JPH0452992Y2 - - Google Patents
Info
- Publication number
- JPH0452992Y2 JPH0452992Y2 JP1984184187U JP18418784U JPH0452992Y2 JP H0452992 Y2 JPH0452992 Y2 JP H0452992Y2 JP 1984184187 U JP1984184187 U JP 1984184187U JP 18418784 U JP18418784 U JP 18418784U JP H0452992 Y2 JPH0452992 Y2 JP H0452992Y2
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- ultraviolet
- main body
- ultraviolet lamp
- closed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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- Drying Of Semiconductors (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は半導体ウエハー表面に形成された有機
膜を除去するクリーニング処理若しくは有機膜を
硬化せしめるキユアリング処理等に用いる紫外線
照射処理装置に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to an ultraviolet irradiation treatment apparatus used for cleaning treatment for removing an organic film formed on the surface of a semiconductor wafer or curing treatment for curing the organic film.
（従来の技術）
LSI、超LSIを製造するには、一般に半導体ウ
エハーにキユアリング、クリーニング処理等を施
すことが必要となる。斯る処理を施すには従来か
ら紫外線を照射することが知られている。即ち、
クリーニングを施すには特に短波長側の紫外線に
よつて雰囲気ガスを解離せしめてオゾン等の活性
種を発生せしめ、この活性種により、半導体ウエ
ハー表面の有機膜を分解除去し、またキユアリン
グを施すには紫外線を有機膜に吸収せしめ、分子
内或いは分子間架橋を起こさせて硬化させるよう
にしたものである。(Prior Art) In order to manufacture LSIs and VLSIs, it is generally necessary to subject semiconductor wafers to curing, cleaning processes, and the like. It has been known that irradiation with ultraviolet rays is used to carry out such treatment. That is,
To carry out cleaning, atmospheric gases are dissociated using ultraviolet rays, especially those with short wavelengths, to generate active species such as ozone, and these active species decompose and remove the organic film on the surface of the semiconductor wafer, and also to perform curing. The organic film absorbs ultraviolet rays to cause intramolecular or intermolecular crosslinking, thereby curing the film.
（考案が解決しようとする問題点）
上述した如く紫外線照射による処理は有機膜の
除去硬化等には有効であるが、紫外線ランプを用
いて多数枚の半導体ウエハーを均一に処理するこ
とが困難で、また紫外線ランプ自体高温となるた
め寿命が短く頻繁に交換しなければならず、その
交換も面倒である。(Problems to be solved by the invention) As mentioned above, treatment by ultraviolet irradiation is effective for removing and curing organic films, but it is difficult to uniformly treat a large number of semiconductor wafers using an ultraviolet lamp. Furthermore, since the ultraviolet lamp itself becomes hot, it has a short lifespan and must be replaced frequently, which is also troublesome.
（問題点を解決するための手段）
上記問題点を解決すべく本考案に係る紫外線照
射処理装置は、半導体ウエハーに紫外線照射を施
す処理チヤンバーを収容し得る筒状本体の一部
を、左右方向に開閉自在な胴部とし、この胴部の
内側面を反射面とするとともに、胴部の内側に冷
却用透明カバーを設け、この冷却用カバー内に紫
外線ランプを配置するようにした。(Means for Solving the Problems) In order to solve the above problems, the ultraviolet irradiation processing apparatus according to the present invention has a part of the cylindrical body capable of accommodating a processing chamber for applying ultraviolet irradiation to semiconductor wafers in the left and right direction. The body has a body that can be opened and closed, the inner surface of the body is a reflective surface, a transparent cooling cover is provided inside the body, and an ultraviolet lamp is disposed inside this cooling cover.
（実施例）
以下に本考案の実施例を添付図面に基づいて説
明する。(Example) An example of the present invention will be described below based on the accompanying drawings.
第１図は本考案に係る紫外線照射処理装置の正
面図、第２図は同装置の側面図、第３図は第１図
のＡ−Ａ線断面図、第４図は同装置の内部構造を
示す正面図である。 Fig. 1 is a front view of the ultraviolet irradiation processing device according to the present invention, Fig. 2 is a side view of the same device, Fig. 3 is a sectional view taken along line A-A in Fig. 1, and Fig. 4 is the internal structure of the device. FIG.
紫外線照射処理装置はその本体１を筒状とし、
内部に合成石英からなる処理チヤンバー２を収容
し得る大きさとされている。そして、本体１の上
部３は上端を閉塞した筒状をなし、その一部には
電源につながるリード線を本体１内に導くパイプ
４を取り付けている。 The ultraviolet irradiation treatment device has a main body 1 having a cylindrical shape,
It is sized to accommodate a processing chamber 2 made of synthetic quartz inside. The upper part 3 of the main body 1 has a cylindrical shape with the upper end closed, and a pipe 4 for guiding a lead wire connected to a power source into the main body 1 is attached to a part of the upper part 3.
また本体１の下半部は左右一対の半割筒状をな
す胴部５，５にて構成されている。これら胴部
５，５には第２図に示す如くヒンジ６……が設け
られ、これらヒンジ６……は支持板７のアーム
８，８に植設したピン９，９に嵌着しており、ピ
ン９，９を中心とてし各胴部５，５は左右に開閉
自在とされる。そして各胴部５，５の突合せ端縁
部は蝶ネジ１０……を介して気密に固着される。 The lower half of the main body 1 is composed of a pair of left and right half-cylindrical body parts 5, 5. These body parts 5, 5 are provided with hinges 6, as shown in FIG. , each body 5, 5 can be opened and closed left and right around pins 9, 9. The abutting edge portions of each body portion 5, 5 are hermetically fixed via thumb screws 10.
ところで、支持板７を取り付けている基板１１
は半導体ウエハーを多数枚集合せしめたり、或い
はカセツト内へ順次搬送する装置の一部をなして
おり、したがつて、処理チヤンバー２をそのまま
残して、本体１を例えばプラズマ処理装置の本体
と交換すれば、半導体ウエハーにプラズマ処理を
施すこともできる。 By the way, the substrate 11 to which the support plate 7 is attached
is a part of a device that collects a large number of semiconductor wafers or sequentially transports them into a cassette. Therefore, it is possible to leave the processing chamber 2 as it is and replace the main body 1 with the main body of a plasma processing apparatus, for example. For example, semiconductor wafers can be subjected to plasma treatment.
一方、前記胴部５には処理チヤンバー２の外側
と胴部５の内側に形成される空間に不活性なN2
ガス等を供給するパイプ１２及び空間からN2ガ
ス等を排出するパイプ１３が接続され、また胴部
５，５の内側面は反射面とされている。また胴部
５，５の内側には周方向に等間隔で複数の縦長ボ
ツクス状のカバー１４……が設けられている。こ
のカバー１４は紫外線を透過する合成石英からな
る透明体とされ、内部には縦長チユーブ状の紫外
線ランプ１５が装着され、紫外線ランプ１５外側
とカバー１４内側間は冷却水通路となつている。
そしてカバー１４は胴部５，５に対して着脱自在
となつており、胴部５，５を開けた状態で紫外線
ランプ１５を装着したまま容易に取り外すことが
できる構造となつている。更に本体上部３の内側
には胴部５，５を閉じた際に電源と紫外線ランプ
１５とを接続するための接続部１６を設けてい
る。 On the other hand, in the body part 5, inert N 2 is added to the space formed outside the processing chamber 2 and inside the body part 5.
A pipe 12 for supplying gas and the like and a pipe 13 for discharging N 2 gas and the like from the space are connected, and the inner surfaces of the bodies 5 and 5 are reflective surfaces. Further, inside the body parts 5, 5, a plurality of vertically elongated box-shaped covers 14 are provided at equal intervals in the circumferential direction. This cover 14 is made of a transparent body made of synthetic quartz that transmits ultraviolet rays, and a vertically long tube-shaped ultraviolet lamp 15 is installed inside, and a cooling water passage is formed between the outside of the ultraviolet lamp 15 and the inside of the cover 14.
The cover 14 is detachable from the body parts 5, 5, and can be easily removed with the body parts 5, 5 open and the ultraviolet lamp 15 attached. Furthermore, a connecting portion 16 is provided inside the upper body portion 3 for connecting the power source and the ultraviolet lamp 15 when the body portions 5, 5 are closed.
また、第４図に示すように処理チヤンバー２内
には真空引き装置につながる大径の合成石英パイ
プ１７及び処理ガス源につながる小径の合成石英
パイプ１８が臨んでおり、更に処理チヤンバー２
内には下方から多数の半導体ウエハーＷ……を段
状に保持した保持枠１９が進入する構造となつて
いる。 Furthermore, as shown in FIG. 4, a large-diameter synthetic quartz pipe 17 connected to a vacuum device and a small-diameter synthetic quartz pipe 18 connected to a processing gas source face inside the processing chamber 2.
A holding frame 19 holding a large number of semiconductor wafers W in a stepped manner enters into the holding frame 19 from below.
以上において、左右の胴部５，５を閉じ本体１
内にパイプ１２を介してN2ガス等を導入し、こ
れと併行して多数のウエハーＷ……を保持した保
持枠１９を処理チヤンバー２内まで上昇せしめ、
処理チヤンバー２の下端開口を閉じ、処理チヤン
バー２内を大径の合成石英パイプ１７を用いて真
空引きするとともに、小径の合成石英パイプ１８
を介して処理チヤンバー２内にO2又はN2Ｏ等の
処理ガスを導入する。 In the above, the left and right body parts 5, 5 are closed and the main body 1
N2 gas or the like is introduced into the processing chamber 2 through the pipe 12, and at the same time, the holding frame 19 holding a large number of wafers W is raised into the processing chamber 2,
The lower end opening of the processing chamber 2 is closed, and the inside of the processing chamber 2 is evacuated using the large diameter synthetic quartz pipe 17, while the small diameter synthetic quartz pipe 18
A processing gas such as O 2 or N 2 O is introduced into the processing chamber 2 through the gas.
而る後、紫外線ランプ１５……を点灯する。す
ると、処理チヤンバー２内の処理ガスは紫外線の
照射により活性化し、半導体ウエハーＷ表面の有
機膜を分解除去する。そして、斯る処理を施すに
あたり、紫外線ランプ１５……は冷却水を満たし
たカバー１４……内に収容されているため、紫外
線ランプ１５……自体はそれ程高温とならず、ま
た処理チヤンバー２外側と本体１内側との間の空
間にはN2ガスが充填されているため、O3の発生
を抑えることができる。したがつて、装置内の配
線等の内部部品の劣化を抑えることができ、紫外
線の透過率も維持し得る。 After that, the ultraviolet lamp 15... is turned on. Then, the processing gas in the processing chamber 2 is activated by irradiation with ultraviolet rays, and the organic film on the surface of the semiconductor wafer W is decomposed and removed. When performing such processing, the ultraviolet lamp 15... is housed in the cover 14... filled with cooling water, so the ultraviolet lamp 15... itself does not reach a high temperature, and the temperature outside the processing chamber 2 is Since the space between the inside of the main body 1 and the inside of the main body 1 is filled with N 2 gas, the generation of O 3 can be suppressed. Therefore, deterioration of internal components such as wiring within the device can be suppressed, and ultraviolet ray transmittance can also be maintained.
尚、実施例にあつては、バツチタイプの装置を
示したが枚葉タイプの装置としても適用し得る。
特に枚葉タイプの装置とした場合には有機膜のキ
ユアリング処理に好適である。 In the embodiment, a batch type device is shown, but it can also be applied as a single wafer type device.
In particular, when a single wafer type device is used, it is suitable for curing treatment of organic films.
（考案の効果）
以上に説明した如く本考案に係る紫外線照射処
理装置によれば、本体内に周方向に等間隔で複数
の紫外線ランプを配し、且つ紫外線ランプを縦方
向に設けることができるため、処理チヤンバー内
に多数の半導体ウエハーを上下方向に段状に重ね
て収容した場合でも、各半導体ウエハーを均等に
処理することができる。(Effects of the invention) As explained above, according to the ultraviolet irradiation treatment apparatus according to the invention, a plurality of ultraviolet lamps can be arranged in the main body at equal intervals in the circumferential direction, and the ultraviolet lamps can be provided in the vertical direction. Therefore, even when a large number of semiconductor wafers are accommodated in the processing chamber in a vertically stacked manner, each semiconductor wafer can be processed evenly.
また、紫外線ランプは冷却水を満たした冷却用
透明カバー内に収めるようにしたため、紫外線ラ
ンプの寿命を延ばすことができ、更に該カバーは
装置本体をなす開閉自在な胴部の内側に取り付け
るようにしたため、メンテナンス性及び操作性が
大巾に向上する。 In addition, the UV lamp is housed in a transparent cooling cover filled with cooling water, which extends the life of the UV lamp.Furthermore, the cover is attached to the inside of the main body of the device, which can be opened and closed. As a result, maintainability and operability are greatly improved.
第１図は本考案に係る紫外線照射処理装置の正
面図、第２図は同装置の側面図、第３図は第１図
のＡ−Ａ線断面図、第４図は胴部を開いた状態の
同装置の正面図である。
尚、図面中１は紫外線照射処理装置本体、２は
処理チヤンバー、５は胴部、１４は冷却用透明カ
バー、１５は紫外線ランプ、Ｗは半導体ウエハー
である。
Fig. 1 is a front view of the ultraviolet irradiation treatment device according to the present invention, Fig. 2 is a side view of the same device, Fig. 3 is a sectional view taken along line A-A in Fig. 1, and Fig. 4 is an open view of the body. FIG. 3 is a front view of the same device in a state. In the drawings, 1 is the main body of the ultraviolet irradiation processing apparatus, 2 is a processing chamber, 5 is a body, 14 is a transparent cover for cooling, 15 is an ultraviolet lamp, and W is a semiconductor wafer.
Claims (1)
体の一部を構成し左右方向に開閉自在とされ内側
面を反射面とした胴部と、この胴部の内側に配設
される冷却用透明カバーとこれら冷却用透明カバ
ー内に挿入される紫外線ランプとからなることを
特徴とする紫外線照射処理装置。 A cylindrical body that accommodates a processing chamber, a body that forms part of this body and can be opened and closed in the left and right directions and whose inner surface is a reflective surface, and a transparent cooling cover disposed inside this body. and an ultraviolet lamp inserted into the transparent cooling cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984184187U JPH0452992Y2 (en) | 1984-12-04 | 1984-12-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984184187U JPH0452992Y2 (en) | 1984-12-04 | 1984-12-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6197834U JPS6197834U (en) | 1986-06-23 |
| JPH0452992Y2 true JPH0452992Y2 (en) | 1992-12-14 |
Family
ID=30741672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984184187U Expired JPH0452992Y2 (en) | 1984-12-04 | 1984-12-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0452992Y2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140574A (en) * | 1975-05-30 | 1976-12-03 | Hitachi Ltd | Method of cleaning silicon substrate plate |
| JPS5861831A (en) * | 1981-10-07 | 1983-04-13 | Toshiba Electric Equip Corp | Light irradiating device |
| JPS59124124A (en) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1984
- 1984-12-04 JP JP1984184187U patent/JPH0452992Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6197834U (en) | 1986-06-23 |
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