JPH045978B2 - - Google Patents
Info
- Publication number
- JPH045978B2 JPH045978B2 JP58070493A JP7049383A JPH045978B2 JP H045978 B2 JPH045978 B2 JP H045978B2 JP 58070493 A JP58070493 A JP 58070493A JP 7049383 A JP7049383 A JP 7049383A JP H045978 B2 JPH045978 B2 JP H045978B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure mask
- cleaning
- section
- defect detection
- protective case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は半導体素子の製造に使用する露光マス
クの洗浄装置に係り、特に洗浄後の露光マスク上
に残留する塵埃及びシミ等によるパターン欠陥を
自動的に検出し、この欠陥を検出した結果とあら
かじめ設定されている良品と判断される残留パタ
ーン欠陥の基準とを比較して洗浄結果の良否を判
断し否の場合この露光マスクを再洗浄する装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a cleaning device for exposure masks used in the manufacture of semiconductor devices, and in particular, it automatically detects pattern defects caused by dust and stains remaining on the exposure mask after cleaning. The present invention relates to an apparatus for determining the quality of cleaning results by comparing the results of detecting defects with a preset standard for residual pattern defects that are determined to be non-defective products, and re-cleaning the exposure mask if the result is negative.
最近の超高集積度半導体デバイスの製造工程の
如く、高品質、無欠陥が要求される露光マスクの
洗浄後の品質管理は、半導体基板上から得られる
半導体素子の良品率を左右する重要な要素であ
り、特に洗浄後もなお露光マスク上に残留する塵
埃及び在留異物によるシミ等によるパターン欠陥
の管理は重要な要素である。 As with the manufacturing process of recent ultra-highly integrated semiconductor devices, quality control after cleaning of exposure masks, which requires high quality and no defects, is an important factor that influences the yield rate of semiconductor devices obtained from semiconductor substrates. Therefore, it is particularly important to control pattern defects caused by dust and stains caused by resident foreign matter that remain on the exposure mask even after cleaning.
従来の露光マスク洗浄装置における塵埃及びシ
ミによる欠陥の管理は、ある場合は洗浄後の露光
マスクを直接顕微鏡により全面を走査観察するこ
とによりなされ、また、ある場合は該露光マスク
を露光装置に装着し、ホトレジストを被覆した半
導体基板上に露光を施こすことにより得られるホ
トレジスト・パターンを顕微鏡により全面を走査
観察することによりなされている。この観察に要
する時間、労力は計りしれないものであり、これ
に伴いパターン欠陥を除去して良品露光マスクを
得る為に要する時間、労力もまた計りしれない。 In conventional exposure mask cleaning equipment, defects caused by dust and stains are managed in some cases by directly scanning and observing the entire surface of the exposure mask after cleaning using a microscope, and in other cases, the exposure mask is mounted on the exposure device. However, the photoresist pattern obtained by exposing a semiconductor substrate coated with photoresist to light is scanned and observed over the entire surface using a microscope. The time and effort required for this observation are immeasurable, and the time and effort required to remove pattern defects and obtain a good exposure mask are also immeasurable.
本発明は上述の従来の洗浄装置の持つ問題点を
除去し、塵埃、シミ等によるパターン欠陥のない
露光マスクを得ることによつて半導体素子の良品
率向上を図ることを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to improve the yield rate of semiconductor devices by eliminating the above-mentioned problems of the conventional cleaning apparatus and by obtaining an exposure mask free from pattern defects due to dust, stains, etc.
本発明によれば、複数の繰り返しパターンを有
する露光マスクが収納された露光マスク保護ケー
スが装着される露光マスク保護ケース収納部と、
この露光マスクに洗浄を施す洗浄部と、この洗浄
部から搬出された露光マスクをステージ上に載置
し、露光マスク上の順次選択される2つの繰返し
パターン対応する部分同士に光線を透過させてそ
の透過光を光学的に検知しそれぞれの検出結果を
比較してその差異により残留する塵埃やシミ等に
よるパターン欠陥を検出する欠陥検査をステージ
を移動させて露光マスク全面に施した後、残留パ
ターン欠陥を検出した結果とあらかじめ設定され
ている良品と判断される残留パターン欠陥の基準
とを比較して洗浄結果の良否を判断する自動欠陥
検出・処理部と、洗浄すべき前記露光マスクを露
光マスク保護ケース収納部から洗浄部へ搬入し又
洗浄後の露光マスクを洗浄部から自動欠陥検出・
処理部へ搬出し又洗浄結果が否の場合露光マスク
を自動欠陥検出・処理部から再度洗浄部へ搬入し
洗浄結果が良の場合露光マスクを自動欠陥検出・
処理部から露光マスク保護ケース収納部へ搬送す
る搬送手段とを有する露光マスク洗浄装置を得
る。これにより得られた良品露光マスクは、露光
マスク保護ケースにより浮遊塵埃等より保護され
る。 According to the present invention, an exposure mask protective case storage section is provided with an exposure mask protective case in which an exposure mask having a plurality of repeating patterns is stored;
A cleaning section that cleans this exposure mask, and an exposure mask carried out from this cleaning section are placed on a stage, and a light beam is transmitted through parts of the exposure mask that correspond to two sequentially selected repetitive patterns. The transmitted light is optically detected, the respective detection results are compared, and the remaining pattern is detected by moving the stage and performing a defect inspection on the entire surface of the exposure mask. An automatic defect detection/processing unit that determines the quality of the cleaning result by comparing the result of detecting defects with a preset standard for residual pattern defects that are determined to be non-defective products; The exposed mask is transported from the protective case storage section to the cleaning section, and the exposed mask after cleaning is automatically detected from the cleaning section.
If the cleaning result is negative, the exposure mask is transported to the processing section, and if the cleaning result is negative, the exposure mask is automatically detected for defects.If the cleaning result is good, the exposure mask is automatically detected for defects.
An exposure mask cleaning device is provided which has a conveying means for conveying an exposure mask from a processing section to an exposure mask protective case storage section. The thus obtained non-defective exposure mask is protected from floating dust and the like by the exposure mask protection case.
以下、本発明の一実施例を第1図及び第2図に
より詳細に説明する。第1図は露光マスク洗浄
部、自動欠陥検出・処理部、露光マスク保護ケー
ス収納部を含む露光マスク洗浄装置全体の概略図
を示し、第2図はその自動欠陥検出・処理部の欠
陥検出のための観察系の説明図である。図中1は
露光マスク洗浄装置、2は露光マスク洗浄部、3
は自動欠陥検出・処理部、4は露光マスク保護ケ
ース収納部、5は欠陥検出データ出力部、6は露
光マスク、7はレーザー・ヘツド(含スキヤナ)、
8はホト・デイテクタ、9はパターン欠陥、10
は対物レンズ、11はハーフ・ミラー、12はス
テージ・スキヤン方向、13はミラー、20は搬
送手段を各々示すものとする。 Hereinafter, one embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2. Figure 1 shows a schematic diagram of the entire exposure mask cleaning equipment including the exposure mask cleaning section, automatic defect detection/processing section, and exposure mask protective case storage section, and Figure 2 shows the defect detection section of the automatic defect detection/processing section. FIG. 2 is an explanatory diagram of an observation system for In the figure, 1 is an exposure mask cleaning device, 2 is an exposure mask cleaning section, and 3
is an automatic defect detection/processing section, 4 is an exposure mask protective case storage section, 5 is a defect detection data output section, 6 is an exposure mask, 7 is a laser head (including scanner),
8 is a photodetector, 9 is a pattern defect, 10
11 is an objective lens, 11 is a half mirror, 12 is a stage scan direction, 13 is a mirror, and 20 is a conveyance means.
本露出マスク洗浄装置1における露光マスクの
搬送は、次の順序で行なわれる。まず洗浄すべき
露光マスクが収納された露光マスク保護ケース
を、露光マスク保護ケース収納部4に装着する。
次に露光マスクは、自動的に露光マスク保護ケー
ス収納部4の露光マスク保護ケースから搬送手段
20により自動欠陥検出・処理部3を経由して露
光マスク洗浄部2へ搬入され、各種洗浄を施され
た後再び搬送手段20により洗浄部2から自動塵
埃検出・処理部3へ搬出され戻される。この洗浄
部2から搬出された露光マスク6は、自動欠陥検
出・処理部3内に設けられたスキヤン・ステージ
上に載置され、第2図に示す観察系で露光マスク
6上の複数の繰返しパターンが観察される。観察
系では、まず、露光マスク6上の繰り返しパター
ンの順次選択される2つのCRT上で重ね合わさ
れて露光マスク6の位置合わせがなされる。これ
によつて選択された2つのパターンの対応する部
分同士が対物レンズ10とホト・デイテクタ8間
にそれぞれ位置するようになされる。露光マスク
6の上方にあるレーザーヘツド7からのレーザー
光線は、ハーフミラー11で直進と反射の2つの
レーザー光線に分けられ、この反射したレーザー
光線がミラー13で反射され、これらのレーザー
光線が2つの対物レンズ10をそれぞれ経て、露
光マスク6の2つの繰り返しパターンの対応する
部分同士を透過しその透過光が2つのホト・デイ
テクタ8でそれぞれ光学的に検知され、2つの出
力が比較される。この観察系で得られる2つの出
力に差異がある場合は残留する塵埃やシミ等によ
るパターン欠陥と判断される。スキヤン・ステー
ジを第2図のステージ・スキヤン方向12にスキ
ヤンしながらこれと直交する方向に移動して、露
光マスク全面を走査し、このスキヤンニング操作
によつて露光マスク上の塵埃、シミ等によるパタ
ーン欠陥を検出する欠陥検査を施す。この検出過
程でパターン欠陥の大きさは2つの出力が異なつ
ている時間で検出できると共にパターン欠陥の数
は2つの出力が異なる回数で検出される。この残
留パターン欠陥の大きさと数とを検出した結果
は、自動欠陥検出・処理部3から欠陥検出データ
出力部5のCRTに出力されてオペレータが確認
できるとともに、自動欠陥検出・処理部3にあら
かじめ設定されている良品と判断される残留パタ
ーン欠陥の大きさと数の基準と比較され洗浄結果
の良否が判断される。自動欠陥検出・処理部3の
制御の下で基準の大きさ又は数以上の欠陥の除去
が確認されれば洗浄結果が良となり、露光マスク
は自動的に搬送手段20により自動欠陥検出・処
理部3から露光マスク保護ケース収納部4へ搬送
されその内の露光マスク保護ケースに収納され
る。洗浄結果が否となつた場合には、露光マスク
は自動欠陥検出・処理部3から再度洗浄部に搬送
手段20で搬入されて洗浄を施された後、自動欠
陥検出・処理部3へ搬送され、再びパターン欠陥
9の検査が行なわれる。再び洗浄結果が否の場合
は同様に洗浄及び欠陥検査を繰返し、自動欠陥検
出・処理3にあらかじめ設定された制限回数内の
洗浄で良となれば露光マスクは、自動欠陥検出・
処理部3から搬送されて、自動的に露光マスク保
護ケース収納部4内の露光マスク保護ケース内に
収納され、本装置における洗浄を完了する。 The exposure mask is transported in the exposure mask cleaning apparatus 1 in the following order. First, the exposure mask protective case containing the exposure mask to be cleaned is attached to the exposure mask protective case storage section 4.
Next, the exposure mask is automatically transported from the exposure mask protection case in the exposure mask protection case storage section 4 by the transport means 20 via the automatic defect detection/processing section 3 to the exposure mask cleaning section 2, where it is subjected to various cleaning processes. After that, the cleaning unit 2 is transported back to the automatic dust detection/processing unit 3 by the transport means 20. The exposure mask 6 carried out from the cleaning section 2 is placed on a scan stage provided in the automatic defect detection/processing section 3, and the observation system shown in FIG. A pattern is observed. In the observation system, first, the repeating patterns on the exposure mask 6 are superimposed on two sequentially selected CRTs to align the exposure mask 6. As a result, corresponding portions of the two selected patterns are positioned between the objective lens 10 and the photodetector 8, respectively. The laser beam from the laser head 7 above the exposure mask 6 is divided by a half mirror 11 into two laser beams, one straight and one reflected. The light passes through corresponding portions of the two repeated patterns of the exposure mask 6, and the transmitted light is optically detected by two photodetectors 8, and the two outputs are compared. If there is a difference between the two outputs obtained by this observation system, it is determined that the pattern is defective due to residual dust, stains, etc. The scan stage is scanned in the stage scan direction 12 in Fig. 2 and moved in a direction perpendicular to this direction to scan the entire surface of the exposure mask, and this scanning operation removes dust, stains, etc. on the exposure mask. Perform defect inspection to detect pattern defects. In this detection process, the size of a pattern defect can be detected at different times when the two outputs are different, and the number of pattern defects can be detected at different times when the two outputs are different. The results of detecting the size and number of residual pattern defects are output from the automatic defect detection/processing section 3 to the CRT of the defect detection data output section 5 for confirmation by the operator, and are also sent to the automatic defect detection/processing section 3 in advance. The quality of the cleaning result is determined by comparing the size and number of residual pattern defects that are determined to be non-defective. If it is confirmed that defects larger than the standard size or number have been removed under the control of the automatic defect detection/processing section 3, the cleaning result is good, and the exposure mask is automatically transferred to the automatic defect detection/processing section by the conveying means 20. 3 to the exposure mask protective case storage section 4 and stored in the exposure mask protective case therein. If the cleaning result is negative, the exposure mask is transported from the automatic defect detection/processing section 3 to the cleaning section again by the transport means 20, where it is cleaned, and then transported to the automatic defect detection/processing section 3. , the pattern defect 9 is inspected again. If the cleaning result is negative again, the cleaning and defect inspection are repeated in the same way, and if the cleaning results are good within the limit number of times set in advance in automatic defect detection/processing 3, the exposure mask is automatically inspected.
It is transported from the processing section 3 and automatically stored in the exposure mask protective case in the exposure mask protective case storage section 4, completing cleaning in this apparatus.
以上の様に、洗浄後の露光マスク上の残留塵埃
及び残留異物によるシミ等の欠陥は、パターン比
較検査機構によりその数と大きさが管理され、本
装置より供給される露光マスクは、良品であるこ
とが確認されたものとなり、人手による検査時に
付着していた塵埃、シミ等がなくなり、この露光
マスクを使用することにより生産される半導体素
子の良品率を飛躍的に向上せしめることが可能と
なる。また縮小投影式露光装置(ステツパー)へ
の適用に際しては、露光マスク保護ケースに良品
を収納したまま直接取扱うことができる為、洗浄
での良品確認からステツパーへの装着までの間に
おける一切の塵埃の付着の可能性を排除すること
が可能となり、半導体基板上に転写される繰返し
パターン中の共通欠陥を容易に排除でき、ステツ
パーの利用効率も飛躍的に向上せしめることが可
能となる。従つて、本発明の実用上の効果は極め
て大きい。 As mentioned above, the number and size of defects such as stains caused by residual dust and foreign matter on the exposure mask after cleaning are managed by the pattern comparison inspection mechanism, and the exposure mask supplied from this device is of good quality. This has been confirmed, and the dust and stains that were present during manual inspection are now gone, making it possible to dramatically improve the quality of semiconductor devices produced by using this exposure mask. Become. In addition, when applied to a reduction projection exposure system (stepper), it is possible to directly handle a good product while it is stored in the exposure mask protective case, so no dust is removed from the time the product is confirmed to be good by cleaning until it is attached to the stepper. It becomes possible to eliminate the possibility of adhesion, easily eliminate common defects in repeated patterns transferred onto a semiconductor substrate, and dramatically improve the efficiency of use of the stepper. Therefore, the practical effects of the present invention are extremely large.
第1図は本発明の一実施例の概略図であり、露
光マスク洗浄装置全体を示し、第2図はその一部
である自動欠陥検出・処理部の欠陥検出の説明図
である。
図中、1……露光マスク洗浄装置、2……露光
マスク洗浄部、3……自動欠陥検出・処理部、4
……露光マスク保護ケース収納部、5……欠陥検
出データ出力部、6……露光マスク、7……レー
ザー・ヘツド(含スキヤナ)、8……ホト・デイ
テクタ、9……パターン欠陥、10……対物レン
ズ、11……ハーフ・ミラー、12……ステー
ジ・スキヤン方向、13……ミラー、20……搬
送手段。
FIG. 1 is a schematic diagram of an embodiment of the present invention, showing the entire exposure mask cleaning apparatus, and FIG. 2 is an explanatory diagram of defect detection in an automatic defect detection/processing section that is a part of the apparatus. In the figure, 1... Exposure mask cleaning device, 2... Exposure mask cleaning section, 3... Automatic defect detection/processing section, 4
... Exposure mask protective case storage section, 5 ... Defect detection data output section, 6 ... Exposure mask, 7 ... Laser head (including scanner), 8 ... Photo detector, 9 ... Pattern defect, 10 ... ...Objective lens, 11...Half mirror, 12...Stage scan direction, 13...Mirror, 20...Transporting means.
Claims (1)
が収納された露光マスク保護ケースが装着される
露光マスク保護ケース収納部と、前記露光マスク
に洗浄を施す洗浄部と、前記洗浄部から搬出され
た前記露光マスクをステージ上に載置し、前記露
光マスク上の順次選択される2つの前記繰返しパ
ターンの対応する部分同士に光線を透過させてそ
の透過光を光学的に検知しそれぞれの検出結果を
比較してその差異により残留する塵埃やシミ等に
よるパターン欠陥を検出する欠陥検査を前記ステ
ージを移動させて前記露光マスク全面に施した
後、前記残留パターン欠陥を検出した結果とあら
かじめ設定されている良品と判断される残留パタ
ーン欠陥の基準とを比較して洗浄結果の良否を判
断する自動欠陥検出・処理部と、洗浄すべき前記
露光マスクを前記露光マスク保護ケース収納部か
ら前記洗浄部へ搬入し又洗浄後の前記露光マスク
を前記洗浄部から前記自動欠陥検出・処理部へ搬
出し又前記洗浄結果が否の場合前記露光マスクを
前記自動欠陥検出・処理部から再度前記洗浄部へ
搬入し前記洗浄結果が良の場合前記露光マスクを
前記自動欠陥検出・処理部から前記露光マスク保
護ケース収納部へ搬送する搬送手段とを有するこ
とを特徴とする露光マスク洗浄装置。1. An exposure mask protective case storage section into which an exposure mask protective case containing an exposure mask having a plurality of repeating patterns is mounted, a cleaning section that cleans the exposure mask, and the exposure mask carried out from the cleaning section. is placed on a stage, a light beam is transmitted through corresponding portions of the two sequentially selected repetitive patterns on the exposure mask, the transmitted light is optically detected, and the respective detection results are compared. After performing a defect inspection to detect pattern defects due to residual dust, stains, etc. due to the difference, by moving the stage and performing a defect inspection on the entire surface of the exposure mask, the residual pattern defects are detected and the product is determined to be non-defective as determined in advance. an automatic defect detection/processing unit that determines the quality of the cleaning result by comparing it with a standard of residual pattern defects, and an automatic defect detection/processing unit that carries the exposure mask to be cleaned from the exposure mask protective case storage unit to the cleaning unit and cleans it. The subsequent exposure mask is transported from the cleaning section to the automatic defect detection/processing section, and if the cleaning result is negative, the exposure mask is transported from the automatic defect detection/processing section to the cleaning section again to check the cleaning result. An exposure mask cleaning apparatus comprising: a conveying means for conveying the exposure mask from the automatic defect detection/processing section to the exposure mask protective case storage section when the defect is good.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58070493A JPS59195644A (en) | 1983-04-21 | 1983-04-21 | Device for washing exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58070493A JPS59195644A (en) | 1983-04-21 | 1983-04-21 | Device for washing exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59195644A JPS59195644A (en) | 1984-11-06 |
| JPH045978B2 true JPH045978B2 (en) | 1992-02-04 |
Family
ID=13433097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58070493A Granted JPS59195644A (en) | 1983-04-21 | 1983-04-21 | Device for washing exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59195644A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695511B2 (en) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | Washing and drying treatment method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441158B2 (en) * | 1973-07-14 | 1979-12-06 | ||
| JPS55102233A (en) * | 1979-01-30 | 1980-08-05 | Matsushita Electric Ind Co Ltd | Removing method of dust |
-
1983
- 1983-04-21 JP JP58070493A patent/JPS59195644A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59195644A (en) | 1984-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4595289A (en) | Inspection system utilizing dark-field illumination | |
| JP4722244B2 (en) | Apparatus for processing a substrate according to a predetermined photolithography process | |
| JP3183046B2 (en) | Foreign particle inspection apparatus and method for manufacturing semiconductor device using the same | |
| KR100788055B1 (en) | Substrate Defect Detection Apparatus and Method and Substrate Identification Number Detection Method | |
| JPH07209202A (en) | Surface state inspection equipment, exposure apparatus employing it, and production of device using the exposure apparatus | |
| JPH061370B2 (en) | Mask defect inspection system | |
| JPH0815169A (en) | Foreign object inspection apparatus and semiconductor device manufacturing method using the same | |
| KR102831993B1 (en) | Defect inspection apparatus, method of inspecting defect and method for manufacturing photomask blank | |
| EP0065411B1 (en) | On-machine reticle inspection device | |
| JPH045979B2 (en) | ||
| JPS59195644A (en) | Device for washing exposure mask | |
| JPH0979991A (en) | Pattern inspection device, defect inspection device, and pattern inspection method | |
| JPS6138448B2 (en) | ||
| JPH0951028A (en) | Photo mask management system | |
| JPH06258235A (en) | Surface inspection device | |
| US7457454B1 (en) | Detailed grey scale inspection method and apparatus | |
| JP2919192B2 (en) | Reticle cleaning equipment | |
| WO2006019446A2 (en) | Double inspection of reticle or wafer | |
| JPH11191524A (en) | Photolitho process equipment | |
| JPH0815167A (en) | Foreign object inspection apparatus and semiconductor device manufacturing method using the same | |
| Ishihara et al. | High-speed reticle qualification system | |
| JPS58164227A (en) | Inspection of pattern defect | |
| JPH0815168A (en) | Foreign object inspection apparatus and semiconductor device manufacturing method using the same | |
| JPS60167424A (en) | Inspecting apparatus | |
| JPS6161420A (en) | Inspecting device for foreign substance on exposure mask |