JPH0459718B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a gallium arsenide semiconductor memory device.

[Conventional technology]

Figure 2 shows, for example, a conventional E/D type direct couple FET logic (Direct Couple FET Logic) circuit (hereinafter referred to as "Direct Couple FET Logic") described in Proceedings of the National Conference of the Institute of Electronics and Communication Engineers in 1985, P2-304.
It is abbreviated as DCFL circuit. ) shows the configuration of memory cells, word lines, and bit lines of a gallium arsenide semiconductor memory device. In the figure, 1 is a memory cell, which is a normally-on metal-semiconductor field effect transistor (hereinafter abbreviated as MESFET) 2
and 3 as a load, and a flip-flop circuit with normally-off type MESFETs 4 and 5 as drivers,
It is composed of transfer gates 6 and 7 using normally-off MESFETs. Node N1
is the power supply node of the memory cell, and nodes N2 and N
3 is a storage node where data is stored. Node N4 is connected to the gates of transfer gates 6 and 7 by a word line. Node N5
and N6 constitute a pair of bit lines, which are connected to transfer gates 6 and 7, respectively. 8
and 9 are resistive load elements for pulling up the bit line, which are connected between the pull-up power supply node N7 and the bit line node N5, and between the power supply node N7 and the bit line node N6, respectively. Further, normally-off type MESFETs 10 and 11 are transfer gates for column selection, and are connected between nodes N5 and N8, and between nodes N6 and N9, respectively. Node N10 is connected to the gates of transfer gates 10 and 11 by a bit line select signal line. Further, node N8 and node N9 constitute a pair of I/O lines.

Next, the operation will be explained based on FIG.

Normally, an E/D type DCFL circuit using gallium arsenide has a high level of about 0.6V (this is determined by the height of the shot barrier between the gate and source of the MESFET).
It operates with an internal signal of low level around 0V. Therefore, the memory cell 1 is selected when the word line N4, which has a high level of 0.6V and a low level of 0V, and the bit line select signal line N10 both become high level. Further, the power supply voltages of nodes N1 and N7 are both 1.0V.

First, the read operation will be explained. When word line N4 and bit line select signal line N10 are both at low level, transfer gates 6, 7 and 10, 11 are all non-conductive, and storage nodes N2, N3 are cut off from bit lines N5, N6, respectively. Since the memory cell 1 is composed of a flip-flop circuit, a pair of data is stored in the storage nodes N2 and N3 at this time. In other words, node N2 is at high level (0.6V)
When , node N3 becomes low level (0V),
Conversely, when node N2 is at low level, node N3
becomes high level. Assume now that a high level is stored in the node N2 and a low level is stored in the node N3. At this time, driver FET4 is in a non-conducting state,
5 is a conductive state.

Next, when word line N4 becomes high level (0.6V), transfer gates 6 and 7 become conductive, and the potentials of nodes N2 and N3 change to node N5.
and is read out to node N6. At this time, since the driver FET 4 is in a non-conducting state, the potential of the high side bit line N5 is set to the bit line load 8, the transfer gate 6, the gate of the driver FET 5, and the potential of the high side bit line N5.
It is determined by the potential division between the sources and the Schottky diode, and is a value slightly higher than the normal Schottky barrier height of 0.6V. Now let this value be 0.7V. On the other hand, the potential of the low-side bit line N6 is
Since FET5 is conductive, the bit line load 9, transfer gate 7 and driver
Determined by potential division with FET5, usually ground level
The value will be between 0V and shot barrier height 0.6V.
Now let this value be 0.2V. That is, word line N
4 rises, high level 0.7V and low level from memory cell 1 to bit lines N5 and N6.
0.2V data is read.

Next, when the bit line select signal line N10 goes high (0.6V), transfer gates 10 and 11 become conductive, and the data on the bit lines N5 and N6 are read out to the I/O lines N8 and N9, respectively. At this time, the potential of the high side I/O line N8 varies from the bit line select signal line level (0.6V) to the threshold voltage of the transfer gate 10, V _th 10
The value obtained by subtracting 0.6−V _th can only rise to 10V. This is because when the potential of the I/O line N8 becomes 0.6-V _th 10V or more, the transfer gate 10 becomes non-conductive. Now if V _th 10 is 0.1V, I/
The potential of the O line N8 is 0.6V-0.1V=0.5V. On the other hand, the potential of the low-side I/O line N9 is 0.2V because the potential of the bit line N6 is directly transmitted.

From the above, during reading, memory cell 1 is selected by both the word line N4 and the bit line select signal line N10 becoming high level, and the bit lines N5 and N6 have a high level of 0.7V and a low level.
0.2V data is read out, and further I/O lines N8,
It can be seen that data of high level 0.5V and low level 0.2V is read to N9. If either word line N4 or bit line select signal line N10 is at low level, data in memory cell 1 is not read out to the I/O line. Furthermore, the data read to the I/O line is output to the outside of the memory via a sense amplifier and a data output circuit.

Next, the write operation will be explained. As an initial condition, node N2 is set to low level (0V) and node N3 is set to high level (0.6V).
Consider the operation of writing a high level to node N3 and a low level to node N3. During writing as well as during reading, both word line N4 and bit line select signal line N10 are set to high level (0.6V) to select memory cell 1, and I/O line N8 is set to power supply potential (1.0V) and N9 is set to high level (0.6V). Set to ground potential (0V). At this time, the transfer gate 10 on the high side becomes non-conductive when the bit line N5 is 0.5V or higher, so the potential of the bit line N5 becomes 0.5V. At the same time, the potential of the bit line N6 becomes close to the ground potential because the ability to draw current from the transfer gate 11 is much greater than the current supply ability of the bit line load 9. Now if this
Set to 0.1V. That is, when writing reverse data, the bit line potential momentarily becomes 0.5V at node N5 and 0.1V at node N6. Memory cell 1 is normally designed so that the potential of storage node N2 is higher than the potential of N3 in this state, and therefore the data is inverted at this time. After data inversion, driver FET4 becomes non-conductive, so
The potential of the high side bit line N5 rises to 0.7V. Furthermore, when the word line N4 is set to low level after data inversion, the potential of the storage node is changed to N2.
0.6V, N3 settles to 0V. In this way, data writing is completed.

[Problem that the invention seeks to solve]

Since the conventional gallium arsenide semiconductor memory device is constructed as described above, it has had the following problems in data reading.

That is, as explained earlier, for example, the high level read to the bit line N5 is caused by the bit line load 8.
The low level is determined by the potential division between the transfer gate 6 and the gate and source of the driver FET 5 and the Schottky diode.
Since it is determined by the potential division between the bit line and the bit line, if there are variations in the characteristics of the transfer gate or driver FET, the read level of the bit line will vary. Normally, a pair of bit lines is shared by multiple memory cells, and in an E/D type DCFL circuit using gallium arsenide, the amplitude of the internal signal is as small as about 0.6V, and the amplitude of the bit line especially during reading is small. The readout level of the bit line is likely to vary due to small variations in the characteristics of the transfer gates and driver FETs of multiple memory cells that share a pair of bit lines. Katta.

To explain in more detail, Figures 3a to 3c show the time change of the bit line level when there is variation in the low level of the bit line, and the case where mutually opposite data are read in two consecutive read cycles is shown. It shows. In the figure, A is the waveform when the low level of the previous cycle is the same as the low level of the next cycle, B is the waveform when the low level of the previous cycle is higher than the low level of the next cycle, and C is the waveform when the low level of the previous cycle is the same as the low level of the next cycle. It represents the waveform when the voltage is lower than the low level of the cycle. As can be seen from this figure, compared to when the low level of the bit line is the same in the previous and subsequent cycles, when the low level of the previous cycle is higher than the subsequent cycle, the intersection of the bit lines moves faster, and the low level of the previous cycle If is lower than the later cycle, the bit line intersection will move later. This variation in the low level of the bit line read potential causes variation in the positions of the bit line intersections, which causes variation in access time. The same can be said for high-level variations. As mentioned above, in the conventional configuration, the memory cell transfer gate and driver FET
There was a problem in that the bit line level varied due to variations in the characteristics of the bit line, resulting in variations in access time.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor memory device that can reduce variations in access time between memory cells.

[Means for solving problems]

The semiconductor memory device according to the present invention is provided with a clamp circuit that has a shot diode and clamps the power supply voltage according to the height of the shot barrier, and when reading, the clamp voltage is applied to the bit line as a low level read potential. This is what I did.

[Effect]

In this invention, the power supply voltage is clamped by the height of the shot barrier of the shot shot diode, and this clamp voltage is applied to the bit line as a low level read potential. can be kept constant regardless of variations in the characteristics of
This makes it possible to reduce variations in access time between memory cells.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a circuit diagram showing the configuration of memory cells, word lines, and bit lines of a semiconductor memory device according to an embodiment of the present invention, and this circuit is formed on a semi-insulating gallium arsenide substrate. In FIG. 1, the configuration of the memory cell 1, word line, and bit line is exactly the same as in FIG. Normally-off type MESFET with bit line clamp circuit
12 has its drain connected to the power supply node N11 and its source connected to the node N12; the first shottock diode 13 has its anode connected to the node N12 and its cathode connected to the ground potential; and the second shottock diode 14 has its anode connected to the node N12. N12 has its cathode connected to bit line node N5. In addition, 30 is a normally-off type MESFET15, the first
In the second bit line clamp circuit, the normally-off type MESFET 15 has its drain connected to the power supply node N11 and its source connected to the node N13. The second shotgun diode 17 has its anode connected to the node N13 and its cathode connected to the ground potential, and its anode connected to the node N13 and its cathode connected to the bit line node N1.
6. Also, normally-off type
A write/read control signal is input to gates N14 of MESFETs 12 and 15.

Next, the operation of the circuit of this embodiment will be explained based on FIG.

Here, as in the conventional circuit, the memory cell 1 is selected when the word line N4, which has a high level of 0.6V and a low level of 0V, and the bit line select signal line N10 both become high level. Node N1,N
The power supply voltages of 7 and N11 are all 1.0V.

First, the operation of the bit line clamp circuit will be explained. The write/read control signal of node N14 is
When reading, it becomes a high level (1.0V, which is naturally achieved if the previous stage is an E/D inverter with a power supply voltage of 1.0V), and when writing, it becomes a low level (0V). Here, the shot barrier height of the first shot diodes 13 and 16 is set to the normal 0.6V, whereas the shot barrier height of the second shot diodes 14 and 17 is set to 0.6V.
Set to 0.3V. This can be achieved by appropriately selecting the impurity density of the gallium arsenide semiconductor substrate and the metal of the anode.

During reading, that is, when the write/read control signal at node N14 is at high level (1.0V), normally-off MESFETs 12 and 15 are conductive, and nodes N12 and N13 are both set to 0.6V by shot diodes 13 and 16, respectively.
be clamped to. At this time, bit line node N5
and N6 are connected to shot diodes 14 and 1 from the potential 0.6V of nodes N12 and N13, respectively.
It cannot be lower than the value minus 0.3V, which is the shot barrier height of 7, that is, 0.3V. This is because when the voltage drops below 0.3V, shot diodes 14 and 17 become conductive and the bit line potential is raised to 0.3V. On the other hand, during writing, that is, when the write/read control signal at node N14 is at a low level (0V), normally-off type MESFETs 12 and 15 are in a non-conductive state, and nodes N12 and N13 are in a floating state. At this time, nodes N12 and N13
has no effect on bit line nodes N5 and N6. Therefore, during writing, the state is the same as without the bit line clamp circuit.

Next, a read operation of the memory circuit will be explained. Word line N4 and bit line select signal line N
10 are both at low level, transfer gates 6, 7 and 10, 11 are all non-conductive, and storage nodes N2 and N3 are connected to bit line N
5 and N6, respectively. Since memory cells are composed of flip-flop circuits,
At this time, a pair of data is stored in storage nodes N2 and N3 as in the conventional example. Assume that a high level is stored in the node N2 and a low level is stored in the node N3. At this time, driver FET4
5 is a non-conductive state, and 5 is a conductive state.

Next, when word line N4 becomes high level (0.6V), transfer gates 6 and 7 become conductive, and the potentials of nodes N2 and N3 change to node N
5 and node N6. At this time, the potential of the high-side bit line N5 is determined by the potential division between the bit line load 8, the transfer gate 6, and the Schottky diode between the gate and source of the driver FET 5, since the driver FET 4 is in a non-conducting state. , becomes 0.7V. In this case, the first bit line clamp circuit 20 does not affect this high level value. On the other hand, the low side bit line N6
Since the driver FET 5 is in a conductive state, 0.2V, which is a value determined by the potential division between the bit line load 9, the transfer gate 7, and the driver FET 5, is about to be read out. The voltage is pulled up to 0.3V by the clamp circuit 30 and remains constant at 0.3V. That is, word line N
4 rises, high level 0.7V and low level from memory cell 1 to bit lines N5 and N6.
Data of 0.3V is read, and this low level remains constant at 0.3V regardless of variations in the characteristics of the memory cells.

Next, when the bit line select signal line N10 goes high (0.6V), transfer gates 10 and 11 become conductive, and the data on the bit lines N5 and N6 are read out to the I/O lines N8 and N9, respectively. At this time, the potential of the high side I/O line N8 varies from the bit line select signal line level (0.6V) to the threshold voltage of the transfer gate 10, V _th 10
(0.1V) minus 0.6 – 0.1 = 0.5V. This is because the potential of I/O line N8 is
This is because when the voltage exceeds 0.5V, the transfer gate 10 becomes non-conductive. On the other hand, the low side I/O
The potential of the line N9 is 0.3V because the potential of the bit line N6 is directly transmitted.

From the above, during reading, memory cell 1 is selected by both the word line N4 and the bit line select signal line N10 becoming high level, and the bit lines N5 and N6 have a high level of 0.7V and a low level.
0.3V data is read out, and further I/O lines N8,
It can be seen that data of high level 0.5V and low level 0.3V is read to N9. low level
0.3V has no variation depending on memory cells and has extremely good uniformity. Further, as in the conventional circuit, if either the word line N4 or the bit line select signal line N10 is at a low level, the data in the memory cell 1 is not read out to the I/O line. Furthermore, the data read to the I/O line is output to the outside of the memory via a sense up and data output circuit. On the other hand, regarding the write operation to the memory cell, as described above, the first and second bit line clamp circuits 20,
30 does not affect the write operation at all during writing. Therefore, the write operation is exactly the same as in the conventional circuit described above.

In this way, this embodiment has the second shot diodes 14 and 17, and uses their shot barrier height of 0.3V to fix the read low level of the bit lines N5 and N6 to 0.3V. Since the line clamp circuits 20 and 30 are provided, when the word line N4 rises, the low side bit line N
Always keep the low level read to 5 or N6.
0.3V, which can suppress variations in access time.

In the above embodiment, the shot barrier height of the second shot diodes 14 and 17 is
Although the case of 0.3V is shown, the reading low level of the bit line may be arbitrarily adjusted by changing the height of this shot barrier as necessary.

〔Effect of the invention〕

As described above, according to the present invention, the power supply voltage is clamped by the shot barrier height of the shot diode, and this clamp voltage is applied to the bit line as a low level read potential. The level can be kept constant regardless of variations in element characteristics of individual memory cells, thereby making it possible to obtain a semiconductor memory device with small variations in access time between memory cells.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram showing the configuration of memory cells, word lines, and bit lines of a semiconductor memory device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram showing the configuration of memory cells, word lines, and bit lines of a conventional semiconductor memory device. FIG. 3 is a diagram showing the change over time in the bit line read level when the bit line read low level varies. In the figure, 1 is a memory cell, 2 and 3 are normally-on MESFETs, 4 to 7, 10 to 12, and 15 are normally-off MESFETs, 8 and 9 are resistive load elements, and 13, 14, 16, and 17 are shutters. Tsutoki diodes, N1 to N14 are each node, 20 and 30 are the first and second bit line clamp circuits, A is the bit line level waveform when the low level is the same in the previous cycle and the next cycle, and B is the waveform of the previous cycle. C is the bit line level waveform when the low level is higher in the previous cycle than in the subsequent cycle, and C is the bit line level waveform when the low level is lower in the previous cycle than in the subsequent cycle. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Scope of Claims] 1. A static semiconductor memory device formed on a semi-insulating substrate, comprising a clamp circuit that has a shot diode and clamps a power supply voltage according to the height of its shot barrier, and when reading, A semiconductor memory device characterized in that the clamp voltage is applied to a bit line as a low level read potential. 2 The above clamp circuit consists of a normally-off MESFET whose drain is connected to the power supply and whose gate receives a signal to control its conduction or non-conduction, a cathode, and an anode connected to the above.
A first Schottky diode connected to the source of the MESFET, and a second Schottky diode having an anode connected to the anode of the first Schottky diode and a cathode connected to the bit line. A semiconductor memory device according to claim 1. 3. The semiconductor memory device according to claim 2, wherein the shottock barrier height of the second shottock diode is lower than the shottock barrier height of the first shottock diode. 4 The gate of the above normally-off MESFET has
The above normally-off type when writing data
4. The semiconductor memory device according to claim 2, wherein a control signal is inputted to turn the MESFET into a non-conductive state.