JPH045259B2 - - Google Patents
Info
- Publication number
- JPH045259B2 JPH045259B2 JP60001170A JP117085A JPH045259B2 JP H045259 B2 JPH045259 B2 JP H045259B2 JP 60001170 A JP60001170 A JP 60001170A JP 117085 A JP117085 A JP 117085A JP H045259 B2 JPH045259 B2 JP H045259B2
- Authority
- JP
- Japan
- Prior art keywords
- waste liquid
- exhaust
- development processing
- section
- piping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子製造工程の一環であるフオ
トリソグラフイ工程の半導体基板現像処理装置に
関し、特にその廃液系が自己回収型ではなく、工
場一括廃液型である半導体基板現像処理装置に関
するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor substrate development processing apparatus for a photolithography process, which is a part of the semiconductor device manufacturing process, and in particular, the waste liquid system is not a self-recovery type, but a factory-wide system. The present invention relates to a waste liquid type semiconductor substrate development processing apparatus.
近年、半導体素子製造工程のフオトリソグラフ
イ工程では微細加工化が進むにつれ、ポジTYPE
のフオトレジストの使用が増大し、その現像処理
装置から発生する現像液、リンス液、水等の廃液
は、その発生量及び廃液の性質上、その装置の自
己回収型ではなく、工場側の施設である廃液系配
管に直接、接続されている場合が多い。
In recent years, as microfabrication has progressed in the photolithography process of semiconductor device manufacturing, positive type
As the use of photoresists increases, the waste liquids such as developer, rinse liquid, and water generated from the processing equipment are not collected by the equipment themselves due to the amount generated and the nature of the waste liquids, but are collected at facilities at the factory. In many cases, it is directly connected to the waste liquid piping.
従来技術の蓄積より良好な現像処理状態を得る
為の要因として、現像処理部の適正な排気量調整
及び現像液の温度、散布状態の適正な調整及びリ
ンス液量の適正な調整及び各処理時間の適正な設
定等が必要であることは周知となつている。
As a factor to obtain a better development processing condition than the accumulation of conventional technology, it is necessary to properly adjust the exhaust volume of the development processing section, the temperature of the developer, the spraying state, the amount of rinsing liquid, and each processing time. It is well known that appropriate settings, etc., are necessary.
しかしながら、前述した従来の半導体基板現像
処理装置は、その現像処理部の廃液系配管が直
接、工場側の廃液系配管に接続され、その中間に
排気配管を接続する。又は、現像処理部に直接、
排気配管を接続する等の手段により排気を接続し
ており、廃液系からの排気量に対する影響を除去
することは不可能であり、現像処理部の適正な排
気量調整は困難であつた。 However, in the conventional semiconductor substrate processing apparatus described above, the waste liquid pipe of the development processing section is directly connected to the waste liquid pipe of the factory side, and the exhaust pipe is connected in the middle thereof. Or directly to the development processing section,
Since the exhaust is connected by means such as connecting exhaust piping, it is impossible to eliminate the influence on the exhaust volume from the waste liquid system, and it has been difficult to appropriately adjust the exhaust volume of the developing processing section.
さらに、工場側廃液系配管を介し、他装置によ
る廃液の雰囲気が逆流し現像処理に悪影響を与え
る場合がある。 Furthermore, the atmosphere of waste liquid from other devices may flow back through the factory side waste liquid system piping and adversely affect the development process.
本発明による現像処理装置は、現像処理部から
の廃液系配管にＵ字型廃液トラツプ部を設け、前
記Ｕ字型廃液トラツプ部と前記現像処理部の間の
配管のみに、排気トラツプ部を介し、排気ダンパ
ーを有する排気系配管を備えたものである。
In the development processing apparatus according to the present invention, a U-shaped waste liquid trap section is provided in the waste liquid system piping from the development processing section, and an exhaust trap section is provided only in the piping between the U-shaped waste liquid trap section and the development processing section. , equipped with exhaust system piping having an exhaust damper.
本発明を概略図により説明する。 The invention will be explained by means of schematic diagrams.
第１図は本発明の一実施例の概略図である。１
は現像液ノズル、リンス液ノズル、ウエハスピン
チヤツク及びそれらを囲むカツプより構成される
現像処理部であり、２は現像処理されるウエハ
で、３は１の現像処理部に接続されている廃液、
排気系配管であり、４は排気系配管に直接廃液が
吸入することを防ぐ為の排気トラツプ部であり、
５は現像処理動作に準じ現像処理部の排気量を調
整する為の自動ダンバーで、６は５の排気自動ダ
ンバーを介し、４の排気トラツプ部に接続されて
いる排気系配管であり７は８の一定量の現像処理
廃液を溜めるＵ字配管の廃液トラツプ部で９は８
の廃液トラツプ部を介し、４の排気トラツプ部に
接続されている廃液系配管である。 FIG. 1 is a schematic diagram of an embodiment of the present invention. 1
is a development processing section consisting of a developer nozzle, a rinsing solution nozzle, a wafer spin chuck, and a cup surrounding them; 2 is a wafer to be developed; 3 is a waste liquid connected to the development processing section 1;
This is the exhaust system piping, and 4 is an exhaust trap part to prevent waste liquid from being directly sucked into the exhaust system piping.
5 is an automatic damper for adjusting the exhaust amount of the development processing section according to the development processing operation, 6 is an exhaust system piping connected to the exhaust trap section 4 via the exhaust automatic damper 5, and 7 is 8. 9 is the waste liquid trap part of the U-shaped pipe that collects a certain amount of developing processing waste liquid.
This is a waste liquid pipe connected to the exhaust trap part 4 through the waste liquid trap part 4.
第１図より説明される様に、本発明による半導
体基板の現像処理装置は、常に廃液トラツプ部に
一定量の現像処理廃液が溜まつており、その廃液
により現像処理部と廃液系配管は遮断されてい
る。
As explained from FIG. 1, in the semiconductor substrate development processing apparatus according to the present invention, a certain amount of development processing waste solution is always accumulated in the waste solution trap section, and the development processing section and the waste solution piping are blocked by this waste solution. has been done.
従つて、前述した現像処理部の排気量への影響
及び廃液系配管からの雰囲気の逆流という問題を
本発明を採用することにより解消し、良好な現像
処理の条件を容易に得ることを可能とし、半導体
素子製造工程の安定化に多大な効果をもたらす。 Therefore, by adopting the present invention, the above-mentioned problems of the influence on the exhaust volume of the development processing section and the backflow of the atmosphere from the waste liquid system piping can be solved, and it is possible to easily obtain good development processing conditions. This has a great effect on stabilizing the semiconductor device manufacturing process.
第１図は本発明の一実施例の概略図である。
１……現像処理部、２……ウエハ、３……廃
液、排気系配管、４……排気トラツプ部、５……
排気自動ダンパー、６……排気系配管、７……廃
液トラツプ部、８……現像処理廃液溜まり、９…
…廃液系配管。
FIG. 1 is a schematic diagram of an embodiment of the present invention. 1... Development processing section, 2... Wafer, 3... Waste liquid, exhaust system piping, 4... Exhaust trap section, 5...
Exhaust automatic damper, 6... Exhaust system piping, 7... Waste liquid trap section, 8... Development processing waste liquid reservoir, 9...
...Waste liquid piping.
Claims (1)
液系配管にＵ字型廃液トラツプ部を設け、前記Ｕ
字型廃液トラツプ部と前記現像処理部の間の配管
に排気トラツプ部を設け、この排気トラツプ部に
排気系配管を接続し、前記Ｕ字型廃液トラツプ部
と前記排気系配管とを独立に設けたことを特徴と
する現像処理装置。1 In the development processing apparatus, a U-shaped waste liquid trap section is provided in the waste liquid system piping from the development processing section, and the U-shaped waste liquid trap section is provided.
An exhaust trap section is provided in the piping between the waste liquid trap section and the development processing section, an exhaust system piping is connected to the exhaust trap section, and the U-shaped waste liquid trap section and the exhaust system piping are provided independently. A developing processing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60001170A JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60001170A JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160933A JPS61160933A (en) | 1986-07-21 |
| JPH045259B2 true JPH045259B2 (en) | 1992-01-30 |
Family
ID=11493958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60001170A Granted JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160933A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611023B2 (en) * | 1986-12-29 | 1994-02-09 | 東京エレクトロン株式会社 | Development method |
| KR0147044B1 (en) * | 1990-01-23 | 1998-11-02 | 카자마 젠쥬 | Heat treatment apparatus having exhaust system |
| JP2002187249A (en) * | 2000-12-19 | 2002-07-02 | Think Laboratory Co Ltd | A method for making, recycling, and making plates for gravure printing |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5666044A (en) * | 1979-11-05 | 1981-06-04 | Toshiba Corp | Semiconductor device |
| JPS5850738A (en) * | 1981-09-21 | 1983-03-25 | Toshiba Corp | Apparatus for resist coating and development |
| JPS614576A (en) * | 1984-06-15 | 1986-01-10 | Hoya Corp | Spraying method |
-
1985
- 1985-01-08 JP JP60001170A patent/JPS61160933A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61160933A (en) | 1986-07-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |