JPH0450120A - Magnetic optical material - Google Patents
Magnetic optical materialInfo
- Publication number
- JPH0450120A JPH0450120A JP16079890A JP16079890A JPH0450120A JP H0450120 A JPH0450120 A JP H0450120A JP 16079890 A JP16079890 A JP 16079890A JP 16079890 A JP16079890 A JP 16079890A JP H0450120 A JPH0450120 A JP H0450120A
- Authority
- JP
- Japan
- Prior art keywords
- crystal film
- optical material
- substrate
- magnetic
- coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Compounds Of Iron (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は光アイソレータや光サーキュレータなどに用
いられる磁気光学材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magneto-optical material used for optical isolators, optical circulators, etc.
[従来の技術]
従来より、半導体レーザから放出された光線と戻り光と
を分離するための光アイソレータとして、あるいは光フ
アイバ損失測定において光ファイノくの後方散乱光を受
光ダイオードのみに導くための光サーキュレータとして
ファラデー回転効果を有する磁気光学材料が利用されて
いる。[Prior Art] Conventionally, optical isolators have been used to separate the light beam emitted from a semiconductor laser from the returning light, or to guide backscattered light from an optical fiber only to a light receiving diode in optical fiber loss measurement. A magneto-optical material having a Faraday rotation effect is used as a circulator.
ファラデー回転効果は磁気光学材料が磁界の中に置かれ
た場合、材料中を磁界方向に進む光の偏光面が回転する
現象であり、光アイソレータ等に適用される磁気光学素
子としては、ファラデー回転係数(単位長当りの回転角
)が大きいこと、且つファラデー回転係数の温度依存性
が少ないこと、更に挿入損失が少ないことが条件となる
。The Faraday rotation effect is a phenomenon in which when a magneto-optical material is placed in a magnetic field, the plane of polarization of light traveling in the direction of the magnetic field rotates. The conditions are that the coefficient (rotation angle per unit length) is large, that the Faraday rotation coefficient has little temperature dependence, and that insertion loss is small.
この種の磁気光学材料として、Bi置換を行った希土類
鉄ガーネット(一般式Bi、REアFe。This kind of magneto-optical material is a rare earth iron garnet substituted with Bi (general formula Bi, RE-Fe).
0.2で表わされるもので、REは希土類を表わし、x
十y=3である)が開発されている。このような鉄ガー
ネツト結晶は基板となるガーネット上に液相エピタキシ
ャル法によって育成することができ、Biの置換量が多
いほどファラデー回転係数が向上する。Biを多量に置
換するために、FeをAl5Ga等の非磁性元素で置換
することが提案されている(特開昭61−20926号
)。0.2, RE represents rare earth, x
y=3) has been developed. Such an iron garnet crystal can be grown on a garnet substrate by a liquid phase epitaxial method, and the Faraday rotation coefficient improves as the amount of Bi substitution increases. In order to replace a large amount of Bi, it has been proposed to replace Fe with a non-magnetic element such as Al5Ga (Japanese Unexamined Patent Publication No. 20926/1982).
一方、Biはイオン半径が大であるため、Bi量が多く
なると基板との格子定数の差が大きくなり格子整合性が
悪い。このため、希土類元素としてイオン半径の小さな
希土類元素を用いることにより、基板との格子整合性を
図っている(特開昭63−291028号、特開平1−
217313号)。On the other hand, since Bi has a large ionic radius, as the amount of Bi increases, the difference in lattice constant with the substrate increases, resulting in poor lattice matching. For this reason, lattice matching with the substrate is achieved by using rare earth elements with a small ionic radius (JP-A-63-291028, JP-A-1-1999).
No. 217313).
[発明が解決しようとする課題]
しかし、Feを非磁性元素で置換した場合には、得られ
る磁気光学材料の温度特性が劣化するという問題点があ
る。また、希土類鉄ガーネットを形成する希土類は、1
種又は2種以上を混合して用いられているが、それぞれ
温度特性(温度係数の符号)が異なり、一種のみを用い
た場合或いは組合せが適当でない場合にはファラデー回
転係数の温度係数が大きくなり、磁気光学素子として実
用できない。[Problems to be Solved by the Invention] However, when Fe is replaced with a nonmagnetic element, there is a problem that the temperature characteristics of the resulting magneto-optical material deteriorate. In addition, the rare earths that form rare earth iron garnet are 1
Although these species or a mixture of two or more species are used, each has different temperature characteristics (the sign of the temperature coefficient), and if only one species is used or the combination is inappropriate, the temperature coefficient of the Faraday rotation coefficient will become large. , cannot be put to practical use as a magneto-optical element.
本発明は特定の希土類を2種組み合わせることによりフ
ァラデー回転係数が大きく、温度係数の小さい磁気光学
材料を提供することを目的とし、更に外部飽和磁界が小
さく、部品として用いる磁石の小型化を可能とする磁気
光学材料を提供することを目的とする。The purpose of the present invention is to provide a magneto-optical material with a large Faraday rotation coefficient and a small temperature coefficient by combining two types of specific rare earth elements. Furthermore, the external saturation magnetic field is small, making it possible to miniaturize the magnet used as a component. The purpose is to provide a magneto-optical material that
[課題を解決するための手段]
このような目的を達成するために本発明者等は温度係数
の符号が異なる二種の希土類の組合せについて鋭意研究
の結果、希土類としてErとGdを組合せた場合にファ
ラデー回転係数が極めて高く、しかも外部飽和磁界が小
さいことを見出し本発明に至ったものである。[Means for Solving the Problem] In order to achieve the above object, the inventors of the present invention have conducted extensive research on combinations of two types of rare earths with different signs of temperature coefficients, and have found that when Er and Gd are combined as rare earths. The inventors discovered that the Faraday rotation coefficient is extremely high and the external saturation magnetic field is small, leading to the present invention.
即ち本発明の磁気光学材料は、非磁性ガーネット基板上
に育成され、組成式
%式%
で表わされる磁性ガーネット結晶膜から成るものである
。That is, the magneto-optical material of the present invention consists of a magnetic garnet crystal film grown on a non-magnetic garnet substrate and represented by the compositional formula %.
ここで、非磁性ガーネット基板は、GdaGa。Here, the nonmagnetic garnet substrate is GdaGa.
012、Sm5Ga、O+z、NdaGa60+2(以
下NGGという)、Ca−Mg−Zr置換GdxGas
O12(以下5GGGという)等が用いられるが、上記
組成の結晶膜は格子定数が12.497A前後の5GG
G基板との格子整合性が最もよい。012, Sm5Ga, O+z, NdaGa60+2 (hereinafter referred to as NGG), Ca-Mg-Zr substituted GdxGas
O12 (hereinafter referred to as 5GGG) etc. are used, but the crystal film with the above composition is 5GG with a lattice constant of around 12.497A.
It has the best lattice matching with the G substrate.
磁性ガーネット結晶膜の育成は液相エピタキシャル法に
よって行う。即ち、PbO1B*Os。The magnetic garnet crystal film is grown by liquid phase epitaxial method. That is, PbO1B*Os.
Bi*Osのフラックス中に、Fe*Oss ErtO
ssG d * Osを融かして成る所定組成の融液中
にガーネット基板を浸漬することによって基板上に厚さ
500μm以上の結晶膜を育成することができる。In the flux of Bi*Os, Fe*Oss ErtO
By immersing a garnet substrate in a melt of a predetermined composition made by melting ssG d *Os, a crystal film with a thickness of 500 μm or more can be grown on the substrate.
このような融液組成において、得られる結晶膜のはファ
ラデー回転係数は極めて高いので、結晶膜の厚さを従来
の磁性ガーネット結晶膜に比してはかなり薄く(例えば
、202μm以下に)でき、従って育成時間の短縮を図
ることができる。With such a melt composition, the Faraday rotation coefficient of the obtained crystal film is extremely high, so the thickness of the crystal film can be made considerably thinner (for example, 202 μm or less) compared to conventional magnetic garnet crystal films. Therefore, the breeding time can be shortened.
得られた結晶膜は必要に応じ基板を全部又は1部削り取
った後、光アイソレータ等の磁気光学素子として用いる
。The obtained crystal film is used as a magneto-optical element such as an optical isolator after removing all or part of the substrate as necessary.
[実施例] 以下、本発明の詳細な説明する。[Example] The present invention will be explained in detail below.
実施例1
表1に示す組成の融液中(735℃)に5GGG基板を
5分浸漬し、基板上に鏡面を呈する厚さ5μmの結晶膜
を得た。Example 1 A 5GGG substrate was immersed in a melt having the composition shown in Table 1 (735° C.) for 5 minutes to obtain a 5 μm thick crystal film exhibiting a mirror surface on the substrate.
得られた結晶膜の組成、波長1.3μmにおけるファラ
デー回転係数および外部飽和磁界を表2に示す。Table 2 shows the composition of the obtained crystal film, the Faraday rotation coefficient at a wavelength of 1.3 μm, and the external saturation magnetic field.
表1
表2
実施例2
実施例1と同様の融液中にNGG基板を5分浸漬し、基
板上に鏡面を呈する厚さ5μmの結晶膜を得た。Table 1 Table 2 Example 2 An NGG substrate was immersed in the same melt as in Example 1 for 5 minutes to obtain a 5 μm thick crystal film exhibiting a mirror surface on the substrate.
[発明の効果コ
以上の実施例からも明らかなように、本発明によれば、
磁性ガーネット結晶膜の希土類として温度係数の符号が
異なるErとGdを用いることにより、ファラデー回転
係数が極めて大きく、温度係数の小さい磁気光学材料を
得ることができる。[Effects of the Invention] As is clear from the above embodiments, according to the present invention,
By using Er and Gd, which have different signs of temperature coefficients, as rare earth elements in the magnetic garnet crystal film, it is possible to obtain a magneto-optical material with an extremely large Faraday rotation coefficient and a small temperature coefficient.
従って、極めて薄い結晶膜を光アイソレータ等の磁気光
学素子として用いることができるので、素子の小型化、
低コスト化が実現でき、結晶育成時間を短縮できる。Therefore, an extremely thin crystal film can be used as a magneto-optical element such as an optical isolator, which reduces the size of the element.
Cost reduction can be achieved and crystal growth time can be shortened.
更に本発明の磁気光学材料は外部飽和磁界が小さいので
、部品として用いる磁石を小さいものとすることができ
、装置全体としての小型化を実現することができる。Further, since the magneto-optical material of the present invention has a small external saturation magnetic field, the magnet used as a component can be made small, and the entire device can be made smaller.
代理人 弁理士 守 谷 −雄Agent Patent Attorney Moritani - Yu
Claims (1)
_−_x_−_yGd_xBi_yFe_5O_1_2
(但し、0<x<3、0<y<3である) で表わされる磁性ガーネット結晶膜から成ることを特徴
とする磁気光学材料。[Claims] Grown on a non-magnetic garnet substrate, having the composition formula Er_3
_−_x_−_yGd_xBi_yFe_5O_1_2
(However, 0<x<3, 0<y<3) A magneto-optical material comprising a magnetic garnet crystal film represented by the following formula.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16079890A JPH0450120A (en) | 1990-06-19 | 1990-06-19 | Magnetic optical material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16079890A JPH0450120A (en) | 1990-06-19 | 1990-06-19 | Magnetic optical material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0450120A true JPH0450120A (en) | 1992-02-19 |
Family
ID=15722682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16079890A Pending JPH0450120A (en) | 1990-06-19 | 1990-06-19 | Magnetic optical material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0450120A (en) |
-
1990
- 1990-06-19 JP JP16079890A patent/JPH0450120A/en active Pending
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