JPH0453865A - Thermosetting resin composition - Google Patents
Thermosetting resin compositionInfo
- Publication number
- JPH0453865A JPH0453865A JP16310190A JP16310190A JPH0453865A JP H0453865 A JPH0453865 A JP H0453865A JP 16310190 A JP16310190 A JP 16310190A JP 16310190 A JP16310190 A JP 16310190A JP H0453865 A JPH0453865 A JP H0453865A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- parts
- groups
- formulas
- hours
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 23
- 229920001187 thermosetting polymer Polymers 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000003822 epoxy resin Substances 0.000 claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 30
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229920003986 novolac Polymers 0.000 claims abstract description 20
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 14
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229930185605 Bisphenol Natural products 0.000 claims abstract description 8
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 8
- 125000003118 aryl group Chemical group 0.000 claims abstract description 8
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 6
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 4
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 5
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 20
- 238000002156 mixing Methods 0.000 abstract description 8
- 239000004841 bisphenol A epoxy resin Substances 0.000 abstract description 2
- 239000004843 novolac epoxy resin Substances 0.000 abstract 2
- 238000012360 testing method Methods 0.000 description 50
- 239000010703 silicon Substances 0.000 description 24
- 238000009413 insulation Methods 0.000 description 23
- 238000001723 curing Methods 0.000 description 21
- 239000002966 varnish Substances 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 14
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 13
- 230000009477 glass transition Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 9
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 8
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 8
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 7
- 239000008096 xylene Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 239000012046 mixed solvent Substances 0.000 description 6
- 125000005372 silanol group Chemical group 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- -1 tetraphenylphosphonium tetraphenylborate Chemical compound 0.000 description 3
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical class C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- MQRMTENGXFRETM-UHFFFAOYSA-N (2-methyl-1h-imidazol-5-yl)methanol Chemical compound CC1=NC=C(CO)N1 MQRMTENGXFRETM-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- AGXAFZNONAXBOS-UHFFFAOYSA-N 2-[[3-(oxiran-2-ylmethyl)phenyl]methyl]oxirane Chemical compound C=1C=CC(CC2OC2)=CC=1CC1CO1 AGXAFZNONAXBOS-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- FZZMTSNZRBFGGU-UHFFFAOYSA-N 2-chloro-7-fluoroquinazolin-4-amine Chemical class FC1=CC=C2C(N)=NC(Cl)=NC2=C1 FZZMTSNZRBFGGU-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZXTHWIZHGLNEPG-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1,3-oxazole Chemical compound O1CCN=C1C1=CC=CC=C1 ZXTHWIZHGLNEPG-UHFFFAOYSA-N 0.000 description 1
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- XAYDWGMOPRHLEP-UHFFFAOYSA-N 6-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1CCCC2OC21C=C XAYDWGMOPRHLEP-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000219289 Silene Species 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- XUCHXOAWJMEFLF-UHFFFAOYSA-N bisphenol F diglycidyl ether Chemical compound C1OC1COC(C=C1)=CC=C1CC(C=C1)=CC=C1OCC1CO1 XUCHXOAWJMEFLF-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- FJDJVBXSSLDNJB-LNTINUHCSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FJDJVBXSSLDNJB-LNTINUHCSA-N 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012971 dimethylpiperazine Substances 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- GNUALYPKLFQNJG-UHFFFAOYSA-N heptan-4-yloxy(dimethoxy)silane Chemical compound C(CC)C(O[SiH](OC)OC)CCC GNUALYPKLFQNJG-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011134 resol-type phenolic resin Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、熱硬化性樹脂組成物に関するものである。特
に本発明は、信頼性に優れたTAB用封止材料に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a thermosetting resin composition. In particular, the present invention relates to a highly reliable TAB sealing material.
最近、電子腕時計、カメラ、電卓、ICカード、ワープ
ロ、液晶テレビなどの電子機器か軽薄短小化、高機能化
の流れをたどるなかで、その製品の中枢部である半導体
素子の実装形態も変わりつつある。Recently, as electronic devices such as electronic watches, cameras, calculators, IC cards, word processors, and LCD televisions have become lighter, thinner, smaller, and more sophisticated, the mounting format of semiconductor elements, which are the core of these products, is also changing. be.
フィルムギヤリヤ(TAB>実装方式は、半導体素子の
多端子化、実装の高密度化という流れに沿ったもので時
計、電卓、サーマルヘッド、液晶デイスプレーにおける
実装に使用されており、今後の拡大が期待されている。The film gear rear (TAB) mounting method follows the trend of increasing the number of terminals in semiconductor devices and increasing the density of mounting, and is used for mounting in watches, calculators, thermal heads, and LCD displays, and is expected to expand in the future. is expected.
種4ての用途でTAB実装方式の有用性か認められなか
ら、メモリー用途などへの本格的な背反が遅れている理
由の1つとして、トランスファーモールド用封止樹脂と
同レベルの高信頼・iを有するTAB用封止材料が現在
また市場に提供されていないということか挙げられる。The usefulness of the TAB mounting method has not been recognized in all types of applications, and one of the reasons why full-fledged use of the TAB mounting method in applications such as memory has been delayed is because of the high reliability and reliability of the same level as the sealing resin for transfer molding. This may be because there is currently no TAB sealing material on the market that has i.
〈従来の技術〉
従来、TAB用封正材料どしては、エピビス型エポキシ
樹脂IJA−子中にメトキシ基を3個有する有機ケイ素
化合物、レゾール型フェノール樹脂硬化剤、有機顔f1
または無機顔料および有m溶剤を成分とする液状エポキ
シ樹脂が提案されている(特公平1−36984号公報
)。<Prior art> Conventionally, the sealing materials for TAB include an organosilicon compound having three methoxy groups in an epibis type epoxy resin IJA, a resol type phenolic resin curing agent, and an organic face f1.
Alternatively, a liquid epoxy resin containing an inorganic pigment and an organic solvent has been proposed (Japanese Patent Publication No. 1-36984).
〈]発明が解決しようとする課題〉
この先行技術をベースとする封止材で封止された半導体
素子は、トランスファーモールド用の封止樹脂で封止さ
れた半導体素子に比較すると信頼性の点では劣るものの
、電卓、液晶デイスプレーなどの信頼性に関する要求が
メモリー用途はど厳しくない民生用の分野ではすて゛に
実用化されている。[Problems to be solved by the invention] Semiconductor elements encapsulated with a encapsulating material based on this prior art have lower reliability than semiconductor elements encapsulated with encapsulating resin for transfer molding. Although it is inferior in terms of performance, it has been put into practical use in consumer applications such as calculators and liquid crystal displays, where reliability requirements are not as strict as in memory applications.
しかしなから、TAB用封n材がメモリー用途を含む産
業用分野でも広く使用されるなめには、より高度の信頼
性を有し、かつ大サイズチップにも適用可能な低応力タ
イプのTAB用封用材止材発が必要な状況になっている
。However, the reason why TAB encapsulants are widely used in industrial fields including memory applications is that they are low-stress type TABs that have a higher degree of reliability and can be applied to large-sized chips. The situation is such that it is necessary to produce a sealing material.
く課題を解決するための手段〉
発明者らは、従来提案されているTAB用封油封止剤較
して信頼性の面でより改首されるとともに、低応力性が
付与された新規な”I” A B封止剤を得るために鋭
意検討を重ねた結果、次の発明に達した。Means for Solving the Problems> The inventors have developed a new sealant for TAB that is more reliable than conventional TAB oil sealants and has low stress properties. As a result of extensive research in order to obtain an I''A B sealant, the following invention was achieved.
すなわち本発明は、
(AJ下記の一般式で表されるメチル置換ノボラック型
エポキシm脂100重量部、
(ただし、芳香環1個あたりメチル基の平均の数が1を
越え、3以下て゛あり、mはOまたは1以上20以下の
整数を表す)
FB)一般式、
H)n O
(nは0または1以上10以下の整数を表す)のビスフ
ェノールAD型エポキシ樹脂1〜900重量部、
(C)1分子中に、ケイ素原子に直接結合した下記の構
造単位を含む有機ケイ素化合物
H3
(nは0または1以上10以下の整数を表す)のビスフ
ェノールA系エポキシ樹脂、および/または一般式、
(nは2または3:Rは同一または相異なる置換基であ
って、炭素数1〜20のアルキル基、アルコキシ基、置
換アルキル基を表す;mは0〜4の整数)1〜100重
量部
(D)下記の一般式で表されるフェノールノボラック樹
脂
<R′は同一または相異なる置換基であって、炭素数1
〜10のアルキル基、アルケニル基、ビニル基、アリル
基を表す。ただし、芳香環1個あたりのR′基の数の平
均値が0以上3以下であり、kは1以上18以下の整数
を表す)10〜900重量部
(E)1分子中にゲ・イ素原子に直結した2個以上のア
ルコキシ基および/または水酸基を有する有機ケイ素化
合物0.001〜100重量部を必須成分とする熱硬化
性樹脂組成物に関するものである。That is, the present invention provides (AJ: 100 parts by weight of methyl-substituted novolac type epoxy resin represented by the following general formula, provided that the average number of methyl groups per aromatic ring is more than 1 and less than 3, (m represents O or an integer of 1 to 20) FB) 1 to 900 parts by weight of a bisphenol AD type epoxy resin of the general formula H) n O (n represents 0 or an integer of 1 to 10), (C ) A bisphenol A-based epoxy resin of organosilicon compound H3 (n represents 0 or an integer from 1 to 10) containing the following structural unit directly bonded to a silicon atom in one molecule, and/or the general formula ( n is 2 or 3; R is the same or different substituent and represents an alkyl group, alkoxy group, or substituted alkyl group having 1 to 20 carbon atoms; m is an integer of 0 to 4) 1 to 100 parts by weight ( D) Phenol novolak resin represented by the following general formula <R' is the same or different substituent, and has 1 carbon number
~10 alkyl groups, alkenyl groups, vinyl groups, and allyl groups. However, the average value of the number of R' groups per aromatic ring is from 0 to 3, and k represents an integer from 1 to 18.) 10 to 900 parts by weight. The present invention relates to a thermosetting resin composition containing as an essential component 0.001 to 100 parts by weight of an organosilicon compound having two or more alkoxy groups and/or hydroxyl groups directly bonded to elementary atoms.
以下、本発明について詳細に説明する。The present invention will be explained in detail below.
本発明において使用されるメチル置換ノボラック型エポ
キシ樹脂は、下記の一般式を有するものである。芳香環
1個あたりのメチル基の平均の数1を越え、3以下であ
るのがよく、より望ましくは1.2以上、2.5以下で
あるのかよい。The methyl-substituted novolac type epoxy resin used in the present invention has the following general formula. The average number of methyl groups per aromatic ring preferably exceeds 1 and is 3 or less, more preferably 1.2 or more and 2.5 or less.
本発明で使用されるメチル置換ノボラック型エポキシ樹
脂は、メチル置換ノボラック型フェノール樹脂とエピク
ロルヒドリンの反応による常法に従って合成できる。メ
チル置換ノボラック型フェノール樹脂は、次に例示する
ような反応によって合成される。The methyl-substituted novolak epoxy resin used in the present invention can be synthesized by a conventional method by reacting a methyl-substituted novolak phenol resin with epichlorohydrin. The methyl-substituted novolac type phenolic resin is synthesized by the following reaction.
本発明におけるビスフェノールA系エポキシ樹脂として
は、一般式
%式%)
本発明で使用されるメチル置換ノボラック型エポキシ樹
脂は、半導体封止用グレードであることが望ましく、そ
の全塩素含有量(エポキシ樹脂協会による全塩素測定法
による。アルカリ成分:IN KOH−プロピレング
リコール、溶剤ニブチルカルピトール、還流時間210
分)の値が2,000p111以下、より好ましくは1
.Oooppm以下であるものが使用される。The bisphenol A-based epoxy resin used in the present invention has a general formula (% formula %). According to the total chlorine measurement method according to the association.Alkali component: IN KOH-propylene glycol, solvent nibbutylcarpitol, reflux time 210
2,000 p111 or less, more preferably 1
.. A material having a value of Oooppm or less is used.
CH30
(nは0または1以上10以下の整数を表す)で表され
るものであり、重合度nか一定である単分散なものであ
ってもよいが、重合度nの異なる成分の混合物であって
もよい。It is expressed by CH30 (n represents 0 or an integer from 1 to 10), and may be monodispersed with a constant degree of polymerization n, but it may be a mixture of components with different degrees of polymerization n. There may be.
ビスフェノールA系エポキシ樹脂としては、より好まし
くは室温で流動性を有しているものがよく、そのエポキ
シ当量が170〜400(g/equiマ)の範囲にあ
るものがより望ましい。The bisphenol A-based epoxy resin preferably has fluidity at room temperature, and more preferably has an epoxy equivalent in the range of 170 to 400 (g/equima).
本発明におけるビスフェノールAD型エポキシ樹脂は、
一般式
(nは0または1以上10以下の整数を表す)で表され
るものであり、重合度nが一定な単分散なものであって
もよいが、重合度nの異なる成分の混合物であってもよ
い。The bisphenol AD type epoxy resin in the present invention is
It is expressed by the general formula (n represents 0 or an integer from 1 to 10), and may be monodispersed with a constant degree of polymerization n, but it may be a mixture of components with different degrees of polymerization n. There may be.
ビスフェノールAD型エポキシ樹脂はより好ましくは室
温で流動性を有しているものがよく、より低粘度である
ほど液状コンパウンドのスクリーン印刷性などの塗布適
性、ディスペンス性の点で好ましい、そのエポキシ当量
は163〜400 (g/equiマ)の範囲にあるの
が望ましい。The bisphenol AD type epoxy resin is preferably one that has fluidity at room temperature, and the lower the viscosity, the better from the viewpoint of coating suitability such as screen printability of the liquid compound and dispensability. It is desirable that it be in the range of 163 to 400 (g/equi).
同一の分子量においては、ビスフェノールA型エポキシ
樹脂よりもビスフェノールAD型エポキシ樹脂の方が低
粘度であるとともに、硬化物の機械的特性と耐熱性(ガ
ラス転移温度、長期耐熱性)がほぼ同等であることがら
、後者を単独で使用することが最も好ましいが、両者の
混合物ないし前者を単独で使用してもよい。At the same molecular weight, bisphenol AD epoxy resin has a lower viscosity than bisphenol A epoxy resin, and the mechanical properties and heat resistance (glass transition temperature, long-term heat resistance) of the cured product are almost the same. Although it is most preferable to use the latter alone, a mixture of the two or the former may be used alone.
ビスフェノールA型エポキシ樹脂とビスフェノールAD
型エポキシ樹脂ともその全塩素含有量(エポキシ樹脂協
会による全塩素測定法による)か2.0OOapl以下
、より好ましくは1.Oo oppn以下であるものか
望ましく使用される。Bisphenol A type epoxy resin and bisphenol AD
The total chlorine content (according to the total chlorine measurement method by the Epoxy Resin Association) of type epoxy resin is 2.0 OOapl or less, more preferably 1.0 OOapl or less. It is preferable to use one having a value of Oo oppn or less.
本発明の熱硬化性樹脂組成物中における成分Bの配合量
については、100重量部の成分Aに対して、1〜90
0重量部の成分Bを配合するのがよい。The blending amount of component B in the thermosetting resin composition of the present invention is 1 to 90 parts by weight per 100 parts by weight of component A.
Preferably, 0 parts by weight of component B is included.
成分Bの配合量が1重量部未満のときには、硬化後の応
力の影響によるためか耐湿熱性と信頼性が不十分となり
、−力成分Bの成分量が900重量部を超えると、硬化
物のガラス転移温度が低下するために耐湿熱性と信頼性
が悪化する。If the amount of component B is less than 1 part by weight, the moisture and heat resistance and reliability will be insufficient, probably due to the influence of stress after curing, and if the amount of force component B exceeds 900 parts by weight, the cured product will deteriorate. Humid heat resistance and reliability deteriorate due to a decrease in glass transition temperature.
成分Bの配合量は、より好ましくは、成分A100重量
部に対し、て10〜500重量部である。The blending amount of component B is more preferably 10 to 500 parts by weight based on 100 parts by weight of component A.
本発明においては、ケイ素原子に直結結合した下記のm
遣単位を1分子中に少なくとも1個以上含む含ケイ素エ
ポキシ化合物が低応力化のために使用される。In the present invention, the following m directly bonded to a silicon atom is used.
A silicon-containing epoxy compound containing at least one chain unit in one molecule is used to reduce stress.
/Rm
ボキシ化合物の配合量は、成分A100重量部、1重量
部以上100重量部以下であることが好ましい。/Rm The blending amount of the boxy compound is preferably 100 parts by weight of component A, 1 part by weight or more and 100 parts by weight or less.
本発明の含ケイ素エポキシ化合物は、分子内にS i−
H基を有するポリオルカッシロキサンオリゴマーとアリ
ルまたはビニル基を含するフェニルグリシジルエーテル
誘導体との下記の反応によって容易に合成することがで
きる。The silicon-containing epoxy compound of the present invention has Si-
It can be easily synthesized by the following reaction between a polyorcasiloxane oligomer having an H group and a phenyl glycidyl ether derivative containing an allyl or vinyl group.
(nは2.3:Rは同一または相異なる置換基であって
、炭素数1〜20のアルキル基、アルコキシ基、置換ア
ルキル基を表す−mは0〜4の整数)
この含ケイ素エポキシ化合物の配合量か100重量部を
越えると、本発明の熱硬化性樹脂組成物から得られた硬
化物のガラス転移温度がその配合量が100重量部以下
の場合に比較して著しく低下するために好ましくない。(n is 2.3; R is the same or different substituent and represents an alkyl group, alkoxy group, or substituted alkyl group having 1 to 20 carbon atoms - m is an integer of 0 to 4) This silicon-containing epoxy compound If the blending amount exceeds 100 parts by weight, the glass transition temperature of the cured product obtained from the thermosetting resin composition of the present invention will be significantly lower than when the blending amount is 100 parts by weight or less. Undesirable.
本発明の熱硬化性樹脂組成物中の含ケイ素工H2PtC
ja触媒
(ここに、m=2.3、R=
CH=CH2、
e
H2
CH=CH2)
含ケイ素エポキシ化合物の具体的な例としては、下記の
化合物を挙げることができるが特にこれらに限られた訳
ではない。Silicon-containing material H2PtC in the thermosetting resin composition of the present invention
ja catalyst (here, m = 2.3, R = CH = CH2, e H2 CH = CH2) Specific examples of silicon-containing epoxy compounds include the following compounds, but are not particularly limited to these. It's not that I was.
e
e
H2PtCja触媒
e
e
CH3
CH3
これらの化合物の中でも特に好ましく使用されるのは下
記の化合物である。e e H2PtCja catalyst e e CH3 CH3 Among these compounds, the following compounds are particularly preferably used.
本発明の熱硬化性樹脂組成物において硬化剤成分として
は、下記の一般式のフェノールノボラック樹脂が使用さ
れる。In the thermosetting resin composition of the present invention, a phenol novolak resin having the following general formula is used as a curing agent component.
(R′は同一または相異なる置換基であって、炭素数1
〜10のアルキル基、アルケニル基、ビニル基、アリル
基を表す。ただし、芳香環1個あたりのR′基の数の平
均値が0以上、3以下であり、kは1以上18以下の整
数を表す)その重合度(=に+2)については、3≦に
+2≦20の範囲にあることが望ましく、分子量の異な
る多種類の成分の混合物であってもよい。より好ましい
kの値は1≦に≦4である。(R' is the same or different substituent and has 1 carbon number
~10 alkyl groups, alkenyl groups, vinyl groups, and allyl groups. However, if the average value of the number of R' groups per aromatic ring is 0 or more and 3 or less, and k represents an integer of 1 or more and 18 or less), the degree of polymerization (=+2) is 3≦. It is desirable that the range is +2≦20, and it may be a mixture of many kinds of components having different molecular weights. More preferred values of k are 1≦ and ≦4.
kが18を越えると本発明の熱硬化性樹脂組成物の粘度
が高くなるため、作業性(ディスペンス性、スクリーン
印刷性)が悪化し問題となる。When k exceeds 18, the viscosity of the thermosetting resin composition of the present invention increases, resulting in poor workability (dispensing properties, screen printing properties), which poses a problem.
本発明のフェノールノボラック樹脂の代表的な例として
は、下記の構造のものが挙げられる。Representative examples of the phenol novolac resin of the present invention include those having the following structure.
CH2=CH3i (OC2H5)3
(1〈n≦3〉
本発明において使用される1分子中にケイ素原子に直接
結合したアルコキシ基または水酸基を2個以上有する有
機ケイ素化合物としては、次に例示するような化合物が
使用されるか、特にこれらに限られた訳ではない。CH2=CH3i (OC2H5)3 (1<n≦3> The organosilicon compounds having two or more alkoxy groups or hydroxyl groups directly bonded to a silicon atom in one molecule used in the present invention include the following examples: It is not particularly limited to these compounds.
82N (CH2) 2N)((CH2) 3si (
OCH3) 3、H2N (CH2) 3si (OC
2H5) 3H2N (CH2) 2NH(CH2)3
si (CH3) (OCH3)2、C2H50CON
HC3H6Si (OCH3)3(CH30)3SiC
2H4Si (OCH3)3C4CH2CH2Si (
OCH3)3CF3CH2Si (OCH3)3
(R=−CH2CH2CH3、
N82 Nl2
(CH2> 3 (CH2) 3HO−31
−O−3i−OH
OH0H
Ca Hs )
(t−0,1,2,3以上の整数)
CH3−5i−CH3
aHs
OH3
OH
本発明の熱硬化性樹脂組成物には、公知の硬化促進剤を
必要に応じて添加することができる。82N (CH2) 2N) ((CH2) 3si (
OCH3) 3, H2N (CH2) 3si (OC
2H5) 3H2N (CH2) 2NH(CH2)3
si (CH3) (OCH3)2, C2H50CON
HC3H6Si (OCH3)3(CH30)3SiC
2H4Si (OCH3)3C4CH2CH2Si (
OCH3)3CF3CH2Si (OCH3)3 (R=-CH2CH2CH3, N82 Nl2 (CH2> 3 (CH2) 3HO-31
-O-3i-OH OH0H Ca Hs ) (t-0, 1, 2, 3 or more integer) CH3-5i-CH3 aHs OH3 OH The thermosetting resin composition of the present invention contains a known curing accelerator. It can be added as necessary.
硬化促進剤の具体例としては、たとえば2−メチルイミ
ダゾール、2−エチル−4−メチルイミダゾール、2−
フェニル−4−メチルイミダゾール、2−フェニル−4
−メチル−5−ヒドロキシメチルイミダゾールなどのイ
ミダゾール化合物またはこれらのヒドロキシ安息香酸ま
たはジヒドロキシ安息香酸などの酸付加塩、NN′−ジ
メチルピペラジン、2,4.6−)リス(ジメチルアミ
ノメチル)フェノール、1.8ジアザビシクロ(5,4
,0>ウンデセン7.4ジメチルアミノピリジンなどの
アミン化合物またはこれらのヒドロキシ安息香酸または
ジヒドロキシ安息香酸などの酸付加塩など、トリフェニ
ルホスフィン、トリシクロヘキシルホスフィン、ビス(
ジフェニルホスフィン)メタン、トリス(2,6−シメ
トキシフエニル)ホスフィン、トリフェニルホスフィン
−トリフェニルボラン、テトラフェニルホスホニウムテ
トラフェニルボレートなどのホスフィン化合物、トリエ
チルアンモニウム−テトラフェニルボレート、ピリジニ
ウム−テトラフェニルボレートなどの含ホウ素化合物、
アルミニウムアセチルアセトナート、コバルトアセチル
アセトナートなどの金属アセチルアセトナート類が挙げ
られる。Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, and 2-methylimidazole.
Phenyl-4-methylimidazole, 2-phenyl-4
- imidazole compounds such as methyl-5-hydroxymethylimidazole or acid addition salts thereof such as hydroxybenzoic acid or dihydroxybenzoic acid, NN'-dimethylpiperazine, 2,4.6-)lis(dimethylaminomethyl)phenol, 1 .8 diazabicyclo(5,4
,0>undecene7.4 Amine compounds such as dimethylaminopyridine or acid addition salts thereof such as hydroxybenzoic acid or dihydroxybenzoic acid, triphenylphosphine, tricyclohexylphosphine, bis(
phosphine compounds such as diphenylphosphine)methane, tris(2,6-simethoxyphenyl)phosphine, triphenylphosphine-triphenylborane, tetraphenylphosphonium tetraphenylborate, triethylammonium-tetraphenylborate, pyridinium-tetraphenylborate, etc. boron-containing compounds,
Examples include metal acetylacetonates such as aluminum acetylacetonate and cobalt acetylacetonate.
上記硬化促進剤を本発明の熱硬化性樹脂組成物に添加す
る場合には、通常、エポキシ基を含む化合物の総重量1
00重量部に対して0゜1へ。When the above-mentioned curing accelerator is added to the thermosetting resin composition of the present invention, the total weight of the compound containing an epoxy group is usually 1
0°1 to 00 parts by weight.
100重量部添加される。100 parts by weight is added.
本発明の熱硬化性樹脂組成物には、他のエポキシ樹脂を
添加してもよい。その添加量は、成分A、B、Cの総重
量100重量部に対して100重量部以下であることが
好ましい。Other epoxy resins may be added to the thermosetting resin composition of the present invention. The amount added is preferably 100 parts by weight or less based on 100 parts by weight of the total weight of components A, B, and C.
他のエポキシ樹脂としては1分子あたり1個以上のエポ
キシ基を有する化合物であれば特に制限はなく、たとえ
ば、ビスフェノールFジグリシジルエーテル、フェノー
ルノホラックボリグリシジルエーテル、クレゾールノボ
ラックポリグリシジルエーテル、レゾルシンジグリシジ
ルエーテル、フェニルグリシジルエーテル、ptert
−ブチルグリシジルエーテル、ビニルシクロヘキセンオ
キシドなどが挙げられる。Other epoxy resins are not particularly limited as long as they have one or more epoxy groups per molecule; examples include bisphenol F diglycidyl ether, phenol nophorac polyglycidyl ether, cresol novolac polyglycidyl ether, and resorcin diglycidyl ether. ether, phenylglycidyl ether, ptert
-butyl glycidyl ether, vinylcyclohexene oxide and the like.
本発明の組成物には、必要に応じて希釈剤を添加するこ
とかできる。その例としては、メチルセロソルブ、エチ
ルセロソルブ、プチルセロソルブアセテートエチル力ル
ビトール、ブチルカルピトール、エチル力ルヒトールア
セテート、γ−ブチロラクトン、4−バレロラクトン、
炭酸プロピレン、キシレン、トルエン、酢酸エチル、メ
チルエチルケトン、メチルイソブチルケトンなどが挙げ
られる。A diluent can be added to the composition of the present invention if necessary. Examples include methylcellosolve, ethylcellosolve, butylcellosolve acetate, ethyllubitol, butylcarpitol, ethyllubitol acetate, γ-butyrolactone, 4-valerolactone,
Examples include propylene carbonate, xylene, toluene, ethyl acetate, methyl ethyl ketone, methyl isobutyl ketone, and the like.
本発明の組成物には必要に応じて、無機充填剤、顔料、
染料、離型剤、酸化防止剤、難燃剤、ゴムなどの各種可
視性付与剤などを添加してもよい。無機充填剤の例とし
ては、結晶性シリカ、被結晶性シリカなどの天然シリカ
、合成高純度シリカ、合成球状シリカ、タルク、マイカ
、炭酸カルシウム、窒化ケイ素、ボロンナイトライド、
アルミナなどから1!lまたは2種以上を適宜使用する
ことができる。The composition of the present invention may contain inorganic fillers, pigments,
Various visibility imparting agents such as dyes, mold release agents, antioxidants, flame retardants, and rubbers may be added. Examples of inorganic fillers include natural silica such as crystalline silica and crystallized silica, synthetic high-purity silica, synthetic spherical silica, talc, mica, calcium carbonate, silicon nitride, boron nitride,
1 from alumina etc. 1 or two or more types can be used as appropriate.
本発明の組成物の混合方法としては、必要に応じて高温
において溶融させる方法あるいは室温ないし150℃以
下の温度でニーター、プラネタリ−ミキサー 3本ロー
ル、1軸または2軸の押出機などを使用して混練する方
法が適用される。The composition of the present invention may be mixed, if necessary, by melting at a high temperature, or by using a kneader, planetary mixer, 3-roll, single-screw or twin-screw extruder, etc. at a temperature between room temperature and 150°C or less. A method of kneading is applied.
く作用〉
本発明においては、特定の構造の3官能エポキシ樹脂、
2官能性エポキシ樹脂、含ケイ素エポキシ化合物、フェ
ノールノボラック樹脂と有機ゲイ素化合物を使用するこ
とによって、従来技術に優る信頼性と低応力を有するT
AB封止材が提供される。Function> In the present invention, a trifunctional epoxy resin with a specific structure,
By using a bifunctional epoxy resin, a silicon-containing epoxy compound, a phenol novolak resin, and an organic gay compound, T
An AB encapsulant is provided.
く特性の評価方法〉
なお、本発明における特性の評価方法は次のとおりであ
る。Method for evaluating characteristics> The method for evaluating characteristics in the present invention is as follows.
1、ガラス転移温度
試験片(5am X 5 Im X 10 rm )を
作成し、熱機械的分析装置(セイコー電子工業■TMA
10型)を用いて、30〜330℃まで10℃/分で昇
温しなときの変位−温度曲線における変曲点を測定して
ガラス転移温度とした。1. Create a glass transition temperature test piece (5 am
10 type), the inflection point in the displacement-temperature curve when the temperature was not raised from 30 to 330°C at a rate of 10°C/min was measured and determined as the glass transition temperature.
2、吸水率
成形板(50關φ×3再厚)をプレッシャー・クツカー
テスト装fi(PCT)を用いて121°C1関係温度
100%、100時間吸水させた後の重量増加を測定し
て、吸水率を算出した。2. Water absorption rate The weight increase after absorbing water for 100 hours at 121°C1 relative temperature of 100% using a pressure Kutzker test equipment (PCT) was measured for the molded plate (50 mm φ x 3 thick). , the water absorption rate was calculated.
3、絶縁抵抗
アルミナ基板上に、銅膜厚30μmのクシ型$極(IP
C−3M−840B形)を作成し、ワニスを塗布、硬化
させた後、極超絶縁計(東亜電波工業■SM〜IOE型
)を用い、直流100Vの電圧を印加し、1分後の抵抗
値を測定して絶縁抵抗値とした。3. Insulation resistance A comb-shaped $ electrode (IP
C-3M-840B type), apply varnish and harden it, apply a voltage of 100 V DC using a Kyokuho megohmmeter (Toa Denpa Kogyo SM to IOE type), and check the resistance after 1 minute. The value was measured and used as the insulation resistance value.
4、シリコン板の反り
シリコン板(10miX40mX0.3m厚)に、硬化
後50四の厚さとなるようにフェスを塗布し、80℃で
50分、110℃で20分、150℃で3時間加熱硬化
させた後、表面粗さ計(東京精密■)を用いて、中央部
30面間のシリコン板の反りを測定した。4. Warping of the silicone plate Apply face to a silicone plate (10m x 40m x 0.3m thick) so that it has a thickness of 50cm after curing, and heat cure at 80°C for 50 minutes, 110°C for 20 minutes, and 150°C for 3 hours. Then, using a surface roughness meter (Tokyo Seimitsu ■), the warpage of the silicon plate between 30 surfaces at the center was measured.
〈実施例〉
実施例1
下記構造式のメチル置換ノボラック型エポキシ樹脂(日
本化薬■製、EOCN5200)(nの平均値が1.6
であり、m=2を主成分とする)
60重量部、ビスフェノールA型エポキシ樹脂(旭化成
■製、X−2317>20重量部、下記構造式の含ケイ
素エポキシ化合物
20重量部、フェノールノホラ・ンク樹脂(明相化成■
製、H−1)51重量部、トリフェニルホスフィン(北
興化学■製)1.5重量部、下記の推定構造式のγ−グ
リシドキシプロピルトリメトキシシランの加水分解縮合
物(チ・ソソ■製、YA−2)
1.5重量部、下記構造式で示されるシラノール基を含
む有機ゲイ累化合物(東し・タウコーニング・シリコー
ン■製、5H6018)R
RO−3i −0−3i −OR
\ /l l \ /
Si OOSi
/ \ l l/ \
HOO−5i −0−3i −00H
R
(R=−CH2CH2CH3、−CeHs)15重量部
を計量混合し、100℃に加熱したミキシングロールで
15分間溶溶融練を行い、冷却後粉砕を行って粉末状の
熱硬化性樹脂組成物を得た。<Example> Example 1 Methyl-substituted novolac type epoxy resin with the following structural formula (manufactured by Nippon Kayaku ■, EOCN5200) (average value of n is 1.6
(with m=2 as the main component) 60 parts by weight, bisphenol A type epoxy resin (manufactured by Asahi Kasei ■, X-2317>20 parts by weight, 20 parts by weight of a silicon-containing epoxy compound with the following structural formula, phenol nophora. Ink resin (Meisho Kasei■
51 parts by weight of triphenylphosphine (manufactured by Hokko Chemical Co., Ltd., H-1), 1.5 parts by weight of triphenylphosphine (manufactured by Hokko Chemical Co., Ltd.), a hydrolyzed condensate of γ-glycidoxypropyltrimethoxysilane (manufactured by Thi-Soso Co., Ltd.) with the estimated structural formula below. (Manufactured by Toshi Tau Corning Silicone ■, 5H6018) 1.5 parts by weight, an organic gay compound containing a silanol group represented by the following structural formula (manufactured by Toshi Tau Corning Silicone ■, 5H6018) R RO-3i -0-3i -OR \ /l l \ / Si OOSi / \ l l/ \ HOO-5i -0-3i -00H R 15 parts by weight of (R=-CH2CH2CH3, -CeHs) were weighed and mixed, and the mixture was heated on a mixing roll heated to 100°C for 15 minutes. The mixture was melt-kneaded, cooled, and then pulverized to obtain a powdery thermosetting resin composition.
この組成物を100℃に数分間加熱して溶融させた後、
真空脱気して金型に流し込み120℃で1時間、150
℃で3時間加熱して硬化させ、物性試験用の試験片を得
た。After heating this composition to 100°C for several minutes to melt it,
Vacuum degas and pour into a mold at 120℃ for 1 hour at 150℃.
It was cured by heating at ℃ for 3 hours to obtain a test piece for physical property testing.
TMA法によるガラス転移温度は160℃であり、PC
T試験(121℃、関係湿度100%、100時間)後
には142℃に低下した。The glass transition temperature by TMA method is 160°C, and PC
After the T test (121°C, relative humidity 100%, 100 hours), the temperature decreased to 142°C.
吸水率は220重量%であった。The water absorption rate was 220% by weight.
上記の粉末状の熱硬化性樹脂組成物40重量部に溶媒(
キシレン/n−ブタノール/メチルイソブチルケトン混
合溶媒、重量比15:20:65)60重量部を加え、
均一に溶解した。このワニスをクシ型電極上に塗布しく
硬化後の膜厚:1001.II+)、PCT試験(12
1°C1関係湿度100%、100時間)前後の線間の
絶縁抵抗を評価した。A solvent (
Add 60 parts by weight of xylene/n-butanol/methyl isobutyl ketone mixed solvent (weight ratio 15:20:65),
Dissolved uniformly. This varnish was applied onto the comb-shaped electrode and the film thickness after curing was 1001. II+), PCT exam (12
The insulation resistance between the wires was evaluated before and after (1°C1 relative humidity 100%, 100 hours).
PCT試験前の絶縁抵抗は5. I X 10 ”Ω、
PCT試験後の絶縁抵抗は3.5x1013Ωであった
。Insulation resistance before PCT test is 5. I x 10”Ω,
The insulation resistance after the PCT test was 3.5×10 13 Ω.
このワニスを、片面タイプのフィルムキャリア(Kap
tonの膜厚50um、接着剤厚2〇四、銅箔厚35u
m)にインナーリードボンディングされた模擬素子(線
幅、線間81JIl、パッシベーション膜なし、ビン数
−20本)に塗布し、80℃で50分、110℃で20
分、150℃で3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Kap).
ton film thickness 50um, adhesive thickness 204, copper foil thickness 35u
M) was coated on a simulated element (line width, line spacing: 81 JIl, no passivation film, number of bottles - 20) with inner lead bonding, and heated at 80°C for 50 minutes and at 110°C for 20 minutes.
It was cured by heating at 150° C. for 3 hours.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1..000時間まで追跡し、その結果をW c
: i b +プロットで整理したところ、10%不良
発生時間は370時間、50%不良発生時間は670時
間であった。The disconnection defect rate after the PCT test (121°C, relative humidity 100%) was 1. .. 000 hours and the results as W c
: i b +plot, the 10% failure occurrence time was 370 hours, and the 50% failure occurrence time was 670 hours.
このワニスをシリコン板に塗布し、硬化後シリコン板の
反りを測定したところ26μ■であった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 26 μm.
実施例2
メチル置換ノボラック型エポキシ樹脂(EOCN520
0)60重量部、ビスフェノールAD型エポキシ樹脂(
三井石油化学工業■製、R1710)20重量部を使用
、実施例1において使用した含ケイ素エポキシ化合物2
0重量部、フェノールノボラック樹脂(H−1)531
量部、トリフェニルホスフィン1.5重量部、γグリシ
ドキシプロピルトリメトキシシランの加水分解縮合物(
YA−2>1.5重量部、シラノールを含む有機ケイ素
化合物(SH6018)1.5重量部を計量混合し、実
施例1と同様の手順で粉末状の熱硬化性樹脂組成物を得
た。Example 2 Methyl-substituted novolak epoxy resin (EOCN520
0) 60 parts by weight, bisphenol AD type epoxy resin (
Silicon-containing epoxy compound 2 used in Example 1, using 20 parts by weight of R1710 manufactured by Mitsui Petrochemical Industries ■
0 parts by weight, phenol novolac resin (H-1) 531
1.5 parts by weight of triphenylphosphine, hydrolyzed condensate of γ-glycidoxypropyltrimethoxysilane (
YA-2>1.5 parts by weight and 1.5 parts by weight of an organosilicon compound containing silanol (SH6018) were weighed and mixed, and a powdered thermosetting resin composition was obtained in the same manner as in Example 1.
この組成物を100℃に数分間加熱して溶融させた後、
真空脱気して金型に流し込み、120℃で1時間、15
0°Cで3時間加熱して硬化させ、物性試験用の試験片
を得た。After heating this composition to 100°C for several minutes to melt it,
Vacuum degassed, pour into mold, and heat at 120℃ for 1 hour.
The material was cured by heating at 0° C. for 3 hours to obtain a test piece for physical property testing.
TMA法によるカラス転移温度は158℃であり、PC
T試験(121°C1関係湿度100%、100時間)
後には140°Cに低下した。The glass transition temperature by the TMA method is 158°C, and the PC
T test (121°C1 relative humidity 100%, 100 hours)
Later, the temperature dropped to 140°C.
吸水率は221重量%であった。The water absorption rate was 221% by weight.
上記の粉末状の熱硬化性樹脂組成物40重量部に溶媒(
キシレン/n−ブタノール/メチルイソブチルケトン混
合溶媒、重量比15:20:65)60重量部を加え、
均一に溶解した。このワニスをクシ型電極上に塗布しく
硬化後の膜厚:100四)、PCT試験(121’C1
関係湿度100%、100時間)前後の線間の絶縁抵抗
を評価した。A solvent (
Add 60 parts by weight of xylene/n-butanol/methyl isobutyl ketone mixed solvent (weight ratio 15:20:65),
Dissolved uniformly. This varnish was applied on the comb-shaped electrode, and the film thickness after curing: 1004), PCT test (121'C1
The insulation resistance between the wires was evaluated before and after (100% relative humidity, 100 hours).
PCT試験前の絶縁抵抗は5.3X10”Ω、PCT試
験後の絶縁抵抗は4.0 x 1013Ωであった。The insulation resistance before the PCT test was 5.3 x 10''Ω, and the insulation resistance after the PCT test was 4.0 x 1013Ω.
このワニスを、片面タイプのフィルムキャリア(Kap
tonの膜厚50u+n、接着剤厚20四、銅箔厚35
μ町)にインナーリードボンディングされた模擬素子(
線幅、線間8更、パッシベーション膜なし、ビン数−2
0本)に塗布し、80’Cで50分、110℃で20分
、150℃で3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Kap).
ton film thickness 50u+n, adhesive thickness 204, copper foil thickness 35
A simulated element (μ town) with inner lead bonding (
Line width, line spacing 8 lines, no passivation film, number of bins -2
0), and heated and cured at 80'C for 50 minutes, 110C for 20 minutes, and 150C for 3 hours.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1,000時間まで追跡し、その結果をWeib
lプロットで整理したところ、10%不良発生時間は3
50時間、50%不良発生時間は660時間であった。The disconnection defect rate after PCT test (121℃, relative humidity 100%) was tracked for up to 1,000 hours, and the results were published on Web.
When organized using the l plot, the 10% failure occurrence time is 3
50 hours, 50% failure occurrence time was 660 hours.
このワニスをシリコン板に塗布し、硬化後シリコン板の
反りを測定したところ26nであった。This varnish was applied to a silicon plate, and after curing, the warpage of the silicon plate was measured and found to be 26n.
実施例3
メチル置換ノボラック型エポキシ樹脂(EOCN520
0)60重量部、ビスフェノールA型エポキシ樹脂(X
−2317)35重量部、実施例1において使用した含
ケイ素エポキシ化合物5重量部、フェノールノボラック
樹脂(Hl)55重量部、トリフェニルホスフィン15
重量部、γ−グリシドキシプロピルトリメトキシシラン
の加水分解縮合物(YA−2)1.5重量部、シラノー
ル基を含む有機ケイ素化合物(SH6018)1.5重
量部を計量混合し、実線例1と同様の手順で粉末状の熱
硬化性樹脂組成物を得た。Example 3 Methyl-substituted novolak epoxy resin (EOCN520
0) 60 parts by weight, bisphenol A type epoxy resin (X
-2317) 35 parts by weight, 5 parts by weight of the silicon-containing epoxy compound used in Example 1, 55 parts by weight of phenol novolac resin (Hl), 15 parts by weight of triphenylphosphine
Parts by weight, 1.5 parts by weight of a hydrolyzed condensate of γ-glycidoxypropyltrimethoxysilane (YA-2), and 1.5 parts by weight of an organosilicon compound containing a silanol group (SH6018) were weighed and mixed to form a solid line example. A powdered thermosetting resin composition was obtained in the same manner as in Example 1.
この組成物を100°Cに数分間加熱して溶融させた後
、真空脱気して金型に流し込み、120°Cにて1時間
、150°Cで3時間加熱して硬化させ物性試験用の試
験片を得た。This composition was heated to 100°C for several minutes to melt it, then vacuum degassed, poured into a mold, and heated at 120°C for 1 hour and 150°C for 3 hours to harden it for physical property testing. A test piece was obtained.
TMA法によるガラス転移温度は150°Cであり、P
CT試験(121℃、関係湿度100%、100時間)
後には120℃に低下した。The glass transition temperature by TMA method is 150°C, and P
CT test (121℃, relative humidity 100%, 100 hours)
Later, the temperature dropped to 120°C.
吸水率は235重量%であった。The water absorption rate was 235% by weight.
上記の粉末状の熱硬化性樹脂組成物40重量部に溶媒(
キシレン/n−ブタノール/メチルイソブチルケトン混
合溶媒、重量比15:20:65)60重量部を加え均
一に溶解した。このワニスをクシ型電極上に塗布しく硬
化後の膜厚:100uw+)、PCT試験(121”C
1関係湿度100%、100時間)前後の線間の絶縁抵
抗を評価した。A solvent (
60 parts by weight of xylene/n-butanol/methyl isobutyl ketone mixed solvent (weight ratio 15:20:65) was added and uniformly dissolved. This varnish was applied on the comb-shaped electrode, and the film thickness after curing: 100uw+), PCT test (121"C
The insulation resistance between the wires was evaluated before and after (100% humidity, 100 hours).
PCT試験前の絶縁抵抗は5.5X10”Ω、PCT試
@後の絶縁抵抗は3.7 X I Q +3Ωであった
。The insulation resistance before the PCT test was 5.5×10”Ω, and the insulation resistance after the PCT test was 3.7×IQ+3Ω.
このワニスを 片面タイプのフィルムキャリア(K a
p t o nの膜厚5〇四、接着剤厚2〇四、銅箔
厚351Jl)にインナーリードボンディングされた模
擬素子(線幅、線間8四、パッシベーション膜なし、ビ
ン数−20本)に塗布し、80°Cで50分、110℃
で20分、150℃で3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Ka
Simulated element (line width, line spacing 84, no passivation film, number of bins - 20) with inner lead bonding to p t on film thickness 504, adhesive thickness 204, copper foil thickness 351 Jl) at 80°C for 50 minutes, then at 110°C.
The film was cured by heating at 150°C for 20 minutes and 3 hours at 150°C.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1,000時間まで追跡し、その結果をWeib
lプロットで整理したところ、10%不良発生時間は3
10時間、50%不良発生時間は620時間であった。The disconnection defect rate after PCT test (121℃, relative humidity 100%) was tracked for up to 1,000 hours, and the results were published on Web.
When organized using the l plot, the 10% failure occurrence time is 3
10 hours, 50% failure occurrence time was 620 hours.
このワニスをシリコン板に塗布、硬化後シリコン板を反
りを測定したところ31μmであった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 31 μm.
実施例4
実施例1において使用したγ−グリシドキシプロピルト
リメトキシシランの加水分解縮合物(YA−2)1.5
重量部、シラノール基を含む有機ケイ素化合物(SH6
018)1゜5重量部の代りに、γ−グリシドキシプロ
ピルトリメトキシシラン(東し−タウコーニングシリコ
ーン■製、5H6040)3.0重量部を使用し、その
他は実施例1と同様に計量混合し、実施例1と同様の手
順で粉末状の熱硬化性樹脂組成物を得た。Example 4 Hydrolyzed condensate of γ-glycidoxypropyltrimethoxysilane used in Example 1 (YA-2) 1.5
Part by weight, organosilicon compound containing silanol group (SH6
018) Instead of 1°5 parts by weight, 3.0 parts by weight of γ-glycidoxypropyltrimethoxysilane (manufactured by Toshi-Tau Corning Silicone ■, 5H6040) was used, and the rest was weighed in the same manner as in Example 1. The mixture was mixed, and a powdered thermosetting resin composition was obtained in the same manner as in Example 1.
この組成物を100℃に数分間加熱して溶融させた後、
真空脱気して金型に流し込み、120°Cで1時間、1
50℃で3時間加熱して硬化させ物性試験用の試験片を
得た。After heating this composition to 100°C for several minutes to melt it,
Vacuum degassed and poured into a mold, heated at 120°C for 1 hour.
It was heated at 50° C. for 3 hours to harden and obtain a test piece for physical property testing.
TMA法によるガラス転移温度は161℃であり、P
C,T試験(121℃、関係湿度100%、100時間
)後には141℃に低下した。The glass transition temperature by TMA method is 161°C, and P
After the C,T test (121°C, relative humidity 100%, 100 hours), the temperature decreased to 141°C.
吸水率は2.19重量%であった。The water absorption rate was 2.19% by weight.
上記の粉末状の熱硬化性樹脂組成物40重量部に溶媒(
−1rシレン/n−ブタノール/メチルイソブチルケト
ン混合溶媒、重量比15:20:65)60重量部を加
え、均一に溶解した。このワニスをクジ型@極上に塗布
しく硬化後の膜厚: 100ua) 、PCT試験(1
21℃、関係湿度100%、100時間)前後の線間の
絶縁抵抗を評価した。A solvent (
60 parts by weight of -1r silene/n-butanol/methyl isobutyl ketone mixed solvent (weight ratio 15:20:65) was added and uniformly dissolved. This varnish was applied to the top of the Kuji shape (film thickness after curing: 100 ua), PCT test (1
The insulation resistance between the wires was evaluated before and after (21° C., relative humidity 100%, 100 hours).
PCT試験前の絶縁抵抗は4.8X1.OにΩ、PCT
試験後の絶縁抵抗は1.5X113Ωであった。Insulation resistance before PCT test was 4.8X1. O to Ω, PCT
The insulation resistance after the test was 1.5×113Ω.
このワニスを、片面タイプのフィルムキャリア(Kap
tonの膜厚50μ釦、接着剤厚20μ如、銅箔厚35
μ幻)にインナーリードボンディングされた模擬素子(
線幅、線間8四、パッシベーション膜なし、ピン数−2
0本)に塗布し、80℃で50分、110℃で20分、
150℃で3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Kap).
ton film thickness 50μ button, adhesive thickness 20μ, copper foil thickness 35μ
A simulated element (μ phantom) with inner lead bonding (
Line width, line spacing 84, no passivation film, number of pins -2
0), heated to 80℃ for 50 minutes, heated to 110℃ for 20 minutes,
It was cured by heating at 150°C for 3 hours.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1,000時間まで追跡し、その結果をWeib
lプロットで整理したところ、10%不良発生時間は3
40時間、50%不良発生時間は630時間であった。The disconnection defect rate after PCT test (121℃, relative humidity 100%) was tracked for up to 1,000 hours, and the results were published on Web.
When organized using the l plot, the 10% failure occurrence time is 3
40 hours, and 50% failure occurrence time was 630 hours.
このワニスをシリコン板に塗布、硬化後シリコン板の反
りを測定したところ28μmであった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 28 μm.
比較例1
ビスフェノールA型エポキシ樹脂(X−2317)10
0重量部、フェノールノボラック樹脂(H−1)56重
量部、トリフェニルホスフィン15重量部、γ−グリシ
ドAジプロピルトリメトキシシランの加水分解線金物(
YA−2)1.5重量部、シラノール基を含む有機ケイ
素化合物(SH6018) 1.5重量部を計量混合し
、100℃で15分間溶溶融金して熱硬化性樹脂組成物
を得な。Comparative example 1 Bisphenol A type epoxy resin (X-2317) 10
0 parts by weight, 56 parts by weight of phenol novolac resin (H-1), 15 parts by weight of triphenylphosphine, hydrolysis wire metal of γ-glycid A dipropyltrimethoxysilane (
1.5 parts by weight of YA-2) and 1.5 parts by weight of an organosilicon compound containing a silanol group (SH6018) were weighed and mixed, and the mixture was melted at 100°C for 15 minutes to obtain a thermosetting resin composition.
この組成物を100℃に数分間加熱して溶融させた後、
真空脱気して金型に流し込み、120℃で1時間、15
0℃で3時間加熱して硬化させ物性試験用の試験片を得
た。After heating this composition to 100°C for several minutes to melt it,
Vacuum degassed, pour into mold, and heat at 120℃ for 1 hour.
It was heated at 0° C. for 3 hours to harden and obtain a test piece for physical property testing.
TMA法によるガラス転移温度は131℃であり、PC
T試験(121℃、関係湿度100%、100時間)後
には105℃に低下した。The glass transition temperature by TMA method is 131°C, and PC
After the T test (121°C, relative humidity 100%, 100 hours), the temperature decreased to 105°C.
吸水率は265重量%であった。The water absorption rate was 265% by weight.
上記の熱硬化性樹脂組成物40重量部に溶媒(キシレン
/n−ブタノール/メチルイソブチルケトン混合溶媒、
重量比15:20:65)603℃量部を加え、均一に
溶解した。このワニスをクシ型電極上に塗布しく硬化後
の膜厚:10〇四)、PCT試験(121°C2関係湿
度100%、100時間)前後の線間の絶縁抵抗を評価
した。 PCT試験前の絶縁抵抗は4.0×10”Ω、
PCT試験後の絶縁抵抗は45×1013Ωであった。Add 40 parts by weight of the above thermosetting resin composition to a solvent (xylene/n-butanol/methyl isobutyl ketone mixed solvent,
603° C. (weight ratio 15:20:65) was added and uniformly dissolved. This varnish was applied onto a comb-shaped electrode, and the film thickness after curing was 1004), and the insulation resistance between the wires was evaluated before and after a PCT test (121°C, 100% relative humidity, 100 hours). Insulation resistance before PCT test is 4.0×10”Ω,
The insulation resistance after the PCT test was 45×10 13 Ω.
このワニスを、片面タイプのフィルムキャリア(Kap
t o nの膜厚50um、接着剤層20μ蜀、銅箔
厚35−)にインナーリードボンディングされた模擬素
子(線幅、線間8IJI+、パッシベーション膜なし、
ピン数−20本)に塗布し、80℃で50分、110℃
で20分、150℃で3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Kap).
A simulated element (line width, line spacing 8IJI+, no passivation film,
Number of pins - 20) and heated at 80°C for 50 minutes, then at 110°C.
The film was cured by heating at 150°C for 20 minutes and 3 hours at 150°C.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1,000時間まで追跡し、その結果をWeib
lプロットで整理したところ、10%不良発生時間は2
40時間、50%不良発生時間は520時間であった。The disconnection defect rate after PCT test (121℃, relative humidity 100%) was tracked for up to 1,000 hours, and the results were published on Web.
When organized using the l plot, the 10% failure occurrence time is 2
The time to occurrence of 50% failure was 520 hours.
このワニスをシリコン板に塗布、硬化後シリコン板の反
りを測定したところ27−1であった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 27-1.
比較例2
メチル置換ノボラック型エポキシ樹脂(EOCN520
0)100重量部、フェノールノボラック樹脂(H−1
)55重量部、トリフェニルホスフィン15重量部、γ
−グリシドキシプロピルトリメトキシシランの加水分解
締金物(YA−2)1.5重量部、シラノール基を含む
有機ケイ素化合物(SH6018)1.5重量部を計量
混合し、実施例1と同様の手順で粉末状の熱硬化性樹脂
組成物を得た。Comparative Example 2 Methyl-substituted novolak epoxy resin (EOCN520
0) 100 parts by weight, phenol novolak resin (H-1
) 55 parts by weight, triphenylphosphine 15 parts by weight, γ
- 1.5 parts by weight of a hydrolyzed clamp of glycidoxypropyltrimethoxysilane (YA-2) and 1.5 parts by weight of an organosilicon compound containing a silanol group (SH6018) were weighed and mixed, and the same procedure as in Example 1 was carried out. A powdered thermosetting resin composition was obtained by the procedure.
この組成物を100℃に数分間加熱して溶融させた後、
真空脱気して金型に流し込み、120℃で1時間、15
0℃で3時間加熱して硬化させ物性試験用の試験片を得
た。After heating this composition to 100°C for several minutes to melt it,
Vacuum degassed, pour into mold, and heat at 120℃ for 1 hour.
It was heated at 0° C. for 3 hours to harden and obtain a test piece for physical property testing.
TMA法によるガラス転移温度は178℃であり、PC
T試験(121°C5関係湿度100%、100時間)
後には155℃に低下した。The glass transition temperature by TMA method is 178°C, and PC
T test (121°C5 relative humidity 100%, 100 hours)
Later, the temperature dropped to 155°C.
吸水率は2.28重量%であった6
上記の粉末状の熱硬化性樹脂組成物40重量部に溶媒(
キシレン/n−ブタノール/メチルイソブチルケトン混
合溶媒、重量比15:20:65)60重量部を加え、
均一に溶解した。このワニスをクシ型電極上に塗布しく
硬化後の膜厚:100μ和)、PCT試験(121℃、
関係湿度100%、100時間)前後の線間の絶縁抵抗
を評価した。The water absorption rate was 2.28% by weight.6 A solvent (
Add 60 parts by weight of xylene/n-butanol/methyl isobutyl ketone mixed solvent (weight ratio 15:20:65),
Dissolved uniformly. This varnish was applied onto the comb-shaped electrode, and the film thickness after curing: 100 μm) was performed, and the PCT test (121°C,
The insulation resistance between the wires was evaluated before and after (100% relative humidity, 100 hours).
PCT試験前の絶縁抵抗は4.8X10”Ω、PCT試
験後の絶縁抵抗は8.2 X I Q +2Ωであった
。The insulation resistance before the PCT test was 4.8×10”Ω, and the insulation resistance after the PCT test was 8.2×IQ+2Ω.
このワニスを、片面タイプのフィルムキャリア(Kap
tonの膜厚5〇四、接着剤層2〇四、銅箔厚35四)
にインナーリードボンディングされた模擬素子(線幅、
線間8四、パッシベーション膜なし、ピン数=20本)
に塗布し、80℃で50分、110℃で20分、150
°Cで3時間加熱し硬化させた。Apply this varnish to a single-sided film carrier (Kap).
ton film thickness 504, adhesive layer 204, copper foil thickness 354)
The simulated element (line width,
Line spacing 84, no passivation film, number of pins = 20)
50 minutes at 80℃, 20 minutes at 110℃, 150℃
It was cured by heating at °C for 3 hours.
PCT試験(121°C1関係湿度100%)後の断線
不良率を1,000時間まで追跡し、その結果をWei
b+プロットで整理したところ、10%不良発生時間は
310時間、50%不良発生時間は610時間であった
。We tracked the disconnection defect rate after PCT test (121°C1 relative humidity 100%) for up to 1,000 hours and reported the results to Wei.
When organized using a b+ plot, the 10% failure occurrence time was 310 hours, and the 50% failure occurrence time was 610 hours.
このワニスをシリコン板に塗布、硬化後シリコン板の反
りを測定したところ40u罰であった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 40 u.
比較例3
比較例2において使用したγ−グリシドキシプロビルト
リメトキシシランの加水分解締金物(YA−2)1.5
重量部、シラノール基を含む有機ケイ素化合物(SH6
018)1.5重量部の代りに、γ−グリシドキシ10
ピルトリメトキシシラン(SH6040)を使用し、そ
の他は比較例2と同様に計量混合し、実施例1と同様の
手順で粉末状の熱硬化性樹脂組成物を得た。Comparative Example 3 Hydrolyzed fastener of γ-glycidoxypropyltrimethoxysilane used in Comparative Example 2 (YA-2) 1.5
Part by weight, organosilicon compound containing silanol group (SH6
018) Instead of 1.5 parts by weight, γ-glycidoxy 10
Pyrtrimethoxysilane (SH6040) was used, and the other ingredients were measured and mixed in the same manner as in Comparative Example 2, and a powdered thermosetting resin composition was obtained in the same manner as in Example 1.
この組成物を100°Cに数分間加熱して溶融させた後
、真空脱気して金型に流し込み、120°Cで1時間、
150°Cで3時間加熱して硬化させ物性試験用の試験
片を得た。This composition was heated to 100°C for several minutes to melt it, then vacuum degassed, poured into a mold, and heated at 120°C for 1 hour.
The material was cured by heating at 150°C for 3 hours to obtain a test piece for physical property testing.
T” M A法によるカラス転移混用は178°Cであ
り、PCT試験(121°C1関係湿度100%、]、
O0時間)後には154°Cに低下した。The glass transition mixture by the T''M A method is 178°C, and the PCT test (121°C1 relative humidity 100%, ],
After 0 hours), the temperature decreased to 154°C.
吸水率は229重量%であった。The water absorption rate was 229% by weight.
上記の粉末状め熱硬化性樹脂組成物40重量部に溶媒(
キシレン/n−ブタノール、/メチルイソブチルケトン
混合温媒、重量比15:20:65)60重量部を加え
、均一に溶解した。このワニスをクシ型電極上に塗布し
く硬化後の膜厚:100μtI)、PCT試験(121
°C1関係湿度100%、100時間)前後の線間の絶
縁抵抗を評価した。A solvent (
60 parts by weight of xylene/n-butanol/methyl isobutyl ketone mixed heating medium (weight ratio 15:20:65) was added and uniformly dissolved. This varnish was applied onto the comb-shaped electrode, and the film thickness after curing: 100 μtI) was applied to the PCT test (121 μtI).
The insulation resistance between the wires was evaluated before and after (100% relative humidity, 100 hours).
PCT試験前の絶縁抵抗は5.3X10”Ω、PCT試
験後の絶縁抵抗は5.0x10nΩであったに
のワニスを、片面タイプのフィルムキャリア(Kapt
onの膜厚50un、接着剤厚20μ額、銅箔厚35μ
fI)にインナーリードボンディングされた模擬素子(
線幅、線間8μm、パッシベーション膜なし、ピン数−
20本)に塗布し、80°Cで50分、110℃で20
分、150°Cで3時間加熱し硬化させた。The insulation resistance before the PCT test was 5.3 x 10"Ω, and the insulation resistance after the PCT test was 5.0 x 10"Ω.
On film thickness 50un, adhesive thickness 20μ, copper foil thickness 35μ
fI) with inner lead bonding to the simulated element (
Line width, line spacing 8 μm, no passivation film, number of pins -
20 bottles), heated at 80°C for 50 minutes, and heated at 110°C for 20 minutes.
It was cured by heating at 150°C for 3 hours.
PCT試験(121℃、関係湿度100%)後の断線不
良率を1,000時間まで追跡し、その結果をWeib
lプロットで整理したところ、10%不良発生時間は3
00時間、50%不良発生時間は600時間であった。The disconnection defect rate after PCT test (121℃, relative humidity 100%) was tracked for up to 1,000 hours, and the results were published on Web.
When organized using the l plot, the 10% failure occurrence time is 3
00 hours, and the 50% failure occurrence time was 600 hours.
このワニスをシリコン板に塗布、硬化後シリコン板の反
りを測定したところ41μmであった。This varnish was applied to a silicon plate, and after curing, the warp of the silicon plate was measured and found to be 41 μm.
〈発明の効果〉
本発明の熱硬化性樹脂組成物から得られる硬化物は、耐
湿熱性に優れているとともに、低応力性を保持している
ことから、TAB方式によって実装されたデバイスを本
発明の熱硬化性樹脂組成物によって封止することによっ
て高い信頼性が達成される。<Effects of the Invention> The cured product obtained from the thermosetting resin composition of the present invention has excellent heat and humidity resistance and maintains low stress properties. High reliability is achieved by sealing with a thermosetting resin composition.
Claims (1)
エポキシ樹脂100重量部、 ▲数式、化学式、表等があります▼ (ただし、芳香環1個あたりメチル基の平均の数が1を
越え、3以下であり、mは0または1以上20以下の整
数を表す) (B)一般式、 ▲数式、化学式、表等があります▼ (nは0または1以上10以下の整数を表す)のビスフ
ェノールA系エポキシ樹脂、および/または一般式、 ▲数式、化学式、表等があります▼ (nは0または1以上10以下の整数を表す)のビスフ
ェノールAD型エポキシ樹脂1〜900重量部、 (C)1分子中に、ケイ素原子に直接結合した下記の構
造単位を含む有機ケイ素化合物 ▲数式、化学式、表等があります▼ (nは2または3:Rは同一または相異なる置換基であ
って、炭素数1〜20のアルキル基、アルコキシ基、置
換アルキル基を表す;mは0〜4の整数)1〜100重
量部 (D)下記の一般式で表されるフェノールノボラック樹
脂 ▲数式、化学式、表等があります▼ (R’は同一または相異なる置換基であって、炭素数1
〜10のアルキル基、アルケニル基、ビニル基、アリル
基を表す、ただし、芳香環1個あたりのR’基の数の平
均値が0以上、3以下であり、kは1以上18以下の整
数を表す)10〜900重量部 (E)1分子中にケイ素原子に直結した2個以上のアル
コキシ基および/または水酸基を有する有機ケイ素化合
物0.001〜100重量部を必須成分とする熱硬化性
樹脂組成物。[Claims] (A) 100 parts by weight of a methyl-substituted novolak epoxy resin represented by the general formula below, ▲ Numerical formulas, chemical formulas, tables, etc. ▼ (However, the average number of methyl groups per aromatic ring The number is greater than 1 and less than or equal to 3, and m represents 0 or an integer from 1 to 20.) (B) General formula, ▲Mathematical formula, chemical formula, table, etc.▼ (n is 0 or more than 1 and less than 10) bisphenol A-based epoxy resins (representing an integer), and/or bisphenol AD-based epoxy resins with general formulas, ▲mathematical formulas, chemical formulas, tables, etc.▼ (n represents 0 or an integer from 1 to 10) 1 to 900 Parts by weight, (C) An organosilicon compound containing the following structural units directly bonded to a silicon atom in one molecule ▲ Numerical formulas, chemical formulas, tables, etc. ▼ (n is 2 or 3; R is the same or different substitution group, representing an alkyl group, alkoxy group, or substituted alkyl group having 1 to 20 carbon atoms; m is an integer of 0 to 4) 1 to 100 parts by weight (D) Phenol novolak resin represented by the following general formula ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (R' is the same or different substituent and has 1 carbon number)
~10 alkyl groups, alkenyl groups, vinyl groups, allyl groups, provided that the average number of R' groups per aromatic ring is 0 or more and 3 or less, and k is an integer of 1 or more and 18 or less ) 10 to 900 parts by weight (E) Thermosetting containing as an essential component 0.001 to 100 parts by weight of an organosilicon compound having two or more alkoxy groups and/or hydroxyl groups directly bonded to a silicon atom in one molecule Resin composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16310190A JPH0453865A (en) | 1990-06-21 | 1990-06-21 | Thermosetting resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16310190A JPH0453865A (en) | 1990-06-21 | 1990-06-21 | Thermosetting resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0453865A true JPH0453865A (en) | 1992-02-21 |
Family
ID=15767194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16310190A Pending JPH0453865A (en) | 1990-06-21 | 1990-06-21 | Thermosetting resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0453865A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011125624A1 (en) * | 2010-03-31 | 2011-10-13 | 日立化成工業株式会社 | Epoxy resin based molding material for use in sealing, and electronic components and devices |
| JP2013224400A (en) * | 2012-03-22 | 2013-10-31 | Hitachi Chemical Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
-
1990
- 1990-06-21 JP JP16310190A patent/JPH0453865A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011125624A1 (en) * | 2010-03-31 | 2011-10-13 | 日立化成工業株式会社 | Epoxy resin based molding material for use in sealing, and electronic components and devices |
| JPWO2011125624A1 (en) * | 2010-03-31 | 2013-07-08 | 日立化成株式会社 | Epoxy resin molding material for sealing and electronic component device |
| JP2016166373A (en) * | 2010-03-31 | 2016-09-15 | 日立化成株式会社 | Epoxy resin molding material for sealing and electronic component device |
| JP2013224400A (en) * | 2012-03-22 | 2013-10-31 | Hitachi Chemical Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
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