JPH0457631B2 - - Google Patents
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- Publication number
- JPH0457631B2 JPH0457631B2 JP58144780A JP14478083A JPH0457631B2 JP H0457631 B2 JPH0457631 B2 JP H0457631B2 JP 58144780 A JP58144780 A JP 58144780A JP 14478083 A JP14478083 A JP 14478083A JP H0457631 B2 JPH0457631 B2 JP H0457631B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- pbtio
- main component
- porcelain
- points
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000203 mixture Substances 0.000 claims description 37
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 239000011572 manganese Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- DGAHKUBUPHJKDE-UHFFFAOYSA-N indium lead Chemical compound [In].[Pb] DGAHKUBUPHJKDE-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は、磁器組成物、特に1100℃以下の低温
で焼結でき、誘電率が高く、室温および高温にお
ける絶縁抵抗が高く、しかも機械的強度の高い磁
器組成物に関するものである。
従来、誘電体磁器組成物として、チタン酸バリ
ウム(BaTiO3)を主成分とする磁器が広く実用
化されていることは周知のとおりである。しかし
ながら、チタン酸バリウム(BaTiO3)を主成分
とするものは、焼結温度が通常1300〜1400℃の高
温である。このためこれを積層形コンデンサに利
用する場合には内部電極としてこの焼結温度に耐
え得る材料、例えば白金、パラジウムなどの高価
な貴金属を使用しなければならず、製造コストが
高くつくという欠点がある。積層形コンデンサを
安く作るためには、銀、ニツケルなどを主成分と
する安価な金属が内部電極に使用できるような、
できるだけ低温、特に1100℃以下で焼結できる磁
器が必要である。
また磁器組成物の電気的特性として、誘電率が
高く、誘電損失が小さく、絶縁抵抗が高いことが
基本的に要求される。さらに絶縁抵抗の値に関し
ては、高信頼性の部品を要求する米国防総省の規
格であるミリタリースペシフイケシヨン
(Military Specification)のMIL−C−55681B
においては、室温における値のみならず、125℃
における値も定められている。これをみてもわか
るように、信頼性の高い磁器コンデンサを得るた
めには、室温における値のみならず、予想される
最高使用温度における絶縁抵抗も高い値をとるこ
とが必要である。
また、積層形チツプコンデンサの場合は、チツ
プコンデンサを基板に実装したとき、基板とチツ
プコンデンサを構成している磁器との熱膨張係数
の違いにより、チツプコンデンサに機械的な歪が
加わり、チツプコンデンサにクラツクが発生した
り、破損したりすることがある。また、エポキシ
系樹脂等を外装したデイツプコンデンサの場合
も、外装樹脂の応力で、デイツプコンデンサにク
ラツクが発生する場合がある。いずれの場合も、
コンデンサを形成している磁器の機械的強度が低
いほど、クラツクが入りやすく、容易に破損する
ため、信頼性が低くなる。したがつて、磁器の機
械的強度をできるだけ増大させることは実用上極
めて重要なことである。
ところでPb(Mg1/2W1/2)O3−PbTiO3系磁器組
成物については既にエヌ.エヌ.クライニク,エ
イ.アイ.アグラノフスカヤN.N.Krainik and
A.I.Agrarovskaya(Fiziko Tverdogo Tela,
Vo.2,No.1.pp70〜72,Janvara 1960)より提案
があり、また(SrxPb1-xTiO3)a(PbMg0.5W0.5
O3)b〔ただし、x=0〜0.10、a=0.35〜0.5、b
=0.5〜0.65、a+b=1〕について、モノリシ
ツクコンデンサおよびその勢造方法として特開昭
52−21662号公報に開示され、また誘電体粉末組
成物として特開昭52−21699号公報に開示されて
いる。しかしながら、いずれも比抵抗に関する開
示は全くされておらず、これらの磁器組成物の実
用性は不明である。一方、本発明者等は既に910
〜950℃の温度で焼結でき、Pb(Mg1/2W1/2)O3と
PbTiO3との2成分系からなり、これを、〔Pb
(Mg1/2W1/2)O3〕x〔PbTiO3〕1-xと表わしたとき
に、xが0.65<x≦1.00の範囲にある組成物を提
案した。この組成物は、誘電率と比抵抗の積が高
く、誘電損失の小さい優れた電気的特性を有して
いる。しかしながら、上記組成物はいずれも機械
的強度が低いため、その用途は自ら狭い範囲に限
定せざるを得なかつた。
また、Pb(Mg1/2W1/2)O3−PbTiO3系を含む3
成分系については、特開昭55−111011号において
Pb(Mg1/2W1/2)O3−PbTiO3−Pb(Mg1/3Nb2/3)
O3系が、特開昭55−117809号においてPb(Mg1/2
W1/2)O3−PbTiO3−Pb(Mg1/3Ta2/3)O3系が、
それぞれ開示されている。しかしながら、いずれ
も比抵抗や機械的強度に関する開示は全くされて
おらず、矢張りこれらの磁器組成物の実用性につ
いては不明である。
また、本発明者等は既にPb(Mg1/2W1/2)O3−
PbTiO3−Pb(In1/2Nb1/2)O33成分組成物を提案
している。この組成物は、900〜1100℃の低温領
域で焼結でき、誘電率が高く、誘電損失が小さ
く、室温および高温における絶縁抵抗の値が高い
優れた特性を有している。しかしながら、この組
成物は、機械的強度が低いため、その用途は自ら
狭い範囲に限定せざるを得なかつた。
本発明は、以上の点にかんがみ、900〜1100℃
の低温領域で焼結でき、誘電率が高く、誘電損失
が小さく、室温および高温における絶縁抵抗の値
が高い優れた電気的特性を有し、更に機械的強度
も大きい信頼性の高い磁器組成物を提供しようと
するものであり、マグネシウム・タングステン酸
鉛〔Pb(Mg1/2W1/2)O3〕、チタン酸鉛〔PbTiO3〕
およびインジウム・ニオブ酸鉛〔Pb(In1/2Nb1/2)
O3〕からなる3成分組成物を〔Pb(Mg1/2W1/2)
O3〕x〔PbTiO3〕y〔Pb(In1/2Nb1/2)O3〕zと表わし
たときに(ただし、x+y+z=1.00)、この3
成分組成図において、以下の組成点、
(x=0.796,y=0.199,z=0.005)
(x=0.48,y=0.12,z=0.40)
(x=0.21,y=0.09,z=0.70)
(x=0.12,y=0.18,z=0.70)
(x=0.398,y=0.597,z=0.005)
を結ぶ線上、およびこの5点に囲まれる組成範囲
にある主成分組成物に、副成分として、マンガン
〔Mn〕を主成分に対して、0.01〜1原子%添加含
有せしめてなることを特徴とするものである。
以下、本発明を実施例により詳細に説明する。
出発原料として純度99.9%以上の酸化鉛
(PbO)、酸化マグネシウム(MgO)、酸化タング
ステン(WO3)、酸化チタン(TiO2)、酸化イン
ジウム(In2O3)、酸化ニオブ(Nb2O5)、および
炭酸マンガン(MnCO3)を使用し、表に示した
配合比となるように各々秤量する。次に秤量した
各材料をボールミル中で湿式混合した後750〜800
℃で予焼を行ない、この粉末をボールミルで粉砕
し、口別、乾燥後、有機バインダーを入れ、整粒
後プレスし、試料として直径16mm厚さ約2mmの円
板4枚と、直径16mm、厚さ約10mmの円柱を作成し
た。次に試料を空気中900〜1100℃の温度で1時
間焼結し、焼結した円板4枚の上下面に600℃で
銀電極を焼付け、デジタルLCRメーターで周波
数1KHz、電圧1Vr.m.s.温度20℃で容量と誘電損
失を測定し、誘電率を算出した。
次に超絶縁抵抗計で50Vの電圧を1分間印加し
て、絶縁抵抗を温度20℃と125℃で測定し、比抵
抗を算出した。
機械的性質を抗折強度で評価するため、焼結し
た円柱から厚さ0.5mm、幅2mm、長さ約13mmの矩
形板を10枚切り出した。支点間距離を9mmにと
り、二点法で破壊荷重Pm〔Kg〕を測定し、τ=
3Pml/2Wt2〔Kg/cm2〕なる式に従い、抗折強度τ
〔Kg/cm2〕を求めた。ただし、lは支点間距離、
tは試料の厚み、Wは試料の幅である。電気的特
性は円板試料4点の平均値、抗折強度は矩形板試
料10点の平均値より求めた。このようにして得ら
れた磁器の主成分〔Pb(Mg1/2W1/2)O3〕x
〔PbTiO3〕y〔Pb(In1/2Nb1/2)O3〕zの配合比x,
y,zおよび副成分添加量と誘電率、誘電損失、
20℃および125℃における比抵抗、および抗折強
度の関係を次表に示す。
The present invention relates to a porcelain composition, particularly a porcelain composition that can be sintered at a low temperature of 1100° C. or lower, has a high dielectric constant, has a high insulation resistance at room temperature and high temperature, and has high mechanical strength. It is well known that ceramics containing barium titanate (BaTiO 3 ) as a main component have been widely put into practical use as dielectric ceramic compositions. However, those whose main component is barium titanate (BaTiO 3 ) have a sintering temperature of usually 1300 to 1400°C. Therefore, when using this material in a multilayer capacitor, a material that can withstand this sintering temperature must be used for the internal electrodes, such as an expensive noble metal such as platinum or palladium, which has the disadvantage of high manufacturing costs. be. In order to make multilayer capacitors cheaply, it is necessary to use inexpensive metals mainly composed of silver, nickel, etc., which can be used for the internal electrodes.
Porcelain that can be sintered at as low a temperature as possible, especially below 1100°C, is needed. Furthermore, the electrical properties of the ceramic composition are basically required to have a high dielectric constant, low dielectric loss, and high insulation resistance. Furthermore, regarding the insulation resistance value, MIL-C-55681B of Military Specification, which is a US Department of Defense standard that requires highly reliable components.
In addition to the value at room temperature, the value at 125℃
The value of is also determined. As can be seen from this, in order to obtain a highly reliable ceramic capacitor, it is necessary to have a high insulation resistance value not only at room temperature but also at the expected highest operating temperature. In addition, in the case of multilayer chip capacitors, when the chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the porcelain that makes up the chip capacitor. This may cause cracks or damage. Furthermore, even in the case of dip capacitors coated with epoxy resin or the like, cracks may occur in the dip capacitor due to the stress of the coating resin. In either case,
The lower the mechanical strength of the porcelain forming the capacitor, the easier it is to crack and break, resulting in lower reliability. Therefore, it is of practical importance to increase the mechanical strength of porcelain as much as possible. By the way, Pb(Mg 1/2 W 1/2 )O 3 -PbTiO 3 based ceramic composition has already been reported in N. N. Krajnik, A. Ai. Agranovskaya NNKrainik and
AIAgrarovskaya (Fiziko Tverdogo Tela,
Vo.2, No.1.pp70-72, Janvara 1960), and (SrxPb 1-x TiO3 ) a (PbMg 0.5 W 0.5
O 3 ) b [However, x=0~0.10, a=0.35~0.5, b
=0.5 to 0.65, a+b=1], a monolithic capacitor and its manufacturing method were published in Japanese Patent Application Laid-Open No.
It is disclosed in Japanese Patent Application Laid-Open No. 52-21662, and as a dielectric powder composition in Japanese Patent Application Laid-open No. 52-21699. However, none of them discloses any specific resistance, and the practicality of these ceramic compositions is unknown. On the other hand, the inventors have already
Can be sintered at temperatures of ~950℃, Pb(Mg 1/2 W 1/2 ) O 3 and
It consists of a two-component system with PbTiO 3 , which is combined with [Pb
We proposed a composition in which x is in the range of 0.65<x≦1.00 when expressed as (Mg 1/2 W 1/2 )O 3 ] x [PbTiO 3 ] 1-x . This composition has a high product of dielectric constant and specific resistance, and has excellent electrical properties with low dielectric loss. However, since all of the above compositions have low mechanical strength, their applications have had to be limited to a narrow range. In addition, 3 containing Pb(Mg 1/2 W 1/2 ) O 3 −PbTiO 3 system
Regarding the component system, see JP-A-55-111011.
Pb(Mg 1/2 W 1/2 )O 3 −PbTiO 3 −Pb(Mg 1/3 Nb 2/3 )
The O 3 system was introduced in Japanese Patent Application Laid-Open No. 117809/1983 as Pb (Mg 1/2
W 1/2 )O 3 −PbTiO 3 −Pb(Mg 1/3 Ta 2/3 )O 3 system is
Each is disclosed. However, none of them discloses specific resistance or mechanical strength, and the practicality of these ceramic compositions is unclear. In addition, the present inventors have already discovered Pb(Mg 1/2 W 1/2 )O 3 −
A ternary composition of PbTiO3 -Pb(In1 / 2Nb1 /2 ) O3 is proposed. This composition can be sintered in the low temperature range of 900 to 1100°C, has excellent properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature. However, since this composition has low mechanical strength, its use has had to be limited to a narrow range. In view of the above points, the present invention provides temperature control of 900 to 1100℃.
A highly reliable porcelain composition that can be sintered in the low-temperature region of Magnesium lead tungstate [Pb (Mg 1/2 W 1/2 ) O 3 ], lead titanate [PbTiO 3 ]
and indium lead niobate [Pb (In 1/2 Nb 1/2 )
A three -component composition consisting of [Pb (Mg 1/2 W 1/2 )
When expressed as O 3 ] x [PbTiO 3 ] y [Pb (In 1/2 Nb 1/2 ) O 3 ] z (however, x+y+z=1.00), this 3
In the composition diagram, the following composition points: (x=0.796, y=0.199, z=0.005) (x=0.48, y=0.12, z=0.40) (x=0.21, y=0.09, z=0.70) ( x = 0.12, y = 0.18, z = 0.70) (x = 0.398, y = 0.597, z = 0.005) In the main component composition in the composition range surrounded by these five points, as a subcomponent, It is characterized by containing manganese [Mn] in an amount of 0.01 to 1 atomic % based on the main component. Hereinafter, the present invention will be explained in detail with reference to Examples. Lead oxide (PbO), magnesium oxide (MgO), tungsten oxide (WO 3 ), titanium oxide (TiO 2 ), indium oxide (In 2 O 3 ), and niobium oxide (Nb 2 O 5 ) with a purity of 99.9% or higher are used as starting materials. ) and manganese carbonate (MnCO 3 ), and weigh each to achieve the mixing ratio shown in the table. Next, after wet-mixing each weighed material in a ball mill, 750 to 800
The powder was pre-baked at ℃, then ground in a ball mill, separated, dried, added an organic binder, sized and pressed, and used as samples: four disks with a diameter of 16 mm and a thickness of about 2 mm; A cylinder with a thickness of approximately 10 mm was created. Next, the sample was sintered in air at a temperature of 900 to 1100℃ for 1 hour, and silver electrodes were baked at 600℃ on the top and bottom surfaces of the four sintered disks, and a digital LCR meter was used at a frequency of 1KHz and a voltage of 1Vr.ms. The capacitance and dielectric loss were measured at 20°C, and the dielectric constant was calculated. Next, a voltage of 50V was applied for 1 minute using a super insulation resistance meter, insulation resistance was measured at temperatures of 20°C and 125°C, and specific resistance was calculated. In order to evaluate the mechanical properties in terms of bending strength, 10 rectangular plates with a thickness of 0.5 mm, a width of 2 mm, and a length of about 13 mm were cut out from the sintered cylinder. The distance between the fulcrums was set to 9 mm, and the breaking load Pm [Kg] was measured using the two-point method, and τ =
The bending strength τ [Kg/cm 2 ] was determined according to the formula: 3Pml/2Wt 2 [Kg/cm 2 ]. However, l is the distance between the fulcrums,
t is the thickness of the sample, and W is the width of the sample. The electrical properties were determined from the average value of 4 disk samples, and the bending strength was determined from the average value of 10 rectangular plate samples. The main component of the porcelain obtained in this way [Pb (Mg 1/2 W 1/2 ) O 3 ] x
[PbTiO 3 ] y [Pb (In 1/2 Nb 1/2 ) O 3 ] z blending ratio x,
y, z and amount of subcomponents added, dielectric constant, dielectric loss,
The relationship between specific resistance and bending strength at 20°C and 125°C is shown in the table below.
【表】【table】
【表】
表に示した結果から明らかなように、Pb
(Mg1/2W1/2)O3−PbTiO3−Pb(In1/2Nb1/2)O3
3成分組成物に副成分としてMnを特定の割合い
で添加含有せしめたものは、誘電率が1010〜3540
と高く、誘電損失が0.2〜2.9%と小さく、比抵抗
が20℃において1.5×1012〜7.2×1013Ω・cmと高
く、しかも125℃においても7.0×1010〜1.1×1013
Ω・cmという高い値を示し、さらに抗折強度も
970〜1460Kg/cm2と実用上十分高い値を示す信頼
性の高い実用性の極めて高い磁器組成物であるこ
とがわかる。。このように優れた特性を示す本発
明の磁器組成物は焼結温度が1100℃以下の低温で
あるため、積層コンデンサの内部電極の低価格化
を実現できると共に、省エネルギーや炉材の節約
にもなるという極めて優れた効果も生じる。図に
本発明の主成分組成範囲を示す。図に示す番号は
表に示した主成分配合比の番号に対応させてあ
る。
本発明は、主成分組成物を〔Pb(Mg1/2W1/2)
O3〕x〔PbTiO3〕y〔Pb(In1/2Nb1/2)O3〕zと表わし
たときに(ただし、x+y+z=1.00)、その組
成範囲は
(x=0.796,y=0.199,z=0.005)
(x=0.48,y=0.12,z=0.40)
(x=0.21,y=0.09,z=0.70)
(x=0.12,y=0.18,z=0.70)
(x=0.398,y=0.597,z=0.005)
を結ぶ線上、およびこの5点に囲まれる組成範囲
に限定され、副成分の添加含有量は主成分に対し
て0.01〜1原子%に限定される。なお、主成分組
成範囲において、組成点2,15を結ぶ線の外側で
は高温における比抵抗が小さくなり実用的でな
い。組成点15,16,7,3,2を結ぶ線の外側で
は誘電率が小さくなり実用的でない。また副成分
であるMnの添加量が0.01原子%未満では抗折強
度の改善効果が小さく、1原子%を超えると逆に
抗折強度が小さくなるため実用的でない。[Table] As is clear from the results shown in the table, Pb
(Mg 1/2 W 1/2 )O 3 −PbTiO 3 −Pb(In 1/2 Nb 1/2 )O 3
A three-component composition containing Mn as a subcomponent in a specific proportion has a dielectric constant of 1010 to 3540.
It has a high dielectric loss of 0.2 to 2.9%, and a high specific resistance of 1.5×10 12 to 7.2×10 13 Ω・cm at 20°C, and 7.0×10 10 to 1.1×10 13 even at 125°C.
It shows a high value of Ω・cm, and also has a high bending strength.
It can be seen that this is a highly reliable and extremely practical porcelain composition that exhibits a value of 970 to 1460 Kg/cm 2 , which is sufficiently high for practical use. . The porcelain composition of the present invention, which exhibits such excellent properties, has a low sintering temperature of 1,100°C or less, which makes it possible to reduce the cost of the internal electrodes of multilayer capacitors, and also to save energy and furnace materials. An extremely excellent effect also occurs. The figure shows the main component composition range of the present invention. The numbers shown in the figure correspond to the numbers of the main component blending ratios shown in the table. The present invention uses the main component composition as [Pb (Mg 1/2 W 1/2 )
When expressed as O 3 ] x [PbTiO 3 ] y [Pb (In 1/2 Nb 1/2 ) O 3 ] z (where x+y+z=1.00), the composition range is (x=0.796, y=0.199) , z=0.005) (x=0.48, y=0.12, z=0.40) (x=0.21, y=0.09, z=0.70) (x=0.12, y=0.18, z=0.70) (x=0.398, y = 0.597, z = 0.005) and the composition range surrounded by these five points, and the added content of the subcomponent is limited to 0.01 to 1 atomic % with respect to the main component. In addition, in the main component composition range, outside the line connecting composition points 2 and 15, the specific resistance at high temperature becomes small and is not practical. Outside the line connecting composition points 15, 16, 7, 3, and 2, the dielectric constant becomes small and is not practical. Furthermore, if the amount of the subcomponent Mn added is less than 0.01 atomic %, the effect of improving the flexural strength is small, and if it exceeds 1 atomic %, the flexural strength decreases, which is not practical.
図は本発明の主成分組成範囲と実施例に示した
組成点を示す図である。
The figure is a diagram showing the main component composition range of the present invention and the composition points shown in Examples.
Claims (1)
(Mg1/2W1/2)O3〕、チタン酸鉛〔PbTiO3〕およ
びインジウム・ニオブ酸鉛〔Pb(In1/2Nb1/2)O3〕
からなる3成分組成物を〔Pb(Mg1/2W1/2)O3〕x
〔PbTiO3〕y〔Pb(In1/2Nb1/2)O3〕zと表わしたとき
に(ただし、x+y+z=1.00)、この3成分組
成図において、以下の組成点 (x=0.796,y=0.199,z=0.005) (x=0.48,y=0.12,z=0.40) (x=0.21,y=0.09,z=0.70) (x=0.12,y=0.18,z=0.70) (x=0.398,y=0.597,z=0.005) を結ぶ線上、およびこの5点に囲まれる組成範囲
にある主成分組成物に、副成分としてマンガン
(Mn)を主成分に対して0.01〜1原子%添加含有
せしめてなることを特徴とする磁器組成物。[Claims] 1. Magnesium lead tungstate [Pb
(Mg 1/2 W 1/2 ) O 3 ], lead titanate [PbTiO 3 ] and lead indium niobate [Pb (In 1/2 Nb 1/2 ) O 3 ]
A three-component composition consisting of [Pb(Mg 1/2 W 1/2 ) O 3 ] x
When expressed as [PbTiO 3 ] y [Pb (In 1/2 Nb 1/2 ) O 3 ] z (where x+y+z=1.00), in this three-component composition diagram, the following composition points (x=0.796, y=0.199, z=0.005) (x=0.48, y=0.12, z=0.40) (x=0.21, y=0.09, z=0.70) (x=0.12, y=0.18, z=0.70) (x= 0.398, y = 0.597, z = 0.005) and in the composition range surrounded by these five points, manganese (Mn) is added as a subcomponent in an amount of 0.01 to 1 atomic % based on the main component. A porcelain composition comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144780A JPS6036366A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144780A JPS6036366A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6036366A JPS6036366A (en) | 1985-02-25 |
| JPH0457631B2 true JPH0457631B2 (en) | 1992-09-14 |
Family
ID=15370260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58144780A Granted JPS6036366A (en) | 1983-08-08 | 1983-08-08 | Ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036366A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4753905A (en) * | 1985-07-31 | 1988-06-28 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition |
-
1983
- 1983-08-08 JP JP58144780A patent/JPS6036366A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6036366A (en) | 1985-02-25 |
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