JPH045174B2 - - Google Patents

Info

Publication number
JPH045174B2
JPH045174B2 JP13123883A JP13123883A JPH045174B2 JP H045174 B2 JPH045174 B2 JP H045174B2 JP 13123883 A JP13123883 A JP 13123883A JP 13123883 A JP13123883 A JP 13123883A JP H045174 B2 JPH045174 B2 JP H045174B2
Authority
JP
Japan
Prior art keywords
waveguide
intersection
optical
light
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13123883A
Other languages
Japanese (ja)
Other versions
JPS6022120A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58131238A priority Critical patent/JPS6022120A/en
Priority to DE8484900750T priority patent/DE3482287D1/en
Priority to PCT/JP1984/000039 priority patent/WO1984003155A1/en
Priority to US06/667,480 priority patent/US4715680A/en
Priority to EP84900750A priority patent/EP0137851B1/en
Publication of JPS6022120A publication Critical patent/JPS6022120A/en
Publication of JPH045174B2 publication Critical patent/JPH045174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/055Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic
    • G02F1/0553Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic specially adapted for gating or modulating in optical waveguides
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31Digital deflection, i.e. optical switching
    • G02F1/313Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3137Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光スイツチに関する。特に導波光を分
岐させることにより光出力をオン、オフさせる光
集積回路に適用する光スイツチに関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to optical switches. In particular, the present invention relates to an optical switch applied to an optical integrated circuit that turns on and off optical output by branching guided light.

従来例の構成とその問題点 従来この種の分岐導波路を用いた光スイツチと
して、全反射型スイツチがある。以下、図面を用
いて全反射型スイツチ等に使用される光分岐導波
路の構成とその問題点を説明する。第1図は電気
光学効果を有する基板上に構成された全反射型光
スイツチ10を示す。同図において、11と13
および12と14は互い交差する光導波路を示
す。15と16は光導波路上に設けられた電極を
示し17は光伝搬制御部を示し、上記光導波路の
交差部分上に設けられている。このような構成の
光スイツチにおいて、電極15,16に電圧を印
加することにより、電気光学効果により制御部1
7の下の光導波路部分の屈折率が小さくなる。従
つて11より入射した導波光は電極15,16に
電圧が印加されている場合、制御部17部分で全
反射条件を満たし、14へ伝搬することになる。
なお、電圧が印加されていない場合、11より入
射した導波光は、制御部17の部分を直進し導波
路13へ伝搬される。導波路12より入射した導
波光についても同様に導波路13,14へスイツ
チされる。光スイツチの集積化を行う場合、電圧
オフの時の光出力側の導波路13,14の光出力
の強度比すなわち分岐比、ならびに光出力側の特
定の導波路13あるいは14における電圧のオン
オフによる光出力の強度比すなわち消光比の特性
が重要である。
Conventional Structure and Problems There is a total internal reflection switch as a conventional optical switch using this type of branching waveguide. The configuration of an optical branching waveguide used in a total reflection type switch and the like and its problems will be explained below with reference to the drawings. FIG. 1 shows a total internal reflection type optical switch 10 constructed on a substrate having an electro-optic effect. In the same figure, 11 and 13
and 12 and 14 indicate optical waveguides that intersect with each other. Reference numerals 15 and 16 indicate electrodes provided on the optical waveguide, and 17 indicates a light propagation control section, which is provided on the intersection of the optical waveguides. In the optical switch having such a configuration, by applying a voltage to the electrodes 15 and 16, the control unit 1 is controlled by the electro-optic effect.
The refractive index of the optical waveguide portion below 7 becomes small. Therefore, when a voltage is applied to the electrodes 15 and 16, the guided light incident from 11 satisfies the total reflection condition at the control section 17 and propagates to 14.
Note that when no voltage is applied, the guided light incident from 11 travels straight through the control section 17 and is propagated to the waveguide 13. The guided light incident from the waveguide 12 is also switched to the waveguides 13 and 14 in the same way. When integrating optical switches, the intensity ratio of the optical outputs of the waveguides 13 and 14 on the optical output side when the voltage is off, that is, the branching ratio, and the voltage on/off of a specific waveguide 13 or 14 on the optical output side are determined. The characteristic of the intensity ratio of light output, that is, the extinction ratio, is important.

このような従来の光スイツチにおいては以下に
示す欠点もしくは問題点があつた。すなわち、電
気光学効果による屈折率変化が小さいため、導波
路11と12の交差角は小さく、導波路11より
入射し、導波路13へ伝搬する導波光は導波路1
4へも伝搬することがあり、10dB以上の分岐比
ならびに消光比を得ることが非常に困難であつ
た。このため、充分なスイツチング特性を得るこ
とが困難であり実用上問題があつた。
Such conventional optical switches have the following drawbacks or problems. That is, since the change in refractive index due to the electro-optic effect is small, the intersection angle between waveguides 11 and 12 is small, and the guided light that enters from waveguide 11 and propagates to waveguide 13 passes through waveguide 1.
4, and it was extremely difficult to obtain a branching ratio and extinction ratio of 10 dB or more. For this reason, it was difficult to obtain sufficient switching characteristics, posing a practical problem.

又、この点を改善するために第2図に示す構成
が用いられている。この構造は同図において、交
差部の近傍において導波路の線路幅を放物線状に
増加させ連結させた放物線状導波路111,12
1,141,151を設けている。この構成で
は、理論的にモードの交換量が少なく、例えば
TEooモードであれば、11から伝搬した光は
TEooモードのまま直進し、導波路141へ漏洩
することなく151から13へと伝搬するとされ
ている。
Further, in order to improve this point, the configuration shown in FIG. 2 is used. This structure is shown in the figure as parabolic waveguides 111 and 12 in which the line width of the waveguides is increased parabolically near the intersection and connected.
1,141,151 are provided. In this configuration, the amount of mode exchange is theoretically small, e.g.
In TEoo mode, the light propagated from 11 is
It is said that the light travels straight in the TEoo mode and propagates from 151 to 13 without leaking to the waveguide 141.

しかしながら、この構造では放物線状導波路の
線路幅に、伝搬モードを変化させない形状条件が
存在している。すなわち、 W2=(2αλp/nb)Z+Wp 2 である。
However, in this structure, there is a shape condition in the line width of the parabolic waveguide that does not change the propagation mode. That is, W 2 =(2αλ p /nb)Z+W p 2 .

ここで、λo:光の波長、nb:光導波路のバル
クの屈折率、Z:定幅導波路からの距離(第2図
参照)、W:放物線状導波路の幅、Wp:定幅導波
路の幅。
Here, λo: wavelength of light, nb: bulk refractive index of the optical waveguide, Z: distance from the constant-width waveguide (see Figure 2), W: width of the parabolic waveguide, W p : constant-width waveguide. Wave width.

上記の式から、αが大となるほど、導波路幅は
交差部に向かつて急激に広がることがわかる。従
つて、漏洩の抑制効果が十分に得られるよう導波
路幅を十分に広がらせ、しかも小型化のために放
物線状部分をできるだけ短く抑えるには、αを大
きくして、導波路幅をできるだけ急激に広がらせ
れば良い。
From the above equation, it can be seen that as α becomes larger, the waveguide width increases rapidly toward the intersection. Therefore, in order to widen the waveguide width sufficiently to obtain a sufficient leakage suppression effect and to keep the parabolic portion as short as possible for miniaturization, α should be increased and the waveguide width should be made as steep as possible. It would be good if it spread to.

しかしながら、αが大となるほど、放物線状導
波路と定幅導波路との接続部は急激な変化点とな
る。そのため、導波路形状の加工の精度が導波路
幅の精度に与える影響が大きい。精度が低いと上
記の式で表わされる形状条件が満足されず、伝搬
モードの変換を生じる。例えばTE00モード光の
場合、その一部が主としてTE01モードに変換さ
れる。TE01モードは導波路14で減衰する割合
がTE00モードに比較して高いため、分岐比が劣
化するという問題を生じる。
However, as α becomes larger, the connection between the parabolic waveguide and the constant width waveguide becomes a point of sudden change. Therefore, the accuracy of processing the waveguide shape has a large influence on the accuracy of the waveguide width. If the accuracy is low, the shape condition expressed by the above equation will not be satisfied, resulting in conversion of the propagation mode. For example, in the case of TE 00 mode light, a part of it is mainly converted to TE 01 mode. Since the TE 01 mode is attenuated at a higher rate in the waveguide 14 than the TE 00 mode, a problem arises in that the branching ratio deteriorates.

一方、αを小さくとれば導波路幅の交差部に向
かつての変化は緩やかであり、加工の精度が導波
路幅に与える影響は小さいが、導波路幅を十分に
広がらせるためには放物線状部分を長くとる必要
がある。例えば、加工の精度に実用的な余裕をも
たせるためにα0.5とした場合には、素子寸法
が10mm以上となり、集積化には適さない。
On the other hand, if α is set small, the change in the waveguide width toward the intersection will be gradual, and the influence of processing accuracy on the waveguide width will be small. You need to make the pieces longer. For example, if α is set to 0.5 in order to provide a practical margin for processing accuracy, the element size will be 10 mm or more, which is not suitable for integration.

以上のように、非常に高い精度の加工を行なわ
なければ、小型で分岐比及び消光比が10dB以上
という特性を確保することができず、歩留り良く
素子を製造することは困難であつた。
As described above, unless extremely high-precision processing is performed, it is not possible to ensure the characteristics of a small size and a branching ratio and extinction ratio of 10 dB or more, and it is difficult to manufacture an element with a high yield.

本発明者らは、光分岐導波路を工夫することに
より、分岐特性を大幅に改善でき、かつ歩留りよ
く形成できる構造を見い出し、スイツチング特性
の優れた光スイツチを実現できることを見い出し
た。
The present inventors have discovered that by devising an optical branching waveguide, a structure that can significantly improve the branching characteristics and can be formed at a high yield has been realized, and an optical switch with excellent switching characteristics can be realized.

発明の目的 本発明は、上記従来例の有していた欠点もしく
は問題点を除去した分岐特性の良好な光スイツチ
を提供することを目的とする。
OBJECTS OF THE INVENTION An object of the present invention is to provide an optical switch with good branching characteristics that eliminates the drawbacks and problems of the above-mentioned conventional examples.

発明の構成 本発明は、導波路の近傍における導波路の線路
幅を交差部中心に向かつて増加させ、かつ滑らか
に接続させ、上記交差部近傍の外周線を双曲線状
としたものである。
Structure of the Invention In the present invention, the line width of the waveguide in the vicinity of the waveguide is increased toward the center of the intersection, and the lines are connected smoothly, and the outer circumferential line in the vicinity of the intersection is made hyperbolic.

実施例の説明 以下本発明を、図を用いて説明する。Description of examples The present invention will be explained below using the drawings.

第3図は本発明にかかる光スイツチの構造を示
す。同図において、本発明にかかる光スイツチ
は、基板の表面31に形成した互いに交差する光
導波路321と322および331と332と、
上記交差部34の表面に設けられた光の伝搬通路
を選択させる制御電極351と352とから構成
されたもので、さらに導波路の交差部34の近傍
における導波路3211,3221,3311,
3321の線路幅を交差部34の中心に向つて増
加させ、かつ滑らかに接続させ、交差部近傍の導
波路の外周線36を双曲線状としている。
FIG. 3 shows the structure of an optical switch according to the present invention. In the figure, the optical switch according to the present invention includes optical waveguides 321 and 322 and 331 and 332 that are formed on the surface 31 of the substrate and intersect with each other.
It is composed of control electrodes 351 and 352 provided on the surface of the intersection 34 to select the propagation path of light, and further includes waveguides 3211, 3221, 3311 in the vicinity of the intersection 34 of the waveguides,
The line width of 3321 is increased toward the center of the intersection 34 and connected smoothly, and the outer circumferential line 36 of the waveguide near the intersection is made hyperbolic.

従来、このような構成では導波光の自然拡がり
を制限することは無いと考えられ、したがつて分
岐比を充分得ることはできないと考えられてい
た。又、従来例で示したように、たとえば、導波
路321の導波光l1は導波路322に主として伝
搬される。しかし光の自然広がりにより一部導波
路に漏洩し光出力側の分岐比が十分に得られな
い。
Conventionally, it has been thought that such a configuration does not limit the natural spread of guided light, and therefore it is not possible to obtain a sufficient branching ratio. Further, as shown in the conventional example, the guided light l 1 of the waveguide 321 is mainly propagated to the waveguide 322, for example. However, due to the natural spread of light, some of the light leaks into the waveguide, making it impossible to obtain a sufficient branching ratio on the light output side.

しかし、本発明者らは、本発明にかかる構造に
おいても導波光l1は、交差部の通過のさいにも導
波路332に漏洩することなく、そのまま直進し
導波路322に導波することを見出し、新規の光
スイツチを発明した。
However, the present inventors have discovered that even in the structure according to the present invention, the guided light l 1 does not leak into the waveguide 332 even when passing through an intersection, and continues straight as it is and is guided to the waveguide 322. Headline: Invented a new light switch.

本発明にかかる構造を詳細に検討した結果、導
波路幅に最適の範囲のあることを見い出した。す
なわち、導波路幅5〜30μmが最適である。5μm
以下では導波光の交差路内で自然拡がりが大き
く、良好な分岐比を得ることが出来なかつた。
又、30μm以上では、交差路寸法が大きくなり
小型化が困難で集積化には適さない。又、導波路
の交差角も1〜5°を含む範囲内が最適であつた。
1°未満では導波光の自然拡りによる漏洩が生じて
いたと考えられる。5°以上では交差路形状に工夫
を加えなくとも分岐比が良好で20dB以上が容易
に得られ、本発明の意義がない。さらに、この場
合、交差路寸法L1を3mm以下とし上記構成で光
スイツチを作成すると、導波路幅を双曲線状に加
工するだけで、15dB以上の分岐比を得ることが
出来た。したがつて、この種の構成の光スイツチ
では、従来のものに比べ寸法公差に余裕を持ちつ
つ小型で、しかも分岐比特性に優れ、故に消光比
の良好な素子を形成することが出来た。
As a result of a detailed study of the structure according to the present invention, it was found that there is an optimum range for the waveguide width. That is, a waveguide width of 5 to 30 μm is optimal. 5μm
In the following, the guided light had a large natural spread within the cross-path, and it was not possible to obtain a good branching ratio.
Moreover, if it is 30 μm or more, the cross-path size becomes large, making it difficult to downsize and not suitable for integration. Furthermore, the optimum crossing angle of the waveguides was within a range of 1 to 5 degrees.
At less than 1°, leakage is thought to have occurred due to the natural expansion of the guided light. If it is 5° or more, the branching ratio is good and 20 dB or more can be easily obtained without any modification to the crossroad shape, and the present invention has no meaning. Furthermore, in this case, when an optical switch was created with the above configuration with the cross-path dimension L 1 of 3 mm or less, a branching ratio of 15 dB or more could be obtained simply by processing the waveguide width into a hyperbolic shape. Therefore, in an optical switch having this type of structure, it is possible to form an element that is smaller in size with more dimensional tolerance than conventional ones, has excellent branching ratio characteristics, and therefore has a good extinction ratio.

本発明の動作原理の詳細は明確でない。上記の
結果から推定すると、導波光を交差部に伝搬させ
た場合交差部の外周線を双曲線状に構成している
ので導波光は準静的に導波路の広がりに応じて広
がり伝搬する。したがつて、伝搬モードは保存さ
れると推定される。さらに交差部に伝搬した導波
光は交差部中央部での導波路幅が10〜40μmと狭
いので光の自然広がりが少なく、したがつて漏洩
が少なく導波すると考えられる。次に光出力側に
おいては、入力側の伝搬と同じく導波路幅が準静
的に狭小に変化しているので伝搬モードが保存さ
れるものと考えられる。このため良好な分岐比が
得られ、したがつて光出力側の導波路のいずれに
おいても良好な消光比が得られたと推定される。
The details of the operating principle of the invention are not clear. Estimating from the above results, when the guided light is propagated through the intersection, the guided light spreads and propagates quasi-statically in accordance with the width of the waveguide because the outer periphery of the intersection is configured in a hyperbolic shape. Therefore, it is assumed that the propagation mode is preserved. Furthermore, the guided light propagated to the intersection has a narrow waveguide width of 10 to 40 μm at the center of the intersection, so the natural spread of the light is small, and therefore it is considered that the waveguide is guided with little leakage. Next, on the optical output side, the waveguide width changes quasi-statically to become narrower, similar to the propagation on the input side, so it is thought that the propagation mode is preserved. Therefore, it is presumed that a good branching ratio was obtained, and therefore a good extinction ratio was obtained in both of the waveguides on the optical output side.

なお、導波路幅を交差部に向かつて十分に広が
らせ、かつ入射側と出射側の外周線を滑らかに接
続するために要する距離は、双曲線の場合はその
性質により、第2図の従来例の放物線の場合に比
べて短くてよいため、素子の小型化が可能とな
る。
Note that the distance required to sufficiently widen the waveguide width toward the intersection and to smoothly connect the outer circumferential lines of the input side and the output side is the conventional example shown in Fig. 2, depending on the nature of the hyperbola. Since it can be shorter than the case of a parabola, it is possible to miniaturize the element.

以下本発明の内容をよりよく理解できるように
具体的な実施例をあけて説明する。
Hereinafter, specific examples will be explained so that the content of the present invention can be better understood.

実施例 1 本発明の実施例を第3図により具体的に説明す
る。例えば、基板の表面31をα−Al2O3とし、
電気光学効果の大きい材料として知られるPLZT
(28/0/100)薄膜を例えば、スパツタ、マグネ
トロンスパツタ、イオンビームスパツタで、基板
温度550〜650℃で蒸着すると、(111)面エピタキ
シヤル単結晶膜が形成され、光伝搬損失が3dB/
cmのものが得らえる。例えば、形成された膜厚
0.3μmのPLZT薄膜上に第3図に示す構造を通常
の半導体プロセスに使用されるフオトリソ技術を
使用し、形成する。例えば、フオトリソ技術のう
ちリフト法を用い、ネガパターン形成されたAZ
レジスト上に膜厚0.2μmのTa2O5膜を例えばマグ
ネトロンスパツタで蒸着し、アセトンでAZレジ
ストを除去することにより、ロード装置型光導波
路が形成できる。この構造において、光はTa2O5
膜下に閉じ込められて伝搬する。交差部近傍での
構造は、例えば第3図に示すように光導波路の線
幅W1を4μm、交差角θ1=2°での場合、交差部中
央での幅W2を40μmとして、交差部近傍の長さL1
の長さ2mmの間で徐々に線幅を広げ、又交差部中
心から徐々に線幅を狭くし、かつ滑らかに接続さ
せる構造とする。
Example 1 An example of the present invention will be explained in detail with reference to FIG. For example, the surface 31 of the substrate is α-Al 2 O 3 ,
PLZT is known as a material with large electro-optic effect.
(28/0/100) When a thin film is deposited using, for example, sputtering, magnetron sputtering, or ion beam sputtering at a substrate temperature of 550 to 650°C, a (111) plane epitaxial single crystal film is formed and light propagation loss is reduced. 3dB/
You can get one in cm. For example, the thickness of the formed film
The structure shown in FIG. 3 is formed on a 0.3 μm PLZT thin film using photolithography technology used in normal semiconductor processes. For example, an AZ with a negative pattern formed using the lift method of photolithography technology.
A load device type optical waveguide can be formed by depositing a Ta 2 O 5 film with a thickness of 0.2 μm on the resist using, for example, magnetron sputtering and removing the AZ resist with acetone. In this structure, the light is Ta 2 O 5
It is trapped under the membrane and propagates. The structure near the intersection is, for example, as shown in Figure 3, when the line width W 1 of the optical waveguide is 4 μm and the intersection angle θ 1 = 2°, the width W 2 at the center of the intersection is 40 μm. Length near the part L 1
The line width is gradually widened within the length of 2 mm, and the line width is gradually narrowed from the center of the intersection, and the connection is made smoothly.

以上の構成にすると、例えば光導波路321の
伝搬光は16dBの分岐比の得られることを確認し
た。
With the above configuration, it has been confirmed that, for example, the light propagating through the optical waveguide 321 can have a branching ratio of 16 dB.

特にこのような構造ではTi−拡散型Li−NbO3
光導波路より光導波路と周辺部の屈折率の差が大
きいので、第2図の構成の精度はかなり要求され
る。しかし、本発明の構成においてはそのような
必要は少なく信頼性よく形成することができるこ
とを本発明者らは確認した。
Especially in such a structure, Ti-diffused Li-NbO 3
Since the difference in refractive index between the optical waveguide and the peripheral portion is larger than that of the optical waveguide, the configuration shown in FIG. 2 requires considerable accuracy. However, the present inventors have confirmed that in the configuration of the present invention, such a need is small and can be formed with high reliability.

本構造において、基板の表面はMgO、スピネ
ル、SiTiO3のうち少なくとも一種であれば、
BaTiO3、PbTiO3、PLZT系化合物を例えばスパ
ツタ法で形成し、本構成を形成すれば分岐比の良
好な交差導波路を形成することができる。
In this structure, if the surface of the substrate is at least one of MgO, spinel, and SiTiO3 ,
If BaTiO 3 , PbTiO 3 , or PLZT-based compounds are formed by, for example, a sputtering method to form this configuration, a crossed waveguide with a good branching ratio can be formed.

この交差導波路上に厚さ0.1μm、空隙2〜6μm
の制御電極351と352を、例えば蒸着Alで
形成すると光スイツチが形成でき、消光比20dB
の光スイツチング動作を確認した。
A thickness of 0.1 μm and a gap of 2 to 6 μm are formed on this crossed waveguide.
If the control electrodes 351 and 352 are made of evaporated Al, for example, an optical switch can be formed, and the extinction ratio is 20 dB.
The optical switching operation was confirmed.

実施例 2 本構造の光スイツチにおいて、基板の表面31
をLiTaO3とし、0.5μmのLiNbO3を例えばマグネ
トロンスパツタで蒸着すると、LiNbO3層を光2
導波路とすることができ、LiNbO3層をイオンシ
リングでエツチングを施こすことにより膜厚に差
を設けると膜厚の厚い領域に光波が閉じ込めら
れ、いわゆるリツジ型導波路が形成される。この
場合、交差する2本のリツジ型導波路の交差部を
本発明の構成とすると、分岐比15dBであり、電
極のオン、オフによるスイツチングの消光比
18dBを得ることができた。
Example 2 In the optical switch of this structure, the surface 31 of the substrate
is LiTaO 3 and 0.5 μm LiNbO 3 is deposited using, for example, magnetron sputtering, the LiNbO 3 layer is exposed to light 2.
It can be used as a waveguide, and when the three LiNbO layers are etched using ion silling to create a difference in film thickness, light waves are confined in the thicker region, forming a so-called ridge-type waveguide. In this case, if the intersection of two intersecting ridge-type waveguides is configured according to the present invention, the branching ratio is 15 dB, and the extinction ratio of switching due to turning on and off of the electrodes is 15 dB.
I was able to get 18dB.

又、本発明の構成は、基板の表面をBGO
(Bi12GeO20)で構成し、光導波路をBTO
(Bi12TiO20)あるいはBSO(Bi12SiO20)でも同等
の効果が得られる。さらに、基板の表面をα−
Al2O3で構成し、光導波路をZnO、ZnS、CdS、
ZnSe、ZnTeで構成してもよい。あるいは、基板
の表面を半導体のGaPで構成し、光導波路を
GaAsなどの化合物で構成した場合も同等の効果
の得られることを本発明者らは確認した。
Furthermore, the structure of the present invention is such that the surface of the substrate is covered with BGO.
(Bi 12 GeO 20 ), and the optical waveguide is made of BTO
(Bi 12 TiO 20 ) or BSO (Bi 12 SiO 20 ) can also provide the same effect. Furthermore, the surface of the substrate is
Composed of Al 2 O 3 , the optical waveguide is made of ZnO, ZnS, CdS,
It may also be composed of ZnSe or ZnTe. Alternatively, the surface of the substrate may be made of semiconductor GaP and an optical waveguide may be formed.
The present inventors have confirmed that the same effect can be obtained when the structure is made of a compound such as GaAs.

なお、本発明の効果は本発明の構造において、
光導波路は電気光学効果の大きい材料であればよ
く、上記の材料に限定されるものでない。
In addition, the effect of the present invention is achieved by the structure of the present invention,
The optical waveguide may be made of any material that has a large electro-optic effect, and is not limited to the above-mentioned materials.

発明の効果 以上のように、本発明は電気光学効果の大きい
材料で形成される光スイツチの交差部の構造変化
を緩やかにした構成であり、伝搬光が他の導波路
に漏洩することが少なく伝搬するので分岐比が良
好となる効果がある。このため、この構成の光ス
イツチではオン−オフ時の消光比が良好となる。
したがつて、本発明の光スイツチを用いると小型
であり且つ伝搬光の漏洩が少なく、スイツチング
特性の優れた光スイツチが実現できるものであ
る。したがつて、集積化を計ることが可能で、光
IC化の可能性が大であり、光エレクトロニクス
に与える寄与は大きいものである。
Effects of the Invention As described above, the present invention has a configuration in which the structural change at the intersection of an optical switch made of a material with a large electro-optic effect is made gentle, and propagating light is less likely to leak into other waveguides. Since it propagates, it has the effect of improving the branching ratio. Therefore, the optical switch with this configuration has a good extinction ratio during on-off.
Therefore, by using the optical switch of the present invention, it is possible to realize an optical switch that is small in size, has little leakage of propagating light, and has excellent switching characteristics. Therefore, it is possible to integrate optical
There is great potential for IC development, and the contribution it will make to optoelectronics will be significant.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の全反射型光スイツチの要部平面
図、第2図は従来の他の全反射型光スイツチの要
部平面図、第3図は本発明の光スイツチの一実施
例の概略平面図である。 31……基板表面、32,33……光導波路、
321,322,331,332……光導波路、
34……交差部、351,352……制御電極、
3211,3221,3311,3321……光
導波路。
Fig. 1 is a plan view of the main part of a conventional total reflection type optical switch, Fig. 2 is a plan view of the main part of another conventional total reflection type optical switch, and Fig. 3 is an embodiment of the optical switch of the present invention. FIG. 31... Substrate surface, 32, 33... Optical waveguide,
321, 322, 331, 332... optical waveguide,
34... Intersection, 351, 352... Control electrode,
3211, 3221, 3311, 3321... optical waveguide.

Claims (1)

【特許請求の範囲】[Claims] 1 基板の表面に互いに交差する導波路を設け、
上記交差部の表面に光伝搬路を選択させる制御電
極を設け、上記交差部の近傍における導波路の線
路幅を交差部中心に向かつて増加させ、かつ滑ら
かに接続させるとともに、上記交差部の近傍以外
の定幅部分における線路幅を、5〜30μmとし、
上記交差部近傍の導波路の外周線を双曲線状に
し、その交差角を1〜5°としたことを特徴とする
光スイツチ。
1. Providing waveguides that cross each other on the surface of the substrate,
A control electrode for selecting a light propagation path is provided on the surface of the intersection, and the line width of the waveguide in the vicinity of the intersection increases toward the center of the intersection, and the connection is made smoothly. The line width in the constant width part other than 5 to 30 μm,
An optical switch characterized in that the outer periphery of the waveguide near the intersection has a hyperbolic shape, and the intersection angle is 1 to 5 degrees.
JP58131238A 1983-02-10 1983-07-18 light switch Granted JPS6022120A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58131238A JPS6022120A (en) 1983-07-18 1983-07-18 light switch
DE8484900750T DE3482287D1 (en) 1983-02-10 1984-02-10 OPTICAL SWITCH.
PCT/JP1984/000039 WO1984003155A1 (en) 1983-02-10 1984-02-10 Optical switch
US06/667,480 US4715680A (en) 1983-02-10 1984-02-10 Optical switch
EP84900750A EP0137851B1 (en) 1983-02-10 1984-02-10 Optical switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58131238A JPS6022120A (en) 1983-07-18 1983-07-18 light switch

Publications (2)

Publication Number Publication Date
JPS6022120A JPS6022120A (en) 1985-02-04
JPH045174B2 true JPH045174B2 (en) 1992-01-30

Family

ID=15053232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58131238A Granted JPS6022120A (en) 1983-02-10 1983-07-18 light switch

Country Status (1)

Country Link
JP (1) JPS6022120A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016326A1 (en) 2008-08-08 2010-02-11 ステラケミファ株式会社 Process for producing fluoride gas

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6290395A (en) * 1985-06-24 1987-04-24 ニッタ株式会社 Filter paper and its production
JP2553583B2 (en) * 1987-09-02 1996-11-13 三菱電機株式会社 Bent waveguide for optical integrated circuit
US7003187B2 (en) 2000-08-07 2006-02-21 Rosemount Inc. Optical switch with moveable holographic optical element
US6810176B2 (en) 2000-08-07 2004-10-26 Rosemount Inc. Integrated transparent substrate and diffractive optical element
US6987901B2 (en) 2002-03-01 2006-01-17 Rosemount, Inc. Optical switch with 3D waveguides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016326A1 (en) 2008-08-08 2010-02-11 ステラケミファ株式会社 Process for producing fluoride gas

Also Published As

Publication number Publication date
JPS6022120A (en) 1985-02-04

Similar Documents

Publication Publication Date Title
US7095926B2 (en) Optical device
US4130342A (en) Passive optical channel crossover, switch and bend structure
US4866406A (en) Wide-band optical modulator
US5790719A (en) Optical control device
WO1984003155A1 (en) Optical switch
JPH08166565A (en) Optical control device
JPH045174B2 (en)
CN114730105A (en) Optical modulator
JPS5987B2 (en) Electro-optical switches and modulators
JPH0375847B2 (en)
JP2940141B2 (en) Waveguide type optical control device
JPH0447805B2 (en)
JPH0425524B2 (en)
JPH05297332A (en) Optical modulator
US4199221A (en) Electro-optic thin-film waveguide modulator device
JPS59185311A (en) Light control type optical switch
JPS59214020A (en) light switch
JPS58173704A (en) Optical focusing device
JP2613942B2 (en) Waveguide type optical device
JPS61231522A (en) Optical control type optical switch device
JPH0361932B2 (en)
JPS63221306A (en) Light guide type optical control device
JPH05249419A (en) Optical waveguide type optical device
Chen et al. Integrated optical beam splitters formed in glass channel waveguides having variable weighting as determined by mask dimensions
JPH06250131A (en) Light control element