JPH04567B2 - - Google Patents
Info
- Publication number
- JPH04567B2 JPH04567B2 JP20301083A JP20301083A JPH04567B2 JP H04567 B2 JPH04567 B2 JP H04567B2 JP 20301083 A JP20301083 A JP 20301083A JP 20301083 A JP20301083 A JP 20301083A JP H04567 B2 JPH04567 B2 JP H04567B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- temperature
- complex
- metal
- zirconium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000012266 salt solution Substances 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 19
- 239000007858 starting material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- -1 transition metal alkoxides Chemical class 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 2
- 238000000975 co-precipitation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003623 transition metal compounds Chemical class 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
産業上の利用分野
本発明は、温度センサとして広く用いられてい
る負の抵抗温度係数を持つサーミスタ用酸化物半
導体の製造方法に関するものである。
従来例の構成とその問題点
従来、負の抵抗温度係数を有する市販の汎用サ
ーミスタの製造方法は、他のセラミツクスの製造
工程と同様、目的とする金属の酸化物を出発原料
とし、目的組成に配合し、これを湿式混合・仮
焼・湿式粉砕・造粒・成形・焼成という工程を経
るのが一般的である。ここで出発原料は、金属を
酸で溶解した後アルカリで中和し水酸化物として
さらにこれを焙焼後粉砕して得たものか、金属を
高温で気化させ気相酸化させたものを用いてい
る。
ところが、近年、均質で高純度でしかも微粒子
粉体を得ることを目的として液相を利用した原料
調製法が注目され、実用化されてきた。その中で
も共沈法、金属アルコキシド法の化学的な方法が
特に注目され、これらの方法で得られたチタン酸
バリウムは均質高純度でしかも100Å程度の微粒
子であり、反応性が高く従来より焼結温度が下が
り、緻密体が得られる等の効果があり、PTCサ
ーミスタ、コンデンサへの利用が検討されてい
る。ところが、これらの方法のサーミスタ材料の
適用については、まず共沈法では金属元素により
PHによつて金属イオン水酸化物の沈殿条件が異な
ること、また中和剤によつて再溶解すること（ア
ンミン錯体等）等均質で化学量論の粉体を得るこ
とが困難であつた。また、金属アルコキシド法で
は、遷移金属アルコキシドは有機溶媒に対する溶
解度が小さく、不安定で出発原料として不適当で
ある。そこで、ほとんどすべての金属と安定な錯
体を生成し、しかも生成した錯体が化学的にも熱
的にも極めて安定だと言われるアセチルアセトナ
ト法が現在検討中であるが、まだ確立されたもの
ではない。さらに、共沈剤としてカルボン酸を用
いる方法としてシユウ酸塩法が考えられるが、目
的とする元素の一つであるクロムのシユウ酸塩は
同定された事実はなく、液相を利用してサーミス
タ用酸化物半導体の出発原料となる遷移金属化合
物を得る方法は確立されていない。
発明の目的
本発明は上記問題点に鑑みてなされたもので、
液相法を利用した遷移金属化合物を出発原料とし
たサーミスタ用酸化物半導体の製造方法を提供す
ることを目的としたものである。
発明の構成
本発明のサーミスタ用酸化物半導体の製造方法
は、目的とする金属元素の組成比をした金属塩溶
液にエチレンジアミン四酢酸を添加し複合錯体を
形成させ、これから得た錯体粒子を出発原料とし
サーミスタ用酸化物半導体を得ようとするもので
ある。
実施例の説明
以下、本発明の一実施例について説明する。
市販の硝酸マンガン、硝酸ニツケル、硝酸クロ
ムを溶解させ、金属元素にして、Mn：Ni：Cr＝
85.0：7.5：7.5原子％になるよう混合溶液を作成
する。この溶液のPHは２以下に保つ。次に、この
混合溶液に対して金属元素を総計した等モル以上
のエチレンジアミン四酢酸（そのイオンはY4-と
示す。）を加える。この溶液PHを（NH4）2CO3を
用いてPH６に調整する。このPH調整の段階で微分
パルスポーラログラフイーにより、まずCrY-が、
さらにNiY2-、MnY2-のイオン種と、複合した
イオン種の形成が確認された。ここで、エチレン
ジアミン四酢酸イオンの化学式および本発明に挙
げている元素との錯体の解離定数を次に示す。
Γ エチレンジアミン四酢酸イオン（Y4-）
Γ 錯体の解離定数（Ｉ＝１）
ScY-：23.1、TlY-：17.3、VX-：22.5、
CrY-：24、MnY2-：14.0、FeY-：24.2
（Ｉ＝０）、COY2-：16.3、NiY2-：18.6、
CuY2-：17.8、ZnY2-：16.7、AlY-：16.1、
ZrY-：29.9。
そして、解離定数が大きい程、錯体を形成しや
すい。従つて、この溶液でもCrY-が最も形成さ
れやすいのである。このPH調整後の溶液を凍結乾
燥法を用いて高純度微粉末粒子を得た。この粒子
の粒径は、約100μｍであつた。また、熱分析結
果では、従来の炭酸マンガンと酸化ニツケルおよ
び酸化クロムを用いたものに比べて固相反応開始
温度は約300℃低下した。この粉体を用いて空気
中で1000℃〜1150℃で焼成したものと、従来のも
のとの電気特性の比較を下記の表に示す。ここ
で、電気特性は25℃での比抵抗とサーミスタ定数
であるＢ定数を示した。また、併せて焼結密度を
示した。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method of manufacturing an oxide semiconductor for a thermistor, which has a negative temperature coefficient of resistance and is widely used as a temperature sensor. Conventional structure and its problems Conventionally, the manufacturing method for commercially available general-purpose thermistors with a negative temperature coefficient of resistance has been similar to the manufacturing process of other ceramics, using an oxide of the target metal as a starting material and adjusting the target composition. It is common to blend the ingredients and go through the steps of wet mixing, calcination, wet pulverization, granulation, molding, and firing. The starting raw material used here is one obtained by dissolving the metal in an acid, neutralizing it with an alkali, roasting and pulverizing the hydroxide, or vaporizing the metal at high temperature and oxidizing it in the gas phase. ing. However, in recent years, raw material preparation methods using a liquid phase have been attracting attention and being put into practical use for the purpose of obtaining homogeneous, highly pure, and finely divided powders. Among these, chemical methods such as the coprecipitation method and the metal alkoxide method have attracted particular attention, and the barium titanate obtained by these methods is homogeneous and highly pure, and has fine particles of about 100 Å, and is highly reactive and more difficult to sinter than conventional methods. It has the effect of lowering the temperature and producing a dense body, and its use in PTC thermistors and capacitors is being considered. However, when applying these methods to thermistor materials, the coprecipitation method first requires the use of metallic elements.
It has been difficult to obtain a homogeneous and stoichiometric powder due to the fact that the precipitation conditions of metal ion hydroxides differ depending on the pH, and the re-dissolution with a neutralizing agent (ammine complex, etc.). Furthermore, in the metal alkoxide method, transition metal alkoxides have low solubility in organic solvents and are unstable, making them unsuitable as starting materials. Therefore, the acetylacetonato method, which generates stable complexes with almost all metals and is said to be extremely stable both chemically and thermally, is currently under consideration, but there is no established method yet. isn't it. Furthermore, the oxalate method is considered as a method of using carboxylic acid as a coprecipitant, but oxalate of chromium, one of the target elements, has not been identified, and thermistor is produced using the liquid phase. There is no established method for obtaining transition metal compounds that serve as starting materials for oxide semiconductors. Purpose of the invention The present invention has been made in view of the above problems, and
The object of the present invention is to provide a method for manufacturing an oxide semiconductor for a thermistor using a transition metal compound as a starting material using a liquid phase method. Structure of the Invention The method of manufacturing an oxide semiconductor for a thermistor of the present invention involves adding ethylenediaminetetraacetic acid to a metal salt solution having a desired composition ratio of metal elements to form a composite complex, and using the complex particles obtained from this as a starting material. The purpose is to obtain an oxide semiconductor for use in a thermistor. DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below. Commercially available manganese nitrate, nickel nitrate, and chromium nitrate are dissolved to form metal elements, and Mn:Ni:Cr=
Create a mixed solution so that the ratio is 85.0:7.5:7.5 atomic%. Keep the pH of this solution below 2. Next, to this mixed solution, ethylenediaminetetraacetic acid (the ion is indicated as Y 4- ) is added in an amount equal to or more than the total amount of the metal elements. The pH of the solution is adjusted to 6 using (NH 4 ) 2 CO 3 . At this stage of pH adjustment, CrY - is first
Furthermore, the formation of ionic species such as NiY 2- and MnY 2- and complex ionic species was confirmed. Here, the chemical formula of ethylenediaminetetraacetic acid ion and the dissociation constant of its complex with the elements listed in the present invention are shown below. Γ Ethylenediaminetetraacetic acid ion (Y 4- ) Dissociation constant of Γ complex (I=1) ScY - : 23.1, TlY - : 17.3, VX - : 22.5, CrY - : 24, MnY 2- : 14.0, FeY - : 24.2 (I=0), COY 2- : 16.3, NiY 2- : 18.6, CuY 2- : 17.8, ZnY 2- : 16.7, AlY- : 16.1,
ZrY- : 29.9. The larger the dissociation constant, the easier it is to form a complex. Therefore, CrY - is most likely to be formed in this solution as well. High-purity fine powder particles were obtained from this pH-adjusted solution using a freeze-drying method. The particle size of the particles was approximately 100 μm. Additionally, thermal analysis results showed that the solid phase reaction initiation temperature was approximately 300°C lower than that of the conventional method using manganese carbonate, nickel oxide, and chromium oxide. The table below shows a comparison of the electrical properties between the powder fired at 1000°C to 1150°C in air and the conventional one. Here, the electrical characteristics are the specific resistance at 25°C and the B constant, which is the thermistor constant. In addition, the sintered density is also shown.
【表】
表に示すように、本発明例によれば低温での焼
成にもかかわらず緻密なセラミツクが得られた。
また、結晶粒径は、従来例では５〜20μｍであつ
たが、本発明の方法によれば１〜5μｍと非常に
均一な結晶が得られた。
発明の効果
以上のように本発明のサーミスタ用酸化物半導
体の製造方法によれば、従来よりも低温でしかも
緻密で電気特性にも優れたサーミスタを得ること
ができる。また、サーミスタ製造工程においても
仮焼・粉砕といつた工程を省略することができ
る。従つて、不純物が混入する工程がなくなり、
高純度で微粉末の出発材料が得られるため、高精
度・高信頼性のサーミスタを得ることができる。
また、この方法は使用温度が150℃までの汎用サ
ーミスタだけでなく、200℃〜700℃で使用する
中・高温サーミスタを得る製造方法としても有効
である。特に、中・高温で安定なサーミスタを得
るためには、1500℃〜1600℃の高温で焼成する必
要があり、この本発明での方法によれば1200℃〜
1300℃の焼成温度でよく省エネルギーの点でも有
効である。
なお、上記実施例ではMn−Ni−Crの３成分系
について示したが、その応用範囲はエチレンジア
ミン四酢酸が安定な錯体を形成しやすいため、ア
カンジウム、タリウム、バナジウム、クロム、マ
ンガン、鉄、コバルト、ニツケル、銅、亜鉛など
の3d遷移金属、アルミニウム、ジルコニウムの
元素の中から組合せた少なくとも２種類の金属酸
化物（ただし、アルミニウムとジルコニウムのみ
の組合せを除く。）に適用可能であることを実験
により確認した。
以上のように本発明の製造方法によれば、高純
度で緻密なセラミツクでしかも高精度・高信頼性
のサーミスタを得ることができ、また応用性の面
からも産業上の価値は高いものである。[Table] As shown in the table, according to the examples of the present invention, dense ceramics were obtained despite firing at a low temperature.
Further, the crystal grain size was 5 to 20 μm in the conventional example, but according to the method of the present invention, extremely uniform crystals with a diameter of 1 to 5 μm were obtained. Effects of the Invention As described above, according to the method for producing an oxide semiconductor for a thermistor of the present invention, a thermistor that is denser and has excellent electrical properties can be obtained at a lower temperature than conventional methods. Furthermore, steps such as calcination and pulverization can be omitted in the thermistor manufacturing process. Therefore, there is no process that introduces impurities,
Since a starting material of high purity and fine powder can be obtained, a thermistor with high precision and high reliability can be obtained.
Furthermore, this method is effective not only for producing general-purpose thermistors whose operating temperature is up to 150°C, but also as a manufacturing method for producing medium- and high-temperature thermistors that can be used at temperatures between 200°C and 700°C. In particular, in order to obtain a thermistor that is stable at medium and high temperatures, it is necessary to bake at a high temperature of 1500°C to 1600°C, and according to the method of the present invention, the temperature is 1200°C to 1200°C.
The firing temperature is 1300℃, which is effective in terms of energy saving. In addition, although the above example shows a three-component system of Mn-Ni-Cr, its application range is that ethylenediaminetetraacetic acid easily forms a stable complex, so it can be applied to acandium, thallium, vanadium, chromium, manganese, iron, cobalt. , 3D transition metals such as nickel, copper, and zinc, aluminum, and zirconium. Confirmed by. As described above, according to the manufacturing method of the present invention, it is possible to obtain a thermistor made of highly pure and dense ceramic with high precision and high reliability, and it also has high industrial value in terms of applicability. be.
Claims (1)
ム、マンガン、鉄、コバルト、ニツケル、銅、亜
鉛の3d遷移金属とアルミニウムとジルコニウム
の元素の中から組合せた少なくとも２種類（ただ
し、アルミニウムとジルコニウムのみの組合せを
除く。）金属酸化物の焼結混合物を得るために、
目的とする金属塩溶液にエチレンジアミン四酢酸
を添加し複合錯体を形成させ、これを出発粉体原
料とすることを特徴とするサーミスタ用酸化物半
導体の製造方法。1 At least two combinations of the 3D transition metals scandium, thallium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, and zinc and the elements aluminum and zirconium (excluding combinations of only aluminum and zirconium. ) to obtain a sintered mixture of metal oxides,
A method for producing an oxide semiconductor for a thermistor, which comprises adding ethylenediaminetetraacetic acid to a target metal salt solution to form a composite complex, and using this as a starting powder raw material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203010A JPS6094702A (en) | 1983-10-28 | 1983-10-28 | Method of producing oxide semiconductor for thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203010A JPS6094702A (en) | 1983-10-28 | 1983-10-28 | Method of producing oxide semiconductor for thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094702A JPS6094702A (en) | 1985-05-27 |
| JPH04567B2 true JPH04567B2 (en) | 1992-01-08 |
Family
ID=16466837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203010A Granted JPS6094702A (en) | 1983-10-28 | 1983-10-28 | Method of producing oxide semiconductor for thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094702A (en) |
-
1983
- 1983-10-28 JP JP58203010A patent/JPS6094702A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6094702A (en) | 1985-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0916438B1 (en) | Nickel powder and process for preparing the same | |
| JP2598786B2 (en) | Method for producing perovskite-based functional ceramic | |
| JPH0798680B2 (en) | Method for producing raw material powder of lead-based perovskite ceramics | |
| KR102016916B1 (en) | Method for producing LLZO oxide solid electrolyte powder | |
| JPH04567B2 (en) | ||
| Junmin et al. | Activation‐Induced Pyrochlore‐to‐Perovskite Conversion for a Lead Magnesium Niobate Precursor | |
| JP3465403B2 (en) | Method for producing oxide electrode sintered body | |
| KR20180066511A (en) | sintered compounds for negative thermal coefficient thermister and the fabricating method thereof | |
| JP2663944B2 (en) | Manufacturing method of dielectric resonator material | |
| JPH07297009A (en) | Positive temperature coefficient thermistor and manufacturing method thereof | |
| JPS62138354A (en) | Manufacture of readily sinterable lead-containing oxide powder | |
| JP2011073947A (en) | Multiple oxide and method for producing the same | |
| JPS62182114A (en) | Production or readily sinterable lead-containing oxide powder | |
| JPH0556287B2 (en) | ||
| JP2005239466A (en) | Hollow spherical aggregate composite metal oxide fine particles and method for producing the same | |
| JPS63288912A (en) | Production of inorganic oxide superconductor | |
| JPH0818867B2 (en) | Method for producing perovskite ceramics containing zirconium | |
| JPH0476322B2 (en) | ||
| JPS6325265A (en) | Manufacture of high density bznt base ferroelectric ceramic | |
| JPS63117914A (en) | Method for producing metal oxide powder for PTC thermistor | |
| JP2987423B2 (en) | Manufacturing method of dense sintered body | |
| JPS63288911A (en) | Production of high temperature superconductor | |
| JPH02107506A (en) | Production of coprecipitated powder | |
| JPS62138353A (en) | Manufacture of readily sinterable lead-containing oxide powder | |
| JPH03242323A (en) | Production of readily sintered lead-containing oxide powder |