JPH0456355U - - Google Patents
Info
- Publication number
- JPH0456355U JPH0456355U JP1990099123U JP9912390U JPH0456355U JP H0456355 U JPH0456355 U JP H0456355U JP 1990099123 U JP1990099123 U JP 1990099123U JP 9912390 U JP9912390 U JP 9912390U JP H0456355 U JPH0456355 U JP H0456355U
- Authority
- JP
- Japan
- Prior art keywords
- bare chip
- light emitting
- light
- emitting diode
- emitting bare
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Description
第１図は本考案の実施例に係るマルチカラー発
光ダイオードの要部拡大図、第２図は本考案の実
施例に係る高輝度マルチカラー発光ダイオードを
示す断面図、第３図は本考案の実施例に係るマル
チカラー発光ダイオードに使用する赤色発光ベア
チツプを示す斜視図、第４図は本考案の実施例に
よる発光ダイオードの配光特性を示す特性図、第
５図は従来と本実施例とに共通する化合物半導体
としてＧａＰを用いた緑色ベアチツプを示す斜視
図、第６図はＧａＡｓＰを用いた従来の赤色ベア
チツプを示す斜視図、第７図は第５図および第６
図に示す２個のベアチツプを備えた従来のマルチ
カラー発光ダイオードを示す断面図、第８図は従
来のマルチカラー発光ダイオードの配線図、第９
図は化合物半導体としてＧａＡｌｓを用いた高輝
度赤色発光ベアチツプを示す斜視図、第１０図は
従来の高輝度マルチカラー発光ダイオードを示す
断面図、第１１図は第１０図に示す発光ダイオー
ドの配線図、第１２図は従来の高輝度マルチカラ
ー発光ダイオードの配光特性を示す特性図である
。
９……第１の発光ベアチツプ（ＧａＰ緑色ベア
チツプ）、１２……ｎ型層（ｎ型ＧａＡｌＡｓエ
ピタキシヤル層）、１３……ｐ型層（ｐ型ＧａＡ
ｌＡｓエピタキシヤル層）、１４……ｐ型基板（
ｐ型ＧａＡｌＡｓエピタキシヤル層）、２４……
第２の発光ベアチツプ（ＧａＡｌＡｓ緑色発光ベ
アチツプ）、７ａ……ステム、７ｂ……リードフ
レーム。
Fig. 1 is an enlarged view of main parts of a multi-color light emitting diode according to an embodiment of the present invention, Fig. 2 is a sectional view showing a high brightness multi-color light emitting diode according to an embodiment of the present invention, and Fig. 3 is a cross-sectional view of a multi-color light emitting diode according to an embodiment of the present invention. A perspective view showing a red light emitting bare chip used in a multi-color light emitting diode according to an embodiment, FIG. 4 is a characteristic diagram showing light distribution characteristics of a light emitting diode according to an embodiment of the present invention, and FIG. 6 is a perspective view showing a conventional red bare chip using GaAsP, and FIG. 7 is a perspective view showing a conventional red bare chip using GaP as a compound semiconductor common to
A cross-sectional view showing a conventional multicolor light emitting diode with two bare chips shown in the figure, FIG. 8 is a wiring diagram of a conventional multicolor light emitting diode, and FIG.
The figure is a perspective view showing a high-brightness red light-emitting bare chip using GaAls as a compound semiconductor, Fig. 10 is a sectional view showing a conventional high-brightness multicolor light-emitting diode, and Fig. 11 is a wiring diagram of the light-emitting diode shown in Fig. 10. , FIG. 12 is a characteristic diagram showing the light distribution characteristics of a conventional high brightness multicolor light emitting diode. 9...First light-emitting bare chip (GaP green bare chip), 12...n-type layer (n-type GaAlAs epitaxial layer), 13...p-type layer (p-type GaAlAs epitaxial layer)
lAs epitaxial layer), 14... p-type substrate (
p-type GaAlAs epitaxial layer), 24...
Second light emitting bare chip (GaAlAs green light emitting bare chip), 7a...stem, 7b...lead frame.
Claims (1)
してなる第１の発光ベアチツプと、ｐ型基板上に
ｐ型層及びｎ型層を順次形成して前記第１の発光
ベアチツプと異なる色の光を発光する第２の発光
ベアチツプとよりなるマルチカラー発光ダイオー
ドにおいて、 前記第１の発光ベアチツプと前記第２の発光ベ
アチツプとのいずれか一方を上下に反転させて相
互に逆方向の積層順位にした状態で前記第１の発
光ベアチツプの下面と前記第２に発光ダイオード
の下面とをそれぞれ共通のステムにダイボンデイ
ングし、 前記第１の発光ベアチツプの上面と前記第２の
発光ベアチツプの上面をそれぞれ異なつたリード
フレームにワイヤボンデイングしてなることを特
徴とするマルチカラー発光ダイオード。 (2) 前記第１の発光ベアチツプが化合物半導体
ＧａＰを用いた緑色発光ベアチツプであり、前記
第２の発光ベアチツプが化合物半導体ＧａＡｌＡ
ｓを用いた赤色発光ベアチツプであることを特徴
とする請求項１記載のマルチカラー発光ダイオー
ド。[Claims for Utility Model Registration] (1) A first light-emitting bare chip formed by sequentially forming an n-type layer and a p-type layer on an n-type substrate, and a p-type layer and an n-type layer sequentially forming the p-type layer on the p-type substrate. A multicolor light emitting diode comprising a second light emitting bare chip that is formed and emits light of a different color from the first light emitting bare chip, wherein either the first light emitting bare chip or the second light emitting bare chip is The lower surface of the first light-emitting bare chip and the lower surface of the second light-emitting diode are each die-bonded to a common stem while the first light-emitting bare chip is turned upside down and the stacking order is in the opposite direction, and the first light-emitting bare chip is A multicolor light emitting diode characterized in that the upper surface and the upper surface of the second light emitting bare chip are wire bonded to different lead frames. (2) The first light emitting bare chip is a green light emitting bare chip using a compound semiconductor GaP, and the second light emitting bare chip is a green light emitting bare chip using a compound semiconductor GaAlA.
2. The multicolor light emitting diode according to claim 1, wherein the multicolor light emitting diode is a red light emitting bare chip using S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990099123U JPH0456355U (en) | 1990-09-21 | 1990-09-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990099123U JPH0456355U (en) | 1990-09-21 | 1990-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0456355U true JPH0456355U (en) | 1992-05-14 |
Family
ID=31840819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990099123U Pending JPH0456355U (en) | 1990-09-21 | 1990-09-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0456355U (en) |
-
1990
- 1990-09-21 JP JP1990099123U patent/JPH0456355U/ja active Pending
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