JPH045378B2 - - Google Patents

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Publication number
JPH045378B2
JPH045378B2 JP59002521A JP252184A JPH045378B2 JP H045378 B2 JPH045378 B2 JP H045378B2 JP 59002521 A JP59002521 A JP 59002521A JP 252184 A JP252184 A JP 252184A JP H045378 B2 JPH045378 B2 JP H045378B2
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JP
Japan
Prior art keywords
group
weight
ethylene glycol
parts
trihydroxybenzoate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP59002521A
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Japanese (ja)
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JPS60146234A (en
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Priority to JP59002521A priority Critical patent/JPS60146234A/en
Priority to EP85300184A priority patent/EP0148787A3/en
Publication of JPS60146234A publication Critical patent/JPS60146234A/en
Publication of JPH045378B2 publication Critical patent/JPH045378B2/ja
Granted legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

〔産業䞊の利甚分野〕 本発明は、ポゞ型感光性暹脂組成物に関し、さ
らに詳しくはアルカリ可溶性暹脂ず特定の
−キノンゞアゞド化合物ずを配合しおなる、高感
床、高解像床および高残膜率を有し、か぀珟像性
に優れ、集積回路䜜補のための耐熱性ホトレゞス
トずしお奜適なポゞ型感光性暹脂組成物に関す
る。 〔埓来の技術〕 埓来、集積回路を䜜補するためのホトレゞスト
ずしおは、環化む゜プレンゎムにビスアゞド化合
物を配合したネガ型ホトレゞストが知られおい
る。しかしこのネガ型ホトレゞストは解像床に限
界があるため、集積回路の高集積化に充分察応で
きない欠点を有する。䞀方、このネガ型ホトレゞ
ストに察し、ポゞ型ホトレゞストは、解像床が優
れおいるため、集積回路の高集積化に充分察応し
埗るものであるず考えられおいる。 珟圚、この分野で䞀般的に䜿甚されおいるポゞ
型ホトレゞストは、アルカリ可溶性暹脂に感光剀
ずしお−キノンゞアゞド化合物を配合した
ものである。 しかしながら、埓来のポゞ型ホトレゞストは、
感床、解像床、残膜率、耐熱性等の諞性胜におい
お必ずしも満足な結果は埗られおいない。 〔発明が解決しようずする課題〕 本発明の目的は、䞊蚘埓来技術の欠点を陀去
し、高感床、高解像床および高残膜率を有し、珟
像性に優れた耐熱性を有するポゞ型感光性暹脂組
成物を提䟛するこずにある。 本発明者らは、この目的を達成するために鋭意
研究した結果、アルカリ可溶性暹脂に、感光剀ず
しお特定の−キノンゞアゞド化合物を配合
するこずにより、前蚘欠点が改良されるこずを芋
出しお本発明に到達した。 〔課題を解決するための手段〕 本発明のポゞ型感光性暹脂組成物は、アルカリ
可溶性暹脂100重量郚に察しお䞀般匏 たたは䞀般匏 〔匏䞭、、およびは同䞀たたは異なり、
〜の敎数、R1、R2およびR3は同䞀たたは異な
り、氎玠原子、塩玠原子、臭玠原子等のハロゲン
原子、アルキル基、奜たしくはメチル基、゚チル
基、プロピル基等の炭玠数〜のアルキル基、
プニル基、ナフチル基等のアリヌル基、ベンゞ
ル基等のアラルキル基、アルコキシ基、奜たしく
はメトキシ基等の炭玠数〜のアルコキシ基、
アロキシル基、奜たしくはプノキシ基等の炭玠
数〜のアロキシル基、アラルコキシ基、奜た
しくはベンゞルオキシ基等の炭玠数〜10のアラ
ルコキシ基、シアノ基たたはニトロ基、R4はア
ルキル基、奜たしくはメチル基、゚チル基、プロ
ピル基、ブチル基等の炭玠数〜のアルキル
基、プニル基等のアリヌル基、ベンゞル基等の
アラルキル基、は䟋えばポリ゚チレングリコヌ
ル、ポリプロピレングリコヌル等の残基であるオ
キシアルキレン基−CpH2prCpH2p−、匏
䞭のは奜たしくは〜の敎数、は奜たしく
は〜100の敎数を意味するたたはメチレン、
゚チレン、プロピレン、ブチレン等のアルキレン
基−CqH2p−、匏䞭のは奜たしくは〜の
敎数を意味する〕で衚される化合物のヒドロキ
シ基の党郚たたは䞀郚に、−キノンゞアゞ
ドスルホニルクロリドを瞮合させお埗られる
−キノンゞアゞド化合物(A)の少なくずも皮
を、〜100重量郚配合しおなるポゞ型感光性暹
脂組成物に関する。 本発明に甚いられるアルカリ可溶性暹脂ずしお
は特に限定されないが、䟋えばプノヌルずホル
ムアルデヒドから埗られるノボラツク暹脂、クレ
ゟヌルずホルムアルデヒドから埗られるノボラツ
ク暹脂、ヒドロキシスチレン重合䜓、アミノスチ
レン重合䜓、゚チレン性䞍飜和カルボン酞ず他の
モノオレフむン系化合物ずの共重合䜓等が挙げら
れる。 本発明に甚いられる−キノンゞアゞド化
合物(A)は、䞊蚘䞀般匏たたはで衚さ
れる化合物ず、−ナフトキノンゞアゞド−
−スルホニルクロリド、−ナフトキノン
ゞアゞド−−スルホニルクロリド、−ベ
ンゟキノンゞアゞド−−スルホニルクロリド等
の−キノンゞアゞドスルホニルクロリドを
塩基性觊媒の存圚䞋に瞮合反応させたのち、粟補
するこずにより埗られる。 瞮合反応における−キノンゞアゞドスル
ホニルクロリドの䜿甚量は、前蚘䞀般匏た
たはで衚される化合物の氎酞基の数によ぀
お適宜調敎され、通垞は圓該氎酞基数圓量に察
しお−キノンゞアゞドスルホニルクロリド
モルが䜿甚される。 瞮合反応に䜿甚する塩基性觊媒ずしおは、䟋え
ば氎酞化ナトリりム、氎酞化カリりム、炭酞ナト
リりム等の無機アルカリ、ゞ゚チルアミン、トリ
゚チルアミン等の有機アミン類を挙げるこずがで
きる。これらの塩基性觊媒の䜿甚量は、䜿甚する
−キノンゞアゞドスルホニルクロリドに察
しお通垞〜倍モル、奜たしくは〜1.3倍モ
ルである。瞮合反応は、通垞溶媒の存圚䞋におい
お行れ、該溶媒ずしおは氎、ゞオキサン、ゞ゚チ
ル゚ヌテル、テトラヒドロフラン、アセトン、メ
チル゚チルケトン等が甚いられる。溶媒の䜿甚量
は、䞀般匏たたはで衚される化合物
100重量郚に察しお通垞100〜1000重量郚である。 瞮合反応枩床は、䜿甚する溶媒によ぀お異なる
が、䞀般的には−20〜60℃、奜たしくは〜40℃
である。 前蚘䞀般匏で衚される化合物ずしおは、
䟋えば゚チレングリコヌル−ゞ−ヒドロキシ
ベンゟ゚ヌト、゚チレングリコヌル−ゞ−
ヒドロキシベンゟ゚ヌト、゚チレングリコヌル
−ゞ−ヒドロキシベンゟ゚ヌト、゚チレン
グリコヌル−ゞ−ゞヒドロキシベンゟ゚
ヌト、゚チレングリコヌル−ゞ−ゞヒ
ドロキシベンゟ゚ヌト、゚チレングリコヌル−
ゞ−ゞヒドロキシベンゟ゚ヌト、゚チ
レングリコヌル−ゞ−トリヒドロキ
シベンゟ゚ヌト、゚チレングリコヌル−ゞ
−ニトロ−−トリヒドロキシベンゟ゚
ヌト、゚チレングリコヌル−ゞ−シアノ−
−トリヒドロキシベンゟ゚ヌト、゚
チレングリコヌル−ゞ−トリヒドロ
キシベンゟ゚ヌト、ゞ゚チレングリコヌル−ゞ
−ゞヒドロキシベンゟ゚ヌト、ゞ゚チレ
ングリコヌル−ゞ−ヒドロキシ−−メチル
ベンゟ゚ヌト、トリ゚チレングリコヌル−ゞ
−ヒドロキシ−−メチルベンゟ゚ヌト、テ
トラ゚チレングリコヌル−ゞ−クロル−−
ヒドロキシベンゟ゚ヌト、ポリ゚チレングリコ
ヌル−ゞ−クロル−−ヒドロキシベンゟ゚
ヌト、プロピレングリコヌル−ゞ−クロル
−−ヒドロキシベンゟ゚ヌト、ポリプロピレ
ングリコヌル−ゞ−ヒドロキシ−−ニトロ
ベンゟ゚ヌト、ポリプロピレングリコヌル−ゞ
−ヒドロキシ−−メトキシベンゟ゚ヌト、
−プロパンゞオヌル−ゞ−ヒドロキシ
−−メトキシベンゟ゚ヌト、−プロパ
ンゞオヌル−ゞ−トリヒドロキシベ
ンゟ゚ヌト、−ブタンゞオヌル−ゞ
−ヒドロキシベンゟ゚ヌト、−ブタンゞ
オヌル−ゞ−ブロム−−ヒドロキシベンゟ
゚ヌト、ポリテトラヒドロフラングリコヌル−
ゞ−トリヒドロキシベンゟ゚ヌト、
ネオペンチルグリコヌル−ゞ−トリ
ヒドロキシベンゟ゚ヌト等が挙げられる。 前蚘䞀般匏で衚される化合物ずしおは、
䟋えば゚チレングリコヌル−モノメチル−モノ
−トリヒドロキシベンゟ゚ヌト、゚
チレングリコヌル−モノ゚チル−モノ
−トリヒドロキシベンゟ゚ヌト、゚チレング
リコヌル−モノ゚チル−モノ−トリ
ヒドロキシベンゟ゚ヌト、ゞ゚チレングリコヌ
ル−モノ゚チル−モノ−ゞヒドロキシベ
ンゟ゚ヌト、トリ゚チレングリコヌル−モノ゚
チル−モノ−ゞヒドロキシベンゟ゚ヌ
ト、゚チレングリコヌル−モノプニル−モノ
−トリヒドロキシベンゟ゚ヌト等
が挙げられる。 䞊蚘−キノンゞアゞド化合物(A)は、単独
でたたは皮以䞊混合しお甚いるこずができ、該
−キノンゞアゞド化合物(A)の配合量は、ア
ルカリ可溶性暹脂100重量郚に察しお〜100重量
郚、奜たしくは10〜50重量郚である。この配合量
が重量郚未満では、珟像埌の残膜率が䞍充分で
あり、たた埗られるパタヌンが熱倉圢し易く、さ
らに高い解像床の感光性暹脂組成物を埗るこずが
できない。たた配合量が100重量郚を超えるず、
高感床の感光性暹脂組成物を埗るこずができな
い。 本発明のポゞ型感光性暹脂組成物には、
−キノンゞアゞド化合物(A)以倖の−キノン
ゞアゞド化合物を、䟋えばアルカリ可溶性暹脂
100重量郚に察しお100重量郚以䞋、奜たしくは50
重量郚以䞋、さらに奜たしくは20重量郚以䞋の割
合で配合するこずができる。これらの−キ
ノンゞアゞド化合物ずしおは、米囜特蚱3046118
号明现曞および特公昭37−18015号明现曞に開瀺
されおいる化合物、䟋えば−トリヒド
ロキシベンゟプノン、−トリヒドロ
キシベンゟプノン、−トリヒドロキ
シプニルメチルケトン、−トリヒド
ロキシプニルメチルケトン、−トリ
ヒドロキシプニルメチルケトン等のヒドロキシ
基の党郚たたは䞀郚に、−ナフトキノンゞ
アゞド−−スルホニルクロリド、−ナフ
トキノンゞアゞド−−スルホニルクロリド、
−ベンゟキノンゞアゞド−−スルホニル
クロリド等を瞮合反応させお埗られる化合物が挙
げられる。 本発明の組成物には、必芁に応じお珟像性、組
成物の保存安定性等を向䞊させるため、䟋えばロ
ゞン、シ゚ラツク等の倩然暹脂スチレンず無氎マ
レむン酞ずの共重合䜓、スチレンずアクリル酞、
メタクリル酞たたはこれらのアルキル゚ステルず
の共重合䜓、アクリル酞゚ステル重合䜓、ビニル
゚ヌテル重合䜓、酢酞ビニル重合䜓、ビニルアル
コヌル重合䜓、ビニルピロリドン重合䜓等の合成
暹脂を、アルカリ可溶性暹脂100重量郚に察しお
〜50重量郚、奜たしくは〜30重量郚の割合で
配合するこずができる。 たた本発明の組成物には、必芁に応じお保存安
定剀、色玠等を添加配合するこずもできる。 本発明のポゞ型感光性暹脂組成物を、埮现加工
すべき基板䞊に塗垃し、掻性化茻射線、䟋えば玫
倖線等を郚分的に照射した埌、珟像液で珟像する
こずによ぀おパタヌンを圢成するこずができる。
組成物を塗垃する際には、基板ず組成物の接着力
を向䞊させるため、遞定した基板に応じおに䟋え
ばヘキサメチルゞシラザン、クロルメチルシラン
等の接着助剀を基板に塗垃しおもよい。 組成物を基板に塗垃する方法ずしおは、䟋え
ば、組成物の濃床が〜50重量ずなるように適
圓な溶剀を加えお組成物を溶解し、これを回転塗
垃、流し塗垃、ロヌル塗垃等により塗垃する方法
が挙げられる。この際に甚いられる溶剀ずしお
は、䟋えばシクロペンタノン、シクロヘキサノ
ン、ゞアセトンアルコヌル等のケトン類、−ブ
タノヌル等のアルコヌル類、ゞオキサン、゚チレ
ングリコヌルゞメチル゚ヌテル、゚チルゲリコヌ
ルゞ゚チル゚ヌテル等の゚ヌテル類、゚チルグリ
コヌルモノメチル゚ヌテル、゚チレングリコヌル
モノ゚チル゚ヌテル等のアルコヌル゚ヌテル類、
酢酞ブチル、セロ゜ルブアセテヌト、メトキシ゚
チルアセテヌト等の゚ステル類、−ト
リクロル゚チレン等のハロゲン化炭化氎玠類、ゞ
メチルアセトアミド、ゞメチルスルホキシド、ゞ
メチルホルムアミド、−メチルピロリドン等の
極性溶媒が、単独でたたは混合しお甚いられる。
さらに特願昭58−133108号明现曞に蚘茉の高沞点
溶剀、䟋えばベンゞル゚チル゚ヌテル、ゞ゚チレ
ングリコヌルモノメチル゚ヌテル、アセトニルア
セトン、カプロン酞、−オクタノヌル、ベンゞ
ルアルコヌル炭酞プロピレン等を混合しお甚いる
こずもできる。 珟像液ずしおは、䟋えば氎酞化ナトリりム、氎
酞化カリりム、炭酞ナトリりム、ケむ酞ナトリり
ム、メタケむ酞ナトリりム、リン酞䞉ナトリり
ム、リン酞氎玠ナトリりム等の無機アルカリ類の
氎溶液、−プロピルアミン、ゞ−−プロピル
アミン、ゞ−−ブチルアミン、メチルゞ゚チル
アミン、ピロヌル、−ゞメチルピロヌル、
β−ピコリン、コリゞン、ピペリゞン、ピペラゞ
ン、トリ゚チレンゞアミン等のアミン類の氎溶
液、ゞメチル゚タノヌルアミン、トリ゚タノヌル
アミン、ゞ゚チルヒドロキシアミン等のアルコヌ
ルアミン類の氎溶液、テトラメチルアンモニりム
ヒドロキシド、テトラ゚チルアンモニりムヒドロ
キシド等の第玚アンモニりム塩の氎溶液、アン
モニア氎等が挙げられる。 たた珟像液にメタノヌル、゚タノヌル等のアル
コヌル類、亜硫酞系安定剀たたは界面掻性剀を適
圓量添加するこずもできる。 〔実斜䟋〕 以䞋、本発明を実斜䟋により詳述するが、本発
明はこれらの実斜䟋により䜕ら制玄されるもので
はない。 実斜䟋  (1) ノボラツク暹脂の合成 500mlの䞉ツ口セパラブルフラスコに、−
クレゟヌル75および−クレゟヌル25を仕
蟌んだ埌、37重量のホルマリン氎溶液66mlお
よび蓚酞0.04を添加した。撹拌しながらセパ
ラブルフラスコを油济に浞しお反応枩床を100
℃に調節し、10時間反応させた。反応終了埌、
30mmHgに枛圧しお氎を留去し、さらに内枩を
130℃に䞊昇させお未反応物を陀去した。次い
で反応生成物である溶融したアルカリ可溶性ノ
ボラツク暹脂を宀枩に戻しお回収した。 (2) 感光剀の合成 500mlの䞉ツ口フラスコに、没食子酞56.4
および゚チレングリコヌル6.2を仕蟌んだ埌、
ゞオキサン150ml、ベンれン150mlおよび濃硫酞
mlを添加した。次いでこの䞉ツ口フラスコを
油济に浞しお油济枩床120℃で20時間反応させ
た。生成する氎は、氎分分離噚で反応系倖ぞ流
出させた。反応終了埌、反応系を氷氎に泚ぎ、
℃付近で生成物の゚チレングリコヌル−ゞ
−トリヒドロキシベンゟ゚ヌト
を析出させ、濟別埌氎掗を繰返しお粟補した。 遮光䞋に500mlの䞉ツ口セパラブルフラスコ、
゚チレングリコヌル−ゞ−トリヒ
ドロキシベンゟ゚ヌト11.0、−ナフ
トキノンゞアゞド−−スルホニルクロリド
24.2およびアセトン200mlを仕蟌んで溶解さ
せた。この溶液を撹拌しながらトリ゚チルアミ
ン10.9を埐々に添加し、宀枩で時間反応さ
せた。反応終了埌、内容物を倚量の重量塩
酞氎に滎䞋しお生成物を沈柱させ、氎掗埌40℃
で20時間真空也燥しお゚チレングリコヌル−ゞ
−トリヒドロキシベンゟ゚ヌト−
−ナフトキノンゞアゞド−−スルホン
酞トリ゚ステル感光剀を埗た。 (3) 感光性暹脂組成物の調補ず評䟡 遮光䞋で(1)で埗られたアルカリ可溶性ノボラ
ツク暹脂20および(2)で埗られた感光剀A5
を、75のセロ゜ルブアセテヌトに溶解し、孔
埄0.2Όのメンブランフむルタで濟過しお感光
性暹脂組成物の溶液を調補した。 埗られた溶液を、シリコン酞化膜り゚ハヌ䞊
に、スピンナヌで塗垃した埌、オヌブン䞭で90
℃で25分間プレベヌクしお1.2Ό厚の感光性暹
脂組成物膜を埗た。凞版印刷瀟補テストパタヌ
ンマスクをり゚ハヌに密着し、18.9cm2の
玫倖線オプテむカルア゜シ゚ヌト・むンコヌ
ポレむテツド補モデル205UVパワヌメヌタヌ
により枬定を照射し、テトラメチルアンモニ
りムヒドロキシド1.6重量氎溶液で20℃で60
秒間珟像したずころ、線幅0.5Όのパタヌンを
解像できた。未露光郚の残膜率は98.8ず非垞
に高く、たた珟像残りがなくパタヌンが鮮明で
珟像性に優れ、珟像埌のパタヌンを170℃で30
分間オヌブン䞭でポストベヌクしたが、パタヌ
ン厩れは芳察されなか぀た。 実斜䟋 〜 (1) 感光剀〜の合成 実斜䟋(2)ず同様にしお次に瀺す感光剀〜
を合成した。 感光剀−プロパンゞオヌル−ゞ
−トリヒドロキシベンゟ゚ヌト
11.4ず−ナフトキノンゞアゞド−
−スルホニルクロリド32.2ずの反応生成物
である−プロパンゞオヌル−ゞ
−トリヒドロキシベンゟ゚ヌト−
−ナフトキノンゞアゞド−−スルホン酞
テトラ゚ステル。 感光剀ゞ゚チレングリコヌル−ゞ
−ゞヒドロキシベンゟ゚ヌト11.3ず
−ナフトキノンゞアゞド−−スルホニル
クロリド24.2ずの反応生成物であるゞ゚チ
レングリコヌル−ゞ−ゞヒドロキシ
ベンゟ゚ヌト−−ナフトキノンゞア
ゞド−−スルホン酞トリ゚ステル。 感光剀−ブタンゞオヌル−ゞ−
ヒドロキシベンゟ゚ヌト13.2ず−
ナフトキノンゞアゞド−−スルホニルクロ
リド21.5ずの反応生成物である−ブ
タンゞオヌル−ゞ−ヒドロキシベンゟ゚
ヌト−−ナフトキノンゞアゞド−
−スルホン酞ゞ゚ステル。 感光剀゚チレングリコヌル−ゞ−ヒド
ロキシベンゟ゚ヌト9.1ず1.2−ナフトキ
ノンゞアゞド−−スルホニルクロリド16.1
ずの反応生成物である゚チレングリコヌル
−ゞ−ヒドロキシベンゟ゚ヌト−
−ナフトキノンゞアゞド−−スルホン酞
ゞ゚ステル。 感光剀゚チレングリコヌル−モノ゚チル−
モノ−トリヒドロキシベンゟ゚
ヌト9.7ず1.2−ナフトキノンゞアゞド−
−スルホニルクロリド35.5ずの反応生成
物である゚チレングリコヌル−モノ゚チル−
モノ−トリヒドロキシベンゟ゚
ヌト−−ナフトキノンゞアゞド−
−スルホン酞トリ゚ステル (2) 感光性暹脂組成物の調補ず評䟡 実斜䟋(1)で埗られたアルカリ可溶性ノボラ
ツク暹脂20および感光剀〜それぞれ
を甚いお実斜䟋(3)ず同様にしお感光性暹脂組
成物の溶液を調補した。この溶液を甚いお実斜
䟋(3)ず同様にしお評䟡し、結果を第衚に瀺
した。
[Industrial Field of Application] The present invention relates to a positive photosensitive resin composition, and more specifically, to a positive photosensitive resin composition, and more specifically to an alkali-soluble resin and a specific one or two.
- A positive photosensitive resin composition containing a quinonediazide compound, which has high sensitivity, high resolution, and high residual film rate, has excellent developability, and is suitable as a heat-resistant photoresist for producing integrated circuits. . [Prior Art] Conventionally, as a photoresist for manufacturing integrated circuits, a negative photoresist in which a bisazide compound is blended with cyclized isoprene rubber is known. However, this negative type photoresist has a limitation in resolution, and therefore has the disadvantage that it cannot sufficiently respond to higher integration of integrated circuits. On the other hand, since positive photoresists have superior resolution in contrast to negative photoresists, they are considered to be able to fully respond to higher integration of integrated circuits. Currently, positive photoresists commonly used in this field are made by blending an alkali-soluble resin with a 1,2-quinonediazide compound as a photosensitizer. However, conventional positive photoresists
Satisfactory results have not always been obtained in various performances such as sensitivity, resolution, residual film rate, and heat resistance. [Problems to be Solved by the Invention] The purpose of the present invention is to eliminate the drawbacks of the above-mentioned prior art, and to provide a positive-working photosensitive material that has high sensitivity, high resolution, high residual film rate, excellent developability, and heat resistance. An object of the present invention is to provide a synthetic resin composition. As a result of extensive research to achieve this objective, the present inventors have discovered that the above-mentioned drawbacks can be improved by blending a specific 1,2-quinonediazide compound as a photosensitizer into an alkali-soluble resin. We have arrived at the present invention. [Means for Solving the Problems] The positive photosensitive resin composition of the present invention has the general formula () with respect to 100 parts by weight of the alkali-soluble resin. or general expression () [In the formula, a, b and c are the same or different, and 1
an integer of ~4, R 1 , R 2 and R 3 are the same or different and each has 1 to 1 carbon atoms, such as a halogen atom such as a hydrogen atom, a chlorine atom, or a bromine atom, an alkyl group, preferably a methyl group, an ethyl group, a propyl group, etc. 4 alkyl group,
Aryl groups such as phenyl groups and naphthyl groups, aralkyl groups such as benzyl groups, alkoxy groups, preferably alkoxy groups having 1 to 3 carbon atoms such as methoxy groups,
an alloxyl group, preferably an alloxyl group having 6 to 9 carbon atoms such as a phenoxy group, an aralkoxy group, preferably an aralkoxy group having 7 to 10 carbon atoms such as a benzyloxy group, a cyano group or a nitro group, R 4 is an alkyl group, preferably is an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, a propyl group, a butyl group, an aryl group such as a phenyl group, an aralkyl group such as a benzyl group, and Z is a residue of polyethylene glycol, polypropylene glycol, etc. An oxyalkylene group (-( CpH2pO ) rCpH2p- , in which p preferably means an integer of 1 to 4, and r preferably means an integer of 1 to 100) or methylene,
1,2 in all or part of the hydroxyl group of a compound represented by an alkylene group ( -CqH2p- , q in the formula preferably means an integer of 1 to 4) such as ethylene, propylene, butylene, etc. -1 obtained by condensing quinonediazide sulfonyl chloride,
The present invention relates to a positive photosensitive resin composition containing 5 to 100 parts by weight of at least one 2-quinonediazide compound (A). The alkali-soluble resin used in the present invention is not particularly limited, but includes, for example, novolak resin obtained from phenol and formaldehyde, novolak resin obtained from cresol and formaldehyde, hydroxystyrene polymer, aminostyrene polymer, ethylenically unsaturated carboxylic acid. and other monoolefin compounds. The 1,2-quinonediazide compound (A) used in the present invention is a compound represented by the above general formula () or (), and a 1,2-naphthoquinonediazide-
After carrying out a condensation reaction of 1,2-quinonediazide sulfonyl chloride such as 4-sulfonyl chloride, 1,2-naphthoquinonediazide-5-sulfonyl chloride, and 1,2-benzoquinonediazide-4-sulfonyl chloride in the presence of a basic catalyst. , obtained by purification. The amount of 1,2-quinonediazide sulfonyl chloride used in the condensation reaction is appropriately adjusted depending on the number of hydroxyl groups in the compound represented by the general formula () or (), and is usually 1 equivalent per equivalent of the number of hydroxyl groups. , 1 mol of 2-quinonediazide sulfonyl chloride is used. Examples of the basic catalyst used in the condensation reaction include inorganic alkalis such as sodium hydroxide, potassium hydroxide, and sodium carbonate, and organic amines such as diethylamine and triethylamine. The amount of these basic catalysts used is usually 1 to 2 times the mole, preferably 1 to 1.3 times the mole of 1,2-quinonediazide sulfonyl chloride used. The condensation reaction is usually carried out in the presence of a solvent, and water, dioxane, diethyl ether, tetrahydrofuran, acetone, methyl ethyl ketone, etc. are used as the solvent. The amount of solvent used is determined by the compound represented by the general formula () or ().
It is usually 100 to 1000 parts by weight per 100 parts by weight. The condensation reaction temperature varies depending on the solvent used, but is generally -20 to 60°C, preferably 0 to 40°C.
It is. As the compound represented by the general formula (),
For example, ethylene glycol di(2-hydroxybenzoate), ethylene glycol di(3-hydroxybenzoate),
hydroxybenzoate), ethylene glycol di(4-hydroxybenzoate), ethylene glycol di(2,3-dihydroxybenzoate), ethylene glycol di(2,6-dihydroxybenzoate), ethylene glycol di(2,6-dihydroxybenzoate)
Di(3,5-dihydroxybenzoate), Ethylene glycol-di(3,4,5-trihydroxybenzoate), Ethylene glycol-di(2
-nitro-3,4,5-trihydroxybenzoate), ethylene glycol-di(2-cyano-
3,4,5-trihydroxybenzoate), ethylene glycol-di(2,4,6-trihydroxybenzoate), diethylene glycol-di(2,3-dihydroxybenzoate), diethylene glycol-di(2-hydroxy-3-methyl benzoate), triethylene glycol-di(3-hydroxy-4-methylbenzoate), tetraethylene glycol-di(4-chloro-2-
hydroxybenzoate), polyethylene glycol di(5-chloro-2-hydroxybenzoate), propylene glycol di(3-chloro-4-hydroxybenzoate), polypropylene glycol di(3-hydroxy-4-nitrobenzoate), polypropylene glycol-di(2-hydroxy-5-methoxybenzoate),
1,3-propanediol-di(4-hydroxy-3-methoxybenzoate), 1,3-propanediol-di(3,4,5-trihydroxybenzoate), 1,4-butanediol-di(3
-hydroxybenzoate), 1,4-butanediol-di(5-bromo-2-hydroxybenzoate), polytetrahydrofuran glycol-
di(3,4,5-trihydroxybenzoate),
Examples include neopentyl glycol di(3,4,5-trihydroxybenzoate). As the compound represented by the general formula (),
For example, ethylene glycol-monomethyl-mono(3,4,5-trihydroxybenzoate), ethylene glycol-monoethyl-mono(3,4,
5-trihydroxybenzoate), ethylene glycol monoethyl mono(2,4,6-trihydroxybenzoate), diethylene glycol monoethyl mono(2,3-dihydroxybenzoate), triethylene glycol monoethyl mono(3,5 -dihydroxybenzoate), ethylene glycol monophenyl mono(3,4,5-trihydroxybenzoate), and the like. The above 1,2-quinonediazide compound (A) can be used alone or in combination of two or more, and the blending amount of the 1,2-quinonediazide compound (A) is based on 100 parts by weight of the alkali-soluble resin. The amount is 5 to 100 parts by weight, preferably 10 to 50 parts by weight. If this amount is less than 5 parts by weight, the residual film rate after development will be insufficient, the resulting pattern will be easily deformed by heat, and it will not be possible to obtain a photosensitive resin composition with higher resolution. Also, if the amount added exceeds 100 parts by weight,
A highly sensitive photosensitive resin composition cannot be obtained. The positive photosensitive resin composition of the present invention contains 1,2
- A 1,2-quinonediazide compound other than the quinonediazide compound (A), for example, an alkali-soluble resin
100 parts by weight or less, preferably 50 parts by weight
It can be blended in an amount of not more than 20 parts by weight, more preferably not more than 20 parts by weight. These 1,2-quinonediazide compounds include US Pat. No. 3,046,118
2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,4- 1,2-naphthoquinone diazide- in all or part of the hydroxy group of trihydroxyphenylmethylketone, 3,4,5-trihydroxyphenylmethylketone, 2,4,6-trihydroxyphenylmethylketone, etc. 4-sulfonyl chloride, 1,2-naphthoquinonediazide-5-sulfonyl chloride,
Examples include compounds obtained by subjecting 1,2-benzoquinonediazide-5-sulfonyl chloride to a condensation reaction. In order to improve developability, storage stability of the composition, etc., the composition of the present invention may contain, for example, a copolymer of styrene and maleic anhydride, a copolymer of styrene and maleic anhydride, a copolymer of styrene and maleic anhydride, a natural resin such as rosin or silica, etc. ,
Synthetic resins such as methacrylic acid or copolymers with these alkyl esters, acrylic acid ester polymers, vinyl ether polymers, vinyl acetate polymers, vinyl alcohol polymers, vinyl pyrrolidone polymers, etc. are added to 100 parts by weight of an alkali-soluble resin. It can be blended in an amount of 1 to 50 parts by weight, preferably 5 to 30 parts by weight. Furthermore, storage stabilizers, pigments, and the like may be added to the composition of the present invention, if necessary. A pattern is formed by applying the positive photosensitive resin composition of the present invention onto a substrate to be microfabricated, partially irradiating it with activating radiation, such as ultraviolet rays, and developing it with a developer. can do.
When applying the composition, depending on the selected substrate, an adhesion aid such as hexamethyldisilazane or chloromethylsilane may be applied to the substrate in order to improve the adhesion between the substrate and the composition. . As a method for applying the composition to the substrate, for example, the composition is dissolved by adding an appropriate solvent so that the concentration of the composition becomes 5 to 50% by weight, and then the composition is applied by spin coating, flow coating, roll coating, etc. An example of this method is to apply it by. Examples of solvents used in this case include ketones such as cyclopentanone, cyclohexanone, and diacetone alcohol, alcohols such as n-butanol, ethers such as dioxane, ethylene glycol dimethyl ether, and ethyl gelicol diethyl ether, and ethyl glycol. Alcohol ethers such as monomethyl ether and ethylene glycol monoethyl ether,
Esters such as butyl acetate, cellosolve acetate, methoxyethyl acetate, halogenated hydrocarbons such as 1,1,2-trichloroethylene, polar solvents such as dimethylacetamide, dimethylsulfoxide, dimethylformamide, N-methylpyrrolidone, etc. are used alone. used separately or in combination.
Furthermore, high boiling point solvents described in Japanese Patent Application No. 133108/1982, such as benzyl ethyl ether, diethylene glycol monomethyl ether, acetonyl acetone, caproic acid, 1-octanol, benzyl alcohol propylene carbonate, etc., may be used in combination. . Examples of the developer include aqueous solutions of inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, trisodium phosphate, and sodium hydrogen phosphate, n-propylamine, di-n -propylamine, di-n-butylamine, methyldiethylamine, pyrrole, 2,5-dimethylpyrrole,
Aqueous solutions of amines such as β-picoline, collidine, piperidine, piperazine, and triethylenediamine, aqueous solutions of alcohol amines such as dimethylethanolamine, triethanolamine, and diethylhydroxyamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, etc. Examples include aqueous solutions of quaternary ammonium salts and aqueous ammonia. Furthermore, an appropriate amount of alcohols such as methanol and ethanol, sulfite stabilizers, or surfactants may be added to the developer. [Examples] Hereinafter, the present invention will be explained in detail with reference to Examples, but the present invention is not limited to these Examples in any way. Example 1 (1) Synthesis of novolac resin In a 500 ml three-necked separable flask, m-
After charging 75 g of cresol and 25 g of p-cresol, 66 ml of a 37% by weight formalin aqueous solution and 0.04 g of oxalic acid were added. While stirring, immerse the separable flask in an oil bath to raise the reaction temperature to 100℃.
The temperature was adjusted to ℃ and allowed to react for 10 hours. After the reaction is complete,
Reduce the pressure to 30mmHg to distill off the water, and then lower the internal temperature.
The temperature was raised to 130°C to remove unreacted substances. The reaction product, molten alkali-soluble novolac resin, was then returned to room temperature and recovered. (2) Synthesis of photosensitizer A: 56.4 g of gallic acid in a 500 ml three-necked flask.
After adding 6.2g of ethylene glycol,
150 ml of dioxane, 150 ml of benzene and 5 ml of concentrated sulfuric acid were added. Next, this three-necked flask was immersed in an oil bath and reacted for 20 hours at an oil bath temperature of 120°C. The produced water was drained out of the reaction system using a water separator. After the reaction is complete, pour the reaction system into ice water,
The product ethylene glycol-di(3,4,5-trihydroxybenzoate) at around 0°C
was precipitated, separated by filtration, and purified by repeated washing with water. A 500ml three-necked separable flask under light-shielding conditions.
11.0 g of ethylene glycol di(3,4,5-trihydroxybenzoate), 1,2-naphthoquinonediazide-5-sulfonyl chloride
24.2 g and 200 ml of acetone were charged and dissolved. 10.9 g of triethylamine was gradually added to this solution while stirring, and the mixture was allowed to react at room temperature for 1 hour. After the reaction, the contents were dropped into a large amount of 1% by weight hydrochloric acid solution to precipitate the product, and after washing with water, the product was heated at 40°C.
After vacuum drying for 20 hours, ethylene glycol-di(3,4,5-trihydroxybenzoate)-
1,2-naphthoquinonediazide-5-sulfonic acid triester (sensitizer A) was obtained. (3) Preparation and evaluation of photosensitive resin composition 20 g of alkali-soluble novolak resin obtained in (1) and 5 g of photosensitizer A obtained in (2) under light shielding.
was dissolved in 75 g of cellosolve acetate and filtered through a membrane filter with a pore size of 0.2 ÎŒm to prepare a solution of a photosensitive resin composition. The obtained solution was applied onto a silicon oxide film wafer using a spinner, and then heated in an oven for 90 minutes.
A photosensitive resin composition film having a thickness of 1.2 ÎŒm was obtained by prebaking at °C for 25 minutes. A test pattern mask manufactured by Toppan Printing Co., Ltd. was placed in close contact with the wafer, irradiated with 18.9 mJ/cm 2 of ultraviolet light (measured with a model 205 UV power meter manufactured by Optical Associates, Inc.), and treated with a 1.6% by weight aqueous solution of tetramethylammonium hydroxide. 60℃
When developed for seconds, a pattern with a line width of 0.5 ÎŒm could be resolved. The residual film rate in the unexposed area is extremely high at 98.8%, and there is no development residue, and the pattern is clear and has excellent developability.
After post-baking in an oven for a minute, no pattern collapse was observed. Examples 2 to 6 (1) Synthesis of photosensitizers B to F The following photosensitizers B to F were prepared in the same manner as in Example 1 (2).
F was synthesized. Photosensitizer B: 1,3-propanediol-di(3,4,5-trihydroxybenzoate)
11.4g and 1,2-naphthoquinonediazide-5
-1,3-propanediol-di(3,
4,5-trihydroxybenzoate)-1,
2-naphthoquinonediazide-5-sulfonic acid tetraester. Photosensitizer C: diethylene glycol-di(2,3
-dihydroxybenzoate) 11.3g and 1,
Diethylene glycol-di(2,3-dihydroxybenzoate)-1,2-naphthoquinonediazide-5-sulfonic acid triester, which is a reaction product with 24.2 g of 2-naphthoquinonediazide-5-sulfonyl chloride. Photosensitizer D: 1,4-butanediol-di(3-
hydroxybenzoate) 13.2g and 1,2-
1,4-butanediol-di(3-hydroxybenzoate)-1,2-naphthoquinonediazide-5, which is a reaction product with 21.5 g of naphthoquinonediazide-5-sulfonyl chloride.
-Sulfonic acid diester. Photosensitizer E: 9.1 g of ethylene glycol di(4-hydroxybenzoate) and 16.1 g of 1,2-naphthoquinonediazide-5-sulfonyl chloride
Ethylene glycol-di(4-hydroxybenzoate)-1, which is the reaction product with g
2-naphthoquinonediazide-5-sulfonic acid diester. Photosensitizer F: Ethylene glycol-monoethyl-
9.7 g of mono(3,4,5-trihydroxybenzoate) and 1,2-naphthoquinonediazide
Ethylene glycol monoethyl, the reaction product with 35.5 g of 5-sulfonyl chloride
Mono(3,4,5-trihydroxybenzoate)-1,2-naphthoquinonediazide-5
-Sulfonic acid triester (2) Preparation and evaluation of photosensitive resin composition 20 g of alkali-soluble novolak resin obtained in Example 1 (1) and 5 g each of photosensitizers B to F
A solution of a photosensitive resin composition was prepared in the same manner as in Example 1(3) using the following. This solution was evaluated in the same manner as in Example 1(3), and the results are shown in Table 1.

〔発明の効果〕〔Effect of the invention〕

本発明のポゞ型感光性暹脂組成物は、高感床、
高解像床および高残膜率を有し、か぀珟像性にも
優れたものであり、集積回路䜜補甚の耐熱性を有
するポゞ型ホトレゞストずしお特に有甚であるず
ずもに、マスク補䜜甚のポゞ型ホトレゞスト等ず
しおも有甚なものである。
The positive photosensitive resin composition of the present invention has high sensitivity,
It has high resolution, high residual film rate, and excellent developability, and is particularly useful as a heat-resistant positive photoresist for integrated circuit manufacturing, as well as as a positive photoresist for mask production. is also useful.

Claims (1)

【特蚱請求の範囲】  アルカリ可溶性暹脂100重量郚に察しお䞀般
匏 たたは䞀般匏 匏䞭、、およびは同䞀たたは異なり、
〜の敎数、R1、R2およびR3は同䞀たたは異な
り、氎玠原子、ハロゲン原子、アルキル基、アリ
ヌル基、アラルキル基、アルコキシ基、アロキシ
ル基、アラルコキシ基、シアノ基たたはニトロ
基、R4はアルキル基、アリヌル基たたはアラル
キル基、はアルキレン基たたはオキシアルキレ
ン基を意味するで衚される化合物のヒドロキシ
基の党郚たたは䞀郚に、−キノンゞアゞド
スルホニルクロリドを瞮合させお埗られる
−キノンゞアゞド化合物(A)の少なくずも皮を、
〜100重量郚配合しおなるポゞ型感光性暹脂組
成物。
[Claims] 1 General formula () for 100 parts by weight of alkali-soluble resin or general expression () (In the formula, a, b and c are the same or different, and 1
an integer of ~4, R 1 , R 2 and R 3 are the same or different, hydrogen atom, halogen atom, alkyl group, aryl group, aralkyl group, alkoxy group, alloxyl group, aralkoxy group, cyano group or nitro group, R 4 is an alkyl group, an aryl group, or an aralkyl group, and Z is an alkylene group or an oxyalkylene group). 1,2
- at least one quinonediazide compound (A),
A positive photosensitive resin composition containing 5 to 100 parts by weight.
JP59002521A 1984-01-10 1984-01-10 Positive photosensitive resin composition Granted JPS60146234A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59002521A JPS60146234A (en) 1984-01-10 1984-01-10 Positive photosensitive resin composition
EP85300184A EP0148787A3 (en) 1984-01-10 1985-01-10 Positive type photosensitive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59002521A JPS60146234A (en) 1984-01-10 1984-01-10 Positive photosensitive resin composition

Publications (2)

Publication Number Publication Date
JPS60146234A JPS60146234A (en) 1985-08-01
JPH045378B2 true JPH045378B2 (en) 1992-01-31

Family

ID=11531676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59002521A Granted JPS60146234A (en) 1984-01-10 1984-01-10 Positive photosensitive resin composition

Country Status (1)

Country Link
JP (1) JPS60146234A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654381B2 (en) * 1985-12-24 1994-07-20 日本合成ゎム株匏䌚瀟 Positive resist for integrated circuit fabrication
JPH0820730B2 (en) * 1986-10-30 1996-03-04 日本合成ゎム株匏䌚瀟 Positive type radiation sensitive resin composition
KR0164962B1 (en) * 1995-10-14 1999-01-15 김흥Ʞ Positive Photoresist Composition

Also Published As

Publication number Publication date
JPS60146234A (en) 1985-08-01

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