JPH046095B2 - - Google Patents
Info
- Publication number
- JPH046095B2 JPH046095B2 JP61024801A JP2480186A JPH046095B2 JP H046095 B2 JPH046095 B2 JP H046095B2 JP 61024801 A JP61024801 A JP 61024801A JP 2480186 A JP2480186 A JP 2480186A JP H046095 B2 JPH046095 B2 JP H046095B2
- Authority
- JP
- Japan
- Prior art keywords
- side frame
- plate
- semiconductor device
- semiconductor
- bottom plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明は、例えばダイオードブリツジあるいは
サイリスタモジユールなどにおけるように、熱良
導性底板と絶縁性側枠よりなる容器内に半導体素
子を収容し、素子を底板上に固定する半導体装置
に関する。
The present invention relates to a semiconductor device, such as a diode bridge or thyristor module, in which a semiconductor element is housed in a container consisting of a thermally conductive bottom plate and an insulating side frame, and the element is fixed on the bottom plate.
第2図は、従来の上述のような半導体装置を示
し、放熱性底板1上に、絶縁板3をはんだ9で固
着し、その上にヒートシンク4、半導体チツプ5
をそれぞれはんだ9でろう付けし、さらにチツプ
電極にリード線6、そのリード線に端子導体7を
それぞれはんだ9でろう付けする。図には一つの
素子のみを示しているが、複合半導体装置では複
数の素子について、同様な工程を行う。このあと
絶縁性側枠2を底板1の上に固定し、注型樹脂8
を充填し半導体チツプを被覆する。しかしこのよ
うな半導体装置を組立てる際には、ろう付けの際
に各部品の位置決めのために治具が必要であり工
程が複雑である。また、半導体チツプに対する注
型樹脂の影響を避けるためにチツプ表面にガラス
パツシベーシヨンが必要で高価であり、しかも
2000V以上高耐圧素子に対してはそれだけでは十
分な安定性が得られない。
FIG. 2 shows a conventional semiconductor device as described above, in which an insulating plate 3 is fixed on a heat dissipating bottom plate 1 with solder 9, and a heat sink 4 and a semiconductor chip 5 are placed on top of the insulating plate 3.
are respectively brazed with solder 9, and further, a lead wire 6 is soldered to the chip electrode, and a terminal conductor 7 is brazed to the lead wire with solder 9, respectively. Although only one element is shown in the figure, similar steps are performed for a plurality of elements in a composite semiconductor device. After this, the insulating side frame 2 is fixed on the bottom plate 1, and the casting resin 8 is
to coat the semiconductor chip. However, when assembling such a semiconductor device, a jig is required to position each component during brazing, making the process complicated. In addition, in order to avoid the influence of the casting resin on the semiconductor chip, glass packaging is required on the chip surface, which is expensive and
For high-voltage elements of 2000V or more, sufficient stability cannot be obtained by itself.
本発明は、上述の問題を解決して組立容易であ
り、また容器を気密に閉塞できて従来より製造さ
れているハーメチツク封止半導体素子に用いられ
ている接合被覆樹脂(JCR)により表面安定化し
たチツプも使用できる半導体装置を提供すること
を目的とする。
The present invention solves the above-mentioned problems, is easy to assemble, can hermetically close the container, and has surface stabilization using bonding coating resin (JCR), which is used in conventionally manufactured hermetically sealed semiconductor devices. The object of the present invention is to provide a semiconductor device that can also use a chip made of chips.
本発明による半導体装置は、熱良導性底板上に
半導体素子に対する位置決め用凸部を有する底部
と一体化された耐熱性絶縁物よりなる側枠が底部
によつて固着され、側枠上部は気密にろう付けさ
れた絶縁性蓋板によつて閉塞され、半導体素子に
接続された端子導体が蓋板を貫通し、蓋板の貫通
孔周辺部と気密にろう付けされているもので、側
枠が底部を含めて耐熱性材料からなるため、半導
体素子基体のろう付け時の位置決め治具として使
用でき、また半導体素子が容器内に気密に封止さ
れるため、ガス封入による高耐圧化も可能で、上
記の目的を達成することができる。
In the semiconductor device according to the present invention, a side frame made of a heat-resistant insulator integrated with a bottom part having a protrusion for positioning the semiconductor element on a heat-conducting bottom plate is fixed by the bottom part, and an upper part of the side frame is airtight. The terminal conductor connected to the semiconductor element passes through the cover plate and is airtightly brazed to the area around the through hole in the cover plate. Since the container, including the bottom part, is made of heat-resistant material, it can be used as a positioning jig when brazing the semiconductor element substrate.Also, since the semiconductor element is hermetically sealed inside the container, high pressure resistance can be achieved by filling it with gas. The above purpose can be achieved.
第1図は本発明の一実施例を示し、第2図と共
通の部分には同一の符号が付されている。この半
導体装置においては、側枠2はセラミツクのよう
な300℃以上の耐熱性のある材料からなり、さら
に底部21と一体化されている。この底部は、第
2図に示す従来装置の絶縁板3の役目をすると共
に、上部に凸部10を有し、これが上面にはんだ
9により固着されるヒートシンク4の位置決めに
役立つので、組立治具を必要とせずに炉に装入す
るだけではんだ付けができ、はんだ付け後の治具
取外しの必要もない。第1図bは本発明による蓋
板11を示し、例えばセラミツクからなつて周辺
にメタライズ部31を有する。この蓋板を側枠の
上にかぶせ、そのメタライズ部31と側枠2の上
縁に設けたメタライズ部32とを気密にはんだ付
けする。同時にヒートシンク4上の半導体チツプ
5にリード線6を介して接続された端子導体7を
蓋板11の貫通孔12を通し、この貫通孔周囲に
設けたメタライズ部33と導体7をはんだにより
気密にろう付けする。側枠の底部21は熱良導性
の放熱用底板1に接着などによつて固着する。こ
れにより半導体素子は側枠2、底部21および蓋
板11からなる容器中に気密に封止される。従つ
てその中へガス封入が可能であり、JCRにより表
面安定化した半導体チツプ5によつて2000V以上
の耐圧を得ることができる。
FIG. 1 shows an embodiment of the present invention, and parts common to those in FIG. 2 are given the same reference numerals. In this semiconductor device, the side frame 2 is made of a material such as ceramic that is heat resistant to 300° C. or higher, and is further integrated with the bottom portion 21. This bottom part serves as the insulating plate 3 of the conventional device shown in FIG. 2, and also has a convex part 10 on the top part, which is useful for positioning the heat sink 4 fixed to the top surface by solder 9. Soldering can be done simply by charging the soldering device into the furnace, and there is no need to remove the jig after soldering. FIG. 1b shows a lid plate 11 according to the invention, which is made of ceramic, for example, and has a metallized part 31 on the periphery. This cover plate is placed over the side frame, and the metallized part 31 and the metallized part 32 provided on the upper edge of the side frame 2 are hermetically soldered. At the same time, the terminal conductor 7 connected to the semiconductor chip 5 on the heat sink 4 via the lead wire 6 is passed through the through hole 12 of the cover plate 11, and the metallized portion 33 provided around the through hole and the conductor 7 are made airtight by soldering. braze. The bottom part 21 of the side frame is fixed to the heat dissipating bottom plate 1 with good thermal conductivity by adhesive or the like. Thereby, the semiconductor element is hermetically sealed in the container consisting of the side frame 2, the bottom part 21, and the lid plate 11. Therefore, it is possible to fill gas therein, and with the semiconductor chip 5 whose surface is stabilized by JCR, a withstand voltage of 2000V or more can be obtained.
本発明によれば、耐熱性絶縁材料からなる容器
下部を用いて半導体素子と放熱用底板との間の絶
縁板が省略でき、また耐熱性があるため半導体素
子のろう付け時における位置決め用治具としても
役立つ。そしてこの容器下部とろう付けにより気
密に結合できる蓋板を用いることによりハーメチ
ツク封止素子と同様のガス封止も可能で、JCR安
定化処理のメサ形チツプによつて高耐圧特性も備
えられる半導体装置を低い価格で得ることができ
る。
According to the present invention, by using the lower part of the container made of a heat-resistant insulating material, the insulating plate between the semiconductor element and the heat dissipation bottom plate can be omitted, and since it is heat-resistant, it is possible to use a positioning jig when brazing the semiconductor element. Also useful. By using a lid plate that can be airtightly connected to the lower part of the container by brazing, gas sealing similar to that of a hermetic sealing element is possible, and the mesa-shaped chip with JCR stabilization treatment also provides a semiconductor with high withstand voltage characteristics. You can get the equipment at a low price.
第1図は本発明の一実施例を示し、aが一部破
砕斜視図、bが蓋板の斜視図、第2図は従来例の
斜視図である。
1:底板、2:側枠、3:絶縁性底部、4:ヒ
ートシンク、5:半導体チツプ、6:リード線、
7:端子導体、9:はんだ、10:位置決め用凸
部、11:蓋板、12:貫通孔、31,32,3
3:メタライズ部。
FIG. 1 shows an embodiment of the present invention, in which a is a partially exploded perspective view, b is a perspective view of a lid plate, and FIG. 2 is a perspective view of a conventional example. 1: Bottom plate, 2: Side frame, 3: Insulating bottom, 4: Heat sink, 5: Semiconductor chip, 6: Lead wire,
7: Terminal conductor, 9: Solder, 10: Positioning protrusion, 11: Cover plate, 12: Through hole, 31, 32, 3
3: Metallization part.
Claims (1)
半導体素子を収容し、素子を底板上に絶縁して固
定するものにおいて、半導体素子に対する位置決
め用凸部を有する底部と一体化された耐熱性絶縁
物よりなる側枠が底部によつて前記底板上に固着
され、側枠上部は気密にろう付けされた絶縁性蓋
板によつて閉塞され、半導体素子に接続された端
子導体が蓋板を貫通し、蓋板の貫通孔周辺部と気
密にろう付けされたことを特徴とする半導体装
置。1. A container that houses a semiconductor device in a container consisting of a thermally conductive bottom plate and an insulating side frame, and insulates and fixes the device on the bottom plate, which is integrated with the bottom having a protrusion for positioning the semiconductor device. A side frame made of a heat-resistant insulator is fixed to the bottom plate by the bottom part, and the upper part of the side frame is closed by an insulating cover plate that is brazed to the top of the side frame, and the terminal conductor connected to the semiconductor element is connected to the cover plate. A semiconductor device that penetrates a plate and is airtightly brazed to the periphery of a through hole of a cover plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61024801A JPS62183148A (en) | 1986-02-06 | 1986-02-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61024801A JPS62183148A (en) | 1986-02-06 | 1986-02-06 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62183148A JPS62183148A (en) | 1987-08-11 |
| JPH046095B2 true JPH046095B2 (en) | 1992-02-04 |
Family
ID=12148297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61024801A Granted JPS62183148A (en) | 1986-02-06 | 1986-02-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62183148A (en) |
-
1986
- 1986-02-06 JP JP61024801A patent/JPS62183148A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62183148A (en) | 1987-08-11 |
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