cut-off frequency.

[Means to solve the problem]

The high frequency 1' conductor device according to the present invention has an amplifier section, a matching circuit section, and dividing fins that divide the inside of the device container into a plurality of areas built into a gA-rich container.

[Effect]

In the high frequency semiconductor device according to the present invention, the interior of the device is divided into a plurality of areas by dividing fins. Therefore, the size of each divided area is much smaller than the overall size of the inside of the device container. Therefore, the cutoff frequency, which is determined by the size inside the device container and is inversely proportional to the size, is increased, and the usable frequency band can be increased.

C Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

FIG. 1 is a sectional view showing the structure of an internally matched amplifier according to an embodiment of the present invention, and FIG. 2 is a partially enlarged view of FIG. 1, particularly a perspective view of the divided fins.

In Figures 1 and 2, +11, (21, (
3a), (3b), M), +8) are the same as the conventional ones, and (9) is a split fin installed inside the internal matching type amplifier container.

Internally consistent type increase Ila! i! The inside is divided into two areas by the dividing fin (9). Therefore, the size of one area in the equipment container is 1/2 of the conventional one, and the cutoff frequency is inversely proportional to the size inside the equipment container. Therefore, the usable frequency I!) of the internally matched amplifier can be increased.

In addition, although the internal matching type amplifier was shown in the above embodiment, other high frequency semiconductor devices may be used.

Further, although the above embodiment shows an example in which the area is divided into two areas, it may be divided into a plurality of areas.

Further, in the above embodiment, the dividing points by the dividing fins (9) are two microwaves 1i' ET (3a), (3
h), but F F', T' (3a),
(3b) - and matching circuit board (4) When the dividing point is on the matching circuit (5a) and (5b), use one with a notch in the 41172 inch (9) for 6 and 2. . Figure 3 of Zunawara Yan shows another example of the split fin (9), in which the notch Qω provided in the split fin (9) allows F E T (3a), ( 3
h) or matching circuits (5a) and (5h), the split fins (9) are configured not to come into contact with them.

In addition, if the split fins (9) are made of an elastic metal conductor, they can be easily installed inside a high-frequency semiconductor device by simply pushing the split fins (9) into the container of a conventional device.
) can have the same effect.

At this time, since conventional equipment is used, it is inexpensive.

〔Effect of the invention〕

As described above, according to the present invention, the inside of the device container of the high frequency semiconductor device is divided into a plurality of areas by the dividing fins, so that the usable frequency band can be increased.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of an internal matching type amplifier 6I according to an embodiment of the present invention, and FIG. 2 is a partially enlarged view of FIG.
Particularly, FIG. 3 is a perspective view of a divided fin, FIG. 3 is a perspective view of a divided fin according to another embodiment, R4 is a plan view showing the structure of a conventional internal matching amplifier, and FIG. FIG. In Figure ζ, (3a) and (3b) are microwave F
E.T. (4) is a matching circuit board, and (9) is a split fin. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 4 Figure 2 Figure 5 Figure 3

Claims (1)

[Claims] A high-frequency semiconductor device that includes an amplifier section, a matching circuit section, and dividing fins that divide the inside of the device container into multiple areas.