JPH0457740B2 - - Google Patents
Info
- Publication number
- JPH0457740B2 JPH0457740B2 JP60218439A JP21843985A JPH0457740B2 JP H0457740 B2 JPH0457740 B2 JP H0457740B2 JP 60218439 A JP60218439 A JP 60218439A JP 21843985 A JP21843985 A JP 21843985A JP H0457740 B2 JPH0457740 B2 JP H0457740B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- chromium
- resistance
- electrically resistive
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Conductive Materials (AREA)
- Electronic Switches (AREA)
- Physical Vapour Deposition (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、典型的には例えば薄膜抵抗素子、
薄膜発熱素子等の薄膜素子に用いられる電気抵抗
材料およびそれを用いた薄膜素子に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention typically applies to thin film resistive elements,
The present invention relates to electrical resistance materials used in thin film elements such as thin film heating elements, and thin film elements using the same.
薄膜抵抗器の抵抗薄膜として代表的なニツケル
−クロム膜の比抵抗は、セラミツク基板上で約
200μΩ・cm程度が限度である。従つて、この材料
を用いて高抵抗値の素子を形成するには、微細パ
ターン化により抵抗パスを大きくする必要がある
けれども、素子の大きさには規格等によつて制限
があり、現実的にはセラミツク基板上にて面積抵
抗値は100Ω／□程度が限度となつている。
The specific resistance of a nickel-chromium film, which is a typical resistive thin film for thin-film resistors, is approximately
The limit is about 200μΩ・cm. Therefore, in order to form a high-resistance element using this material, it is necessary to enlarge the resistance path through fine patterning, but there are restrictions on the size of the element due to standards, etc., and it is not practical. The sheet resistance value on a ceramic substrate is limited to about 100Ω/□.
しかしながら、今後の素子の小型化、高集積化
等を考慮すると、より高抵抗でかつ耐熱性の大き
い材料が必要である。
However, considering future miniaturization and higher integration of elements, materials with higher resistance and greater heat resistance are required.
そこでこの発明は、比抵抗が大きくかつ耐熱性
も大きい電気抵抗材料およびそれを用いた薄膜素
子を提供することを主たる目的とする。 Therefore, the main object of the present invention is to provide an electrical resistance material that has high specific resistance and high heat resistance, and a thin film element using the same.
この発明の電気抵抗材料は、アルミニウム含有
量が８〜47重量％の組成域のクロム−アルミニウ
ム合金から成ることを特徴とする。
The electrical resistance material of the present invention is characterized in that it consists of a chromium-aluminum alloy having an aluminum content in the range of 8 to 47% by weight.
またこの発明の薄膜素子は、アルミニウム含有
量が８〜47重量％の組成域のクロム−アルミニウ
ム合金から成る電気抵抗材料の薄膜を基板上に形
成して成ることを特徴とする。 Further, the thin film element of the present invention is characterized in that a thin film of an electrically resistive material made of a chromium-aluminum alloy having a composition range of 8 to 47% by weight of aluminum is formed on a substrate.
上記電気抵抗材料を構成するクロム−アルミニ
ウム合金中のアルミニウム含有量を８〜47重量％
に限定したのは、この発明では、比抵抗が従来の
ニツケル−クロム合金の比抵抗よりも明らかに大
きく（具体的には2.5倍以上、数値で言うと
500μΩ・cm以上）、かつ従来のニツケル−クロム
合金と同等以上の耐熱性を有する材料を開発する
ことに目標をおいたことによる。
The aluminum content in the chromium-aluminum alloy that constitutes the above electrical resistance material is 8 to 47% by weight.
The reason for this limitation is that in this invention, the resistivity is clearly larger than that of conventional nickel-chromium alloys (specifically, more than 2.5 times, in numerical terms).
The goal was to develop a material with heat resistance equal to or higher than that of conventional nickel-chromium alloys.
即ち、上記電気抵抗材料を構成するクロム−ア
ルミニウム合金中のアルミニウム含有量が８重量
％未満では、目標とする500μΩ・cm以上の比抵抗
が得られず、また同アルミニウム含有量が47重量
％を越えると、特に50重量％を越えると、目標と
する500μΩ・cm以上の比抵抗が得られないだけで
なく、耐熱性も劣化するからである。 That is, if the aluminum content in the chromium-aluminum alloy constituting the electrical resistance material is less than 8% by weight, the target specific resistance of 500 μΩ・cm or more cannot be obtained, and if the aluminum content is 47% by weight or more, This is because if it exceeds, especially if it exceeds 50% by weight, not only will it not be possible to obtain the target specific resistance of 500 μΩ·cm or more, but the heat resistance will also deteriorate.
従つて、アルミニウム含有量が８〜47重量％の
組成域のクロム−アルミニウム合金から成るこの
発明の電気抵抗材料によれば、従来のニツケル−
クロム合金の2.5倍以上の比抵抗が得られ、また
耐熱性も従来のニツケル−クロム合金と同等以上
となる。 Therefore, according to the electrical resistance material of the present invention comprising a chromium-aluminum alloy with an aluminum content in the composition range of 8 to 47% by weight, it is possible to
It has a resistivity that is 2.5 times higher than that of chromium alloys, and its heat resistance is equal to or higher than that of conventional nickel-chromium alloys.
また、このような電気抵抗材料の薄膜を基板上
に形成して成る薄膜素子においては、耐熱性が大
きく、しかも小型化、高集積化に対応することが
可能となる。 Further, a thin film element formed by forming a thin film of such an electrically resistive material on a substrate has high heat resistance and can be adapted to miniaturization and high integration.
図面は、この発明に係る電気抵抗材料薄膜を構
成するクロム−アルミニウム合金中のアルミニウ
ム含有量に対する比抵抗の変化を示す特性図であ
り、比較のために従来のニツケル−クロム薄膜の
クロム含有量に対する比抵抗の変化を１点鎖線で
示す。この実施例は、真空蒸着により96％アルミ
ナ基板上に、クロム−アルミニウム合金から成る
電気抵抗材料を薄膜として形成したものであり、
その特徴は次のとおりである。
The drawing is a characteristic diagram showing the change in specific resistance with respect to the aluminum content in the chromium-aluminum alloy constituting the electrically resistive material thin film according to the present invention. The change in specific resistance is shown by a dashed-dotted line. In this example, an electrically resistive material made of a chromium-aluminum alloy is formed as a thin film on a 96% alumina substrate by vacuum evaporation.
Its characteristics are as follows.
図中に実線で示すように、クロム−アルミニ
ウム合金中のアルミニウム含有量が８〜47重量
％の組成域においては、熱処理前および後の両
方で、非常に大きな比抵抗、具体的には図中に
１点鎖線で示す従来のニツケル−クロム薄膜の
2.5倍以上の（即ち500μΩ・cm以上の）比抵抗
を示しており、特にアルミニウムの含有量が20
重量％付近では、比抵抗は従来のものの約10倍
にも達している。従つてこの電気抵抗材料薄膜
によれば、1KΩ／□程度の面積抵抗値を得る
ことも可能である。 As shown by the solid line in the figure, in the composition range where the aluminum content in the chromium-aluminum alloy is 8 to 47% by weight, the specific resistance is extremely large both before and after heat treatment. The conventional nickel-chromium thin film shown by the dashed line in
It shows a specific resistance of more than 2.5 times (that is, more than 500μΩ・cm), especially when the aluminum content is 20
At around 10% by weight, the specific resistance is about 10 times that of conventional products. Therefore, with this electrically resistive material thin film, it is possible to obtain a sheet resistance value of about 1KΩ/□.
図中に破線で示すように、上記のような組成
域では、熱処理（500℃，８時間）後の比抵抗
の変化は少なく、即ち大きな耐熱性を示してお
り、これは従来のニツケル−クロム薄膜と同
等、あるいはそれ以上である。 As shown by the broken line in the figure, in the above composition range, the change in resistivity after heat treatment (500°C, 8 hours) is small, indicating great heat resistance, which is higher than that of conventional nickel-chromium. It is equivalent to or better than thin film.
図示しないけれども、膜厚に対する比抵抗の
変化は極めて小さく、例えば、250Å〜2000Å
の膜厚領域での比抵抗はほぼ一定である。 Although not shown in the figure, the change in resistivity with respect to film thickness is extremely small, for example, between 250 Å and 2000 Å.
The specific resistance in the film thickness region is almost constant.
蒸着材料であるクロム及びアルミニウムは、
薄膜用材料としてごく一般的に用いられてお
り、安価に入手することができる。 Chromium and aluminum, which are vapor deposition materials, are
It is commonly used as a thin film material and can be obtained at low cost.
尚、上記特徴、取り分け上記，の特徴は、
この発明に係る電気抵抗材料そのものが示す特徴
であり、従つて当該電気抵抗材料は、必ずしも薄
膜にすることを要しない。また薄膜にする場合で
も、薄膜形成手段は上記真空蒸着以外にスパツタ
リング等でもよく、基板も上記アルミナ以外の他
のセラミツク基板、ガラス基板あるいは半導体基
板等でも良い。 In addition, the above features, especially the above features, are:
This is a characteristic exhibited by the electrically resistive material itself according to the present invention, and therefore, the electrically resistive material does not necessarily need to be made into a thin film. Further, even when forming a thin film, the thin film forming means may be sputtering or the like other than the above-mentioned vacuum evaporation, and the substrate may be a ceramic substrate other than the above-mentioned alumina, a glass substrate, a semiconductor substrate, or the like.
上記のような電気抵抗材料の用途は種々考えら
れる。例えば、当該電気抵抗材料を薄膜として上
述のような基板上に形成することによつて、薄膜
抵抗素子、薄膜発熱素子等の薄膜素子として用い
ることができる。 There are various possible uses for the electrically resistive material as described above. For example, by forming the electric resistance material as a thin film on the substrate as described above, it can be used as a thin film element such as a thin film resistance element or a thin film heating element.
より具体的に示せば、当該電気抵抗材料の薄膜
を例えば抵抗膜として用いることができ、そのよ
うにすれば耐熱性の大きな高抵抗素子を安価に作
ることができ、今後の素子の小型化、高集積化へ
の対応が可能となる。また、当該電気抵抗材料の
薄膜を、例えばサーマルプリンタヘツドの発熱体
として用いることもでき、そのようにすれば抵抗
値が高い分だけ発熱素子を小型化することが可能
となり、これによつて例えば高ドツト密度化への
対応も容易となる。 To be more specific, the thin film of the electrically resistive material can be used as a resistive film, for example, and in this way, a high resistance element with great heat resistance can be manufactured at low cost, which will lead to the miniaturization of elements in the future. It becomes possible to respond to high integration. Furthermore, the thin film of the electrically resistive material can be used, for example, as a heating element in a thermal printer head, and in this way, the heating element can be made smaller in proportion to the higher resistance value. It also becomes easier to cope with higher dot density.
以上のようにこの発明に係る電気抵抗材料によ
れば、従来のニツケル−クロム合金の2.5倍以上
という非常に大きな比抵抗が得られ、かつ耐熱性
も従来のニツケル−クロム合金と同等以上とな
る。
As described above, according to the electrical resistance material of the present invention, a very high resistivity of more than 2.5 times that of conventional nickel-chromium alloys can be obtained, and the heat resistance is also equal to or higher than that of conventional nickel-chromium alloys. .
またこの発明に係る薄膜素子によれば、それを
構成する電気抵抗材料の比抵抗および耐熱性が大
きいので、耐熱性が大きく、かつ小型化、高集積
化等に対応することが可能であり、しかも安価に
作ることができる。 Further, according to the thin film element according to the present invention, since the electrical resistance material constituting the thin film element has high specific resistance and heat resistance, it has high heat resistance and can be adapted to miniaturization, high integration, etc. Moreover, it can be made inexpensively.
図面は、この発明に係る電気抵抗材料薄膜を構
成するクロム−アルミニウム合金中のアルミニウ
ム含有量に対する比抵抗の変化および従来のニツ
ケル−クロム薄膜のクロム含有量に対する比抵抗
の変化を示す特性図である。
The drawing is a characteristic diagram showing the change in resistivity with respect to the aluminum content in the chromium-aluminum alloy constituting the electrically resistive material thin film according to the present invention, and the change in resistivity with respect to the chromium content of a conventional nickel-chromium thin film. .
１ R2T14B系磁石（ここでＲはイツトリウム及
び希土類元素、Ｔは遷移金属をあらわす。）を粉
末冶金法によつて製造する方法において、Ｒ中の
Ce含有量を0.5〜40wt％としたＲ・Fe・Ｂ系焼結
体を焼結温度から700℃の温度範囲内で時効を開
始し、400℃以上の温度まで多段時効を行なうこ
とを特徴とする希土類磁石の製造方法。
1 R 2 T 14 In a method for producing B-based magnets (where R represents yttrium and rare earth elements, and T represents a transition metal) by powder metallurgy,
The feature is that the R/Fe/B based sintered body with a Ce content of 0.5 to 40 wt% is aged within a temperature range of 700°C from the sintering temperature, and multistage aging is performed to a temperature of 400°C or higher. A method for manufacturing rare earth magnets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60218439A JPS6277436A (en) | 1985-09-30 | 1985-09-30 | Chromium-aluminum alloy and thin film element using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60218439A JPS6277436A (en) | 1985-09-30 | 1985-09-30 | Chromium-aluminum alloy and thin film element using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6277436A JPS6277436A (en) | 1987-04-09 |
| JPH0457740B2 true JPH0457740B2 (en) | 1992-09-14 |
Family
ID=16719929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60218439A Granted JPS6277436A (en) | 1985-09-30 | 1985-09-30 | Chromium-aluminum alloy and thin film element using same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6277436A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6708538B2 (en) * | 2016-12-02 | 2020-06-10 | 公益財団法人電磁材料研究所 | Thin film alloy for strain sensors with excellent thermal stability |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5822379A (en) * | 1981-07-30 | 1983-02-09 | Tama Denki Kogyo Kk | Target for sputtering |
| JPS6024343A (en) * | 1983-07-20 | 1985-02-07 | Taisei Koki Kk | Metallic thin film resistor |
-
1985
- 1985-09-30 JP JP60218439A patent/JPS6277436A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6277436A (en) | 1987-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |