JPH0451408A - Dielectric porcelain composite - Google Patents

Dielectric porcelain composite

Info

Publication number
JPH0451408A
JPH0451408A JP2159005A JP15900590A JPH0451408A JP H0451408 A JPH0451408 A JP H0451408A JP 2159005 A JP2159005 A JP 2159005A JP 15900590 A JP15900590 A JP 15900590A JP H0451408 A JPH0451408 A JP H0451408A
Authority
JP
Japan
Prior art keywords
pts
dielectric
nb2o5
mno2
main component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2159005A
Other languages
Japanese (ja)
Inventor
Tetsuo Wano
和野 哲雄
Hidenori Kuramitsu
秀紀 倉光
Kazuhiro Komatsu
和博 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2159005A priority Critical patent/JPH0451408A/en
Publication of JPH0451408A publication Critical patent/JPH0451408A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To enhance dielectric constant, dielectric breakdown voltage and insulation resistance, and reduce a crystal grain diameter size to reduce dielectric substance thickness by having specific pts.wt. of Nb2O5 and MnO2 contained in 100 pts.wt. of a main component constituted within a mole ratio in a specific formula wherein (x), (y), and (z) are enclosed by points (a), (b), (c), and (d). CONSTITUTION:In 100 pts.wt. of a main component constituted within a mole ratio wherein (x), (y), and (z) are enclosed by points (a), (b), (c), and (d), as shown in the Table 1 when a general formula is expressed as xBaO-yTiO2-zCeO2 (where x+y+z=1.00), 0.3-3.0 pts.wt. of Nb2O5 and 0.05-0.25 pts.wt. of MnO2 are contained. For example, powder of high purity of BaCO3, TiO2, CeO2, Nb2O5 and MnO2 is weighed, put in a ball mill with pure water, wet-blended, dehydrated and dried. It is put in a high-alumina crucible to be calcined in the atomophere. It is put in a ball mill with pure water, wet-milled, dehydrated and dried. An organic binder is added for homogenizing and grading process is performed through a screen. A metal mold and hydraulic press are used for forming. It is put in an alumina sheath where zirconium power is laid on to obtain dielectric porcelain.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は高い誘電率を有し、さらに絶縁破壊電圧、絶縁
抵抗が高く、また結晶粒径が小さい誘電体磁器組成物に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a dielectric ceramic composition having a high dielectric constant, high dielectric breakdown voltage and high insulation resistance, and small crystal grain size.

従来の技術 従来から、高い誘電率を有する誘電体磁器組成物として
、BaTiO3にBad、 Cab、 TiO2,Zr
0zなどを適当量添加したものが知られている。
BACKGROUND ART Conventionally, as a dielectric ceramic composition having a high dielectric constant, BaTiO3 is combined with Bad, Cab, TiO2, and Zr.
It is known that a suitable amount of 0z or the like is added.

発明が解決しようとする課題 しかし、これらの誘電体磁器組成物は結晶粒径が10〜
20μmと大きく、気孔率も高いため、積層セラミック
コンデンサのように誘電体厚みが薄い製品への応用につ
いては、絶縁破壊電圧が低い、外部電極を形成するメツ
キ処理時の絶縁破壊電圧および絶縁抵抗の低下などの課
題があった。
Problems to be Solved by the Invention However, these dielectric ceramic compositions have crystal grain sizes of 10 to 10.
Since it is large at 20 μm and has a high porosity, it is suitable for application to products with thin dielectrics such as multilayer ceramic capacitors, which have low dielectric breakdown voltage and low dielectric breakdown voltage and insulation resistance during plating processing to form external electrodes. There were issues such as a decline in

課題を解決するための手段 これらの課題を解決するために本発明は、一般式 x BaO−y Tie□−z CeO□と表した時(
ただし、χ+y+z=1.OO) 、x、  y、  
zが以下に表す各点a、  b、  c、  dで囲ま
れるモル比の範囲からなる主成分100重量部に対し、
Nb2O5を0.3〜3.0重量部(!: MnO□を
0.05〜0.25重量部含有することを特徴とする誘
電体磁器組成物を提供するものである。
Means for Solving the Problems In order to solve these problems, the present invention solves the problems when expressed as the general formula x BaO-y Tie□-z CeO□ (
However, χ+y+z=1. OO), x, y,
For 100 parts by weight of the main component, where z consists of the molar ratio range surrounded by each point a, b, c, d shown below,
The present invention provides a dielectric ceramic composition characterized in that it contains 0.3 to 3.0 parts by weight of Nb2O5 (!: 0.05 to 0.25 parts by weight of MnO□).

作用 第1図は本発明にかかる主成分の組成範囲を示す三元図
であり、組成範囲を限定した理由を第1図を参照しなが
ら説明する。まず、A領域では誘電率が小さく、実用的
でなくなる。また、B領域ではキュリー点がマイナス側
に太き(なりすぎ、温度特性の静電容量変化率がプラス
側に大きくはずれ実用的でなくなる。さらに、C領域で
は燃結が著しく困難である。さらにまた、D領域では誘
電率が小さく、実用的でなくなる。
FIG. 1 is a ternary diagram showing the composition range of the main components according to the present invention, and the reason for limiting the composition range will be explained with reference to FIG. First, the dielectric constant in region A is small, making it impractical. In addition, in the B region, the Curie point becomes too large on the negative side, and the capacitance change rate of the temperature characteristic greatly deviates to the positive side, making it impractical.Furthermore, in the C region, sintering is extremely difficult. Further, in the D region, the dielectric constant is small, making it impractical.

」−記の組成系、組成範囲にかかる本発明の構成によれ
ば、主成分に対し、Nb、O,を含有することにより、
静電容量と絶縁抵抗の積(CR積)と絶縁破壊電圧を向
上さ・ける効果を有しているが、その含有率が主成分1
00重量部に対し、0.3重量部未満では含有効果はな
く、一方3.0重量部を超えるとキュリー点がマイナス
側にずれ誘電率を低下させる。また、主成分に対し、M
nO□を含有することにより、cr積を大きくする効果
を有しているが、その含有率が主成分100重量部に対
し、0.05重量部未満あるいは0.25重量部を超え
るとcr積が低下する。さらに、本発明の誘電体磁器組
成物はその結晶粒径を5〜10μmとすることができる
According to the composition system and composition range of the present invention, by containing Nb and O in the main components,
It has the effect of improving the product of capacitance and insulation resistance (CR product) and dielectric breakdown voltage, but its content is
If the content is less than 0.3 parts by weight, there will be no effect, while if it exceeds 3.0 parts by weight, the Curie point will shift to the negative side and the dielectric constant will decrease. Also, for the main component, M
Containing nO□ has the effect of increasing the CR product, but if the content is less than 0.05 parts by weight or more than 0.25 parts by weight based on 100 parts by weight of the main component, the CR product increases. decreases. Furthermore, the dielectric ceramic composition of the present invention can have a crystal grain size of 5 to 10 μm.

実施例 以下に、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.

まず、出発原料には化学的に高純度のBaC0,3Ti
Oz、 Ce0z、 NbzOsおよびMn0z粉末を
下記の第1表に示す組成比になるように秤量し、めのう
ボールを備えたゴム内張りのボールミルに純水とともに
入れ、湿式混合後、脱水乾燥した。次に、この乾燥粉末
を高アルミナ質のルツボに入れ、空気中で1100°C
にて2時間仮焼した。次いで、この仮焼粉末をめのうボ
ールを備えたゴム内張りのボールミルに純水とともに入
れ、湿式粉砕後、脱水乾燥した。次に、この粉砕粉末に
有機バインダーを加え、均質とした後、32メソシユの
ふるいを通して整粒し、金型と油圧プレスを用いて成形
圧力1t。
First, the starting material is chemically highly purified BaC0,3Ti.
Oz, Ce0z, NbzOs, and Mn0z powders were weighed to have the composition ratios shown in Table 1 below, placed in a rubber-lined ball mill equipped with agate balls together with pure water, wet mixed, and then dehydrated and dried. Next, this dry powder was placed in a high alumina crucible and heated to 1100°C in air.
It was calcined for 2 hours. Next, this calcined powder was put into a rubber-lined ball mill equipped with agate balls together with pure water, wet-pulverized, and then dehydrated and dried. Next, an organic binder was added to the pulverized powder to make it homogeneous, and then the particles were sized through a 32-mesh sieve, and the molding pressure was 1 t using a mold and a hydraulic press.

n/caで直径15闘、厚み0.4mmに成形した。次
いで、この成形円板をジルコニア粉末を敷いたアルミナ
質のザヤに入れ、空気中にて下記の第1表に示す組成比
の誘電体磁器を得た。
It was molded to a diameter of 15 mm and a thickness of 0.4 mm at n/ca. Next, this molded disk was placed in an alumina sheath covered with zirconia powder, and dielectric porcelain having the composition ratio shown in Table 1 below was obtained in air.

このようにして得られた誘電体磁器円板は、厚みと直径
を測定し、誘電率、誘電損失、静電容量温度特性測定用
試料は、誘電体磁器円板の両面全体に銀電極を焼き付け
、また絶縁破壊電圧および絶縁抵抗測定用試料は、誘電
体磁器円板の外周より1mm内側まで銀電極を焼き付け
た。そして、誘電率、誘電損失、静電容量温度特性は、
横河・ヒューレント・バノカード■製デジタルL CR
メータのモデル4274 Aを使用し、測定温度20°
C3測定電圧1.OVrms、測定周波数1kHzでの
測定より求めた。また絶縁破壊電圧は、菊水電子工業■
製の高圧直流電源での測定より求めた。さらに、絶縁抵
抗は、クケダ理研工業■製の高抵抗計での測定より求め
た。
The thickness and diameter of the dielectric porcelain disk obtained in this way were measured, and the samples for measuring permittivity, dielectric loss, and capacitance temperature characteristics were prepared by baking silver electrodes on both sides of the dielectric porcelain disk. For the samples for measuring dielectric breakdown voltage and insulation resistance, a silver electrode was baked to a depth of 1 mm inside the outer periphery of a dielectric ceramic disk. The dielectric constant, dielectric loss, and capacitance temperature characteristics are
Digital L CR manufactured by Yokogawa Hurent Vano Card ■
Measured temperature 20° using meter model 4274 A.
C3 measurement voltage 1. OVrms was determined by measurement at a measurement frequency of 1 kHz. In addition, the dielectric breakdown voltage is determined by Kikusui Electronics Co., Ltd.
It was determined from measurements using a high-voltage DC power supply made by Manufacturer. Furthermore, the insulation resistance was determined by measurement using a high resistance meter manufactured by Kukeda Riken Kogyo ■.

それから、誘電率は次式より求めた。Then, the dielectric constant was calculated from the following formula.

K= 143.8X Co X t / D”K :誘
電率 Co:20°Cでの静電容量(pP )D =誘電体磁
器円板の直径 (mm )t :誘電体磁器円板の厚み
 (n+m )また、絶縁破壊電圧は次式より求めた。
K = 143.8X Co n+m) Furthermore, the dielectric breakdown voltage was determined from the following formula.

B1=BO/l B1:絶縁破壊電圧(kv/mm) BO:絶縁破壊電圧(kv ) さらに、絶縁抵抗は、CR積として次式より求めた。B1=BO/l B1: Breakdown voltage (kv/mm) BO: Breakdown voltage (kv) Furthermore, the insulation resistance was determined as a CR product using the following formula.

CR=Co XRO/10′2 CR:CR積(Mn・μF) RO:絶縁抵抗(Ω) さらにまた、結晶粒径は、倍率400での光学顕微鏡観
察より求めた。試験条件および試験結果を下記の第1表
に併せて示す。
CR=Co The test conditions and test results are also shown in Table 1 below.

(以下余白) なお、実施例における誘電体磁器の作製方法では、Ba
C0z、 TiO2,Ce0z、  Nb2o5および
MnO2を使用したが、この方法に限定されるものでは
なく、所望の組成比になるようにBaTiO3などの化
合物、あるいは炭酸塩、水酸化物など空気中での加熱に
より、[laO,Ti0z、 CeO,11bzosお
よびMn0zとなる化合物を使用しても実施例と同程度
の特性を得ることができる。
(Left below) In addition, in the method for producing dielectric ceramic in the example, Ba
Although C0z, TiO2, Ce0z, Nb2o5, and MnO2 were used, the method is not limited to this method. Compounds such as BaTiO3, carbonates, hydroxides, etc. may be heated in air to obtain the desired composition ratio. Accordingly, even if compounds such as [laO, Ti0z, CeO, 11bzos, and Mn0z are used, properties comparable to those of the examples can be obtained.

また、一般に使用されている工業用BaTi0iのBa
/Tiの比は、0.98以上であり、BaTiO3を出
発原料として使用した場合、不足分のTiO□を添加し
ても実施例と同程度の特性を得ることができる。
In addition, BaTiOi of commonly used industrial BaTiOi
/Ti ratio is 0.98 or more, and when BaTiO3 is used as a starting material, properties comparable to those of the examples can be obtained even if the insufficient amount of TiO□ is added.

さらに、主成分をあらかじめ仮焼し、副成分を添加して
も実施例と同程度の特性を得ることができる。
Furthermore, even if the main component is calcined in advance and the subcomponents are added, properties comparable to those of the examples can be obtained.

さらにまた、誘電体磁器用として一般に使用される工業
用原料の酸化チタン、例えばチタン工業■製酸化チタン
KA−10、古河鉱業■製酸化チタンFA−5Hには最
大0.45重量%のNbzOsが含まれるが、これらの
酸化チタンを使用して主成分の誘電体磁器を作成しても
、主成分100重量%に対して、Nb2O5の含を量は
最大で0.17重量%であり、本発明の範囲外であるが
、工業用原料の酸化チタン中のNb2O5量を考慮し、
不足分のNb2O5を含有させることにより、実施例と
同程度の特性を得ることかできる。
Furthermore, titanium oxide, an industrial raw material commonly used for dielectric porcelain, such as titanium oxide KA-10 manufactured by Titan Industries ■ and titanium oxide FA-5H manufactured by Furukawa Mining ■, contains up to 0.45% by weight of NbzOs. However, even if these titanium oxides are used to create dielectric porcelain as the main component, the content of Nb2O5 is at most 0.17% by weight based on 100% by weight of the main component. Although it is outside the scope of the invention, considering the amount of Nb2O5 in titanium oxide, which is an industrial raw material,
By containing the insufficient amount of Nb2O5, characteristics comparable to those of the examples can be obtained.

それから、上述の基本組成のほかに、ZnO,5in2
Fe20aなど、一般にフラックスと考えられている塩
類、酸化物などを特性を損なわない範囲で加えることも
できる。
Then, in addition to the basic composition mentioned above, ZnO, 5in2
Salts, oxides, etc., which are generally considered to be fluxes, such as Fe20a, can also be added within a range that does not impair the properties.

発明の効果 以上のように本発明によれば、高い誘電率を有し、さら
に絶縁破壊電圧および絶縁抵抗が高く、また、結晶粒径
が小さいため誘電体厚みを薄くでき、製品の小型化、大
容量化が可能である。
Effects of the Invention As described above, the present invention has a high dielectric constant, high dielectric breakdown voltage and high insulation resistance, and has a small crystal grain size, so the dielectric thickness can be reduced, and the product can be made smaller. Larger capacity is possible.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明にかかる組成範囲を説明する三元図であ
る。
FIG. 1 is a ternary diagram illustrating the composition range according to the present invention.

Claims (1)

【特許請求の範囲】 一般式 xBaO−yTiO_2−zCeO_2と表した時(た
だし、x+y+z=1.00)、x,y,zが以下に表
す各点a,b,c,dで囲まれるモル比の範囲からなる
主成分100重量に対し、Nb_2O_2を0.3〜3
.0重量部とMnO_2を0.05〜0.25重量部含
有することを特徴とする誘電体磁器組成物。
[Claims] When expressed as the general formula xBaO-yTiO_2-zCeO_2 (where x+y+z=1.00), the molar ratio where x, y, and z are surrounded by the points a, b, c, and d shown below. 0.3 to 3 Nb_2O_2 to 100 weight of the main component consisting of the range of
.. A dielectric ceramic composition characterized by containing 0 parts by weight of MnO_2 and 0.05 to 0.25 parts by weight of MnO_2.
JP2159005A 1990-06-18 1990-06-18 Dielectric porcelain composite Pending JPH0451408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2159005A JPH0451408A (en) 1990-06-18 1990-06-18 Dielectric porcelain composite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2159005A JPH0451408A (en) 1990-06-18 1990-06-18 Dielectric porcelain composite

Publications (1)

Publication Number Publication Date
JPH0451408A true JPH0451408A (en) 1992-02-19

Family

ID=15684160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2159005A Pending JPH0451408A (en) 1990-06-18 1990-06-18 Dielectric porcelain composite

Country Status (1)

Country Link
JP (1) JPH0451408A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024383A (en) * 2015-03-31 2016-10-12 Tdk株式会社 Multilayer Ceramic Electronic Components
CN114180949A (en) * 2021-12-16 2022-03-15 大富科技(安徽)股份有限公司 Ceramic material and preparation method thereof, ceramic sintered body and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024383A (en) * 2015-03-31 2016-10-12 Tdk株式会社 Multilayer Ceramic Electronic Components
CN114180949A (en) * 2021-12-16 2022-03-15 大富科技(安徽)股份有限公司 Ceramic material and preparation method thereof, ceramic sintered body and preparation method thereof

Similar Documents

Publication Publication Date Title
JPH0451408A (en) Dielectric porcelain composite
JP2917505B2 (en) Multilayer ceramic capacitors
JP2676778B2 (en) Dielectric porcelain composition
JP2936661B2 (en) Dielectric porcelain composition
JPH04174907A (en) Dielectric porcelain composition material
JPH04174906A (en) Dielectric porcelain composition material
JPH04174904A (en) Dielectric porcelain composition material
JPH04357608A (en) Dielectric porcelain composition
JP2568565B2 (en) Dielectric porcelain composition
JP2917454B2 (en) Dielectric porcelain composition
JPH06302219A (en) Dielectric porcelain composition
JPH06260026A (en) Dielectric porcelain composition
JP2921048B2 (en) Dielectric porcelain composition
JPH04174905A (en) Dielectric porcelain composite material
JPH04174908A (en) dielectric porcelain composition
JPH04357616A (en) Dielectric porcelain composition
JPH04357620A (en) Dielectric porcelain composition
JPH04167305A (en) dielectric porcelain composition
JPH06260027A (en) Dielectric porcelain composition
JPH02267162A (en) Dielectric ceramic composition
JPH0467514A (en) Dielectric porcelain composite
JPH02242517A (en) dielectric porcelain composition
JPH0323260A (en) multilayer ceramic capacitor
JPH02242516A (en) Dielectric porcelain composition
JPH06283028A (en) Dielectric ceramic composite