JPH0451601A - Case for high frequency amplifier - Google Patents
Case for high frequency amplifierInfo
- Publication number
- JPH0451601A JPH0451601A JP2160392A JP16039290A JPH0451601A JP H0451601 A JPH0451601 A JP H0451601A JP 2160392 A JP2160392 A JP 2160392A JP 16039290 A JP16039290 A JP 16039290A JP H0451601 A JPH0451601 A JP H0451601A
- Authority
- JP
- Japan
- Prior art keywords
- frequency amplifier
- high frequency
- wavelength
- lid
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
- Waveguide Connection Structure (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は高周波増幅回路を収容するための高周波増幅器
用筺体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high frequency amplifier housing for accommodating a high frequency amplifier circuit.
[従来の技術]
マイクロ波帯で使用される能動素子として一般にGaA
s電界効果トランジスタ(GaAsFET)が知られて
いる。近年は益々高利得、高帯域化の傾向にあり、Ga
AsFETに受動素子等を組合わせたものを数種類結合
して、ひとつの高周波増幅器として機能する高周波増幅
回路を構成し、この高周波増幅回路を筺体に収納して広
帯域、高利得の高周波増幅器を実現している。[Prior art] GaA is generally used as an active element used in the microwave band.
s field effect transistors (GaAsFETs) are known. In recent years, there has been a trend toward higher gain and higher bandwidth, and Ga
A high-frequency amplifier circuit that functions as a single high-frequency amplifier is constructed by combining several types of AsFETs with passive elements, etc., and this high-frequency amplifier circuit is housed in a housing to realize a wideband, high-gain high-frequency amplifier. ing.
従来の高周波増幅器を第2図に示す、同図(a)は蓋体
の一部を切り欠いた状態の平面図、同図(b)はA−A
I!断面図である。A conventional high-frequency amplifier is shown in Fig. 2. Fig. 2 (a) is a plan view with a portion of the lid body cut away, and Fig. 2 (b) is a plan view taken along A-A.
I! FIG.
筺体の本#10には高周波増幅回路を載置するために四
部が形成されている。高周波増幅回路は複数の高周波回
路ユニットにより構成される。GaAsPET、受動素
子等により構成される各高周波回路ユニットは、アルミ
ナ等の誘電体基板14上に形成される。誘電体基板14
は金属製のキャリア12に搭載され、キャリア12は捩
子16により本体10の凹部の底部に固定される。各高
周波回路ユニットは、各誘電体基板14上の信号導体面
を接続用リボン(図示せず)を用いて半田付は又は熱圧
着して接続される9本体10の相対する側壁には高周波
用の入力コネクタ18及び出力コネクタ19が設けられ
、高周波回路ユニットが入力コネクタ18及び出力コネ
クタ19に接続されている0本体10の凹部の開口は蓋
体20により密封される。Book #10 of the casing has four parts for mounting a high frequency amplification circuit. The high frequency amplifier circuit is composed of a plurality of high frequency circuit units. Each high frequency circuit unit composed of GaAsPET, passive elements, etc. is formed on a dielectric substrate 14 made of alumina or the like. Dielectric substrate 14
is mounted on a metal carrier 12, and the carrier 12 is fixed to the bottom of the recess of the main body 10 by a screw 16. Each high-frequency circuit unit is connected to the signal conductor surface on each dielectric substrate 14 by soldering or thermocompression bonding using a connecting ribbon (not shown). An input connector 18 and an output connector 19 are provided, and the opening of the concave portion of the main body 10, in which the high frequency circuit unit is connected to the input connector 18 and the output connector 19, is sealed by a lid body 20.
このように構成された従来の高周波増幅器の筺体の構造
は、収納する高周波回路ユニットの数及び大きさにより
決定される。特に、筺体の本体10の側壁の間隔1はキ
ャリア12の寸法に応じて定まる。The structure of the casing of the conventional high-frequency amplifier configured as described above is determined by the number and size of the high-frequency circuit units to be accommodated. In particular, the spacing 1 between the side walls of the main body 10 of the housing depends on the dimensions of the carrier 12.
[発明が解決しようとする課題]
しかしながら高周波増幅器の使用周波数が高くなり波長
が非常に短くなると、筺体の本体10の凹部における側
壁の間隔や凹部深さが、使用周波数信号の波長に対して
相対的に短くなり、導波管モードの伝播や共振か起こり
、高周波増幅器として正常に動作しなくなるという問題
があった。[Problems to be Solved by the Invention] However, as the operating frequency of a high-frequency amplifier increases and the wavelength becomes extremely short, the spacing between the side walls and the depth of the recess in the recess of the main body 10 of the housing become relative to the wavelength of the operating frequency signal. This causes problems such as propagation of the waveguide mode and resonance, causing the device to malfunction as a high-frequency amplifier.
本発明は上記事情を考慮してなされたもので、導波管モ
ードの伝播や共振が起こることなく高周波増幅回路を正
常に動作させることかできる高周波増幅器用筺体を提供
することを目的とする。The present invention has been made in consideration of the above circumstances, and it is an object of the present invention to provide a high frequency amplifier housing that allows a high frequency amplifier circuit to operate normally without propagation of waveguide mode or resonance.
[課題を解決するための手段]
上記目的は、高周波増幅回路が底部に載置される凹部が
形成され、相対する側壁に前記高周波増幅回路の入力端
子及び出力端子が設けられた導電性の本体と、前記本体
の凹部の開口を密封して前記高周波増幅回路上に空洞部
を形成する導電性の蓋体とを有する高周波増幅器用筺体
において、前記蓋体に、前記入力端子と出力端子を結ぶ
方向に垂直な方向の前記空洞部の長さが前記高周波増幅
回路の最高使用周波数信号の波長の2分の1以下になる
ような凸部を形成したことを特徴とする高周波増幅器用
筺体によって達成される。[Means for Solving the Problems] The above object is to provide a conductive main body in which a recessed portion in which a high frequency amplification circuit is placed is formed at the bottom, and an input terminal and an output terminal of the high frequency amplification circuit are provided on opposing side walls. and a conductive lid that seals the opening of the recess of the main body to form a cavity above the high frequency amplifier circuit, wherein the input terminal and the output terminal are connected to the lid. Achieved by a high frequency amplifier housing characterized in that a convex portion is formed such that the length of the hollow portion in the direction perpendicular to the direction is one-half or less of the wavelength of the highest frequency signal used by the high frequency amplifier circuit. be done.
[作用]
本発明によれば、蓋体に凸部を設けて、入力端子と出力
端子を結ぶ方向に垂直な方向の空洞部の長さを使用周波
数信号の波長の2分の1以下にしたので、導波管モード
の伝播や共振が起こることなく高周波増幅回路を正常に
動作させることができる。[Function] According to the present invention, the convex portion is provided on the lid body so that the length of the hollow portion in the direction perpendicular to the direction in which the input terminal and the output terminal are connected is made equal to or less than half the wavelength of the frequency signal used. Therefore, the high frequency amplifier circuit can be operated normally without waveguide mode propagation or resonance occurring.
[実施例〕
本発明の一実施例による高周波増幅器用筺体を用いた高
周波増幅器を第1図に示す、同図(a)は蓋体の一部を
切り欠いた状態の平面図、同図(b)はA−A線断面図
である。第2図に示す従来の高周波増幅器を同一の構成
要素には同一の符号を付して説明を省略する。[Embodiment] A high-frequency amplifier using a high-frequency amplifier housing according to an embodiment of the present invention is shown in FIG. 1. FIG. b) is a sectional view taken along line A-A. In the conventional high frequency amplifier shown in FIG. 2, the same components are given the same reference numerals and their explanations will be omitted.
本実施例では、高周波増幅器用筺体の蓋体20に金属製
の凸部20a、20bを形成し、誘電体基板14上の高
周波回路ユニット上の空洞部22の長さ1′が、使用周
波数信号の波長λの2分の1以下になるようにする。す
なわち、入力コネクタ18と出力コネクタ19を結ぶ方
向(第1図(a)における左右の方向)に垂直な方向(
第1図(b)における左右の方向)の空洞部22の長さ
f′が、蓋体20の凸部20a、20bにより画定され
て使用周波数信号の波長λの1/2以下になるようにし
ている。なお、空洞部22の長さは、本体10の深さ方
向の長さも含んでおり、この長さも波長λの1/2以下
にするように蓋体20の構造が決められている。In this embodiment, metal protrusions 20a and 20b are formed on the lid 20 of the high-frequency amplifier housing, and the length 1' of the cavity 22 on the high-frequency circuit unit on the dielectric substrate 14 corresponds to the frequency signal used. wavelength λ or less. In other words, the direction (
The length f' of the cavity 22 in the left-right direction in FIG. ing. Note that the length of the cavity 22 includes the length of the main body 10 in the depth direction, and the structure of the lid 20 is determined so that this length is also 1/2 or less of the wavelength λ.
このように本実施例によれば空洞部の長さが使用周波数
信号の波長の1/2以下であるので、導波管モードの伝
播や共振が起こることなく高周波増幅回路を正常に動作
させることができる。しかも、空洞部の長さは蓋体の凸
部により規定されるため、使用高周波信号の波長が変更
になっても蓋体の形状を変更するだけで極めて簡単に使
用高周波信号に適した高周波増幅器用筺体を実現できる
。As described above, according to this embodiment, since the length of the cavity is less than 1/2 of the wavelength of the frequency signal used, the high frequency amplifier circuit can operate normally without propagation of the waveguide mode or resonance. I can do it. Moreover, since the length of the cavity is determined by the convex part of the lid, even if the wavelength of the high-frequency signal used changes, just by changing the shape of the lid, it is extremely easy to create a high-frequency amplifier suitable for the high-frequency signal used. It is possible to realize a housing for
本発明は上記実施例に限らす種々の変形が可能である。The present invention is not limited to the above-mentioned embodiments, but various modifications are possible.
例えは、上記実緒例では5つのキャリアによりひとつの
高周波増幅器を構成したが、キャリアの数はいくつでも
よい。For example, in the above-mentioned example, one high-frequency amplifier was configured by five carriers, but the number of carriers may be any number.
[発明の効果]
以上の通り、本発明によれば、蓋体に凸部を設けて、入
力端子と出力端子を結ぶ方向に垂直な方向の空洞部の長
さを使用周波数信号の波長の2分の1以下にしたので、
導波管モードの伝播や共振が起こることなく高周波増幅
回路を正常に動作させることができる。[Effects of the Invention] As described above, according to the present invention, the convex portion is provided on the lid body, and the length of the cavity in the direction perpendicular to the direction connecting the input terminal and the output terminal is set to 2 times the wavelength of the frequency signal used. I reduced it to less than 1/2, so
The high frequency amplifier circuit can be operated normally without propagation of waveguide mode or resonance.
第1図は本発明の一実施例による高周波増幅器用筺体を
用いた高周波増幅器を示す図、第2図は従来の高周波増
幅器を示す図である。
図において、
10・・・本体
2・・・キャリア
4・・・誘電体基板
6・・・捩子
8・・・入力コネクタ
9・・・出力コネクタ
0・・・蓋体
Oa、20b・−・凸部
2・・・空洞部FIG. 1 is a diagram showing a high frequency amplifier using a high frequency amplifier housing according to an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional high frequency amplifier. In the figure, 10...Main body 2...Carrier 4...Dielectric substrate 6...Screw 8...Input connector 9...Output connector 0...Lid body Oa, 20b... Convex part 2... hollow part
Claims (1)
、相対する側壁に前記高周波増幅回路の入力端子及び出
力端子が設けられた導電性の本体と、前記本体の凹部の
開口を密封して前記高周波増幅回路上に空洞部を形成す
る導電性の蓋体とを有する高周波増幅器用筺体において
、 前記蓋体に、前記入力端子と出力端子を結ぶ方向に垂直
な方向の前記空洞部の長さが前記高周波増幅回路の最高
使用周波数信号の波長の2分の1以下になるような凸部
を形成したことを特徴とする高周波増幅器用筺体。1. A conductive main body is formed with a recess on the bottom of which a high frequency amplification circuit is placed, and an input terminal and an output terminal of the high frequency amplification circuit are provided on opposing side walls. A high frequency amplifier housing having a conductive lid that forms a cavity above a high frequency amplifier circuit, wherein the lid has a length of the cavity in a direction perpendicular to a direction connecting the input terminal and the output terminal. A casing for a high frequency amplifier, characterized in that a convex portion is formed such that the wavelength is one-half or less of the wavelength of the highest frequency signal used in the high frequency amplifier circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2160392A JPH0451601A (en) | 1990-06-19 | 1990-06-19 | Case for high frequency amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2160392A JPH0451601A (en) | 1990-06-19 | 1990-06-19 | Case for high frequency amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0451601A true JPH0451601A (en) | 1992-02-20 |
Family
ID=15713968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2160392A Pending JPH0451601A (en) | 1990-06-19 | 1990-06-19 | Case for high frequency amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0451601A (en) |
-
1990
- 1990-06-19 JP JP2160392A patent/JPH0451601A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4713634A (en) | Semiconductor device mounted in a housing having an increased cutoff frequency | |
| JP2001308660A (en) | High frequency amplifier | |
| WO2003077353A1 (en) | Waveguide/microstrip line converter | |
| JP2001185966A (en) | Microwave power amplifier | |
| JP2750389B2 (en) | Dielectric filter | |
| JPH0451601A (en) | Case for high frequency amplifier | |
| JP2002280809A5 (en) | ||
| JPH05335815A (en) | Waveguide-microstrip converter | |
| JP2001284870A (en) | High frequency shield structure | |
| JPH02156702A (en) | Package for microwave device | |
| JPS6236599U (en) | ||
| JP2788938B2 (en) | Flexible wiring board for high frequency | |
| JPH0623047Y2 (en) | Microwave circuit | |
| JPH0269002A (en) | Microwave and millimeter wave accumulating equipment | |
| JPH027201B2 (en) | ||
| JP3137721B2 (en) | High frequency circuit device | |
| JPH0496501A (en) | Microwave device | |
| JPS62122301A (en) | Microstrip board storage case | |
| JPS62159901A (en) | Mounting structure for circulator and structure of connecting waveguide | |
| JPS61177751A (en) | Microwave amplifier | |
| JP2002325001A (en) | Connecting structure of microwave device | |
| JP2000216645A (en) | Microwave equipment | |
| JPH01309501A (en) | Microwave integrated circuit device | |
| JPS63290001A (en) | Microwave integrated device | |
| JPS639201A (en) | Structure for microwave circuit |