JPH0453112B2 - - Google Patents

Info

Publication number: JPH0453112B2
Authority: JP; Japan
Prior art keywords: electrode; substrate; gaas; thickness; layer
Prior art date: 1986-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61311757A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63166276A (ja

Inventor

Tadashi Hisamatsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-12-27

Filing date

1986-12-27

Publication date

1992-08-25

1986-12-27 Application filed by Sharp Corp filed Critical Sharp Corp

1986-12-27 Priority to JP61311757A priority Critical patent/JPS63166276A/ja

1988-07-09 Publication of JPS63166276A publication Critical patent/JPS63166276A/ja

1992-08-25 Publication of JPH0453112B2 publication Critical patent/JPH0453112B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 53
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 42
239000004065 semiconductor Substances 0.000 claims description 22
238000010438 heat treatment Methods 0.000 claims description 15
238000000034 method Methods 0.000 claims description 14
229910052710 silicon Inorganic materials 0.000 claims description 12
239000010409 thin film Substances 0.000 claims description 12
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
239000010703 silicon Substances 0.000 claims description 11
238000005275 alloying Methods 0.000 claims description 6
229910052751 metal Inorganic materials 0.000 claims description 6
239000002184 metal Substances 0.000 claims description 6
238000000151 deposition Methods 0.000 claims description 5
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 3
235000012431 wafers Nutrition 0.000 description 15
150000001875 compounds Chemical class 0.000 description 12
238000003466 welding Methods 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 6
239000006059 cover glass Substances 0.000 description 5
239000000463 material Substances 0.000 description 5
238000007740 vapor deposition Methods 0.000 description 5
239000007772 electrode material Substances 0.000 description 4
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
239000013078 crystal Substances 0.000 description 3
230000008021 deposition Effects 0.000 description 3
239000010408 film Substances 0.000 description 3
229910001297 Zn alloy Inorganic materials 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
229910052709 silver Inorganic materials 0.000 description 2
BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 2
-1 GaAs compound Chemical class 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910010977 Ti—Pd Inorganic materials 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
238000010248 power generation Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000012827 research and development Methods 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
239000004332 silver Substances 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials

Landscapes

Photovoltaic Devices (AREA)

JP61311757A 1986-12-27 1986-12-27 太陽電池素子の電極形成方法 Granted JPS63166276A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61311757A JPS63166276A (ja)	1986-12-27	1986-12-27	太陽電池素子の電極形成方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61311757A JPS63166276A (ja)	1986-12-27	1986-12-27	太陽電池素子の電極形成方法

Publications (2)

Publication Number	Publication Date
JPS63166276A JPS63166276A (ja)	1988-07-09
JPH0453112B2 true JPH0453112B2 (fr)	1992-08-25

Family

ID=18021114

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61311757A Granted JPS63166276A (ja)	1986-12-27	1986-12-27	太陽電池素子の電極形成方法

Country Status (1)

Country	Link
JP (1)	JPS63166276A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2542447B2 (ja) *	1990-04-13	1996-10-09	三菱電機株式会社	太陽電池およびその製造方法
US8187983B2 (en)	2009-04-16	2012-05-29	Micron Technology, Inc.	Methods for fabricating semiconductor components using thinning and back side laser processing

1986
- 1986-12-27 JP JP61311757A patent/JPS63166276A/ja active Granted

Also Published As

Publication number	Publication date
JPS63166276A (ja)	1988-07-09

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Legal Events

Date	Code	Title	Description
2006-08-25	LAPS	Cancellation because of no payment of annual fees