JPH0449770B2 - - Google Patents
Info
- Publication number
- JPH0449770B2 JPH0449770B2 JP58233882A JP23388283A JPH0449770B2 JP H0449770 B2 JPH0449770 B2 JP H0449770B2 JP 58233882 A JP58233882 A JP 58233882A JP 23388283 A JP23388283 A JP 23388283A JP H0449770 B2 JPH0449770 B2 JP H0449770B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dielectric
- insulator
- opposing surfaces
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はバリスタ機能とコンデンサ機能をあわ
せて有する複合機能素子の製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a multi-functional element having both a varistor function and a capacitor function.
従来例の構成とその問題点
従来、電圧非直線抵抗特性を有するセラミツク
スとして、Sicバリスタや酸化亜鉛を主成分とす
るバリスタがある。このようなバリスタは電流I
−電圧V特性が近似的に
I=(V/C)〓
で表わされるものである。ここで、Cはバリスタ
固有の定数であり、αは電圧非直線指数である。
そして、SicバリスタはSic粒子間の接触バリアを
利用したものであり、αは2〜7程度である。ま
た、酸化亜鉛バリスタは酸化亜鉛ZnOにBi2O3、
CoO、MnO2、Sb2O3等の金属酸化物を微量添加
して、焼成することにより得られる素子であり、
その電圧非直線指数αが50にも及び素子である。
このような素子は高電圧吸収にすぐれた性能を有
しているので、電子機器の安定化や異常電圧(サ
ージ)からの保護の目的で使用されている。しか
しながら、このような従来のバリスタは誘電率が
小さく、また誘電損失角tanδが5〜10%と大きい
ため、もつぱらバリスタの用途にしか利用し得な
い。Conventional configurations and their problems Conventionally, as ceramics having voltage non-linear resistance characteristics, there are SiC varistors and varistors whose main component is zinc oxide. Such a varistor has a current I
-The voltage V characteristic is approximately expressed as I=(V/C)〓. Here, C is a constant specific to the varistor, and α is a voltage nonlinear index.
The Sic varistor utilizes a contact barrier between Sic particles, and α is about 2 to 7. In addition, zinc oxide varistors are made by adding Bi 2 O 3 to zinc oxide ZnO,
It is an element obtained by adding a trace amount of metal oxide such as CoO, MnO 2 , Sb 2 O 3 and firing.
It is an element whose voltage nonlinearity index α is as high as 50.
Since such elements have excellent performance in absorbing high voltages, they are used for the purpose of stabilizing electronic equipment and protecting against abnormal voltages (surges). However, such conventional varistors have a small dielectric constant and a large dielectric loss angle tan δ of 5 to 10%, so they can only be used for varistor applications.
一方、コンデンサとしては大きな誘電率を有す
るチタン酸バリウムBaTiO3やチタン酸ストロン
チウムSrTiO3を主成分とする誘電体磁器が小形
大容量のコンデンサとして広く電子回路に使われ
ている。しかしながら、素子に1mA以上の電流
が流れると破壊されコンデンサとしての機能をな
くするという欠点がある。 On the other hand, as capacitors, dielectric ceramics whose main components are barium titanate BaTiO 3 and strontium titanate SrTiO 3 , which have large dielectric constants, are widely used as small, large-capacity capacitors in electronic circuits. However, there is a drawback that if a current of 1 mA or more flows through the element, it will be destroyed and lose its function as a capacitor.
最近、電子機器は極めて高度な制御を要するよ
うになり、産業用はもとより、マイクロコンピユ
ータの応用により、民生機器も極めて高精度を要
求されるようになつてきた。そして、マイクロコ
ンピユータ等を構成するロジツク回路はパルス信
号により動作するため、必然的にノイズに影響さ
れやすいという欠点がある。このため、電子計算
機、バンキングマシン、交通制御機器等はノイズ
あるいはサージにより、いつたん誤動作、破壊を
おこすと社会的問題にもなる。このような問題の
対策として従来よりノイズフイルタが使用されて
きた。ノイズとは電子機器を動作させるとき目的
とする信号電圧以外の妨害電圧のことであり、人
工的に発生するものと、自然現象により発生する
ものにわけられる。そして、このようなノイズを
コイルとコンデンサを組み合わせた回路で除去し
ていた。しかしながら、人工的に発生するノイズ
では特に送電線の遮断器の開閉に起因するもの、
自然現象によるノイズでは特に雷サージによるも
の等はノイズの基本周波数が低く5〜20KHz程度
であり、従来のコイルとコンデンサの組み合わせ
だけではこれらのノイズを除去することができな
かつた。このような問題にかんがみ、線間あるい
は線アース間に電圧非直線抵抗体(バリスタ)を
併用したノイズフイルタが最近しばしば使われて
いる。このようなノイズフイルタは極めて広範囲
にわたるノイズが除去しうるので、マイコン制御
機器の誤動作防止に有効である。しかしながら、
このノイズフイルタはそのセツト内部における部
品点数が多くなりコスト高になる上、小形化の技
術動向に反するという欠点があつた。 Recently, electronic equipment has come to require extremely high precision control, and not only industrial equipment but also consumer equipment has come to require extremely high precision due to the application of microcomputers. Furthermore, since logic circuits constituting microcomputers and the like operate using pulse signals, they inevitably have the disadvantage of being susceptible to noise. Therefore, if electronic computers, banking machines, traffic control equipment, etc. malfunction or are destroyed due to noise or surges, it becomes a social problem. Noise filters have conventionally been used as a measure against such problems. Noise is an interfering voltage other than the intended signal voltage when operating electronic equipment, and can be divided into those generated artificially and those generated by natural phenomena. This kind of noise was removed using a circuit that combined a coil and a capacitor. However, among the artificially generated noises, especially those caused by the opening and closing of circuit breakers on power transmission lines,
Noises caused by natural phenomena, especially those caused by lightning surges, have a low fundamental frequency of about 5 to 20 KHz, and it has not been possible to remove these noises using only the conventional combination of coils and capacitors. In view of these problems, noise filters that use a voltage nonlinear resistor (varistor) between lines or between lines and ground have recently been frequently used. Such a noise filter can remove a very wide range of noise, and is therefore effective in preventing malfunctions of microcomputer-controlled equipment. however,
This noise filter had the disadvantage that it required a large number of parts within the set, resulting in high costs, and was contrary to the technological trend toward miniaturization.
発明の目的
本発明は上記欠点に鑑み、バリスタ機能とコン
デンサ機能をあわせて有する複合機能素子を安価
に製造できる複合機能素子の製造方法を提供する
ことにある。OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a method for manufacturing a multi-functional element that can inexpensively produce a multi-functional element having both a varistor function and a capacitor function.
発明の構成
この目的を達成するために本発明の製造方法
は、相対向する面ならびに一方の端面に連続した
電極を形成した絶縁基板上の上記相対向する面
に、誘電体磁器の焼結体を微粉砕して得た粉体
と、酸化亜鉛を主成分とし数種の金属酸化物を含
有する粉体をプラズマ溶射法により両面にそれぞ
れ溶射し誘電体と電圧非直線抵抗体を形成し、さ
らに上記絶縁基板の一方の端面の電極上に絶縁体
を形成して後、上記誘電体と電圧非直線抵抗体と
絶縁体のそれぞれの表面に連続した電極を形成す
るものであり、この方法によつて得られた素子は
バリスタとコンデンサの複合機能を備えているた
め、従来のバリスタとコンデンサを並列に接続す
る回路において1個の素子で用を果たすものであ
る。Composition of the Invention In order to achieve this object, the manufacturing method of the present invention provides a manufacturing method in which a sintered body of dielectric porcelain is placed on the opposing surfaces of an insulating substrate in which continuous electrodes are formed on opposing surfaces and one end surface. The powder obtained by finely pulverizing the powder and the powder containing zinc oxide as the main component and several metal oxides are sprayed on both sides by plasma spraying to form a dielectric material and a voltage nonlinear resistor. Furthermore, after forming an insulator on the electrode on one end surface of the insulating substrate, continuous electrodes are formed on the respective surfaces of the dielectric, the voltage nonlinear resistor, and the insulator. Since the element thus obtained has the combined function of a varistor and a capacitor, it can be used as a single element in a conventional circuit in which a varistor and a capacitor are connected in parallel.
実施例の説明
以下、本発明の一実施例について図面を参照し
ながら説明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明方法により得られる複合機能素
子の等価回路図である。第2図は同じく複合機能
素子の断面図である。1は平板状の絶縁基板、2
は銀電極、3は誘電体、4は電圧非直線抵抗体、
5は絶縁体、6は電極である。 FIG. 1 is an equivalent circuit diagram of a multifunctional device obtained by the method of the present invention. FIG. 2 is also a cross-sectional view of the multifunctional device. 1 is a flat insulating substrate, 2
is a silver electrode, 3 is a dielectric, 4 is a voltage nonlinear resistor,
5 is an insulator, and 6 is an electrode.
まず、BaTiO3の粉末にSrO、SnO2、ZnO2を
0.01〜1.0モル%加え、十分に混合した。これを
直径25mm、厚さ5mmに形成し1200〜1300℃の温度
で1〜3時間焼成して後、この焼結体を微粉砕し
誘電体3の微粉末を作つた。平均粒径は約20μm
である。 First, SrO, SnO 2 and ZnO 2 are added to BaTiO 3 powder.
0.01 to 1.0 mol% was added and thoroughly mixed. This was formed into a diameter of 25 mm and a thickness of 5 mm, and fired at a temperature of 1200 to 1300°C for 1 to 3 hours.The sintered body was then finely ground to produce a fine powder of dielectric material 3. Average particle size is approximately 20μm
It is.
次に、ZnOの粉末に、合計量に対してBi2O3を
0.5モル%、Co2O3を0.5モル%、MnO2を0.5%、
Sb2O3を1.0モル%、Cr2O3を0.5モル%の割合で加
え、十分に混合した。これを直径25mm、厚さ5mm
に成形し、1250℃で2時間焼成して後、この焼結
対を微粉砕し、電圧非直線抵抗体4の微粉末を作
つた。平均粒径は約20μmである。 Next, add Bi 2 O 3 to the ZnO powder for the total amount.
0.5 mol% , 0.5 mol% Co2O3 , 0.5% MnO2 ,
Sb 2 O 3 was added at a ratio of 1.0 mol % and Cr 2 O 3 was added at a ratio of 0.5 mol % and mixed thoroughly. This is 25mm in diameter and 5mm thick.
After sintering at 1250° C. for 2 hours, the sintered couple was pulverized to produce a fine powder of the voltage nonlinear resistor 4. The average particle size is approximately 20 μm.
次に、アルミナ基板1を用意し、その相対向す
る面ならびに一方の端面が電気的に接続されるよ
うに銀電極ペーストを塗布し800℃で焼付けて連
続した銀電極2を形成した。 Next, an alumina substrate 1 was prepared, and a silver electrode paste was applied so that the opposing surfaces and one end surface were electrically connected, and baked at 800° C. to form a continuous silver electrode 2.
次に、この銀電極2を形成した相対向する面の
片面側にプラズマ溶射によつて誘電体3の微粉末
を溶射して誘電体3を形成し、もう一方の面に同
様にプラズマ溶射によつて電圧非直線抵抗体4の
微粉を溶射し、電圧非直線抵抗体4を形成した。
これを700℃〜800℃の温度で2H熱処理を行つた。 Next, fine powder of the dielectric material 3 is sprayed by plasma spraying on one side of the opposing surfaces on which the silver electrodes 2 are formed to form the dielectric material 3, and the other surface is similarly plasma sprayed. Therefore, fine powder of the voltage non-linear resistor 4 was thermally sprayed to form the voltage non-linear resistor 4.
This was subjected to 2H heat treatment at a temperature of 700°C to 800°C.
次に、上記アルミナ基板1の一方の端面に形成
した銀電極2上にSiO2−PbO−B2Oなどからなる
ガラスペースト塗布し、600〜800℃で焼付け、ガ
ラスからなる絶縁体5を形成した。また、上記絶
縁体5をガラスで形成する他に、アルミナ基板1
を150℃まで加熱した後、一方の端面に形成した
銀電極2上にエポキシ等の絶縁樹脂粉体を塗着さ
せ、150℃で硬化させて絶縁体5を形成したもの
も作成した。その後、上記絶縁体5がガラスの場
合には、誘電体3と電圧非直線抵抗体4の表面に
銀電極ペーストを塗布し、800℃で焼付けて電極
6を形成した。また、上記絶縁体5が樹脂の場合
には、アルミニウム等の電気溶射により電極6を
形成した。なお、この電極6は絶縁体5を介して
誘電体3と電圧非直線抵抗体4の両表面にまたが
つて連続して形成されたものである。 Next, a glass paste made of SiO 2 -PbO-B 2 O or the like is applied onto the silver electrode 2 formed on one end surface of the alumina substrate 1 and baked at 600 to 800°C to form an insulator 5 made of glass. did. In addition to forming the insulator 5 from glass, the alumina substrate 1
After heating to 150°C, insulating resin powder such as epoxy was coated on the silver electrode 2 formed on one end face and cured at 150°C to form an insulator 5. Thereafter, when the insulator 5 was glass, a silver electrode paste was applied to the surfaces of the dielectric 3 and the voltage nonlinear resistor 4, and baked at 800° C. to form the electrode 6. Further, when the insulator 5 was made of resin, the electrode 6 was formed by electrolytic spraying of aluminum or the like. Note that this electrode 6 is formed continuously over both surfaces of the dielectric 3 and the voltage nonlinear resistor 4 with an insulator 5 in between.
また、上記プラズマ溶射法は電気的アークによ
つて酸化物を高温で溶融すると同時に、高圧の不
活性ガスによつて飛ばし、対象物に付着させて膜
を形成する方法である。今回の実施例での溶射条
件は60〜80Kwの電気的アークで粉末を溶融し、
溶射距離は10cm、不活性ガスとしてArを使用し
た。 The plasma spraying method is a method in which an oxide is melted at a high temperature by an electric arc, and at the same time is blown away by a high-pressure inert gas to adhere to the object to form a film. The thermal spraying conditions in this example were to melt the powder with an electric arc of 60 to 80Kw,
The spraying distance was 10 cm, and Ar was used as the inert gas.
このようにして得られた上記実施例による複合
機能素子の形状は10mm×10mmで、アルミナ基板1
の厚みは1mmで誘電体3、電圧非直線抵抗体4の
厚みは100μ〜1mmであつた。そして性能は静電
容量3〜10nF、tanδ1.5〜2%、バリスタ電圧40
〜200V、αは20〜40、サージ耐量500〜1000Aで
あつた。これらの特性はプラズマ溶射の時間を変
えることによつて可変である。また、上記実施例
の溶射時間は30秒〜2分間である。 The shape of the multi-functional device obtained in this way according to the above example is 10 mm x 10 mm, and the alumina substrate 1
The thickness of the dielectric material 3 and the voltage nonlinear resistor 4 were 100 μ to 1 mm. And the performance is capacitance 3~10nF, tanδ1.5~2%, varistor voltage 40
~200V, α was 20~40, and surge resistance was 500~1000A. These properties can be varied by varying the plasma spray time. Further, the thermal spraying time in the above example is 30 seconds to 2 minutes.
なお、誘電体としてBaTiO3系磁器を用いた
が、本発明の効果から考えて磁器コンデンサ材料
でプラズマ溶射によつて誘電体を形成できるもの
ならいずれも有効である。 Although BaTiO 3 ceramic was used as the dielectric material, any ceramic capacitor material that can be used to form a dielectric material by plasma spraying is effective in view of the effects of the present invention.
また、絶縁基板としてアルミナ基板を用いたが
耐熱性に優れその上に電極を形成できるものであ
れば、いずれも有効である。 Further, although an alumina substrate is used as the insulating substrate, any substrate having excellent heat resistance and on which electrodes can be formed is effective.
発明の効果
以上、詳細に述べたように、本発明は電極を形
成した絶縁基板の相対向する面にプラズマ溶射に
よつて、誘電体と電圧非直線抵抗体を形成するこ
とにより、きわめて容易にコンデンサとバリスタ
の両機能を有する素子を提供することができ、電
子機器のノイズ対策部品として、その実用的価値
は大なるものである。Effects of the Invention As described above in detail, the present invention can be achieved by forming a dielectric material and a voltage nonlinear resistor by plasma spraying on opposing surfaces of an insulating substrate on which electrodes are formed. It is possible to provide an element that has both the functions of a capacitor and a varistor, and its practical value is great as a noise countermeasure component for electronic equipment.
第1図は本発明の方法により得られた複合機能
素子の等価回路を示す図、第2図は同じく本発明
の方法の実施例により得られた複合機能素子の断
面図である。
1……絶縁基板(アルミナ基板)、2……銀電
極、3……誘電体、4……電圧非直線抵抗体、5
……絶縁体、6……電極。
FIG. 1 is a diagram showing an equivalent circuit of a multi-functional device obtained by the method of the present invention, and FIG. 2 is a cross-sectional view of the multi-functional device also obtained by an embodiment of the method of the present invention. 1... Insulating substrate (alumina substrate), 2... Silver electrode, 3... Dielectric, 4... Voltage nonlinear resistor, 5
...Insulator, 6...Electrode.
Claims (1)
びに一方の端面に連続した電極を形成し、この相
対向する面の一方の電極上に誘電体磁器の焼結体
を微粉砕した粉体をプラズマ溶射法により溶射し
て誘電体を形成すると共に、上記相対向する面の
他方の電極上に酸化亜鉛を主成分とし数種の金属
酸化物を含有する粉体を同様に形成して電圧非直
線抵抗体を形成し、さらに上記絶縁基板の一方の
端面の電極上に絶縁体を形成して後、上記誘電体
と電圧非直線抵抗体と絶縁体のそれぞれの表面に
連続した電極を形成する複合機能素子の製造方
法。1. Continuous electrodes are formed on opposing surfaces and one end surface of an insulating substrate with excellent heat resistance, and powder obtained by pulverizing a sintered body of dielectric porcelain is placed on one electrode on the opposing surfaces. A dielectric material is formed by thermal spraying using a plasma spraying method, and powder containing zinc oxide as a main component and several kinds of metal oxides is similarly formed on the other electrode on the opposing surfaces to provide voltage resistance. After forming a linear resistor and further forming an insulator on an electrode on one end surface of the insulating substrate, continuous electrodes are formed on the respective surfaces of the dielectric, the voltage nonlinear resistor, and the insulator. A method for manufacturing a multifunctional device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233882A JPS60124909A (en) | 1983-12-12 | 1983-12-12 | Manufacturing method of multifunctional device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233882A JPS60124909A (en) | 1983-12-12 | 1983-12-12 | Manufacturing method of multifunctional device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60124909A JPS60124909A (en) | 1985-07-04 |
| JPH0449770B2 true JPH0449770B2 (en) | 1992-08-12 |
Family
ID=16962035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58233882A Granted JPS60124909A (en) | 1983-12-12 | 1983-12-12 | Manufacturing method of multifunctional device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60124909A (en) |
-
1983
- 1983-12-12 JP JP58233882A patent/JPS60124909A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60124909A (en) | 1985-07-04 |
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