JPH0457327A - Charged beam working equipment - Google Patents

Abstract

PURPOSE:To realize uniform reactive etching in an arbitrary position in a wide region, by providing a stage, a reactive gas supplying means, a power supply controller for driving them, etc., supplying constant reaction gas to a part to be worked, and selecting a working position by moving the stage. CONSTITUTION:Means 16-20 for supplying reaction gas to a part 13 to be worked so as to be symmetric with respect to the irradiation axis of an ion beam 12, a stage 22 of XYZ three-axis constitution for mounting an object 13 to be worked, and a means 23 for detecting the height of a table 21 on the stage 22 are provided. By supplying the reactive gas to the part 13 to be worked so as to be symmetric with respect to the irradiation axis of the ion beam 12, the gas distribution on the part 13 to be worked is made uniform, and the uniform working is enabled without generating deviation in the working shape. In the case where the working is performed by moving the stage, the stage height is detected by detecting the flow rate of the reactive gas, and the gas is supplied under the same condition. Thereby the gas concentration us made constant on the part 13 to be worked, and the working is always progressed at the same speed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a reactive etching method using a charged beam and a reactive gas. The present invention relates to a charged beam machining apparatus and a machining method thereof, which enable uniform machining even when machining is performed at any arbitrary position in a wide range of areas by constant machining and stage movement.

[Conventional technology]

2. Description of the Related Art In recent years, semiconductor devices such as LSIs have become more highly integrated and functional, and wiring and elements are becoming more multilayered. For this reason, semiconductor devices in the development process do not necessarily operate as designed, and for the purpose of debugging LSI designs or analyzing defects in the manufacturing process, it is necessary to cut the wiring on the chip or connect arbitrary parts. There is an increasing demand for circuit modification in a short period of time. Such circuit modification requires processing at several dozen locations on one LSI, and processing must be performed at high speed and with a high yield of nearly 100%.

Among these methods, sputtering methods have traditionally been used to cut wiring, in which atoms of the wiring material are ejected using a focused ion beam, but this method has a slow processing speed and is not suitable for There were problems such as low selectivity and high processing speed for inclined surfaces, making it difficult to accurately process the unevenness of each layer.

On the other hand, chemically reactive etching, which combines a reactive gas and a charged beam such as a focused ion beam or electron beam, allows processing to be performed at a speed several ten times faster than sputtering, and the type of reactive gas can be selected. Therefore, the selectivity for the lower layer of the layer to be processed can be increased, and even a sample with severe irregularities can be processed with high precision without damaging the lower layer.

Here, as an example of using reactive etching locally at the irradiation area of a charged beam such as a focused ion beam or electron beam, the reactive gas is supplied from a nozzle located diagonally above the processed area. There is a method in which the workpiece is covered with a subchamber and the subchamber is filled with a reactive gas, and the former method is disclosed in JP-A-1-169858.
The latter is described in the journal Cub. Vacuum, Science.

AND, TECHNOLOGY, B5 (1), January/February
1987, pages 423 to 426 (J own
al of Vacuum 5science and
Technology, B 5 (1) yJ an/
Feb 1987 P423-426).

[Problem to be solved by the invention]

Journal, Cub. Vacuum, Science.

AND, TECHNOLOGY, B5 (1), January/February
1987, pages 423 to 426 (J own
al of Vacuum 5science and
Technology, B 5 (1) +Jan/
In the subchamber method discussed in Feb 1987 P423-426), the stage on which the workpiece is mounted is installed in the subchamber, and the processing position is not moved by moving the stage. There are issues that only other machining companies can consider.

The purpose of the present invention is to always supply a uniform and constant reactive gas to the workpiece, to move the workpiece by stage movement, and to ensure a uniform supply of reactive gas even when the workpiece is processed at any position over a wide area. An object of the present invention is to provide a charged beam processing device that enables processing.

[Means to solve the problem]

In order to achieve the above object, in the charged beam processing apparatus of the present invention, a means for supplying a reactive gas to the workpiece symmetrically with respect to the ion beam irradiation axis and an XYZ system on which the workpiece is mounted.
The stage has an a-axis configuration and means for detecting the height of the table on the stage. Alternatively, it has a subchamber that covers the workpiece, a means for supplying a reactive gas into the subchamber, a stage for moving the workpiece within the subchamber, and a means for detecting the pressure inside the subchamber. .

[Effect]

When actually modifying an LSI chip, the wiring is opened and cut at several dozen locations over a wide area, so
Moving the processing position using the Y stage is essential.

Then, reactive gas was sprayed from a nozzle diagonally above the processing area.

Since the gas supply is directional to the workpiece, the machining shape is uneven, and experiments have shown that even if the gas flow rate is constant, the machining speed changes due to changes in the distance between the nozzle and the sample. . The experimental results are shown in Figure 11 (
The experimental results shown in FIG. 11 are under the conditions shown in FIG. 12.

). According to these results, if the nozzle is simply fixed and the processing position is moved using an It becomes difficult to obtain desired machining results in the machining section.

Therefore, by supplying the reactive gas to the processed part symmetrically with the ion beam irradiation axis as in the present invention, the gas distribution on the processed part becomes uniform, and the processed shape is not biased. Uniform processing is possible. Furthermore, when moving the workpiece by moving the stage and performing machining at any position, the stage height and reactive gas flow rate can be detected, and if the gas is supplied under the same conditions, the The gas concentration remains constant and machining can always be performed at the same speed.

In addition, when gas is supplied from the subchamber, by closing the lower part of the subchamber with the top surface of the table on which the workpiece is mounted, the stage can be driven without exposing the stage cantering part to the reactive gas atmosphere. Uniform machining can be achieved by detecting the gas pressure and performing machining under the same gas pressure conditions.

〔Example〕

Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 shows an apparatus configuration diagram of a first embodiment of the present invention.

This first embodiment is an example in which a focused ion beam is used as the charged beam, and the same process can be performed using an electron beam.

Inside the IB chamber 2, an ion beam 1 is emitted from an ion source 5.
an extraction electrode 6 for extracting the ion beam 2; a front-stage focusing lens 7 for focusing the extracted ion beam 12;
Aperture 8, post-focusing lens 9, and ion beam 1
There is a focused ion beam optical system consisting of a deflector electrode 10 that deflects the ion beam 2, and is controlled by an ion beam controller (not shown). Also, at the bottom of IB chamber 2,
An orifice 11 is provided for passing the ion beam 12.

The main chamber 1 includes a table 21 on which a sample 13 is mounted.
, a stage 22 with an XYZ three-axis configuration, a nozzle 14 for spraying a reactive gas onto the sample, and a gas supply pipe 17 .
A reactive gas cylinder 20 is connected via a valve 18 and a mass flow controller 19.

In addition, the IB chamber 2 and the main chamber 1 are connected to exhaust pipes 4.4', 4'' and valve 3 by a vacuum pump (not shown).
．． It has a configuration that allows exhaust to be exhausted through 3' and 3''.

The nozzle 14 has a through hole 15 in the center through which the ion beam 12 passes, and several injection ports 16 are provided on the coaxial circumference of the through hole 15 for spraying reactive gas onto the processed portion of the sample 13. As a result, the reactive gas is sprayed uniformly from the diagonal upper circumference of the sample 13, so that the horizontal directionality in gas supply by the nozzle is canceled out, and the gas distribution becomes uniform over the workpiece.

Further, a capacitance type sensor 23 is provided in the nozzle 14, and on the stage side, a table 21 on which the sample 13 is mounted is extended to a position opposite to the capacitance type sensor 23.

In this example, when using a sensor (displacement meter) whose output voltage changes linearly with respect to capacitance, nozzle 1
A sensor (switch) that corrects the distance "0" point between 4 and sample 13, and the output voltage changes rapidly at a constant capacitance.
When using a sensor, the sensor output displacement is adjusted so that it occurs when the desired distance between the nozzle 14 and the sample 13 is reached.

A method of controlling the distance between the sample 13 and the nozzle 14 according to this embodiment will be explained.

First, an adjustment mechanism (not shown) is provided on the stage 22 to align the Y-axis, the Y-axis, and the upper surface of the sample 13 in parallel during assembly. The sample 13 is moved by the XY movement of the stage 22.
The desired upper part to be processed is brought directly below the irradiation part of the ion beam 12. After the movement in the XY force direction is completed, the table 21
is raised to bring the sample 13 closer to the nozzle 14. At this time,
The height of the table 21 is detected by the capacitive sensor 23, and feedback is applied to a Z stage controller (not shown) to control the distance between the sample 13 and the nozzle 14 to a desired value.

After the above operation, the valve 18 is opened and the reactive gas whose flow rate is controlled by the mass flow controller 19 is supplied to the sample 13.
The ion beam 12 is irradiated and processing is started. After the machining is completed, the stage 22 moves in the XY direction to move to the next machining position. From now on, repeat this operation.

Further, FIG. 2 shows height control using another detection method.

The figure in (,) employs an autofocus method using light, in which a striped pattern on a mask 25 is projected onto a table 21 using a projector 24 using an objective lens 27, and the degree of convergence of the image is measured using an autofocus sensor (CCD). ) 28 to control the distance between the sample 13 and the nozzle 14 with high precision.

(b) In the figure, the distance between the sample 13 and the nozzle 14 is controlled with high precision by irradiating the mirror 29 on the table 21 with a laser 31 using a laser length measuring device 30 and measuring the height of the table 21. .

In either detection method, if the height of the Z-axis is controlled during the first machining by ensuring parallelism between the Y-axis, the Y-axis, and the top surface of the sample 13, it will be possible to move to the second and subsequent machining positions. By simply moving the stage 22 in the XY direction, the distance between the nozzle 14 and the sample 13 is always constant.

According to this embodiment, the supply of reactive gas to the workpiece by the nozzle is uniform, and by controlling the distance between the workpiece and the nozzle and the flow rate of the reactive gas with high precision,
The gas concentration on the workpiece remains constant, allowing uniform processing with good reproducibility even if the processing position is moved over a wide range.

FIG. 3 shows a second embodiment of the invention. This example is Y
This is effective when it is difficult to align the axis, Y-axis, and the top surface of the sample.

Capacitance type sensors 23, 23' and 23'' are provided at three locations on the circumference coaxial with the center of the nozzle shown in the first embodiment.The capacitance type sensors used here have an output voltage of This is a sensor (displacement meter) that varies linearly with respect to capacitance.The other structure and operation of this second embodiment are the same as those of the first embodiment.

A method of controlling the distance between the sample 13 and the nozzle 14 according to this embodiment will be explained.

First, the tip surface of the nozzle 14 and each capacitive sensor 23°2
3' and 23'' are on the same plane. By moving the stage 22 in the XY direction, the desired part to be processed on the sample 13 is brought directly below the irradiation part of the ion beam 12. After the direction movement is completed, the table 21
is raised to bring the sample 13 closer to the nozzle 14. At this time 3
The height of the table 21 with respect to the nozzle 14 is detected by the capacitance type sensor 23.
Control the distance between them to the desired value. After the above operations are completed,
When the valve 18 is opened, a reactive gas whose flow rate is controlled by the mass flow controller 19 is sprayed onto the sample 13, ion beam irradiation is performed, and processing is started. When the first processing is completed and the stage 22 is moved to the next processing position by XY movement, the capacitance type sensors 23, 23'2 at three locations are activated.
3", detects changes in the height and inclination of the table 21, provides feedback to a two-stage controller (not shown), and controls the nozzle 14 and sample 13 so that they are at the same distance again when stopped at the next processing position. This operation and control are repeated thereafter.Furthermore, the height of the table 21 can be detected in the same way by using an autofocus method or a laser length measuring device instead of a capacitance type sensor.

According to the present invention, the reactive gas is uniformly supplied to the workpiece by the nozzle, and the distance between the workpiece and the nozzle and the flow rate of the reactive gas are controlled with high precision. The gas concentration remains constant, and even if the processing position is moved over a wide range, uniform processing with good reproducibility can be achieved.

FIG. 4 shows a third embodiment of the invention.

3 on the circumference coaxial with the center of the nozzle 14 shown in the first embodiment
Capacitance type sensors 23, 23' and 23'' are provided at these locations.Even if the capacitance type sensors used here are the sensors (displacement meters) used in the second embodiment, It may also be a sensor (switch) whose output voltage changes rapidly due to capacitance.In addition, the two axes on the stage 22 side can be moved up and down at positions corresponding to the capacitance type sensors 23, 23' and 23''. A three-point tilt mechanism 32, 32' that performs the operation,
32". For example, a piezo is used in this tilt mechanism.The other structure and operation of this third embodiment are the same as those of the first embodiment.

A method of controlling the distance between the sample 13 and the nozzle 14 according to this embodiment will be explained.

First, the tip surface of the nozzle 14 and each capacitive sensor 23°2
3' and 23'' are on the same plane. By moving the stage 22 in the XY direction, the desired part to be processed on the sample 13 is brought directly below the irradiation part of the ion beam 12. After the direction movement is completed, the tilt mechanism 3
2. Raise the table 21 by 32', 32''. At this time, capacitance type sensors 23, 23',
23'' detects the height of the table 21 relative to the nozzle 14, and also detects the inclination of the table 21, and applies feedback to the respective tilt mechanisms 32, 32', 32'', and three capacitive sensors 23, 23'.

23" to control the height of the table 21 to a desired value. After the above operations are completed, the valve 17 is opened to spray reactive gas, whose flow rate is controlled by the mass flow controller 19, onto the sample 13, and to release ions. The beam 12 is irradiated and processing is started.When the first processing is completed and the stage 22 is moved to the next processing position by XY movement, three capacitance type sensors 23° 23', 23 ” detects fluctuations in the height of the table 21 and provides feedback to a two-stage controller (not shown) to constantly control the nozzle 14.
and the sample 13 are controlled so that they are kept parallel and at the same distance. Hereafter, this operation and control are repeated. Also table 21
The height can be similarly detected by using an autofocus method or a laser length measuring device instead of a capacitance sensor.

According to this embodiment, the supply of reactive gas to the workpiece by the nozzle is uniform, and by controlling the distance between the workpiece and the nozzle and the flow rate of the reactive gas with high precision,
The gas concentration on the workpiece remains constant, allowing uniform processing with good reproducibility even if the processing position is moved over a wide range.

FIG. 5 shows a fourth embodiment of the invention.

A pressure sensor 33 is provided in the gas supply pipe 17 to the nozzle 14 shown in the first embodiment. For example, a manometer is used as a pressure sensor. Note that the other configurations and functions of this fourth embodiment are similar to those of the first embodiment.

By moving the stage 22 in the XY direction, a desired part of the sample 13 to be processed is brought directly below the irradiation part of the ion beam 12.

After the movement in the XY force direction is completed, the valve 18 is opened to spray the sample 13 with a reactive gas whose flow rate is controlled by the mass flow controller 19, and the table 21 is raised. At this time, the pressure sensor 33 detects an increase in the pressure inside the gas supply pipe 17, and the height of the table 21 is controlled so as to obtain a desired distance between the nozzle 14 and the sample 13. After the above operations are completed, irradiation with the ion beam 12 is performed to start processing. When the first processing is completed and the stage 22 is moved to the next processing position by XY movement, reactive gas is sprayed onto the sample 13. At this time, pressure changes in the gas supply pipe 17 are detected by the pressure sensor 33, and feedback is applied to a two-stage controller (not shown) to control the height of the table 21 so that the pressure in the gas supply pipe 17 is always constant. conduct. Hereafter, this operation and control are repeated.

According to this embodiment, the supply of reactive gas to the workpiece by the nozzle is uniform, and by controlling the distance between the workpiece and the nozzle and the flow rate of the reactive gas with high precision,
The gas concentration on the workpiece remains constant, allowing uniform processing with good reproducibility even if the processing position is moved over a wide range.

FIG. 6 shows a fifth embodiment of the invention.

The nozzle 14 shown in the first embodiment is provided with a stopper roller 34, 34' and an escape mechanism 35, 35'. Note that the other structure and operation of this fifth embodiment are the same as those of the first embodiment.

By moving the stage 22 in the XY direction, a desired part of the sample 13 to be processed is brought directly below the irradiation part of the ion beam 12.

After the movement in the XY force direction is completed, the table 21 moves the nozzle 1
4 until it comes into contact with rollers 34, 34'. An escape mechanism 35, 35' is provided on the nozzle side, and the nozzle 14 is stopped by detecting an upper limit with a limit switch (not shown) at a position where the table 21 slightly pushes up the nozzle 14. After the above operations are completed, the valve 18 is opened and the reactive gas whose flow rate is controlled by the mass flow controller 19 is sprayed onto the sample 13.

Irradiation with the ion beam 12 is performed to start processing. When the stage 22 is moved in the XY direction after the first machining is completed,
This is done with the table 21 in contact with the stopper rollers 34, 34'. This operation and control are repeated thereafter.

According to this embodiment, the reactive gas is uniformly supplied to the processed part by the nozzle, the distance between the processed part and the nozzle is always fixed, and the flow rate of the reactive gas is controlled with high precision. The gas concentration on the workpiece remains constant, allowing uniform processing with good reproducibility even if the processing position is moved over a wide range.

FIG. 7 shows a sixth embodiment of the invention.

An L-shaped nozzle 36 having a through hole 15 through which the ion beam 12 passes is provided directly above the part to be processed of the sample 13, and a reactive gas is sprayed from directly above the part to be processed. According to this structure, there is no horizontal directionality in supplying the reactive gas through the nozzle, and the gas distribution becomes uniform over the workpiece. Note that the other configurations, functions, and method of controlling the distance between the nozzle 36 and the sample 13 of this sixth embodiment are the same as those of the first to fifth embodiments.

According to this embodiment, the reactive gas is uniformly supplied to the workpiece by the nozzle, and the distance between the workpiece and the nozzle and the flow rate of the reactive gas are controlled with high precision. The gas concentration at the top remains constant, allowing uniform processing with good reproducibility even if the processing position is moved over a wide range.

FIG. 8 shows a seventh embodiment of the present invention.

A flange 37 is provided at the bottom of the pipe that serves as the through hole 15 through which the ion beam 12 passes directly above the processed part of the sample 13. 21 and is structured to form a reactive gas atmosphere around the part to be processed. Further, the flange 37 is not simply a flat plate, but leaves a gap in order to make it difficult for reactive gas to flow out from the outer periphery and the through hole 15. Note that other structures, functions, and flange 37 of this seventh embodiment
The method of controlling the distance between the sample 13 and the sample 13 is the same as in the first to fifth embodiments.

According to this embodiment, the reactive gas is uniformly supplied to the workpiece, and by controlling the distance between the workpiece and the flange and the flow rate of the reactive gas with high precision, The gas concentration remains constant, allowing uniform processing with good reproducibility even when the processing position is moved over a wide range.

FIG. 9 shows an eighth embodiment of the invention.

A sub-chamber 38 having a through hole 15 through which the ion beam 12 passes is provided directly above the part to be processed of the sample 13, so that a reactive gas atmosphere is created around the part to be processed. A gap is provided between the subchamber 38 and the table 21 to prevent the gas in the subchamber 38 from escaping rapidly, allowing the stage 22 to move in the X and Y directions. Further, the gas supply amount is controlled by the mass flow controller 19 by detecting the gas pressure in the subchamber 38 using the pressure gauge 39 . Note that the other structure and operation of this eighth embodiment are the same as those of the first embodiment.

According to this embodiment, the reactive gas is uniformly supplied to the processed part, and the gas concentration on the processed part is kept constant by detecting the gas pressure in the subchamber and controlling the gas supply amount. Therefore, even if the processing position is moved over a wide range, uniform processing with good reproducibility can be achieved.

FIG. 10 shows a ninth embodiment of the invention.

A sub-chamber 40 having a through hole 15 through which the ion beam 12 passes is provided directly above the part to be processed of the sample 13, and the structure is such that a reactive gas atmosphere is created around the part to be processed. When processing the sample 13, after moving to the desired XY coordinates, the table 21 is raised and moved into the subchamber 4.
Closely connected to 0. At this time, an escape mechanism is provided on the subchamber 40 side, and the table 21 is stopped at a position where the subchamber 40 is slightly pushed up by detecting an upper limit with a limit switch (not shown). After the table 21 is stopped, the valve 18 is opened and reactive gas is supplied. At this time, the pressure gauge 39 detects the gas pressure in the subchamber 40, and the mass flow controller 19 controls the flow rate. After the gas pressure is constant, the ion beam 12 is irradiated to start processing, and when the processing is completed, the gas supply and ion beam irradiation are stopped. When moving to the next processing position, the table 21 is lowered,
After leaving the subchamber 40, movement in the XY force directions is performed. This operation and control are repeated thereafter. In addition, this 10th
The other structure and operation of this embodiment are the same as those of the first embodiment.

According to this embodiment, the reactive gas is uniformly supplied to the processed part, and the gas concentration on the processed part is kept constant by detecting the gas pressure in the subchamber and controlling the gas supply amount. Therefore, even if the processing position is moved over a wide range, uniform processing with good reproducibility can be achieved.

〔Effect of the invention〕

According to the present invention, when performing reactive etching with a charged beam, a reactive gas is applied to a processed part in a --like manner and
Since it is possible to supply a constant supply and to select the processing position by moving the stage, uniform reactive etching can be performed at any position over a wide range.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram showing the entire apparatus of Embodiment 1 of the present invention;
FIG. 2 is a diagram for explaining another detection method of Example 1,
3 is a block diagram showing a device according to a second embodiment of the present invention, FIG. 4 is a block diagram showing a device according to a third embodiment of the present invention, and FIG. 5 is a block diagram showing a device according to a fourth embodiment of the present invention. , FIG. 6 is a block diagram showing a device according to a fifth embodiment of the present invention, and FIG. 7 is a configuration diagram showing a device according to a sixth embodiment of the present invention.
8 is a block diagram showing a device according to Embodiment 7 of the present invention, FIG. 9 is a block diagram showing a device according to Embodiment 8 of the present invention, and FIG. 10 is a block diagram showing a device according to Embodiment 8 of the present invention. FIG. 11 is a diagram showing the experimental results of the nozzle-sample distance and processing speed, and FIG. 12 is a diagram showing the experimental conditions shown in FIG. 11. 1... Main chamber, 2... IB chamber, 12
...Ion beam, 13...Sample, 14.36...
Nozzle, 15... Through hole, 16... Injection port,
17...Gas supply pipe, 21...Table, 22...
Stage, 23.23', 23"... Capacitance type sensor, 24... Floodlight, 25... Mask, 26...
Half mirror 127...Objective lens, 28...Auto focus sensor, 29...Mirror, 30...Laser length measuring machine, 32, 32', 32''...Tilt mechanism,
33-Pressure sensor, 34-Roller, 37...Flange, 38.40...Subchamber, 39...Pressure car gauge. 4th inning <a) 4th inning <a) 4th inning <a) 8th inning

Claims (1)

[Claims] 1. Consists of a beam source that generates a charged beam such as an ion beam or an electron beam, a focusing optical system, a stage, a reactive gas supply means, and a power controller that drives them;
In charged beam processing equipment that supplies a reactive gas to the processed part and performs reactive etching locally at the irradiated part of the charged beam, the gas can be supplied uniformly to the processed part and can be applied to any position over a wide area. A charged beam processing device that is capable of processing and is characterized by always keeping the gas supply conditions constant. 2. As mentioned above, as a means to uniformly supply gas and enable processing at any position over a wide range, a through hole is provided in the center through which a charged beam can pass, and the coaxial circumference of the through hole is used to supply gas to the workpiece. Charged beam processing according to claim 1, characterized in that the charged beam processing is performed using a nozzle having several gas injection ports on the top thereof, and the distance between the nozzle and the workpiece and the gas flow rate are controlled with high precision. Device. 3. As mentioned above, as a means of uniformly supplying gas and making it possible to process any position over a wide area, gas is supplied to the workpiece using a nozzle with a through hole through which a charged beam can pass. 2. The charged beam processing apparatus according to claim 1, wherein the charged beam processing apparatus is characterized in that the processing is performed by spraying directly from above, and the distance between the nozzle and the workpiece and the gas flow rate are controlled with high precision. 4. As mentioned above, as a means to uniformly supply gas and enable processing at any position over a wide range, a flange with a through hole through which the charged beam can pass is provided on the workpiece, and Claim 1, characterized in that by introducing gas, a gas atmosphere is formed above the processed part, and the distance between the flange and the processed part and the gas flow rate are controlled with high precision. charged beam processing equipment. 5. As mentioned above, as a means of uniformly supplying gas and making it possible to process any position over a wide area, the part to be processed is covered with a subchamber having a through hole through which the charged beam can pass, and the subchamber is 2. The charged beam processing apparatus according to claim 1, wherein there is a minute gap between the stage and the stage on which the workpiece is placed, and the amount of gas supplied is controlled by the gas pressure in the subchamber. 6. As mentioned above, as a means of uniformly supplying gas and making it possible to process any position in a wide area, the part to be processed is covered with a sub-chamber having a through hole through which the charged beam can pass, and when moving the processing position, A gap is created between the stage on which the workpiece is placed and the subchamber, and during processing, the stage is in close contact with the subchamber, and the gas supply amount is controlled by the gas pressure in the subchamber. Charged beam processing device according to scope 1.