JPH0456216A - Semiconductor processing device - Google Patents

Abstract

PURPOSE:To obtain the title device having improved controllability in reaction of processing by a method wherein quadrupole type mass separators are provided between a plasma generating part and a processing chamber. CONSTITUTION:In a semiconductor processing device using an electronic cyclotron resonant plasma 5, quadrupole type mass separators 13 are provided between the generator of plasma 5 and a workpiece 7. For example, a quadrupole type mass separator group 11, which is formed by assembling a plurality of the quadrupole type separators 13, is provided. The various ions grown in plasma 5 are diffused into the quadrupole type mass separator group 11, and at that time, as the voltage consisting of + or -(U+V coswt) is applied to each quadrupole mass separator device 13 of the quadrupole type mass separator group 11 so that specific ions can be passed through, specific ions only pass through the quadrupole mass separator group 11, a mass-separated ion stream 12 is formed, and the ions reach the workpiece 7, and a work reaction is created.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention relates to electron cyclotetratron resonance plasma (hereinafter referred to as E
The present invention relates to a semiconductor processing device using OR plasma.

[Conventional technology]

FIG. 2 shows a conventional semiconductor processing apparatus. In the figure, l
is microwave power, 2 is a gas inlet, 3 is a magnetic field generation coil, 4 is a quartz window for introducing microwaves, 5 is plasma, 6
1 is a discharge chamber and a processing chamber, 7 is a workpiece, 8 is a processing stage, 9 is an insulator, and 10 is an exhaust port.

Next, let's MQ@ about the operation. The discharge chamber and processing chamber 6 are
Next, gas is introduced from the gas introduction section 2 and the discharge chamber and processing chamber 6 are evacuated through the exhaust port IO.
10' Torr to I x 10-'' Torr.

Next, microwave power 1 is applied through the quartz window 4, and at the same time a magnetic field is generated by the magnetic field generating coil 3, thereby starting discharge and generating plasma 5.

Various ions generated in this plasma 5 reach the workpiece 7 and etch the workpiece.

[Problem to be solved by the invention]

In conventional equipment, all of the various ions generated in the plasma reach the workpiece and participate in the etching reaction; however, all types of ions effectively affect the etching reaction. Not that I will.

For example, when etching silicon using OF4 gas, OF”@soy:・01~0
Various ions such as +F+ are generated. Among these ions, only r is effective for processing silicon.
Other ions have the effect of damaging the processing reaction yjt1m.

Therefore, processing speed of silicon using CF4 gas is extremely low.

As shown in the above example, all the ions in the plasma are involved in the processing reaction, making it difficult to control the processing reaction in conventional equipment.This invention solves the above problems. This was developed to solve this problem, and the purpose is to obtain a device with improved controllability of processing reactions compared to conventional types.

[Means to solve the problem]

The semiconductor processing apparatus according to the present invention has a structure in which a quadrupole mass separator group, which is a combination of a large number of quadruple tangent mass separators, is provided between the radiation chamber 12 and the processing chamber. In the semiconductor processing apparatus according to the present invention, various ions in the plasma generated in the group 11L chamber diffuse into the quadrupole mass separator group. Here, the state of the quadrupole mass separator group is set so that only specific ions can pass through, and as a result, only specific ions can pass through this quadrupole mass separator group and be unprotected. It reaches the workpiece and causes a processing reaction.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In Figure A, 11 is a quadrupole mass separator group, 1 is a mass-separated ion stream, and the rest is the same as that of M2D.

The first part of Figure 1 is a detailed view of the quadrupole mass separator group H, which is a single quadrupole model mass separator.

FIG. 1C is a further detailed view of a single quadrupole mass separator.

In such a device, the discharge and processing chamber 6 is connected to the exhaust port 1
It is evacuated to vacuum from 0. Next, gas is introduced from the gas inlet 2, and the discharge chamber and processing chamber 6 are filled with l×10 to l×
Maintained at 10 Torr. Next, microwave power 1 is applied through the quartz window 4, and at the same time a magnetic field is generated by the magnetic field generating coil 3, thereby starting discharge and generating plasma 5. Various ions generated in this plasma 5 diffuse into the quadrupole mass separator group U.

At this time, a voltage of ±(U+VCm Wt) is applied to each quadrupole mass separator inlet of the quadrupole mass separator group H so that only specific ions can pass through. ing. As a result, only specific ions pass through the quadrupole mass separator group (2), become mass-separated ions, reach the workpiece 7, and cause a processing reaction.

〔Effect of the invention〕

As described above, according to the present invention, only the ions most suitable for the processing reaction are selected from among various ions in the plasma and can be irradiated onto the semiconductor, which is the workpiece, thereby improving the controllability of the processing reaction. However, it also has the effect of improving processing efficiency.

[Brief explanation of the drawing]

Fig. 1 shows one embodiment of the present invention. A is a cross-sectional view, an opening is a perspective view showing a quadrupole mass separator group, and an 8 is a perspective view showing a quadruple model mass separator. FIG. 2 is a sectional view of a conventional semiconductor processing device. In the figure, 1 is microwave power, 2 is a gas inlet, 3 is a coil for magnetic field generation, 4 is a quartz window for introducing microwaves, 5 is plasma, 6 is a radiation chamber and a processing chamber, 7 is a workpiece, 8 is a processing stage, 9 is an insulator, IO is an exhaust port, 11 is a quadrupole mass separator group, L is an ion flow, and B is a quadruple model mass separator. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Claims] A semiconductor processing apparatus using electron cyclotron resonance plasma, characterized in that a quadrupole mass separator is provided between a plasma generation part and a workpiece.