JPH0461076B2 - - Google Patents
Info
- Publication number
- JPH0461076B2 JPH0461076B2 JP1170491A JP17049189A JPH0461076B2 JP H0461076 B2 JPH0461076 B2 JP H0461076B2 JP 1170491 A JP1170491 A JP 1170491A JP 17049189 A JP17049189 A JP 17049189A JP H0461076 B2 JPH0461076 B2 JP H0461076B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film forming
- film
- forming chamber
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 67
- 239000010409 thin film Substances 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 17
- 239000003595 mist Substances 0.000 claims description 11
- 239000000243 solution Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、霧化した原料溶液を、加熱された基
板に吹き付け、薄膜を形成する霧化薄膜形成装置
に関し、特に基板の幅方向の膜厚のばらつきが小
さな透明導電膜を形成することができる装置に関
する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to an atomized thin film forming apparatus that sprays an atomized raw material solution onto a heated substrate to form a thin film, and particularly relates to an atomized thin film forming apparatus that sprays an atomized raw material solution onto a heated substrate to form a thin film. The present invention relates to an apparatus capable of forming a transparent conductive film with small variations in thickness.
［従来の技術］
太陽電池、液晶表示装置、プラズマ表示装置等
に用いられる透明導電膜は、酸化錫や酸化インジ
ウム錫の薄膜により形成される。この透明導電膜
は、霧化装置によつて生じた原料溶液の霧を、成
膜用ノズルから加熱された基板に向けて放出し、
加熱された基板上で反応、成膜させる。[Prior Art] Transparent conductive films used in solar cells, liquid crystal display devices, plasma display devices, etc. are formed from thin films of tin oxide or indium tin oxide. This transparent conductive film is produced by emitting a mist of raw material solution generated by an atomization device from a film-forming nozzle toward a heated substrate.
React and form a film on a heated substrate.
この方法で透明導電膜を形成する場合に用いら
れている霧化薄膜形成装置の一例を、第１図と第
５図に基づいて説明する。 An example of an atomized thin film forming apparatus used for forming a transparent conductive film using this method will be explained based on FIGS. 1 and 5.
この霧化薄膜形成装置では、霧化器１によつて
原料溶液を霧化し、これを成膜用ノズル３のスリ
ツト状の吐出口３ａから放出させる。成膜用ノズ
ル３の吐出口３ａの上方には、成膜室４が設けら
れ、そこに霧化された原料溶液が漂う。上記基板
６は、その表面が上記成膜室４の天面を形成する
よう、成膜室４の上を順次連なりながら第１図に
おいて、左から右へと保持されながら搬送され
る。この成膜室４で天面を形成する位置にある基
板６は、均熱板７を介して背後のヒーター８によ
つて所定の温度に加熱される。 In this atomized thin film forming apparatus, a raw material solution is atomized by an atomizer 1 and discharged from a slit-shaped discharge port 3a of a film forming nozzle 3. A film forming chamber 4 is provided above the discharge port 3a of the film forming nozzle 3, and an atomized raw material solution floats therein. The substrates 6 are conveyed while being held from left to right in FIG. 1 while being successively connected above the film forming chamber 4 so that their surfaces form the top surface of the film forming chamber 4. A substrate 6 located at a position forming the top surface of the film forming chamber 4 is heated to a predetermined temperature by a heater 8 located behind it via a heat equalizing plate 7.
この装置には、基板入口１９側からガラス板等
の基板６を導入し、成膜室４を経て基板出口２０
から導出されるよう順次搬送される。成膜室４で
は、成膜用ノズル３の先端が基板６の主面に近接
して設けられ、これから成膜室４に放出された霧
状の原料溶液は、排出口５に向けて緩やかに流
れ、その間に基板６の表面に接触する。そして、
基板６の表面で、溶液中の原料が空気中の酸素、
或いは原料溶液中の水分と反応し、上記基板６の
表面に酸化物の薄膜が形成される。また、基板６
の表面の成膜に寄与しなかつた霧は、排出口５か
ら排出される。 In this apparatus, a substrate 6 such as a glass plate is introduced from the substrate inlet 19 side, passes through the film forming chamber 4, and then enters the substrate outlet 20.
They are sequentially conveyed so as to be derived from. In the film-forming chamber 4, the tip of the film-forming nozzle 3 is provided close to the main surface of the substrate 6, and the atomized raw material solution discharged from this into the film-forming chamber 4 is slowly directed toward the discharge port 5. during which it contacts the surface of the substrate 6. and,
On the surface of the substrate 6, the raw materials in the solution are exposed to oxygen in the air,
Alternatively, a thin oxide film is formed on the surface of the substrate 6 by reacting with moisture in the raw material solution. In addition, the board 6
The mist that does not contribute to film formation on the surface is discharged from the discharge port 5.
第５図で示すように、成膜室４の中で基板６の
両側縁が、成膜室４の両側の基板保持部１３に保
持されて搬送されるが、従来の装置では、上記基
板保持部１３で形成される成膜室４の対向する両
側面は、何れも垂直に立つている。従つて、上記
基板６上に実際に成膜される部分の幅、つまり成
膜中に基板保持部１３で保持される基板６の両端
の部分を除いた有効成膜幅ａと、上記基板保持部
１３の対向する壁面で形成される成膜室４の両側
面間の幅とは等しかつた。 As shown in FIG. 5, both edges of the substrate 6 are held in the film forming chamber 4 by the substrate holders 13 on both sides of the film forming chamber 4, and the substrate 6 is transported. Both opposing sides of the film forming chamber 4 formed by the section 13 stand vertically. Therefore, the width of the portion actually deposited on the substrate 6, that is, the effective deposition width a excluding the portions at both ends of the substrate 6 held by the substrate holder 13 during deposition, and the substrate holder The widths between both sides of the film forming chamber 4 formed by the opposing wall surfaces of the portion 13 were equal.
［発明が解決しようとする課題］
しかし、上記従来の装置でガラス板等の基板６
の表面に透明導電膜を形成した場合、第６図ｄで
示されたように、基板の中央部の透明導電膜の膜
厚が厚く、両側部の透明導電膜の膜厚がこれに比
べて極端に薄くなるという欠点があつた。これ
は、成膜室４の中で層流を形成して流れる霧は、
成膜室４の側壁の抵抗を受けて、特に成膜室４の
後方部において両側部での霧の単位流路断面積当
りの流量が中央部に比べて少なくなるためと考え
られる。[Problems to be Solved by the Invention] However, with the above-mentioned conventional device, the substrate 6 such as a glass plate, etc.
When a transparent conductive film is formed on the surface of the substrate, as shown in FIG. The drawback was that it was extremely thin. This means that the mist flowing in a laminar flow in the film forming chamber 4 is
This is considered to be because the flow rate per unit flow path cross-sectional area of the mist at both sides of the film forming chamber 4 is smaller than that at the center, especially in the rear part of the film forming chamber 4 due to the resistance of the side walls of the film forming chamber 4.
このような透明導電膜の膜厚の不均一状態が生
じると、基板６の両側に干渉縞が現れ、外観上好
ましくないばかりでなく、特に膜厚の薄い基板６
の両側部では、透明導電膜として必要な特性が得
られない。このため、膜厚の薄い基板６の両側部
分を除去して使用している。例えばこれまでは、
基板６の中央部の膜厚に対して±５％の膜厚の違
いが生じる両側の部分を除去して使用している
が、上記従来の装置でガラス基板上に酸化錫膜を
形成した場合に、この基準で除去されるのは、成
膜中に保持される基板６の両端の部分を除いた有
効成膜幅の約30％にも及ぶ。従つて、実際に使用
できるのは、基板６の有効成膜幅の約70％に過ぎ
ず、製品の歩留りが悪いという欠点があつた。 When such non-uniformity in the thickness of the transparent conductive film occurs, interference fringes appear on both sides of the substrate 6, which not only has an unfavorable appearance, but also particularly on the thin substrate 6.
The properties required for a transparent conductive film cannot be obtained on both sides of the film. For this reason, both sides of the thin substrate 6 are removed for use. For example, until now,
The parts on both sides of the substrate 6, which have a difference of ±5% in film thickness with respect to the film thickness at the center part, are removed before use, but when a tin oxide film is formed on a glass substrate using the above-mentioned conventional apparatus. In addition, based on this standard, about 30% of the effective width of the film formed, excluding the portions at both ends of the substrate 6 held during film formation, is removed. Therefore, only about 70% of the effective film forming width of the substrate 6 can be actually used, resulting in a disadvantage that the product yield is low.
本発明の目的は、上記課題を解消することので
きる霧化薄膜形成装置を提供する事にある。 An object of the present invention is to provide an atomized thin film forming apparatus that can solve the above problems.
［課題を解消するための手段］
すなわち、上記目的を達成するための本発明に
よる手段の要旨は、薄膜の原料溶液を霧化する霧
化器１と、原料溶液の霧の吐出口３ａを上方に向
けて開口させた成膜用ノズル３と、同成膜ノズル
３の吐出口３ａの上を通過するよう一方向に搬送
される基板６を天面とする成膜室４と、成膜室４
にある上記基板６をその上面から加熱する手段と
からなる霧化薄膜形成装置において、成膜室４の
両側面側の幅ｂを、基板６の有効成膜幅ａより広
くした霧化薄膜形成装置である。[Means for Solving the Problems] That is, the gist of the means according to the present invention for achieving the above object is to provide an atomizer 1 that atomizes a raw material solution for a thin film, and an atomizer 1 that atomizes a raw material solution for a thin film, and a discharge port 3a for mist of the raw material solution that A film forming chamber 4 whose top surface is a substrate 6 that is conveyed in one direction so as to pass over the discharge port 3a of the film forming nozzle 3, and a film forming chamber 4
In the atomized thin film forming apparatus comprising means for heating the substrate 6 from the upper surface thereof, the width b on both side surfaces of the film forming chamber 4 is wider than the effective film forming width a of the substrate 6. It is a device.
［作用］
成膜用ノズル３から成膜室４に放出された霧
は、成膜室４の中を層流となつて排出口５側へ流
れていく。ここで、本発明による霧化薄膜形成装
置では、成膜室４の両側面間の幅ｂを、基板６の
有効成膜幅ａよりも広くしてあるため、基板６に
接触しない成膜室４の最も外側の部分で成膜室４
の側壁の抵抗を受け、単位断面積当りの流量が小
さくなるが、それより内側の霧が基板６の表面に
接触する部分では、上記側壁の抵抗の影響が小さ
く、その部分での単位流路断面積当りの霧の流量
は、成膜室４の中央部の流量とほぼ等しくなる。
これにより、基板６の両側に形成される薄膜の膜
厚が薄くならず、幅方向における薄膜の膜厚が平
均化される。[Operation] The mist discharged from the film-forming nozzle 3 into the film-forming chamber 4 forms a laminar flow inside the film-forming chamber 4 and flows toward the discharge port 5 side. Here, in the atomized thin film forming apparatus according to the present invention, since the width b between both sides of the film forming chamber 4 is made wider than the effective film forming width a of the substrate 6, the film forming chamber does not come into contact with the substrate 6. The outermost part of 4 is the film forming chamber 4.
The flow rate per unit cross-sectional area becomes smaller due to the resistance of the sidewalls, but in the area where the mist contacts the surface of the substrate 6, the influence of the resistance of the sidewalls is small and the flow rate per unit cross-sectional area decreases. The flow rate of mist per cross-sectional area is approximately equal to the flow rate at the center of the film forming chamber 4.
As a result, the thickness of the thin film formed on both sides of the substrate 6 is not reduced, and the thickness of the thin film in the width direction is averaged.
［実施例］
次に、第１図〜第４図を参照しながら、本発明
の実施例について具体的に説明する。[Example] Next, an example of the present invention will be specifically described with reference to FIGS. 1 to 4.
これら図面において、ガラス板等の基板６が両
側を保持された状態で図において左から右へと搬
送される。基板入口１９から基板出口２０に至る
基板６の搬送経路には、当該基板６を天面とし、
両側及び底面をフレーム１１，１２で囲まれたト
ンネル状の予備加熱室１３、成膜室４及び基板搬
出室１０が順次連続して形成されている。 In these drawings, a substrate 6 such as a glass plate is conveyed from left to right in the drawings while being held on both sides. The transport path of the substrate 6 from the substrate inlet 19 to the substrate outlet 20 has the substrate 6 as the top surface,
A tunnel-shaped preheating chamber 13 surrounded by frames 11 and 12 on both sides and the bottom, a film forming chamber 4, and a substrate unloading chamber 10 are successively formed.
薄膜形成用の原料溶液を霧化する霧化器１を備
え、この霧化器１の上方には上に向けて成膜用ノ
ズル３が延長して設けられ、この成膜用ノズル３
の上に上記成膜室４が配置されている。上記霧化
器１に於いて霧化された原料溶液の霧は、上記ノ
ズル３の吐出口３ａから成膜室４の中に放出され
る。成膜室４の基板搬出室１０寄り側には、排気
路５が形成され、基板６の表面の薄膜の成膜に寄
与しなかつた霧状の原料溶液がこの排気路５から
排出される。 It is equipped with an atomizer 1 that atomizes a raw material solution for forming a thin film, and a film forming nozzle 3 is provided above the atomizer 1 to extend upward.
The film forming chamber 4 is arranged above. The mist of the raw material solution atomized in the atomizer 1 is discharged into the film forming chamber 4 from the discharge port 3a of the nozzle 3. An exhaust path 5 is formed on the side of the film forming chamber 4 closer to the substrate unloading chamber 10, and the atomized raw material solution that does not contribute to the formation of a thin film on the surface of the substrate 6 is exhausted from the exhaust path 5.
予備加熱室１３、成膜室４及び基板搬出室１０
において、搬送される基板６の上面側には熱伝導
良好な均熱板７が設けられ、さらにその背後にヒ
ーター８が設けられている。このヒーター８が発
熱することにより、上記均熱板７を介して基板６
が加熱される。 Preheating chamber 13, film forming chamber 4, and substrate unloading chamber 10
A heat-uniforming plate 7 with good heat conduction is provided on the upper surface side of the substrate 6 being transported, and a heater 8 is further provided behind it. As this heater 8 generates heat, the substrate 6 is heated through the heat equalizing plate 7.
is heated.
本発明では、上記成膜室４の対向する両側面間
の幅ｂを基板６の有効成膜幅ａより広くする。具
体的には、第２図〜第４図で示すように、基板保
持部１３の基板６の両側を保持する部分のみを内
側に突出させ、その下側を両側に窪ませて、成膜
室４の両側面の間隔、つまりその幅ｂを、上記基
板保持部１３で保持された両側の部分を除く有効
成膜幅ａより広くしてある。 In the present invention, the width b between the opposing sides of the film forming chamber 4 is made wider than the effective film forming width a of the substrate 6. Specifically, as shown in FIGS. 2 to 4, only the portion of the substrate holder 13 that holds both sides of the substrate 6 is made to protrude inwardly, and the lower side thereof is recessed on both sides to form a film forming chamber. The distance between the two side surfaces of the substrate 4, that is, the width b thereof is made wider than the effective film forming width a excluding the portions on both sides held by the substrate holding portion 13.
第２図で示された実施例では、上記基板保持部
１３の対向する側面の下側をコ字形に窪ませてそ
の下部の幅ｂを、基板６の有効成膜幅ａより広く
している。第３図で示された実施例では、基板保
持部１３の対向する側面に勾配を持たせてその下
部の幅ｂも、基板６の有効成膜幅ａより広くして
いる。さらに、第４図で示された実施例では、上
記基板保持部１３の対向する側面の下部を曲面状
に窪ませてその下部の幅ｂを基板６の有効成膜幅
ａより広くしている。 In the embodiment shown in FIG. 2, the lower sides of the opposing sides of the substrate holder 13 are recessed in a U-shape, and the width b of the lower part is made wider than the effective film forming width a of the substrate 6. . In the embodiment shown in FIG. 3, the opposing side surfaces of the substrate holder 13 are sloped so that the width b of the lower part thereof is also wider than the effective film forming width a of the substrate 6. Furthermore, in the embodiment shown in FIG. 4, the lower portions of the opposing side surfaces of the substrate holder 13 are recessed in a curved shape, and the width b of the lower portion is made wider than the effective film forming width a of the substrate 6. .
次に、上記第２図〜第４図に示された成膜室４
の断面形状を持つた装置により、ガラス基板６上
に透明導電膜として酸化錫膜を形成し、膜厚の基
板６の幅方向にわたる変化を測定し、その結果を
第６図のａ〜ｃに各々示した。この場合、基板６
の両側の成膜中に保持された部分で、霧の当たら
ないいわゆるみみの部分を除き、その間の有効成
膜幅ａ＝200mmの部分の膜厚分布を示した。なお、
原料溶液は、15％のSnCl4と200モル％のNH4Fと
５％のアルコールとの混合溶液を用い、これを毎
時１の割合で霧化し、毎分100の空気と共に
成膜用ノズル３から成膜室４に放出した。また、
基板６は、成膜室４を３分で通過するよう搬送し
た。 Next, the film forming chamber 4 shown in FIGS. 2 to 4 above is
A tin oxide film was formed as a transparent conductive film on a glass substrate 6 using a device having a cross-sectional shape of Each is shown. In this case, the substrate 6
The film thickness distribution of the effective film forming width a = 200 mm is shown in the figure, excluding the so-called slender parts that are not exposed to the mist, which are the parts held during film formation on both sides of the film. In addition,
The raw material solution is a mixed solution of 15% SnCl 4 , 200 mol% NH 4 F, and 5% alcohol, which is atomized at a rate of 1/hour and passed through the film-forming nozzle 3 with air at 100/min. was discharged into the film forming chamber 4 from there. Also,
The substrate 6 was transported so as to pass through the film forming chamber 4 in 3 minutes.
また、比較のため、第５図に示す成膜室４の断
面形状を有する従来の霧化薄膜形成装置を用い
て、上記各実施例と同じ条件で透明導電膜を形成
し、この基板６の幅方向の膜厚分布を第６図ｄに
示した。 For comparison, a transparent conductive film was formed on the substrate 6 using a conventional atomized thin film forming apparatus having the cross-sectional shape of the film forming chamber 4 shown in FIG. The film thickness distribution in the width direction is shown in FIG. 6d.
これらの結果、第２図で示された成膜室４の断
面形状を有する装置では、形成された透明導電膜
の膜厚が基板６の中央部の膜厚平均値に対して±
５％の範囲の膜厚となつたのは、基板６の有効成
膜幅の中央部約90％の部分であた。また、同じく
第３図と第４図で示された成膜室４の断面形状を
有する装置では、形成された透明導電膜の膜厚が
基板６の中央部の膜厚平均値に対して±５％の範
囲の膜厚となつたのは、何れも約85％の部分であ
た。これに対し、第５図で示された成膜室４の断
面形状を有する装置では、形成された透明導電膜
の膜厚が基板６の中央部の膜厚平均値に対して±
５％の範囲の膜厚となつたのは、僅か約70％の部
分であた。 As a result, in the apparatus having the cross-sectional shape of the film forming chamber 4 shown in FIG.
The film thickness in the range of 5% was found at about 90% of the center of the effective film forming width of the substrate 6. Further, in the apparatus having the cross-sectional shape of the film forming chamber 4 similarly shown in FIGS. In each case, about 85% of the film thickness was within the range of 5%. On the other hand, in an apparatus having the cross-sectional shape of the film forming chamber 4 shown in FIG.
Only about 70% of the film had a film thickness in the 5% range.
［発明の効果］
以上説明した通り、本発明の装置によれば、基
板６の幅方向にわたる透明導電膜の膜厚分布を均
一化することができ、これにより使用可能な透明
導電膜の割合が大きくなるため、生産性の向上を
図ることができるという優れた効果が得られる。[Effects of the Invention] As explained above, according to the apparatus of the present invention, the thickness distribution of the transparent conductive film across the width direction of the substrate 6 can be made uniform, thereby increasing the proportion of the usable transparent conductive film. Since it becomes larger, an excellent effect of improving productivity can be obtained.
第１図は、本発明の各実施例を示す霧化薄膜形
成装置の概略縦断側面図、第２図〜第４図は、成
膜部分の断面形状の各例を示す第１図のＡ−Ａ位
置での断面図、第５図は、従来の装置における成
膜部分の断面形状の例を示す第１図のＡ−Ａ位置
での断面図、第６図ａ〜ｄは、上記各装置におけ
る基板上の位置と形成された透明導電膜の膜厚と
の関係の概略を示すグラフである。
１……霧化器、３……成膜用ノズル、３ａ……
成膜用ノズルの吐出口、４……成膜室、７……均
熱板、８……ヒータ。
FIG. 1 is a schematic longitudinal sectional side view of an atomized thin film forming apparatus showing each embodiment of the present invention, and FIGS. 2 to 4 show examples of the cross-sectional shape of the film forming portion. 5 is a cross-sectional view taken along the line A-A in FIG. 1, showing an example of the cross-sectional shape of the film-forming portion in a conventional apparatus, and FIGS. 6 a to 6 d are cross-sectional views of each of the above devices 2 is a graph schematically showing the relationship between the position on the substrate and the thickness of the formed transparent conductive film. 1... Atomizer, 3... Film-forming nozzle, 3a...
Discharge port of film forming nozzle, 4... film forming chamber, 7... soaking plate, 8... heater.
Claims (1)
溶液の霧の吐出口３ａを上方に向けて開口させた
成膜用ノズル３と、同成膜用ノズル３の吐出口３
ａの上を通過するよう一方向に搬送される基板６
を天面とする成膜室４と、成膜室４にある上記基
板６をその上面から加熱する手段とからなる霧化
薄膜形成装置において、成膜室４の両側面間の幅
ｂを、基板６の有効成膜幅ａより広くしたことを
特徴とする霧化薄膜形成装置。1 An atomizer 1 that atomizes a raw material solution for a thin film, a film forming nozzle 3 whose discharge port 3a for mist of the raw material solution is opened upward, and a discharge port 3 of the film forming nozzle 3.
The substrate 6 is transported in one direction so as to pass over a.
In an atomized thin film forming apparatus consisting of a film forming chamber 4 having a top surface of An atomized thin film forming apparatus characterized in that the width is wider than the effective film forming width a of the substrate 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170491A JPH0336278A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170491A JPH0336278A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0336278A JPH0336278A (en) | 1991-02-15 |
| JPH0461076B2 true JPH0461076B2 (en) | 1992-09-29 |
Family
ID=15905949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1170491A Granted JPH0336278A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0336278A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009142187A1 (en) * | 2008-05-22 | 2009-11-26 | 株式会社カネカ | Thin film photoelectric conversion device and method for manufacturing the same |
-
1989
- 1989-06-30 JP JP1170491A patent/JPH0336278A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336278A (en) | 1991-02-15 |
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